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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Observation of room temperature optical absorption in InP/GaAs type-II ultrathin quantum wells and quantum dots

Room temperature optical absorption process is observed in ultrathin quantum wells (QWs) and quantum dots (QDs) of InP/GaAs type-II band alignment system using surface photovoltage spectroscopy technique, where no measurable photoluminescence signal is available. Clear signature of absorption edge in the sub band gap region of GaAs barrier layer is observed for the ultrathin QWs and QDs, which red shifts with the amount of deposited InP material. Movement of photogenerated holes towards the sample surface is proposed to be the main mechanism for the generation of surface photovoltage in type-II ultrathin QWs and QDs. QDs of smaller size are found to be free from the dislocations as confirmed by the high resolution transmission electron microscopy images.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electron spin relaxation time in (110) InGaAs/InAlAs quantum wells

Electron spin relaxation time τ{sub s} in InGaAs/InAlAs quantum wells (QWs) grown on (110) and (100) InP substrates was investigated by pump-probe transmission measurements. Similar τ{sub s} of 0.83–1.0 ns were measured at room temperature for all the measured (110) and (100) QWs, indicating suppression of the D'yakonov-Perel' spin relaxation mechanism in (110) QWs is not effective in InGaAs/InAlAs QWs as opposed to GaAs/AlGaAs QWs. Contribution of the Bir-Aronov-Pikus mechanism dominant in (110) GaAs/AlGaAs QWs was found to be small in both the (110) and (100) InGaAs/InAlAs QWs from the weak dependences of τ{sub s} on pump intensity at room temperature. These results suggest that the spin relaxation mechanism dominant in InGaAs/InAlAs QWs at a temperature higher than 200 K is the Elliott-Yafet mechanism independent of the crystal orientation among the above three major mechanisms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Single photon emission at 1.55 μm from charged and neutral exciton confined in a single quantum dash

We investigate charged and neutral exciton complexes confined in a single self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 μm. The emission characteristics have been probed by measuring high-spatial-resolution polarization-resolved photoluminescence and cross-correlations of photon emission statistics at T = 5 K. The photon auto-correlation histogram of the emission from both the neutral and charged exciton indicates a clear antibunching dip with as-measured g{sup (2)}(0) values of 0.18 and 0.31, respectively. It proves that these exciton complexes confined in single quantum dashes of InP-based material system can act as true single photon emitters being compatible with standard long-distance fiber communication technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Can p-channel tunnel field-effect transistors perform as good as n-channel?

We show that bulk semiconductor materials do not allow perfectly complementary p- and n-channel tunnel field-effect transistors (TFETs), due to the presence of a heavy-hole band. When tunneling in p-TFETs is oriented towards the gate-dielectric, field-induced quantum confinement results in a highest-energy subband which is heavy-hole like. In direct-bandgap IIIV materials, the most promising TFET materials, phonon-assisted tunneling to this subband degrades the subthreshold swing and leads to at least 10× smaller on-current than the desired ballistic on-current. This is demonstrated with quantum-mechanical predictions for p-TFETs with tunneling orthogonal to the gate, made out of InP, In{sub 0.53}Ga{sub 0.47}As, InAs, and a modified version of In{sub 0.53}Ga{sub 0.47}As with an artificially increased conduction-band density-of-states. We further show that even if the phonon-assisted current would be negligible, the build-up of a heavy-hole-based inversion layer prevents efficient ballistic tunneling, especially at low supply voltages. For p-TFET, a strongly confined n-i-p or n-p-i-p configuration is therefore recommended, as well as a tensily strained line-tunneling configuration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors

