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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Birefringent Glass‐Engraved Tilted Pillar Metasurfaces for High Power Laser Applications

Abstract Birefringent materials—which are highly needed in high power laser systems—may be limited in usage due to the laser‐induced damage threshold of traditional birefringent materials. This work reports here on all‐glass metasurfaces, fabricated by angled etching through sacrificial metal nanoparticle (NP) etching masks, for generation of effective birefringence in the formed layer. As a result, a fused silica metasurface, monolithic to the underlying substrate, is demonstrated to exhibit a birefringence of 6.57° under 375 nm illumination. Full‐wave analysis shows a good agreement with the measurement and presents potential paths forward to increasing the effective metasurface birefringence. This is the first demonstration, to the best of knowledge, of an etching technique to obtain the resulting tilted pillar‐like nanofeatures. The anisotropy of the metasurface nanoelements along the two window in‐plane major axes presents different effective paths for the two polarizations and thus generates birefringence in a nonbirefringent material. Additionally, the imparted anisotropy lends itself to manipulation of physical properties of the surface as well, with metasurface feature orientation suppressing water flow along one principal axis and giving rise to water flow steering capabilities.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Photoluminescent properties of electrochemically synthetized ZnO nanotubes

ZnO nanotubes were prepared by a sequential combination of electrochemical deposition, chemical attack and regeneration. ZnO nanocolumns were initially electrodeposited on conductive substrates and then converted into nanotubes by a process involving chemical etching and subsequent regrowth. The morphology of these ZnO nanocolumns and derived nanotubes was monitored by Scanning Electron Microscopy and their optical properties was studied by photoluminescence spectroscopy. Photoluminescence were measured as a function of temperature, from 6 to 300 K, for both nanocolumns and nanotubes. In order to study the behaviour of induced intrinsic defect all ZnO films were annealed in air at 400 °C and their photoluminescent properties were also registered before and after annealing. The behaviour of photoluminescence is explained taking into account the contribution of different point defects. A band energy diagram related to intrinsic defects was proposed to describe the behaviour of photoluminescence spectra. - Highlights: •ZnO nanotubes were obtained after etching and regrowth of electrodeposited ZnO films. •Photoluminescence spectra contain two parts involving excitonic and defects transitions. •Annealing produces a blue shift in the PL peaks in both ZnO nanocolumns and nanotubes. •Etching causes a blue shift in PL peaks due to confinement effect in nanotubes walls.

36 MATERIALS SCIENCE↗
DOE OSTI2018

An improved three-point bending test method for the investigation of nanosecond laser dicing of ultrathin Si dies with Cu stabilization layer

Highlights: • A selective chemical etching method has been developed for removal of metallization layers on ultrathin Si dies for three-point bending test. • The complex elastoplastic stress distribution in the die is simplified to an elastic stress distribution. • The die sidewall fracture strength can be determined using the standard three-point bending tensile stress equation. • The characteristic fracture strengths of ultrathin Si dies were correlated to the laser-induced microstructures of the die sidewall. - Abstract: The sidewall fracture strength of ultrathin Si dies with frontside and backside metallization layers cannot be determined directly from three-point bending (3PB) test. The complex 3PB elastoplastic stress distribution makes it difficult to determine the die sidewall fracture strength by analytical method or finite element analysis due to various theoretical and practical constraints. In this work, a selective chemical etching method has been developed for complete removal of the frontside and backside metallization layers on the ultrathin die without affecting the critical microstructure and strength of the die sidewall induced by laser dicing. By removing all the metallization layers on the die, the complex 3PB elastoplastic stress distribution is simplified to an elastic stress distribution. This enables a straightforward calculation of the die sidewall fracture strength using the standard 3PB tensile stress equation for a homogeneous linear elastic material with a rectangular cross section. Two chemical etchants were evaluated and found to be suitable but FeCl{sub 3} is preferred because of the much faster etching time. With this improved 3PB test method, the effect of nanosecond laser dicing on ultrathin Si dies with backside Cu layer was investigated. The die frontside and backside characteristic fracture strengths of ultrathin Si dies with varying backside Cu thickness were determined and correlated to TEM analyses of the compositions and microstructures at the fracture origins.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Tuning the extent of porosity and composition of N-doped carbon materials by NaNO3 and its effect on electrochemical activity

