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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Stable Adaptive Inertial Control of a Doubly-Fed Induction Generator

This paper proposes a stable adaptive inertial control scheme of a doubly-fed induction generator. The proposed power reference is defined in two sections: the deceleration period and the acceleration period. The power reference in the deceleration period consists of a constant and the reference for maximum power point tracking (MPPT) operation. The latter contributes to preventing a second frequency dip (SFD) in this period because its reduction rate is large at the early stage of an event but quickly decreases with time. To improve the frequency nadir (FN), the constant value is set to be proportional to the rotor speed prior to an event. The reference ensures that the rotor speed converges to a stable operating region. To accelerate the rotor speed while causing a small SFD, when the rotor speed converges, the power reference is reduced by a small amount and maintained until it meets the MPPT reference. The results show that the scheme causes a small SFD while improving the FN and the rate of change of frequency in any wind conditions, even in a grid that has a high penetration of wind power.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2016

Dynamic Droop–Based Inertial Control of a Doubly-Fed Induction Generator

If a large disturbance occurs in a power grid, two auxiliary loops for the inertial control of a wind turbine generator have been used: droop loop and rate of change of frequency (ROCOF) loop. Because their gains are fixed, difficulties arise in determining them suitable for all grid and wind conditions. This paper proposes a dynamic droop-based inertial control scheme of a doubly-fed induction generator (DFIG). The scheme aims to improve the frequency nadir (FN) and ensure stable operation of a DFIG. To achieve the first goal, the scheme uses a droop loop, but it dynamically changes its gain based on the ROCOF to release a large amount of kinetic energy during the initial stage of a disturbance. To do this, a shaping function that relates the droop to the ROCOF is used. To achieve the second goal, different shaping functions, which depend on rotor speeds, are used to give a large contribution in high wind conditions and prevent over-deceleration in low wind conditions during inertial control. The performance of the proposed scheme was investigated under various wind conditions using an EMTP-RV simulator. The results indicate that the scheme improves the FN and ensures stable operation of a DFIG.

17 WIND ENERGY↗
DOE OSTI2023

Self-Resonant Coil Design for High-frequency High-Power Inductive Wireless Power Transfer

In this paper, the design methodology of a high-frequency, high-power, long-distance inductive wireless power transfer (WPT) is presented. The airgap (d) of a traditional high-power (>1 kW) WPT is limited to a few hundred millimeters, which is almost 1/4th of the coil diameter, D; d ≤ D/4. In this paper, the power transfer distance is significantly increased (d ≥ 1.5D) by adopting a high-frequency magnetic design and GaN-based power electronics. The material and design of the coil and shield are investigated using FEA and tested experimentally. A high frequency 6.78 MHz wireless charging system was built to transfer 1 kW power over 3 m airgap.

Mohammad, Mostak↗
DOE OSTI2022

Cold acclimation threshold induction temperatures of switchgrass ecotypes grown under a long and short photoperiod

Abstract Plants can cold acclimate to enhance their freezing tolerance by sensing declining temperature and photoperiod cues. However, the factors influencing genotypic variation in the induction of cold acclimation are poorly understood among perennial grasses. We hypothesized that the more northern upland switchgrass ( Panicum virgatum L.) ecotype develops a higher degree of freezing tolerance by initiating cold acclimation at higher temperatures as compared with the coastal and southern lowland ecotypes. First, we determined the optimal method for assessing freezing tolerance and the length of exposure to 8/4°C required to induce the maximum level of freezing tolerance in the most northern upland and most southern lowland genotypes. We characterized the maximum freezing tolerance of eight uplands, three coastal and five lowland genotypes grown for 21 days at 8/4°C and a 10 or 16 h photoperiod. Next, we identified the temperature required to induce cold acclimation by exposing the 16 genotypes for 7 days at 20–6°C constant temperatures under a 10 or 16 h photoperiod. Cold acclimation initiated at temperatures 5 and 7°C higher in upland than in coastal and lowland genotypes. Among upland genotypes the shorter photoperiod induced cold acclimation at a 1°C higher temperature. Genotypes originating from a more northern latitude initiate cold acclimation at higher temperatures and develop higher maximum freezing tolerances. An earlier response to declining temperatures may provide the upland ecotype with additional time to prepare for winter and provide an advantage when plants are subjected to the rapid changes in fall temperature associated with injurious frosts.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2013

