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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2010

Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having (001) orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relationship is observed. Cross-sectional transmission electron microscopy is used to reveal the epitaxial continuity at the gallium nitride-iron nitride interface. Surface morphology of the iron nitride, similar to yet different from that of the GaN substrate, can be described as plateau valley. The FeN chemical stoichiometry is probed using both bulk and surface sensitive methods, and the magnetic properties of the sample are revealed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Epitaxial growth of In{sub x}Ga{sub 1-x}N alloy films on sapphire and silicon by reactive co-sputtering of GaAs and indium

In{sub x}Ga{sub 1-x}N alloy films (0.2<x<0.5) were epitaxially grown on c-cut sapphire and Si (100) substrates by reactive co-sputtering of GaAs and indium with 100% nitrogen at a substrate temperature of 600 °C. X-ray diffraction studies show the formation of completely c-axis oriented, single phase alloy films over the studied range of composition. The crystallite size along the growth direction and surface morphology of alloy films, particularly those with higher indium fraction exhibit substantial improvement on Si (100) substrate, compared to the c-cut sapphire substrate. The electrical resistivity decreases monotonously with increase in indium fraction and the alloy films on Si (100) show substantially higher mobility, compared to those on sapphire. These features are attributed to superior crystallinity of alloy films on Si (100), which possibly arise from the formation of interfacial hexagonal α-Si{sub 3}N{sub 4}, owing to the interaction of nitrogen plasma with Si surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Synthesis and characterization of ferroelectric bismuth titanate (Bi{sub 4}Ti{sub 3}O{sub 12})

The Lead free, Bi{sub 4}Ti{sub 3}O{sub 12} has been synthesized by sol-gel method. The synthesized samples have been subjected to the structural, morphological, P-E hysteresis loop measurements. The X-Ray diffraction (XRD) studies have confirmed the pure phase Bismuth Titanate Bi{sub 4}Ti{sub 3}O{sub 12} with orthorhombic symmetry. The Scanning electron microscope (SEM) studies have shown the good surface morphology. The hysteresis measurement of BIT is also done to confirm the ferroelectric property of the material. The values of remnant polarization (P{sub r}) and coercive field (E{sub c}) is found to be dependent on applied electric field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites

Abstract The first experimental realization of the intrinsic (not dominated by defects) charge conduction regime in lead‐halide perovskite field‐effect transistors (FETs) is reported. The advance is enabled by: i) a new vapor‐phase epitaxy technique that results in large‐area single‐crystalline cesium lead bromide (CsPbBr 3 ) films with excellent structural and surface properties, including atomically flat surface morphology, essentially free from defects and traps at the level relevant to device operation; ii) an extensive materials analysis of these films using a variety of thin‐film and surface probes certifying the chemical and structural quality of the material; and iii) the fabrication of nearly ideal (trap‐free) FETs with characteristics superior to any reported to date. These devices allow the investigation of the intrinsic FET and (gated) Hall‐effect carrier mobilities as functions of temperature. The intrinsic mobility is found to increase on cooling from ≈30 cm 2 V −1 s −1 at room temperature to ≈250 cm 2 V −1 s −1 at 50 K, revealing a band transport limited by phonon scattering. Establishing the intrinsic (phonon‐limited) mobility provides a solid test for theoretical descriptions of carrier transport in perovskites, reveals basic limits to the technology, and points to a path for future high‐performance perovskite electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Influence of Nitrogen on Hydrogenated Amorphous Carbon Thin Films Deposited by Plasma Focus Device

To carry out our research, a plasma focus device is used to deposit thin films of nitrogen doped hydrogenated amorphous carbon (a-C:H:N) onto the stainless steel-AISI-304 substrates at room temperature. Thin films are deposited with the same numbers of focus shots, at the same distance from the anode tip and with different partial pressures of nitrogen in the mixtures of acetylene/nitrogen as working gas. The nitrogen contents of deposited films are studied using nuclear reaction analysis (NRA) techniques. The results prove that nitrogen contents of the samples do not increase significantly by increasing partial pressure of nitrogen of the working gas for both sets of the samples. Moreover, NRA results exhibit the limitation of nitrogen incorporated into the samples, when this experimental setup is used. G-peak position and peak intensity ratio of the D-band to G-band (I{sub D}/I{sub G}) are used to investigate the diamond characters. Also, they show that sp{sup 2} clustering is highly dependent on the nitrogen atomic contents and angular position of the samples. Scanning electron microscopy (SEM) shows the granular surface morphology of the films. Furthermore, it shows that angular position of the samples with respect to the anode axis plays an important role in the grain size of the surface of the samples. The thickness of the films decreases significantly by increasing angular position of the samples, while it decreases slightly by increasing partial pressure of nitrogen of the working gas. The Vickers surface hardness of the thin films exhibits significant dependency on the sp{sup 2} clustering.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Characterization of Ti-Se Conversion Coatings on Aluminum Alloy

