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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Enhancing quantum memory lifetime with measurement-free local error correction and reinforcement learning

Reliable quantum computation requires systematic identification and correction of errors that occur and accumulate in quantum hardware. To diagnose and correct such errors, standard quantum error-correcting protocols utilize global error information across the system obtained by mid-circuit readout of ancillary qubits. We investigate circuit-level error-correcting protocols that are measurement-free and based on local error information. Such a local error correction (LEC) circuit consists of faulty multi-qubit gates to perform both syndrome extraction and ancilla-controlled error removal. We develop and implement a reinforcement learning framework that takes a fixed set of faulty gates as inputs and outputs an optimized LEC circuit. To evaluate this approach, we quantitatively characterize an extension of logical qubit lifetime by a noisy LEC circuit. For the two-dimensional (2D) classical Ising model and four-dimensional toric code, our optimized LEC circuit performs better at extending a memory lifetime compared with a conventional LEC circuit based on Toom's rule in a subthreshold gate error regime. We further show that such circuits can be used to reduce the rate of mid-circuit readouts to preserve a 2D toric code memory. Lastly, we discuss the application of the LEC protocol on dissipative preparation of quantum states with topological phases.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Quantifying Memory in Spin Glasses

Rejuvenation and memory, long considered the distinguishing features of spin glasses, have recently been proven to result from the growth of multiple length scales. This insight, enabled by simulations on the Janus II supercomputer, has opened the door to a quantitative analysis. We combine numerical simulations with comparable experiments to introduce two coefficients that quantify memory. A third coefficient has been recently presented by Freedberg et al. Here, we show that these coefficients are physically equivalent by studying their temperature and waiting-time dependence.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Compact Ferroelectric Programmable Majority Gate for Compute-in-Memory Applications

In this study, a compact and novel ferroelectric (FE) programmable majority gate is proposed and its novel application in Binary Neural Network (BNNs) is investigated. We demonstrate: i) by integrating N metal-ferroelectric-metal (MFM) capacitors on the gate of a transistor (1T-N-MFM structure), a nonvolatile and programmable majority (MAJ) gate that performs MAJ of AND between the gate input and polarization is realized; ii) validation the functionality of our 3-input MAJ of AND gate through comprehensive theoretical and experimental investigations; iii) a compact implementation of 3-input MAJ of XNOR gate that leverages only five of our 3-input MAJ of AND gates connected in parallel; iv) application of MAJ of XNOR gates to replace the XNOR gates and the first layer of the adder tree in the BNNs for up to 21x area saving on top of eliminating the energy-hungry memory accesses due to the compute-in-memory nature.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

On the Feasibility of 1T Ferroelectric FET Memory Array

To fully exploit the ferroelectric field effect transistor (FeFET) as compact embedded nonvolatile memory for various computing and storage applications, it is desirable to use a single FeFET (1T) as a unit cell and arrange the cells into an array. However, many write mechanisms for an 1T FeFET array reported in the literature are yet to be validated experimentally. In this work, we performed a comprehensive experimental characterization on the write operations in an 1T- NOR and 1T- AND array using n-channel bulk FeFETs. We discovered that: 1) the source/drain contact can only supply minority carriers (i.e., electrons) to the channel for polarization screening during the low- V TH state programming; 2) the body contact can not only supply majority carriers (i.e., holes) for efficient high- V TH state write, but also depletion charge for low- V TH state programming, though with lower efficiency; and 3) during the low/high- V TH programming, only the path that can supply negative/positive screening charges, respectively, need to respond, which necessitates the application of proper write biases on the corresponding terminal. Based on the understanding of these write mechanisms, we show the importance of localized body contact or column-wise body contact for the successful high- V TH state programming. We also show that the previously proposed C- AND write scheme fails to program the FeFET to the low- V TH state for our devices. Finally, we propose several write schemes for both 1T- AND and 1T- NOR arrays for various scenarios providing insights for choosing the appropriate write scheme, which will facilitate the adoption of 1T FeFET memory arrays for emerging applications.

FeFET↗
DOE OSTI2018

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.

42 ENGINEERING↗
DOE OSTI2025

Analog In-Memory Computing for the Synthetic Aperture Radar Polar Format Algorithm

As the utility of synthetic aperture radar (SAR) systems increases in autonomous vehicles, satellites, and other power- and space-constrained edge applications, there is a growing need for processors that can form SAR images at low power. In recent years, analog in-memory compute (AIMC) has shown immense promise for accelerating neural networks and other matrix-vector multiplication (MVM) heavy workloads at the edge. Here, in this work, we examine how the polar format algorithm (PFA), a popular SAR image formation algorithm, can be mapped to these AIMC systems. The PFA maps readily onto analog MVMs because it primarily consists of two linear operations: interpolation of frequency-domain data to a Cartesian grid, followed by a 2-D Fourier transform. This work presents two approaches to map the interpolation operation onto MVMs in analog hardware: a chirp transform and a modified form of sinc interpolation. These mappings introduce algorithmic errors, and their effect on the quality of SAR image formation is examined, both quantitatively and qualitatively. In addition, the impact of errors introduced by the analog hardware is explored to determine which approach is optimal under varying assumptions about the underlying analog memory devices and circuits.

