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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 793 records · Page 44
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics

Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm -2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS 2 transistors exhibiting high on/off current ratios over 10 8 , ultralow subthreshold swing of 65 mV dec -1 and ultralow leakage current density of ~10 -6 A cm -2 . Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing ~167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor–insulator transition at the clean-limit Bi 2 Sr 2 CaCu 2 O 8+δ can also be realized through fluoride gating. In conclusion, our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Ultrathin ferroic HfO 2 –ZrO 2 superlattice gate stack for advanced transistors

With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage. This led to a fundamental change in the gate stack in 2008, the incorporation of high-dielectric-constant HfO 2 , which remains the material of choice to date. Here we report HfO 2 –ZrO 2 superlattice heterostructures as a gate stack, stabilized with mixed ferroelectric–antiferroelectric order, directly integrated onto Si transistors, and scaled down to approximately 20 ångströms, the same gate oxide thickness required for high-performance transistors. The overall equivalent oxide thickness in metal–oxide–semiconductor capacitors is equivalent to an effective SiO 2 thickness of approximately 6.5 ångströms. Such a low effective oxide thickness and the resulting large capacitance cannot be achieved in conventional HfO 2 -based high-dielectric-constant gate stacks without scavenging the interfacial SiO 2 , which has adverse effects on the electron transport and gate leakage current. Accordingly, our gate stacks, which do not require such scavenging, provide substantially lower leakage current and no mobility degradation. This work demonstrates that ultrathin ferroic HfO 2 –ZrO 2 multilayers, stabilized with competing ferroelectric–antiferroelectric order in the two-nanometre-thickness regime, provide a path towards advanced gate oxide stacks in electronic devices beyond conventional HfO 2 -based high-dielectric-constant materials.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Charge fluctuations from molecular simulations in the constant-potential ensemble

We revisit the statistical mechanics of charge fluctuations in capacitors. In constant-potential classical molecular simulations, the atomic charges of electrode atoms are treated as additional degrees of freedom which evolve in time so as to satisfy the constraint of fixed electrostatic potential for each configuration of the electrolyte. The present work clarifies the role of the overall electroneutrality constraint, as well as the link between the averages computed within the Born–Oppenheimer approximation and that of the full constant-potential ensemble. This allows us in particular to derive a complete fluctuation–dissipation relation for the differential capacitance, that includes a contribution from the charge fluctuations (around the charges satisfying the constant-potential and electroneutrality constraints) also present in the absence of an electrolyte. We provide a simple expression for this contribution from the elements of the inverse of the matrix defining the quadratic form of the fluctuating charges in the energy. We then illustrate numerically the validity of our results, and recover the expected continuum result for an empty capacitor with structureless electrodes at large inter-electrode distances. By considering a variety of liquids between graphite electrodes, we confirm that this contribution to the total differential capacitance is small compared to that induced by the thermal fluctuations of the electrolyte.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

Understanding cation effects in electrochemical CO 2 reduction

Solid–liquid interface engineering has recently emerged as a promising technique to optimize the activity and product selectivity of the electrochemical reduction of CO 2 . In particular, the cation identity and the interfacial electric field have been shown to have a particularly significant impact on the activity of desired products. Using a combination of theoretical and experimental investigations, we show the cation size and its resultant impact on the interfacial electric field to be the critical factor behind the ion specificity of electrochemical CO 2 reduction. We present a multi-scale modeling approach that combines size-modified Poisson–Boltzmann theory with ab initio simulations of field effects on critical reaction intermediates. The model shows an unprecedented quantitative agreement with experimental trends in cation effects on CO production on Ag, C 2 production on Cu, CO vibrational signatures on Pt and Cu as well as Au(111) single crystal experimental double layer capacitances. The insights obtained represent quantitative evidence for the impact of cations on the interfacial electric field. Lastly, we present design principles to increase the activity and selectivity of any field-sensitive electrochemical process based on the surface charging properties: the potential of zero charge, the ion size, and the double layer capacitance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Tracking ion intercalation into layered Ti 3 C 2 MXene films across length scales

