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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

Trap states in Al{sub 0.55}Ga{sub 0.45}N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al{sub 2}O{sub 3}/Al{sub 0.55}Ga{sub 0.45}N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10{sup 13} eV{sup −1}·cm{sup −2}. Al{sub 2}O{sub 3} gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Cleaning of optical surfaces by capacitively coupled RF discharge plasma

In this paper, we report cleaning of carbon capped molybdenum (Mo) thin film by in-house developed radio frequency (RF) plasma reactor, at different powers and exposure time. Carbon capped Mo films were exposed to oxygen plasma for different durations at three different power settings, at a constant pressure. After each exposure, the thickness of the carbon layer and the roughness of the film were determined by hard x-ray reflectivity measurements. It was observed that most of the carbon film got removed in first 15 minutes exposure. A high density layer formed on top of the Mo film was also observed and it was noted that this layer cannot be removed by successive exposures at different powers. A significant improvement in interface roughness with a slight improvement in top film roughness was observed. The surface roughness of the exposed and unexposed samples was also confirmed by atomic force microscopy measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Development of a microwave capacitive method for the spectroscopy of the complex permittivity

We describe a vector network analyzer-based method to study the electromagnetic properties of nanoscale dielectrics at microwave frequencies (1 MHz–40 GHz). The complex permittivity spectrum of a given dielectric can be determined by placing it in a capacitor accessed on its both electrodes by coplanar waveguides. However, inherent propagation delays along the signal paths together with frequency-dependent effective surface of the capacitor at microwave frequencies can lead to significant distortion in the measured permittivity, which in turn can give rise to artificial frequency variations of the complex permittivity. We detail a fully analytical rigorous correction sequence with neither recourse to extrinsic loss mechanisms nor to arbitrary parasitic signal paths. We illustrate our method on 3 emblematic dielectrics: ferroelectric morphotropic lead zirconate titanate, its paraelectric pyrochlore counterpart, and strontium titanate. Permittivity spectra taken at various points along the hysteresis loop help shedding light onto the nature of the different dielectric energy loss mechanisms. Thanks to the analytical character of our method, we can discuss routes to extend it to higher frequencies and we can identify unambiguously the sources of potential artifacts.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber

Low-temperature plasma technique is one of the critical techniques in IC manufacturing process, such as etching and thin-film deposition, and the uniformity greatly impacts the process quality, so the design for the plasma uniformity control is very important but difficult. It is hard to finely and flexibly regulate the spatial distribution of the plasma in the chamber via controlling the discharge parameters or modifying the structure in zero-dimensional space, and it just can adjust the overall level of the process factors. In the view of this problem, a segmented non-uniform dielectric module design solution is proposed for the regulation of the plasma profile in a CCP chamber. The solution achieves refined and flexible regulation of the plasma profile in the radial direction via configuring the relative permittivity and the width of each segment. In order to solve this design problem, a novel simulation-based auto-design approach is proposed, which can automatically design the positional sequence with multi independent variables to make the output target profile in the parameterized simulation model approximate the one that users preset. This approach employs an idea of quasi-closed-loop control system, and works in an iterative mode. It starts from initial values of the design variable sequences, and predicts better sequences via the feedback of the profile error between the output target profile and the expected one. It never stops until the profile error is narrowed in the preset tolerance.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Low-temperature capacitive sensor based on perovskite oxides

Energy, environmental and social issues drive towards the green political economy and the development of advanced technologies, promoting renewable energy sources, improving energy conversion efficiency and reducing exhaust gas emissions. The development of sustainable technologies requires strategic research in the area of gas sensors for monitoring air quality, controlling gas emissions and optimizing combustion processes. Solid state sensors are the most attractive one because of their simplicity in function, small size and low cost. The aim of this work is to synthetize and characterize strontium titanate and test its sensing performance. The prepared sensor device shows significant sensitivity and response rate at room-temperature. However, because of the low recovery rate, the regeneration of the sensor has to be made at high temperature for promoting the decomposition of the carbonates formed on the perovkite surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Capacitive coupling in hybrid graphene/GaAs nanostructures

Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the surface of the heterostructure and therefore allows tuning the electronic density of the 2DEG. Conversely, the 2DEG potential can tune the graphene Fermi energy. Graphene-defined quantum point contacts in the 2DEG show half-plateaus of quantized conductance in finite bias spectroscopy and display the 0.7 anomaly for a large range of densities in the constriction, testifying to their good electronic properties. Finally, we demonstrate that the GaAs nanostructure can detect charges in the vicinity of the heterostructure's surface. This confirms the strong coupling of the hybrid device: localized states in the graphene ribbon could, in principle, be probed by the underlying confined channel. The present hybrid graphene/GaAs nanostructures are promising for the investigation of strong interactions and coherent coupling between the two fundamentally different materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Electron heating mode transition induced by mixing radio frequency and ultrahigh frequency dual frequency powers in capacitive discharges

Electron heating mode transitions induced by mixing the low- and high-frequency power in dual-frequency nitrogen discharges at 400 mTorr pressure are presented. As the low-frequency (13.56 MHz) power decreases and high-frequency (320 MHz) power increases for the fixed power of 200 W, there is a transition of electron energy distribution function (EEDF) from Druyvesteyn to bi-Maxwellian type characterized by a distinguished warm electron population. It is shown that this EEDF evolution is attributed to the transition from collisional to collisionless stochastic heating of the low-energy electrons.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Publisher's Note: “Differential voltage amplification from ferroelectric negative capacitance” [Appl. Phys. Lett. 111, 253501 (2017)]

This article was originally published online on 18 December 2017. Due to a production error, the initially-published version contained several typographical errors not corrected during proof revisions, none of which affected the substance of the article. AIP Publishing apologizes for this error. All online versions of the article were corrected on 21 December 2017, and it now appears correctly in print.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2020

Similarity of capacitive radio-frequency discharges in nonlocal regimes

Similarity transformations are essential for correlating discharges at different scales, which are mostly utilized with local field or local energy approximations. In this work, we report the fully kinetic results from particle-in-cell/Monte Carlo collision simulations that unambiguously demonstrate the similarity of radio frequency (rf) discharges in nonlocal regimes where the electron energy relaxation length is much larger than the gap dimension. It is found that at a constant rf voltage amplitude, discharges will be similar if the gas pressure, inverse of gap distance, and rf driving frequency are all changed by the same scaling factor. The scaling relations of fundamental parameters are illustrated for rf discharges in the alpha-mode with secondary electron emission ignored, and the temporal electron kinetics are shown to have invariance in similar discharges. The results explicitly validate the scaling laws in nonlocal kinetic regimes, indicating promising application potentials of the similarity transformations across a wide range of kinetic regimes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