Heterogeneous integration of III-V devices on Si wafers have been explored for realizing high device performance as well as merging electrical and photonic applications on the Si platform. Existing methodologies have unavoidable drawbacks such as inferior device quality or high cost in comparison with the current Si-based technology. In this paper, we present InGaAs-on-insulator (-OI) fabrication from an InGaAs layer grown on a Si donor wafer with a III-V buffer layer instead of growth on a InP donor wafer. This technology allows us to yield large wafer size scalability of III-V-OI layers up to the Si wafer size of 300 mm with a high film quality and low cost. The high film quality has been confirmed by Raman and photoluminescence spectra. In addition, the fabricated InGaAs-OI transistors exhibit the high electron mobility of 1700 cm{sup 2}/V s and uniform distribution of the leakage current, indicating high layer quality with low defect density.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

50% continuous-wave wallplug efficiency from 1.53μm-emitting broad-area diode lasers

Long-wavelength InP-based diode lasers emitting at 1.53 μm have been optimized for maximum continuous-wave (CW) electrical-to-optical power conversion efficiency, so-called wallplug efficiency (WPE). Efficient electron and hole capture into a single-quantum-well (SQW) active region as well as suppression of electron and hole leakage out of the SQW result in high values for the internal differential efficiency: ∼97% for long-cavity (≥2 mm) uncoated-facet devices and ∼85%–89% for short-cavity (1.5 mm) optimized facet-coated devices. The characteristic temperature of the slope efficiency, T{sub 1}, reaches a high value of 323 K. Doping-level optimization of the p-cladding layer and the use of the SQW result in low values for the internal loss coefficient: ∼1.1 cm{sup −1} for long-cavity (≥2 mm) uncoated-facet devices and ∼1.5–2.0 cm{sup −1} for short-cavity (1.5 mm) optimized facet-coated devices. In turn, a maximum CW WPE value of 50% is achieved at room temperature and ∼1 W output power from conductively-cooled 100 μm-wide-aperture devices. The maximum CW power is 2.5 W. One beneficial byproduct of the CW-WPE maximization process is a large transverse spot size which, in turn, provides a very narrow transverse beamwidth: 26° full width half maximum. Reliability tests show no degradation when devices are run CW at high currents (4–5 A) and high temperatures (40–50 °C) for over 4000 h, at ∼2 W output power.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap

Strain-based band engineering in quantum dots and dashes has been predominantly limited to compressively strained systems. However, tensile strain strongly reduces the bandgaps of nanostructures, enabling nanostructures to emit light at lower energies than they could under compressive strain. We demonstrate the self-assembled growth of dislocation-free GaAs quantum dashes on an InP(111)B substrate, using a 3.8% tensile lattice-mismatch. Due to the high tensile strain, the GaAs quantum dashes luminesce at 110–240 meV below the bandgap of bulk GaAs. The emission energy is readily tuned by adjusting the size of the quantum dashes via deposition thickness. Tensile self-assembly creates new opportunities for engineering the band alignment, band structure, and optical properties of epitaxial nanostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Nonlinear switching dynamics in a photonic-crystal nanocavity

We report the experimental observation of nonlinear switching dynamics in an InP photonic crystal nanocavity. Usually, the regime of relatively small cavity perturbations is explored, where the signal transmitted through the cavity follows the temporal variation of the cavity resonance. When the cavity is perturbed by strong pulses, we observe several nonlinear effects, i.e., saturation of the switching contrast, broadening of the switching window, and even initial reduction of the transmission. The effects are analyzed by comparison with nonlinear coupled mode theory and explained in terms of large dynamical variations of the cavity resonance in combination with nonlinear losses. The results provide insight into the nonlinear optical processes that govern the dynamics of nanocavities and are important for applications in optical signal processing, where one wants to optimize the switching contrast.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method, is proposed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Comparative analysis of quantum cascade laser modeling based on density matrices and non-equilibrium Green's functions

We study the operation of an 8.5 μm quantum cascade laser based on GaInAs/AlInAs lattice matched to InP using three different simulation models based on density matrix (DM) and non-equilibrium Green's function (NEGF) formulations. The latter advanced scheme serves as a validation for the simpler DM schemes and, at the same time, provides additional insight, such as the temperatures of the sub-band carrier distributions. We find that for the particular quantum cascade laser studied here, the behavior is well described by simple quantum mechanical estimates based on Fermi's golden rule. As a consequence, the DM model, which includes second order currents, agrees well with the NEGF results. Both these simulations are in accordance with previously reported data and a second regrown device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