Enhancing the energy stored and power delivered by layered materials relies strongly on improved understanding of the intricate interplay of electrolyte ions, solvents, and electrode interactions as well as the role of confinement. Here we report a highly integrated study with multiscale theory/modelling and experiments to track the intercalation of aqueous Li + , Na + , K + , Cs + , and Mg 2+ ions into Ti 3 C 2 MXene. The integrated analysis of experiments assisted by theory/modelling allows for a deep understanding of energy storage processes highlighting the importance of the dynamics of cations, their positionings between MXene sheets, their effects on mechanical properties and capacitive energy storage. Computational simulations and operando calorimetry measurements prove the processes involving cation dehydration and H+ rehydration, showing a good correlation for heat variations between experiments and theory. Operando liquid AFM mapped energy dissipation of ions appears non-uniformly across the MXene surface, indicating heterogeneities of ions inside the MXene and confirming partially the ion behaviour obtained in theory. We directly demonstrate that the average distance between the cation and MXene surface follows a modified two-sided Helmholtz model when plotted versus the open circuit potential capacitance, revealing a different electrical double layer mechanism in confinement. This new fundamental understanding lays the foundation for improved functional devices utilizing electrodes and membranes made of two-dimensional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effects of dilution in ionic liquid supercapacitors

Room-temperature ionic liquids (RTILs) are synthetic electrolytes that have a large electrochemical stability window, making them attractive candidates for electric double-layer capacitor (EDLC) applications. Due to their high viscosities and low ionic conductivities, RTILs are often diluted with organic solvent for practical use. Here, we study the effects of dilution on the performance of RTIL EDLCs using a simple mean-field model. We find that dilution diminishes the unfavorable hysteresis that results from a spontaneous surface charge separation (SSCS). As a result, the RTIL concentration can be used to modulate the proximity to the SSCS transition, and maximize capacitance. The interplay between the concentration and the correlation strength gives rise to complex zero-potential phase behavior, including a tricritical point and a λ-line, very similar to the Blume–Capel dilute Ising model. Additionally, electrodes that are solvophilic aid in the prevention of SSCS by drawing solvent molecules to the electrode and displacing ions. Solvophilic electrodes give rise to a phase transition at finite potential where the surface charge rapidly increases with a small increase in potential, leading to a substantial increase in capacitance and energy storage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

MXene/graphitic carbon nitride-supported metal selenide for all-solid-state flexible supercapacitor and oxygen evolution reaction

We report a new type of combination of rare earth metal selenides (Ce 2 Se 3 and Er 2 Se 3 ) with a Ti 3 C 2 T x /S-doped graphitic carbon nitride heterostructure for bifunctional application in flexible supercapacitors and oxygen evolution reactions. The incorporation of S-doped graphitic carbon nitride in MXenes reduced the layer stacking tendency of both two-dimensional sheets and eliminated volume expansion by forming a heterostructure. Cerium and erbium rare earth metal centers induce reactive surface sites, whereas binary layers of Ti 3 C 2 T x /S-doped graphitic carbon nitride provide a conducting matrix for the homogeneous growth of the metal selenides. The assembled all-solid-state flexible asymmetric supercapacitor exhibited a high specific capacitance of 60 F g –1 , an energy density of 10.1 W h kg –1 (volumetric energy density: 0.9 mW h cm –3 ) at 2 A g –1 , and 100% capacitance retention after 10 000 charge–discharge cycles with good flexibility for real-time applications. Furthermore, the optimum nanohybrid showed a low overpotential of 280 mV and a Tafel slope of 99 mV dec –1 with durable electrocatalytic performance. Furthermore, this work is the first to investigate the bifunctional energy efficiency of rare earth metal selenides grown over MXene materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

High-efficiency frost and ice control via sensing-assisted nanovibrational slippery surfaces