Highlights: • One-pot method using cheap NaNO{sub 3} as etching agent was developed to tune the porous structure. • NaNO{sub 3} was added into NaCl/ZnCl{sub 2} (NaCl 80 mol%) to form ionothermal salts. • The resultant carbon possesses a 3D hierarchical structure, with more mesopores ratio than micropores. • When NaNO{sub 3} amount is 5% in the salt mixture, the optimal ORR activity was obtained. - Abstract: A facile one-pot method using NaNO{sub 3} as etching agent in a molten salt medium is developed to tune the porous structure and composition of N-doped carbon materials derived from biomass at high temperatures. SEM and TEM analyses reveal that by increasing the amount of NaNO{sub 3}, the structures of the obtained carbons become more open and graphene-like layers are formed. N{sub 2} adsorption/desorption isotherms show that the hierarchical porous structure could be efficiently tuned by adjusting the amount of NaNO{sub 3} in the salt mixture. It is observed that the specific surface area of the as-prepared N-doped carbon using NaNO{sub 3} can reach 1430.1 m{sup 2} g{sup −1}, a much higher value than that of the sample prepared in the absence of NaNO{sub 3}. The micropore ratio decreases with increased amount of NaNO{sub 3}, from 49.42% to 9.98%. Whilst the surface composition of the obtained carbon materials is affected by NaNO{sub 3}. The N content increases and O decreases respectively, by increasing the amount of NaNO{sub 3}. Analysis on the N 1s high resolution reveals that the sum of pyridinic-N and graphitic-N increased, whereas the sum of pyridinic-N oxide and NO{sub x} decreases from NC-0 to NC-0.75. It is also found that the changes of the porous structure and the oxygen-containing groups from NC-0 to NC-0.75 led to changes in hydrophilicity. When the as-prepared carbon materials are used as catalysts for the oxygen reduction reaction, high catalytic activity values are obtained, sample NC-0.5 shows the best performance due to the porous structure and doping effect of N atoms. More importantly, it is concluded that producing N-doped carbon materials from soybean dregs in molten salt medium using NaNO{sub 3} as etching agent could provide a promising approach for the synthesis of opened N-doped carbons of controlled porous structures and large specific surface areas based on biomass precursors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

2D in-Plane Ordered MXene Nanosheets Derived from (Mo 2/3 Er 1/3 ) 2 AlC Rare-Earth i-MAX for Energy Storage Applications

MXenes have become one of the most versatile families of two-dimensional (2D) materials due to their high conductivity, hydrophilicity, and remarkable electrochemical performance. This has stimulated intense efforts to design and synthesize MXenes, including structurally unique in-plane ordered 2D MXenes called i-MXenes. Here, we have synthesized the quaternary rare earth (RE)-based i-MAX phase (Mo 2/3 Er 1/3 ) 2 AlC using an arc melting method, and the corresponding 2D i-MXene was then obtained through a LiF/HCl soft etching process. Literature studies have shown that Al and the RE element are etched out during the etching process, leading to the formation of pure vacancy-ordered Mo1.33C 2D i-MXene. However, our investigation reveals that upon exposure to a fluorine solution, the i-MAX phase forms RE fluoride impurities, which are challenging to remove through HCl−DI water washing and persist in the final product, resulting in impure Mo 1.33 C@Er i-MXene. These results were confirmed by various characterizations such as X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning transmission electron microscopy. Although the Mo 1.33 C@Er electrode showed a 24-fold increase in specific capacitance compared to its parent i-MAX phase, it still exhibited a high charge-transfer resistance arising from the insulating nature of RE fluoride byproducts, which adversely influence the overall capacitance behavior of the synthesized 2D Mo 1.33 C@Er i-MXenes. This study contributes to identifying pathways for the preparation of pure 2D i-MXenes from RE-based i-MAX phases and developing improved synthesis methods. With additional process optimization, the 2D i-MXene holds a strong potential for electrochemical energy storage applications. Additionally, the electronic structures of Mo 1.33 C were theoretically studied using first-principles density functional theory calculations, which revealed that pristine Mo 1.33 C is metallic, and this metallic nature is preserved even with −O, −F, and mixed functionalization.

