Junction Quality of SnO 2 -Based Perovskite Solar Cells Investigated by Nanometer-Scale Electrical Potential Profiling
Electron-selective layers (ESLs) and hole-selective layers (HSLs) are critical in high-efficiency organic-inorganic lead halide perovskite (PS) solar cells for charge-carrier transport, separation, and collection. We developed a procedure to assess the quality of the ESL/PS junction by measuring potential distribution on cross-section of SnO 2 -based perovskite solar cells using Kelvin probe force microscopy. Using the potential profiling, we compared three types of cells made of different ESLs but otherwise having identical device structure: cells with PS deposited directly on bare fluorine-doped SnO 2 (FTO)-coated glass; cells with an intrinsic SnO 2 thin layer on the top of FTO as an effective ESL; and cells with the SnO2 ESL and adding a self-assembled monolayer (SAM) of fullerene. The results reveal two major potential drops or electric fields at the ESL/PS and PS/HSL interfaces. The electric-field ratio between the ESL/PS and PS/HSL interfaces increased in devices as follows: FTO < SnO 2 -ESL < SnO 2 +SAM; this sequence explains the improvements of fill factor (FF) and open-circuit voltage ( V oc ). The improvement of FF from the FTO to SnO 2 -ESL cells may result from the reduction in voltage lose at the PS/HSL back interface and the improvement of V oc from the prevention of hole recombination at the ESL/PS front interface. The further improvements with adding a SAM is caused by the defect passivation at the ESL/PS interface, and hence, improvement of the junction quality. Furthermore, these nanoelectrical findings suggest possibilities for improving the device performance by further optimizing the SnO2-based ESL material quality and the ESL/PS interface.