Frost and ice accretions on surfaces pose persistent challenges across numerous industrial, residential and transportation systems. While various removal strategies exist, they often suffer from limited effectiveness or high energy consumption, such as frosting delay, ice crack generation, and Joule heating. Here, in this work, we report a novel integrated approach combining vibrational quasi-liquid surface (QLS) and capacitive sensing for efficient condensate, frost, and ice management. Compared to Joule heating, our approach does not rely on complete melting and evaporation for removal, resulting in 68% and 95% energy savings for frost and ice removal, respectively. Our QLS coating significantly reduces surface retention forces, achieving 91% and 87% less residual mass compared to hydrophilic surfaces for frost and ice removal through surface nanovibration, respectively. The integrated capacitive sensor provides real-time detection of different phase states, enabling on-demand removal in precise timeframes. This sensor-assisted approach showed 3.8 times lower energy consumption compared to conventional Joule heating for defrosting. This synergistic integration of surface engineering, nanovibration, and intelligent sensing represents a significant advancement in phase change processes, offering an energy-efficient solution for frost and ice mitigation in energy-intensive systems.

Shen, Yuchen [Univ. of Texas at Dallas, Richardson↗
DOE OSTI2026

Graphene oxide precursor effects on 3D-printed carbon scaffolds

Manganese oxide (MnO 2 ), an earth-abundant material, is a promising component for energy storage devices, with uses in both pseudocapacitors and batteries. However, high MnO 2 loading often leads to reduced performance due to poor ion diffusion. 3D printing, particularly using the direct ink writing (DIW) technique, offers a solution by enabling the fabrication of electrodes with hierarchical porous structures and open channels that enhance mass transport and ion diffusion. Previous work demonstrated that 3D-printed graphene aerogels with MnO 2 coatings exhibited excellent electrochemical performance, even with thick electrodes, due to their optimized structure. Building on this work, the current study investigates the performance differences between aerogels developed using graphene oxide (GO) and reduced graphene oxide (rGO) as carbon precursors. Both materials were incorporated into thixotropic inks, 3D-printed into lattice structures, and carbonized. Despite expected similarities between the final graphene aerogel, rGO-based aerogels exhibited superior areal capacitance, compared to GO-based aerogels. These differences are attributed to the lower oxygen content and defect density of rGO, which influence its interaction with cellulose viscosifiers in the ink formulation. Brunauer–Emmett–Teller (BET) surface area analysis revealed that rGO aerogels exhibit a larger surface area and mesoporous structure, further enhancing their performance. When coated with MnO 2 , rGO-based aerogels maintained their superior capacitive behavior over GO-based aerogels. This study highlights the effect of carbon precursor on the end performance of graphene aerogels.

Materials science↗
DOE OSTI2018

A new B-dot probe circuit for magnetic diagnostics of radio frequency discharges

Accurate magnetic measurements in radio frequency capacitively coupled plasmas (CCP) are challenging due to the presence of inherently strong electric fields and relatively weak magnetic fields. In this work, a new B-dot probe circuit is presented, comprising two variable capacitors in a tunable series resonance circuit, with a center-tapped, step-up transformer. The output characteristics of the probe are predicted using two distinct equivalent circuit models, one for the differential mode and the other for the common mode. A Helmholtz coil and a Faraday cup are used for experimental validation of the predicted probe output. By tuning the two variable capacitors in the circuit, the magnetic probe can achieve improved signal-to-noise ratio by amplifying the inductive signal, while suppressing capacitive coupling interference. Finally, using the newly designed probe, magnetic measurements in typical CCP are presented.