chemical structure↗
DOE OSTI2016

Image processing analysis of nuclear track parameters for CR-39 detector irradiated by thermal neutron

CR-39 detector which covered with boric acid (H{sub 3}Bo{sub 3}) pellet was irradiated by thermal neutrons from ({sup 241}Am - {sup 9}Be) source with activity 12Ci and neutron flux 10{sup 5} n. cm{sup −2}. s{sup −1}. The irradiation times -T{sub D} for detector were 4h, 8h, 16h and 24h. Chemical etching solution for detector was sodium hydroxide NaOH, 6.25N with 45 min etching time and 60 C° temperature. Images of CR-39 detector after chemical etching were taken from digital camera which connected from optical microscope. MATLAB software version 7.0 was used to image processing. The outputs of image processing of MATLAB software were analyzed and found the following relationships: (a) The irradiation time -T{sub D} has behavior linear relationships with following nuclear track parameters: i) total track number - N{sub T} ii) maximum track number - MRD (relative to track diameter - D{sub T}) at response region range 2.5 µm to 4 µm iii) maximum track number - M{sub D} (without depending on track diameter - D{sub T}). (b) The irradiation time -T{sub D} has behavior logarithmic relationship with maximum track number - M{sub A} (without depending on track area - A{sub T}). The image processing technique principally track diameter - D{sub T} can be take into account to classification of α-particle emitters, In addition to the contribution of these technique in preparation of nano- filters and nano-membrane in nanotechnology fields.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

A method for determining average damage depth of sawn crystalline silicon wafers

The depth of surface damage (or simply, damage) in crystalline silicon wafers, caused by wire sawing of ingots, is determined by performing a series of minority carrier lifetime (MCLT) measurements. Samples are sequentially etched to remove thin layers from each surface and MCLT is measured after each etch step. The thickness-removed (δt) at which the lifetime reaches a peak value corresponds to the damage depth. This technique also allows the damage to be quantified in terms of effective surface recombination velocity (S eff ). To accomplish this, the MCLT data are converted into an S eff vs δt plot, which represents a quantitative distribution of the degree of damage within the surface layer. We describe a wafer preparation procedure to attain reproducible etching and MCLT measurement results. We also describe important characteristics of an etchant used for controllably removing thin layers from the wafer surfaces. Lastly, some typical results showing changes in the MCLT vs δt plots for different cutting parameters are given.

14 SOLAR ENERGY↗
DOE OSTI2016

In situ photoacoustic characterization for porous silicon growing: Detection principles

There are a few methodologies for monitoring the in-situ formation of Porous Silicon (PS). One of the methodologies is photoacoustic. Previous works that reported the use of photoacoustic to study the PS formation do not provide the physical explanation of the origin of the signal. In this paper, a physical explanation of the origin of the photoacoustic signal during the PS etching is provided. The incident modulated radiation and changes in the reflectance are taken as thermal sources. In this paper, a useful methodology is proposed to determine the etching rate, porosity, and refractive index of a PS film by the determination of the sample thickness, using scanning electron microscopy images. This method was developed by carrying out two different experiments using the same anodization conditions. The first experiment consisted of growth of the samples with different etching times to prove the periodicity of the photoacoustic signal, while the second one considered the growth samples using three different wavelengths that are correlated with the period of the photoacoustic signal. The last experiment showed that the period of the photoacoustic signal is proportional to the laser wavelength.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. Furthermore, this paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Restored Passivation after Complete Removal of Front Poly-Si Between the Grid in Poly-Si/SiO2 Front/Back Cells