In this work, a new type of Ti-Se conversion coating was formed on the surface of an aluminum alloy using titanium and selenide as the main salts. An examination of the surface morphology, composition and microstructure of the conversion coating was done using scanning electron microscopy, energy-dispersive spectrometry and x-ray photoelectron spectroscopy. The results showed that the surface of the conversion coating possessed a reticular structure with uniform cracks and a dense coating with a thickness of 0.4 μm. The elements in the conversion coating were C, O, Ti, Al and Se. The corrosion resistances of both the Ti-Se conversion coatings and the bare substrate were evaluated by an immersion test, polarization curves and electrochemical impedance spectroscopy. The results showed that the corrosion current of the conversion coating improved the corrosion resistance of the aluminum alloy and effectively protected the aluminum alloy in the immersion test. Furthermore, the corrosion current obtained from the polarization curves and electrochemical impedance spectroscopy decreased by one order of magnitude after the formation of the Ti-Se conversion coating, suggesting an improvement in polarization resistance.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Cost effective nanostructured copper substrates prepared with ultrafast laser pulses for explosives detection using surface enhanced Raman scattering

Ultrafast laser pulses induced surface nanostructures were fabricated on a copper (Cu) target through ablation in acetone, dichloromethane, acetonitrile, and chloroform. Surface morphological information accomplished from the field emission scanning electron microscopic data demonstrated the diversities of ablation mechanism in each case. Fabricated Cu substrates were utilized exultantly to investigate the surface plasmon (localized and propagating) mediated enhancements of different analytes using surface enhance Raman scattering (SERS) studies. Multiple utility of these substrates were efficiently demonstrated by collecting the SERS data of Rhodamine 6G molecule and two different secondary explosive molecules such as 5-amino-3-nitro-l,2,4-triazole and trinitrotoluene on different days which were weeks apart. We achieved significant enhancement factors of >10{sup 5} through an easily adoptable cleaning procedure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

In this study, the properties of thick stress-relaxed (11–22) semipolar InGaN layers were investigated. Owing to the inclination of growth orientation, misfit dislocations (MDs) occurred at the heterointerface when the strain state of the (11–22) semipolar InGaN layers reached the critical point. We found that unlike InGaN layers based on polar and nonpolar growth orientations, the surface morphologies of the stress-relaxed (11–22) semipolar InGaN layers did not differ from each other and were similar to the morphology of the underlying GaN layer. In addition, misfit strain across the whole InGaN layer was gradually relaxed by MD formation at the heterointerface. To minimize the effect of surface roughness and defects in GaN layers on the InGaN layer, we conducted further investigation on a thick (11–22) semipolar InGaN layer grown on an epitaxial lateral overgrown GaN template. We found that the lateral indium composition across the whole stress-relaxed InGaN layer was almost uniform. Therefore, thick stress-relaxed (11–22) semipolar InGaN layers are suitable candidates for use as underlying layers in long-wavelength devices, as they can be used to control strain accumulation in the heterostructure active region without additional influence of surface roughness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Electrical characterization of MIM capacitor comprises an adamantane film at room temperature

We fabricated a new metal-insulator-metal capacitor at room temperature, comprising a ∼90 nm thin low–k adamantane film on a Si substrate. The surface morphology of deposited organic film was investigated by using scanning electron microscopy and Raman spectroscopy, which is confirmed that the adamantane thin film was uniformly distributed on the Si surface. The adamantane film exhibits a low leakage current density of 7.4 x 10{sup −7} A/cm{sup 2} at 13.5 V, better capacitance density of 2.14 fF/μm{sup 2} at 100 KHz.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

XPS analysis of molecular contamination and sp 2 amorphous carbon on oxidized (100) diamond