Investigation of processing advanced waste forms in Cold Crucible Induction Melter systems

The Cold Crucible Induction Melter (CCIM) technology has been identified in several independent reviews and studies as a potential alternative or supplemental vitrification technology for specific U.S. Department of Energy (DOE) high level radioactive waste (HLW) streams. These inventories have unique chemistries, such as high alumina, high iron, high chromium, etc., that are not amenable to efficient immobilization in conventional borosilicate glass (BSG) matrices. Advanced waste forms, such as iron phosphate glass (FePG), high crystalline BSG (HC-BSG), and alumino-silicate glass-ceramic (GC) have been shown to provide significantly improved immobilization matrices for these challenging waste streams, including dramatically improved waste loadings; however, they are difficult to efficiently process in the baseline joule-heated ceramic melters (JHCMs). The CCIM technology can effectively process these advanced waste forms at the desired high waste loadings. This paper describes the most recent collaborative activities between the DOE Office of Environmental Management (DOE EM) and various Russian institutions in modeling, development and testing of advanced waste forms in CCIMs, including FePG and HC-BSG formulations. Additionally, past interactions with other international partners, including France and Korea, are described. Finally, recent enhancements to CCIM processing related to modeling, draining techniques and automated control, which were collaboratively developed, will be discussed. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2013

Ultra-trace determination of Strontium-90 in environmental soil samples from Qatar by collision/reaction cell-inductively coupled plasma mass spectrometry (CRC-ICP-MS/MS)

Because of the very low level of {sup 90}Sr in the environmental soil samples and its determination by beta counting may take several weeks, we developed a procedure for ultra-trace determination of {sup 90}Sr using collision reaction cell-inductively coupled plasma tandem mass spectrometry (CRC-ICP-MS/MS, Agilent 8800). Soil samples were dried at 105 deg. C and then heated in a furnace at 550 deg. C to remove any organics present. 500 g of each soil samples were aliquoted into 2000 ml glass beakers. Each Soils samples were soaked in 2 ppm Sr solution carrier to allow determination of chemical yield. The solid to liquid ratio was 1:1. Finally the soil samples were dried at 105 deg. C. Five hundred milliliters concentrated nitric acid and 250 ml hydrochloric acid volumes were added on 500 g soil samples. The samples were digested on hot plate at 80 deg. C to prevent spraying with continuous manual mixing. The leachate solution was separated. The solids were rinsed with 500 ml deionized water, warmed on a hot plate and the leachate plus previous leachate were filtered and the total volume was reduced to 500 ml by evaporation. Final leachate volume was transferred to a centrifuge tubes. The centrifuge tubes were centrifuged at 3,500 rpm for 10 min. The leachate was transferred to a 1 L beaker and heated on a hot plate to evaporate the leachate to dryness. The reside was re-dissolved in 100 ml of 2% HNO{sub 3} and reduced by evaporation to 10 mL. The solution was measured directly by CRC-ICP-MS/MS by setting the first quadruple analyzer to m/z 90 and introducing oxygen gas into the reaction cell for elimination isobar interference from zirconium-90. The method was validated by measurements of standard reference materials and applied on environmental soil samples. The overall time requirement for the measurement of strontium-90 by CRC-ICP-MS/MS is 2 days, significantly shorter than any radioanalytical protocol currently available. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2011

Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N{sub 2}, O{sub 2} plasmas

Etch characteristics and mechanisms of SiC thin films in HBr-Ar, HBr-N{sub 2}, and HBr-O{sub 2} inductively-coupled plasmas were studied using a combination of experimental and modeling methods. The etch rates of SiC thin films were measured as functions of the additive gas fraction in the range of 0-100% for Ar, N{sub 2}, and O{sub 2} at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). The plasma chemistry was analyzed using Langmuir probe diagnostics and a global (zero-dimensional) plasma model. The good agreement between the behaviors of the SiC etch rate and the H atom flux could suggest that a chemical etch pathway is rather controlled by the gasification of carbon through the CH{sub x} or CH{sub x}Br{sub y} compounds.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2012

Effect of Cl{sub 2}- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

A Cl{sub 2}-HBr-O{sub 2}/Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate ({approx}600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO{sub x} passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl{sub 2}-based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be {approx}1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl{sub 2}-based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl{sub 2}-based ICP etching for the recovery of the InP material.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Effect of O{sub 2} gas partial pressure on mechanical properties of Al{sub 2}O{sub 3} films deposited by inductively coupled plasma-assisted radio frequency magnetron sputtering

The effect of O{sub 2} partial pressure on the mechanical properties of Al{sub 2}O{sub 3} films is studied. Using films prepared by inductively coupled plasma-assisted radio frequency magnetron sputtering, the deposition rate of Al{sub 2}O{sub 3} decreases rapidly when oxygen is added to the argon sputtering gas. The internal stresses in the films are compressive, with magnitude decreasing steeply from 1.6 GPa for films sputtered in pure argon gas to 0.5 GPa for films sputtered in argon gas at an O{sub 2} partial pressure of 0.89 Multiplication-Sign 10{sup -2} Pa. Stress increases gradually with increasing O{sub 2} partial pressure. Using a nanoindentation tester with a Berkovich indenter, film hardness was measured to be about 14 GPa for films sputtered in pure argon gas. Hardness decreases rapidly on the addition of O{sub 2} gas, but increases when the O{sub 2} partial pressure is increased. Adhesion, measured using a Vickers microhardness tester, increases with increasing O{sub 2} partial pressure. Electron probe microanalyzer measurements reveal that the argon content of films decreases with increasing O{sub 2} partial pressure, whereas the O to Al composition ratio increases from 1.15 for films sputtered in pure argon gas to 1.5 for films sputtered in argon gas at O{sub 2} partial pressures over 2.4 Multiplication-Sign 10{sup -2} Pa. X-ray diffraction measurements reveal that films sputtered in pure argon gas have an amorphous crystal structure, whereas {gamma}-Al{sub 2}O{sub 3} is produced for films sputtered in argon gas with added O{sub 2} gas. Atomic force microscopy observations reveal that the surface topography of sputtered Al{sub 2}O{sub 3} films changes from spherical to needlelike as O{sub 2} partial pressure is increased. Fracture cross sections of the films observed by scanning electron microscopy reveal that the film morphology exhibits no discernible features at all O{sub 2} partial pressures.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Effect of bias application to plasma density in weakly magnetized inductively coupled plasma

Independent control of the ion flux and energy can be achieved in a dual frequency inductively coupled plasma (ICP) system. Typically, the plasma density is controlled by the high-frequency antenna radio-frequency (RF) power and the ion energy is controlled by the low-frequency bias RF power. Increasing the bias power has been known to cause a decrease in the plasma density in capacitively coupled discharge systems as well as in ICP systems. However, an applied axial magnetic field was found to sustain or increase the plasma density as bias power is increased. Measurements show higher electron temperatures but lower plasma densities are obtained in ordinary ICP systems than in magnetized ICP systems under the same neutral gas pressure and RF power levels. Explanations for the difference in the behavior of plasma density with increasing bias power are given in terms of the difference in the heating mechanism in ordinary unmagnetized and magnetized ICP systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry

Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1−x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1−x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (∼350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ∼−45 VDC.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effects of magnetic flux density and substrate bias voltage on Ni films prepared on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma

The authors fabricated Ni films on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma. The effects of magnetic flux density B{sub C} and substrate DC bias voltage V{sub S} on the Ni film structures were investigated. For V{sub S} = −40 V, the average surface grain size D{sub G} measured by atomic force microscopy for B{sub C} = 0, 3, and 5 mT was 88.2, 95.4, and 104.4 nm, respectively. In addition, D{sub G} increased with V{sub S}. From x-ray diffraction measurements, the (111) and (200) peaks were clearly visible for the fabricated Ni films. The ratio of the integrated intensities of I(111)/I(200) increased with V{sub S}. For V{sub S} = −40 V and B{sub C} = 3 mT, a film resistivity ρ of 8.96 × 10{sup −6} Ω cm was observed, which is close to the Ni bulk value of 6.84 × 10{sup −6} Ω cm. From these results, the authors determined that the structure of the fabricated Ni films on the flexible substrate material was affected by the values of B{sub C} and V{sub S}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Modeling of inductively coupled plasma SF{sub 6}/O{sub 2}/Ar plasma discharge: Effect of O{sub 2} on the plasma kinetic properties

A global model has been developed for low-pressure, inductively coupled plasma (ICP) SF{sub 6}/O{sub 2}/Ar mixtures. This model is based on a set of mass balance equations for all the considered species, coupled with the discharge power balance equation and the charge neutrality condition. The present study is an extension of the kinetic global model previously developed for SF{sub 6}/Ar ICP plasma discharges [Lallement et al., Plasma Sources Sci. Technol. 18, 025001 (2009)]. It is focused on the study of the impact of the O{sub 2} addition to the SF{sub 6}/Ar gas mixture on the plasma kinetic properties. The simulation results show that the electron density increases with the %O{sub 2}, which is due to the decrease of the plasma electronegativity, while the electron temperature is almost constant in our pressure range. The density evolutions of atomic fluorine and oxygen versus %O{sub 2} have been analyzed. Those atomic radicals play an important role in the silicon etching process. The atomic fluorine density increases from 0 up to 40% O{sub 2} where it reaches a maximum. This is due to the enhancement of the SF{sub 6} dissociation processes and the production of fluorine through the reactions between SF{sub x} and O. This trend is experimentally confirmed. On the other hand, the simulation results show that O(3p) is the preponderant atomic oxygen. Its density increases with %O{sub 2} until reaching a maximum at almost 40% O{sub 2}. Over this value, its diminution with O{sub 2}% can be justified by the high increase in the loss frequency of O(3p) by electronic impact in comparison to its production frequency by electronic impact with O{sub 2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Comparative study of GaN mesa etch characteristics in Cl{sub 2} based inductively coupled plasma with Ar and BCl{sub 3} as additive gases

GaN thin film etching is investigated and compared for mesa formation in inductively coupled plasma (ICP) of Cl{sub 2} with Ar and BCl{sub 3} gas additives using photoresist mask. Etch characteristics are studied as a function of ICP process parameters, viz., ICP power, radio frequency (RF) power, and chamber pressure at fixed total flow rate. The etch rate at each ICP/RF power is 0.1–0.2 μm/min higher for Cl{sub 2}/Ar mixture mainly due to higher Cl dissociation efficiency of Ar additive that readily provides Cl ion/radical for reaction in comparison to Cl{sub 2}/BCl{sub 3} mixture. Cl{sub 2}/Ar mixture also leads to better photoresist mask selectivity. The etch-induced roughness is investigated using atomic force microscopy. Cl{sub 2}/Ar etching has resulted in lower root-mean-square roughness of GaN etched surface in comparison to Cl{sub 2}/BCl{sub 3} etching due to increased Ar ion energy and flux with ICP/RF power that enhances the sputter removal of etch product. The GaN surface damage after etching is also evaluated using room temperature photoluminescence and found to be increasing with ICP/RF power for both the etch chemistries with higher degree of damage in Cl{sub 2}/BCl{sub 3} etching under same condition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N{sub 2} were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500 °C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300 °C. The N:Ga ratio of the film grown at 500 °C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Anisotropic Ta{sub 2}O{sub 5} waveguide etching using inductively coupled plasma etching