This work explores the use of wet chemical etching to completely remove the front poly-Si layer between grid lines of a front/back poly-Si/SiO2 passivated contact device. The purpose of the work is to provide excellent passivation under the metal grid, but to also maximize Jsc by eliminating optical absorption in the front poly-Si. We show that after a high temperature anneal to distribute carriers in the poly-Si/SiO2/c-Si interface all of the poly-Si can be removed selectively with TMAH, using the SiO2 as an etch-stop layer. The etched surface can be repassivated back to its original level with the addition of a SiNx/Al2O3 stack grown on the preserved tunnelling oxide layer followed by a short forming gas anneal. Using symmetric 100 - 200 nm intrinsically doped poly-Si/SiO2 on textured n-type wafer templates we show absolute device efficiency enhancement from 15% to 21% by increasing the Jsc by 12 mA/cm2 after removing the front poly-Si and repassivating while effectively preserving the Voc, and FF of the device. IQE values are similar to PERC devices in the short wavelength range.

etching↗
DOE OSTI2022

Tin removal by an annular surface wave plasma antenna in an extreme ultraviolet lithography source

Tin contamination of the collector mirror surface remains one of the crucial issues of EUV (Extreme Ultraviolet) sources, directly impacting the availability of the tool. Hydrogen plasma-based tin removal processes employ hydrogen radicals and ions to interact with tin deposits to form gaseous tin hydride (SnH 4 ), which can be removed through pumping. An annular surface wave plasma (SWP) source developed at the University of Illinois—Urbana Champaign is integrated into the cone and perimeter of the collection mirror for in situ tin removal. The SWP is characterized by high ion and radical densities, low electron temperature, and local generation where etching is needed. This method has the potential to significantly reduce downtime and increase mirror lifetime. Radical probe measurements show hydrogen radical densities in the order of 10 19 m -3 , while Langmuir probe measurements show electron temperatures of up to 6 eV and plasma densities on the order of 10 17–18 m -3 . The generated ions are essential to the tin cleaning and have sufficiently low energy to cause no damage to the collector capping layer. Tin etch rates of up to 270 nm/min were observed in a variety of experimental conditions, including various powers, pressures, flowrates, and temperatures. In conclusion, the high etch rates demonstrated in this study exceed the expected contamination rate of the EUV source.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Effect of fabrication processes on BaTiO 3 capacitor properties

There is an increasing desire to utilize complex functional electronic materials such as ferroelectrics in next-generation microelectronics. As new materials are considered or introduced in this capacity, an understanding of how we can process these materials into those devices must be developed. Here, the effect of different fabrication processes on the ferroelectric and related properties of prototypical metal oxide (SrRuO 3 )/ferroelectric (BaTiO 3 )/metal oxide (SrRuO 3 ) heterostructures is explored. Two different types of etching processes are studied, namely, wet etching of the top SrRuO 3 using a NaIO 4 solution and dry etching using an Ar + -ion beam (i.e., ion milling). Polarization-electric-field hysteresis loops for capacitors produced using both methods are compared. For the ion-milling process, it is found that the Ar + beam can introduce defects into the SrRuO 3 /BaTiO 3 /SrRuO 3 devices and that the milling depth strongly influences the defect level and can induce a voltage imprint on the function. Realizing that such processing approaches may be necessary, work is performed to ameliorate the imprint of the hysteresis loops via ex situ “healing” of the process-induced defects by annealing the ferroelectric material in a barium-and-oxygen-rich environment via a chemical-vapor-deposition-style process. This work provides a pathway for the nanoscale fabrication of these candidate materials for next-generation memory and logic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Repair of a mirror coating on a large optic for high laser damage applications using ion milling and over-coating methods