Analog computing↗
DOE OSTI2019

Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes

The simulation of reversible single events in test samples of static memory microcircuits with design norms of 0.5, 0.35, 0.25, and 0.1 μm under the effect of neutron fluxes with various energies is performed. It is shown theoretically and experimentally that reversible single events can occur in modern microelectronics and nanoelectronics products under the effect of a fission-spectrum neutron flux caused by the passage of primary recoil atoms and nuclear reaction products along the microcircuit surface perpendicularly to the electric current lines in the near-drain transistor area. A series of irradiation experiments of static memory circuits with design norms of 0.35 μm is interpreted based on the proposed model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Replays of spatial memories suppress topological fluctuations in cognitive map

The spiking activity of the hippocampal place cells plays a key role in producing and sustaining an internalized representation of the ambient space—a cognitive map. These cells do not only exhibit location-specific spiking during navigation, but also may rapidly replay the navigated routs through endogenous dynamics of the hippocampal network. Physiologically, such reactivations are viewed as manifestations of “memory replays” that help to learn new information and to consolidate previously acquired memories by reinforcing synapses in the parahippocampal networks. Below we propose a computational model of these processes that allows assessing the effect of replays on acquiring a robust topological map of the environment and demonstrate that replays may play a key role in stabilizing the hippocampal representation of space.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2023

Improving the Estimation of the Atmospheric Water Vapor Pressure Using Interpretable Long Short-Term Memory Networks: Dataset, Python code, and trained models

Atmospheric water vapor pressure is an essential meteorological control on land surface and hydrologic processes. It is not as frequently observed as other meteorologic conditions, but often inferred through the August–Roche–Magnus formula by simply assuming dew point and daily minimum temperatures are equivalent or by empirically correlating the two temperatures using an aridity correction. The performance of both methods varies considerably across different regions and during different time periods; obtaining consistently accurate estimates across space and time remains a great challenge. We applied an interpretable Long Short-Term Memory (iLSTM) network conditioned on static, location specific attributes to estimate daily vapor pressure for 83 FLUXNET sites in the United States and Canada. This data package includes all raw data of the 83 FLUXNET sites, input data for model training/validation/test, trained models and results, and python codes for the manuscript "Improving the Estimation of the Atmospheric Water Vapor Pressure Using an Interpretable Long Short-term Memory Network". Specifically, it consists of five parts. - First, "1_Daymet_data_83sites.zip" includes raw data downloaded from Daymet for the 83 sites used in the paper according to their longitude and latitude, in which vapor pressure is used. It also includes a pre-processed CSV data file combining all data from the 83 sites which is specifically used for the paper. - Second, "2_Fluxnet2015_data_83sites.zip" includes raw half hourly data of the 83 sites downloaded from FLUXNET2015 data portal, pre-processed daily data of the 83 sites, a CSV file including combined pre-processed daily data of the 83 sites, and a CSV file including the information (site ID, site name, latitude, longitude, data available period) of the 83 sites. - Third, "3_MODIS_LAI_data_83sites_raw.zip" includes raw leaf area index (LAI) data downloaded from the AppEEARs data portal. - Fourth, "4_Scripts.zip" includes all scripts related to model training and post-processing of a trained model, and a jupyter notebook showing an example for model post-processing. Two typo errors in files titled "run2get_args.py" and "postprocess.py" were corrected on March 27, 2024 to avoid confusions. - Finally, "Trained_models_and_results.zip" includes three folders and three files with suffix ".npy", and each folder corresponds to one file with suffix ".npy" with the same title. Each of the three folders include all trained models associated with one iLSTM model configuration (35 models for each configuration, details are described in the paper). Each file with suffix ".npy" includes the post-processed results of the corresponding 35 models under one iLSTM model configuration.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2025

A new era of ferroelectric thin films for nonvolatile memories

Ferroelectric films have potential applications in nonvolatile memory devices. In addition to the well-established perovskite-structure oxide ferroelectrics, hafnia- and wurtzite-based ferroelectrics have recently attracted considerable attention because of the improved scalability of the ferroelectric response (down to nanometer thicknesses), their compatibility with silicon fabrication processes, and the availability of deposition methods that realize three-dimensional structures. Furthermore, due to their high compatibility with silicon processes, these are also expected to be used in emerging energy-efficient applications, such as neuromorphic computing and reservoir computing. In this article, we review the fundamentals of hafnia- and wurtzite-based ferroelectrics and their advantages and issues for developing in nonvolatile memory devices. Then, possible emerging applications are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Microstructure Anisotropy Effects on Fracture and Fatigue Mechanisms in Shape Memory Alloy Martensites