Smooth and vertical sidewall profiles are required to create low loss rib and ridge waveguides for integrated optical device and solid state laser applications. In this work, inductively coupled plasma (ICP) etching processes are developed to produce high quality low loss tantalum pentoxide (Ta{sub 2}O{sub 5}) waveguides. A mixture of C{sub 4}F{sub 8} and O{sub 2} gas are used in combination with chromium (Cr) hard mask for this purpose. In this paper, the authors make a detailed investigation of the etch process parameter window. Effects of process parameters such as ICP power, platen power, gas flow, and chamber pressure on etch rate and sidewall slope angle are investigated. Chamber pressure is found to be a particularly important factor, which can be used to tune the sidewall slope angle and so prevent undercut.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Plasma dynamics in a discharge produced by a pulsed dual frequency inductively coupled plasma source

Using a Langmuir probe, time resolved measurements of plasma parameters were carried out in a discharge produced by a pulsed dual frequency inductively coupled plasma source. The discharge was sustained in an argon gas environment at a pressure of 10 mTorr. The low frequency (P{sub 2} {sub MHz}) was pulsed at 1 kHz and a duty ratio of 50%, while high frequency (P{sub 13.56} {sub MHz}) was maintained in the CW mode. All measurements were carried out at the center of the discharge and 20 mm above the substrate. The results show that, at a particular condition (P{sub 2} {sub MHz} = 200 W and P{sub 13.56} {sub MHz }= 600 W), plasma density increases with time and stabilizes at up to ∼200 μs after the initiation of P{sub 2} {sub MHz} pulse at a plasma density of (2 × 10{sup 17} m{sup −3}) for the remaining duration of pulse “on.” This stabilization time for plasma density increases with increasing P{sub 2} {sub MHz} and becomes ∼300 μs when P{sub 2} {sub MHz} is 600 W; however, the growth rate of plasma density is almost independent of P{sub 2} {sub MHz}. Interestingly, the plasma density sharply increases as the pulse is switched off and reaches a peak value in ∼10 μs, then decreases for the remaining pulse “off-time.” This phenomenon is thought to be due to the sheath modulation during the transition from “pulse on” to “pulse off” and partly due to RF noise during the transition period. The magnitude of peak plasma density in off time increases with increasing P{sub 2} {sub MHz}. The plasma potential and electron temperature decrease as the pulse develops and shows similar behavior to that of the plasma density when the pulse is switched off.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

F-atom kinetics in SF{sub 6}/Ar inductively coupled plasmas

The F-atom kinetics in SF{sub 6} and SF{sub 6}/Ar inductively coupled plasmas (ICPs) were investigated using a global model. This report particularly focuses on the effects of ICP power and Ar fraction on F-atom density and its main production and loss mechanisms. The results are presented for a relatively wide pressure range of 1–100 mTorr. Very different behaviors were observed for Ar fractions in the low- and high-pressure limits, which can be attributed to different electron kinetics. In addition, the authors found that increasing the Ar fraction in the SF{sub 6}/Ar plasma has almost the same effects on the F-atom kinetics as increasing the power in the SF{sub 6} plasma. This is because a high electron density occurs in both cases. Moreover, it was confirmed that, for both sample types, a cycle of F atoms formed in the bulk plasma. The source of these is F{sub 2} molecules that are first formed on the chamber wall and then emitted. Finally, the simulations of F-atom kinetics are validated by quantitatively comparing the calculated electron and F-atom densities with identical experimental discharge conditions.

42 ENGINEERING↗