Here, when an optical coating is damaged, deposited incorrectly, or is otherwise unsuitable, the conventional method to restore the optic often entails repolishing the optic surface, which can incur a large cost and long lead time. We propose three alternative options to repolishing, including (i) burying the unsuitable coating under another optical coating, (ii) using ion milling to etch the unsuitable coating completely from the optic surface and then recoating the optic, and (iii) using ion milling to etch through a number of unsuitable layers, leaving the rest of the coating intact, and then recoating the layers that were etched. Repairs were made on test optics with dielectric mirror coatings according to the above three options. The mirror coatings to be repaired were quarter wave stacks of HfO 2 and SiO 2 layers for high reflection at 1054 nm at 45 deg incidence in P-polarization. One of the coating layers was purposely deposited incorrectly as Hf metal instead of HfO2 to evaluate the ability of each repair method to restore the coating’s high laser-induced damage threshold (LIDT) of 64.0 J/cm 2 . The repaired coating with the highest resistance to laser-induced damage was achieved using repair method (ii) with an LIDT of 49.0 to 61.0 J/cm 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2016

Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped n{sup +}-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 μm wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl{sub 3}/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Investigation of Bearing Axial Cracking: Benchtop and Full-Scale Test Results

The most common failure mode in wind turbine gearboxes is axial cracking in intermediate and high-speed-stage bearings, also commonly called white-etching cracks (WECs). Although these types of cracks have been reported for over a decade, the conditions leading to WECs, the process by which this failure culminates, and the reasons for their apparent prevalence in wind turbine gearboxes are all highly debated. This paper summarizes the state of a multipronged research effort to examine the causes of WECs in wind turbine gearbox bearings. Recent efforts have recreated WECs on a benchtop test rig in highly loaded sliding conditions, wherein it was found that the formation of a dark etching microstructure precedes the formation of a crack, and a crack precedes the formation of white-etching microstructure. A cumulative frictional sliding energy criterion has been postulated to predict the presence of WECs. Bearing loads have also been measured and predicted in steady state and transient drivetrain operations in dynamometer testing. In addition, both loads and sliding at full scale will be measured in planned uptower drivetrain testing. If the cumulative frictional sliding energy is the dominant mechanism that causes WECs, understanding the amount of frictional sliding energy that wind turbine bearings are subjected to in typical operations is the next step in the investigation. If highly loaded sliding conditions are found uptower, similar to the examined benchtop levels, appropriate mitigation solutions can be examined, ranging from new bearing coatings and improved lubricants to changes in gearbox designs and turbine operations.

17 WIND ENERGY↗
DOE OSTI2019

Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective

In this review, we discuss the progress of emerging dry processes with atomic precision. Researchers in the field of plasma processing and surface science have addressed the increasingly challenging demands of material selectivity by utilization of synergistic enhancement of etching or deposition. The discussion encompasses major challenges in the plasma science and technology community. Here, the focus of the review is advances in atomic layer etching and area-selective deposition with activation or deactivation, especially in terms of materials scaling and variety. Control of high-aspect-ratio feature fabrication in semiconductor manufacturing and etched shapes of interior features at the nanoscale are needed. Issues related to profile distortion have received much attention. State-of-the-art techniques used in semiconductor manufacturing are reviewed and future challenges are outlined.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2011

Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies

Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.

Silicon micromachining↗
NASA NTRSDate not supplied

Black-silicon as a Wideband Infrared Absorber for the Space Instruments: Fabrication, Modeling, and Characterization

The uniform black silicon (BSI) cryogenically etched has been demonstrated as a superior absorber in par with other ultra-absorbers such as carbon nano tubes in the visible and near-infrared spectrum. In this work, we discuss the fabrication, modeling, and characterization of the BSI aiming at the 2.5-5 microns range. We investigated a series of cryogenic parameters such as temperature, pressure, oxygen flowrate, power, and etching duration and fabricated a series of uniformly etched wafers. Additionally, we established at hree-dimensional mathematical model of a unit cell and manipulated the silicon needle geometry and shape. Our preliminary fabrication results show silicon needles of 8 micron height have five orders of magnitude specular reflectance in the infrared region. The modeling efforts how longer pillar heights could be better absorbers as the wavelength increases.

Wideband absorber↗