The efficacy of oxygen (O) surface terminations on diamond is an important factor for the performance and stability for diamond-based quantum sensors and electronics. Given the wide breadth of O-termination techniques, it can be difficult to discern which method would yield the highest and most consistent O coverage. Furthermore, the interpretation of surface characterization techniques is complicated by surface morphology and purity, which if not accounted for will yield inconsistent determination of the oxygen coverage. We present a comprehensive approach to consistently prepare and analyze oxygen termination of surfaces on (100) single-crystalline diamond. We report on x-ray photoelectron spectroscopy (XPS) characterization of diamond surfaces treated with six oxidation methods that include various wet chemical oxidation techniques, photochemical oxidation with UV illumination, and steam oxidation using atomic layer deposition (ALD). Our analysis entails a rigorous XPS peak-fitting procedure for measuring the functionalization of O-terminated diamond. The findings herein have provided molecular-level insights on oxidized surfaces in (100) diamond, including the demonstration of clear correlation between the measured oxygen atomic percentage and the presence of molecular contaminants containing nitrogen, silicon, and sulfur. We also provide a comparison of the sp 2 carbon content with the O1s atomic percentage and discern a correlation with the diamond samples treated with dry oxidation which eventually tapers off at a max O1s atomic percentage value of 7.09 ± 0.40%. Given these results, we conclude that the dry oxidation methods yield some of the highest oxygen amounts, with the ALD water vapor technique proving to be the cleanest technique out of all the oxidation methods explored in this work.

XPS↗
DOE OSTI2012

White light interferometry for quantitative surface characterization in ion sputtering experiments.

White light interferometry (WLI) can be used to obtain surface morphology information on dimensional scale of millimeters with lateral resolution as good as {approx}1 {micro}m and depth resolution down to 1 nm. By performing true three-dimensional imaging of sample surfaces, the WLI technique enables accurate quantitative characterization of the geometry of surface features and compares favorably to scanning electron and atomic force microscopies by avoiding some of their drawbacks. In this paper, results of using the WLI imaging technique to characterize the products of ion sputtering experiments are reported. With a few figures, several example applications of the WLI method are illustrated when used for (i) sputtering yield measurements and time-to-depth conversion, (ii) optimizing ion beam current density profiles, the shapes of sputtered craters, and multiple ion beam superposition and (iii) quantitative characterization of surfaces processed with ions. In particular, for sputter depth profiling experiments of {sup 25}Mg, {sup 44}Ca and {sup 53}Cr ion implants in Si (implantation energy of 1 keV per nucleon), the depth calibration of the measured depth profile curves determined by the WLI method appeared to be self-consistent with TRIM simulations for such projectile-matrix systems. In addition, high depth resolution of the WLI method is demonstrated for a case of a Genesis solar wind Si collector surface processed by gas cluster ion beam: a 12.5 nm layer was removed from the processed surface, while the transition length between the processed and untreated areas was 150 {micro}m.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2016

Experimental studies of Micro- and Nano-grained UO 2 : Grain Growth Behavior, Sufrace Morphology, and Fracture Toughness

This activity is supported by the US Nuclear Energy Advanced Modeling and Simulation (NEAMS) Fuels Product Line (FPL) and aims at providing experimental data for the validation of the mesoscale simulation code MARMOT. MARMOT is a mesoscale multiphysics code that predicts the coevolution of microstructure and properties within reactor fuel during its lifetime in the reactor. It is an important component of the Moose-Bison-Marmot (MBM) code suite that has been developed by Idaho National Laboratory (INL) to enable next generation fuel performance modeling capability as part of the NEAMS Program FPL. In order to ensure the accuracy of the microstructure-based materials models being developed within the MARMOT code, extensive validation efforts must be carried out. In this report, we summarize the experimental efforts in FY16 including the following important experiments: (1) in-situ grain growth measurement of nano-grained UO 2 ; (2) investigation of surface morphology in micrograined UO 2 ; (3) Nano-indentation experiments on nano- and micro-grained UO 2 . The highlight of this year is: we have successfully demonstrated our capability to in-situ measure grain size development while maintaining the stoichiometry of nano-grained UO 2 materials; the experiment is, for the first time, using synchrotron X-ray diffraction to in-situ measure grain growth behavior of UO 2 .

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2016

Bio-composites fabricated by sandwiching sisal fibers with polypropylene (PP)

Sisal fibers reinforced polypropylene (PP) composites were successfully fabricated using sandwiching sisal fibers with PP sheets. The ratio of fiber and polymer matrix was 50:50 (wt. %). Untreated short and long sisal fibers, and alkali treated short sisal fibers in 6% NaOH at 100°C for 1 and 3 h were used as reinforcement or fillers. A small amount (3 wt. %) of maleic anhydride grafted polypropylene (MAPP) was added as a coupling agent. Scanning electron microscopy (SEM) and Fourier transform infrared (FTIR) spectroscopy were used to characterize the surface morphology and chemical composition of the fibers, respectively. Flexural test of sisal/PP composites was done according to ASTM D 790-02. The results showed that flexural strength of untreated long fiber reinforced composite is much higher than that of the untreated and alkali treated short fibers reinforced composites with and without the addition of MAPP. Alkalization related to fiber surface modification, fiber length/fiber orientation and a composite fabrication technique are important factors in contributing to the fiber distribution within the matrix, the bonding between the fiber and the matrix and the enhancement of flexural strength of the bio-composite.