The chief scientific object was to investigate the fatigue and fracture mechanisms in NiTi shape memory alloys, in the presence of stress concentrating factors such as micro-pores and notches. In particular, the interactions between structure (factors related to the geometry of the specimen, such as holes, pores and notches) and microstructure (related to properties of the material such as grains, secondary phases, twins) in influencing the inelastic deformation, leading up to fracture in NiTi was examined. Primarily, there were two major thrusts. The first thrust focused on fracture behavior in Shape Memory Alloys where the high crystal symmetry cubic phase transformed into the low symmetry phase during deformation and propagation of cracks. This thrust revealed the interplay between size of micro-pores, size of grains and grain orientations in determining the resistance to crack growth, during cyclic tensile deformation of porous-like NiTi specimens. The role of secondary phases (impurities of Ti, often formed during fabrication) were also shown to induce local inelastic deformation gradients during tensile deformation and reduce overall extent of deformation. The second thrust focused on the fatigue and fracture behavior in the low crystal symmetry martensite phase. Unlike high symmetry phases, characterization of deformation in low symmetry phases such as martensitic NiTi has been challenging, due to a hierarchical microstructure spanning from nanoscale twins to the macroscale, a highly anisotropic microstructure stemming from the low crystal symmetry and a multitude of inelastic mechanisms for deformation. Thus, advanced X-ray techniques such as 3D high-energy diffraction microscopy and x-ray micro-Laue diffraction and spectroscopy were used in conjunction with traditional techniques such as SEM and TEM to understand the inelastic deformation in the martensite phase in NiTi, in the presence of notches. This thrust revealed a stark difference in deformation mechanisms based on the nature of stress: regions near the notch experience a highly triaxial stress while those far away experience a uniaxial stress. Additionally, while regions close to the notch were shown to deform locally by amorphization/nanocrystallization, ultimately leading to fracture, regions far away from the notch deformed in a more traditional manner, with detwinning and twin reorientation the primary mechanisms of deformation. More importantly, this thrust revealed that in the presence of structural factors such as notches, the traditional picture of reorientation (coalescence) of nanoscale martensite twins into increasingly larger domains with increased loading does not hold true, even up to fracture of the specimen. These conclusions will inform the modeling and understanding of deformation behavior of specimens, where structure and microstructure coexist and interact.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Light-Stress Influences the Composition of the Murine Gut Microbiome, Memory Function, and Plasma Metabolome

The gut microbiome plays an important role in the mammalian host and when in proper balance helps protect health and prevent disease. Host environmental stress and its influence on the gut microbiome, health and disease is an emerging area of research. Exposures to unnatural light cycles are becoming increasingly common due to travel and shift work. However, much remains unknown about how these changes influence the microbiome and host health. This information is needed to understand and predict the relationship between the microbiome and host response to altered sleep cycles. In the present study, we exposed three cohorts of mice to different light cycle regimens for 12 consecutive weeks; including continuous light, continuous dark and a standard light dark regimen consisting of 12 hours light followed by 12 hours of dark. After exposure, motor and memory behavior, and the composition of the fecal microbiome and plasma metabolome were measured. Memory potential was significantly reduced in mice exposed to continuous light, whereas rotarod performance was minimally affected. The overall structure of the microbiome was relatively constant over time. However, Bacteroidales Rikenellaceae was relatively more abundant in mice exposed to continuous dark, while Bacteroidales S24-7 was relatively more abundant in mice exposed to continuous light. Several plasma metabolites, including glucose, tryptophan, pyruvate and several unidentified metabolites, were correlated to continuous dark and light exposure conditions. Specific metabolites were correlated to the abundances of specific microorganisms based on light exposure. This study provides the foundation for future studies into the mechanisms underlying the role of the gut microbiome on the murine host during light-dark stress.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2022

Nonvolatile Memories in Spiking Neural Network Architectures: Current and Emerging Trends

A sustainable computing scenario demands more energy-efficient processors. Neuromorphic systems mimic biological functions by employing spiking neural networks for achieving brain-like efficiency, speed, adaptability, and intelligence. Current trends in neuromorphic technologies address the challenges of investigating novel materials, systems, and architectures for enabling high-integration and extreme low-power brain-inspired computing. This review collects the most recent trends in exploiting the physical properties of nonvolatile memory technologies for implementing efficient in-memory and in-device computing with spike-based neuromorphic architectures.

42 ENGINEERING↗
DOE OSTI2021

Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications

Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,2′-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, there is the potential here for low-cost molecular solid-state memory because the essential molecular thin films are easily fabricated. However, successful device fabrication does not mean a device that has a practical value. Here, we discuss the progress and challenges yet facing the fabrication of molecular multiferroic devices, which could be considered competitive to silicon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1965

Molecules and memory.

Molecules and memory, discussing role of RNA as switching element in memory processes

NEURON TRANSMISSION↗