Self-assembled dilute nitride InNP quantum dots (QDs) in GaP matrix grown under the Stranski-Krastanov mode by gas-source molecular beam epitaxy are studied. The N-related localized states inside the InNP QDs provide a spatially direct recombination channel, in contrast to the spatially indirect channel through the strained In(N)P QDs/GaP interface states. The N incorporation into InP QDs therefore causes a blueshift and double-peak features in photoluminescence, which are not observed in other dilute nitride materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ultrafast terahertz Faraday rotation in graphene

Terahertz (THz) Faraday rotation measurements were performed to investigate carrier dynamics in p-type Chemical vapor deposition (CVD) graphene. We used static and time-resolved polarization-sensitive THz transmission measurements in a magnetic field to probe free carriers in GaAs, InP, and Graphene. Static measurements probe the equilibrium carrier density and momentum scattering rate. Time-resolved (optical pump/THz probe) measurements probe the change in these quantities following photoexcitation. In a typical CVD graphene sample, we found that 0.5 ps following photoexcitation with 1 × 10{sup 13} photons/cm{sup 2} pulses at 800 nm the effective hole scattering time decreased from 37 fs to 34.5 fs, while the carrier concentration increased from 2.0 × 10{sup 12} cm{sup −2} to 2.04 × 10{sup 12} cm{sup −2}, leading to a transient decrease in the conductivity of the film.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic

Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In{sub 0.53}Ga{sub 0.47}As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

An electrically injected rolled-up semiconductor tube laser

We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

1.55-μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range

Passive mode-locking of two-section quantum-dot mode-locked lasers grown by metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide tuning range of 300 MHz around the fundamental mode-locking frequency of 33.48 GHz. The frequency tuning is achieved by varying the reverse bias of the saturable absorber from 0 to −2.2 V and the gain section current from 90 to 280 mA. 3 dB optical spectra width of 6–7 nm leads to ex-facet optical pulses with full-width half-maximum down to 3.7 ps. Single-section quantum-dot mode-locked lasers show 0.8 ps broad optical pulses after external fiber-based compression. Injection current tuning from 70 to 300 mA leads to 30 MHz frequency tuning.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Band gap engineering via doping: A predictive approach

We employ an extension of Harrison's theory at the tight binding level of approximation to develop a predictive approach for band gap engineering involving isovalent doping of wide band gap semiconductors. Our results indicate that reasonably accurate predictions can be achieved at qualitative as well as quantitative levels. The predictive results were checked against ab initio ones obtained at the level of DFT/SGGA + U approximation. The minor disagreements between predicted and ab initio results can be attributed to the electronic processes not incorporated in Harrison's theory. These include processes such as the conduction band anticrossing [Shan et al., Phys. Rev. Lett. 82, 1221 (1999); Walukiewicz et al., Phys. Rev. Lett. 85, 1552 (2000)] and valence band anticrossing [Alberi et al., Phys. Rev. B 77, 073202 (2008); Appl. Phys. Lett. 92, 162105 (2008); Appl. Phys. Lett. 91, 051909 (2007); Phys. Rev. B 75, 045203 (2007)], as well as the multiorbital rehybridization. Another cause of disagreement between the results of our predictive approach and the ab initio ones is shown to be the result of the shift of Fermi energy within the impurity band formed at the edge of the valence band maximum due to rehybridization. The validity of our approach is demonstrated with example applications for the systems GaN{sub 1−x}Sb{sub x}, GaP{sub 1−x}Sb{sub x}, AlSb{sub 1−x}P{sub x}, AlP{sub 1−x}Sb{sub x}, and InP{sub 1−x}Sb{sub x}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