36 MATERIALS SCIENCE↗
DOE OSTI2016

A study on different morphological structures of zinc oxide nanostructures for humidity sensing application

Effects of different morphological structures of ZnO to the performance of the device in the humidity sensing have been studied. Two different kinds of nanostructures were obtained which are nanords and nanoflakes. From the surface morphology image, the ZnO nanoflakes has lower diameter size of 100 nm compared to ZnO nanorods of 250 nm. The ZnO nanoflakes are not aligned and has low porous structure compared to ZnO nanorods. The humidity sensor performance of ZnO nanorods has superior performance compared to ZnO nanoflakes. The sensitivity of the ZnO nanorods sensor is 3.20 which are almost two times higher than the ZnO nanoflakes of 1.65. The structural properties of the samples have been characterized using field emission scanning electron microscopy (FESEM) electrical properties has been characterized using current voltage (I-V) measurement.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2010

Metamorphic quantum dots: Quite different nanostructures

In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantum dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Fabrication of surface textures by ion implantation for antireflection of silicon crystals

We report on a method based on ion implantation and thermal annealing to fabricate silicon surface textures for antireflection purposes. Modification to crystalline Si surfaces by hydrogen ion implantation is a well known phenomenon, but the surface structures generated by H implantation alone, typically of a low packing density and small aspect ratio, are not effective in suppressing light reflection from Si. We show that coimplantation of hydrogen and argon, combined with thermal annealing and oxidation, can result in an interesting surface morphology in Si crystals, yielding the lowest light reflectance of {approx}1% over a broad spectral range at various light incident angles. In addition, lattice damage to crystalline Si generated by ion implantation is reduced or completely removed by the annealing processes. Possible mechanisms for the formation of such observed surface textures are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Tribological Properties of Surface-Textured and Plasma-Nitrided Pure Titanium Under Oil Lubrication Condition

Plasma nitriding was conducted as post-treatment for surface texture on pure titanium to obtain a continuous nitriding layer. Supersonic fine particles bombarding (SFPB) was carried out to prepare surface texture. The surface morphologies and chemical composition were analyzed using scanning electron microscope and energy disperse spectroscopy. The microstructures of modified layers were characterized by transmission electron microscope. The tribological properties of surface-textured and duplex-treated pure titanium under oil lubrication condition were systematically investigated in the ball-on-plate reciprocating mode. The effects of applied load and sliding velocity on the tribological behavior were analyzed. The results show that after duplex treatments, the grains size in modified layer becomes slightly larger, and hardness is obviously improved. Wear resistance of duplex-treated pure titanium is significantly improved referenced to untreated and surface-textured pure titanium, which is 3.22 times as much as untreated pure titanium and 2.15 times of that for surface-textured pure titanium, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Multiscale geometric modeling of macromolecules I: Cartesian representation

This paper focuses on the geometric modeling and computational algorithm development of biomolecular structures from two data sources: Protein Data Bank (PDB) and Electron Microscopy Data Bank (EMDB) in the Eulerian (or Cartesian) representation. Molecular surface (MS) contains non-smooth geometric singularities, such as cusps, tips and self-intersecting facets, which often lead to computational instabilities in molecular simulations, and violate the physical principle of surface free energy minimization. Variational multiscale surface definitions are proposed based on geometric flows and solvation analysis of biomolecular systems. Our approach leads to geometric and potential driven Laplace–Beltrami flows for biomolecular surface evolution and formation. The resulting surfaces are free of geometric singularities and minimize the total free energy of the biomolecular system. High order partial differential equation (PDE)-based nonlinear filters are employed for EMDB data processing. We show the efficacy of this approach in feature-preserving noise reduction. After the construction of protein multiresolution surfaces, we explore the analysis and characterization of surface morphology by using a variety of curvature definitions. Apart from the classical Gaussian curvature and mean curvature, maximum curvature, minimum curvature, shape index, and curvedness are also applied to macromolecular surface analysis for the first time. Our curvature analysis is uniquely coupled to the analysis of electrostatic surface potential, which is a by-product of our variational multiscale solvation models. As an expository investigation, we particularly emphasize the numerical algorithms and computational protocols for practical applications of the above multiscale geometric models. Such information may otherwise be scattered over the vast literature on this topic. Based on the curvature and electrostatic analysis from our multiresolution surfaces, we introduce a new concept, the polarized curvature, for the prediction of protein binding sites.

97 MATHEMATICS AND COMPUTING↗