47 OTHER INSTRUMENTATION↗
DOE OSTI2019

Radio-frequency wave interactions with a plasma sheath in oblique-angle magnetic fields using a sheath impedance model

Here, the physics of interactions between waves in plasmas and sheaths for background magnetic fields which make oblique angles with the sheath surfaces is studied with the use of the self-consistent finite element code rfSOL incorporating the recently developed sheath impedance model. The calculation based on this model employs the generalized sheath boundary condition (sheath BC), which surpasses the previously used capacitive sheath BC in reliability by taking into account the contributions of the ion and electron currents in the sheath as well as the displacement current. A series of numerical simulations is carried out in two-dimensional slab geometry with a flat or curved sheath surface as part of the boundary. It is shown that the sheath–plasma wave appears when the equilibrium magnetic field line angle with respect to the sheath surface is small, the absolute value of the radio-frequency (RF) sheath voltage is large, and the plasma density is slightly higher than the lower hybrid resonance density (LHR density), all of which bring the sheath property closer to being capacitive. It is also shown that the sharp variation of the magnetic field line angle along the sheath surface can sensitively affect the maximum absolute value of the RF sheath voltage at a plasma density slightly lower than the LHR density.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Does capillary evaporation limit the accessibility of nonaqueous electrolytes to the ultrasmall pores of carbon electrodes?

Porous carbons have been widely utilized as electrode materials for capacitive energy storage. Whereas the significance of pore size and geometry on the device performance has been well recognized, little guidance is available for identification of carbon materials with ideal porous structures. Here, we study the phase behavior of ionic fluids in slit pores using the classical density functional theory. Within the framework of the restricted primitive model for nonaqueous electrolytes, we demonstrate that the accessibility of micropores depends not only on the ionic diameters (or desolvation) but also on their wetting behavior intrinsically related to the vapor-liquid or liquid-liquid phase separation of the bulk ionic systems. Narrowing the pore size from several tens of nanometers to subnanometers may lead to a drastic reduction in the capacitance due to capillary evaporation. The wettability of micropores deteriorates as the pore size is reduced but can be noticeably improved by raising the surface electrical potential. The theoretical findings provide fresh insights into the properties of confined ionic systems beyond electric double layer models commonly employed for rational design/selection of electrolytes and electrode materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

High sensitivity hexagonal boron nitride lateral neutron detectors

Hexagonal boron nitride (h-BN) thermal neutron detectors have demonstrated the highest detection efficiency among all solid-state detectors (at 58% for a detection area of 1 mm 2 and 53% for a detection area of 9 mm 2 ). However, scaling up the detector size of vertical h-BN detectors is challenging due to increased dark current, capacitance, and surface recombination with the increasing detection area. Here, we report the demonstration of a 29 mm 2 thermal neutron detector fabricated from a freestanding 10 B enriched h-BN epilayer of 90 μm in thickness with a detection efficiency of 50% by employing a lateral device geometry. The lateral detector geometry takes advantage of the unique layered structure of h-BN which naturally provides higher in-plane carrier mobilities than those in the vertical direction. Moreover, due to the reduced area of metals in contact with the h-BN material, the detrimental effects associated with the surface recombination at the metal contacts and device capacitance were reduced, which resulted in improved charge collection efficiency and signal to noise ratios. Furthermore, this work laid the ground work for scaling up to large size neutron detectors based on h-BN.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Determination of background doping polarity of unintentionally doped semiconductor layers

Here, we present a method of determining the background doping type in semiconductors using capacitance–voltage measurements on overetched double mesa p–i–n or n–i–p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p–n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p–i–n and n–i–p structures, concluded that the material is residually doped p-type, which is well established by other sources. The method was then applied to a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type.

42 ENGINEERING↗
DOE OSTI2020

Power matching to pulsed inductively coupled plasmas

Matching of power delivery to nonlinear loads in plasma processing is a continuing challenge. Plasma reactors used in microelectronics fabrication are increasingly multi-frequency and/or pulsed, producing a non-linear and, in many cases, non-steady state electrical termination that can complicate efficient power coupling to the plasma. This is particularly the case for pulsed inductively coupled plasmas where the impedance of the plasma can significantly change during the start-up-transient and undergo an E–H (capacitive-to-inductive) transition. In this paper, we discuss the results from a computational investigation of the dynamics of power matching to pulsed inductively coupled plasmas (Ar/Cl 2 mixtures of tens of mTorr pressure) using fixed component impedance matching networks and their consequences on plasma properties. In this investigation, we used set-point matching where the components of the matching network provide a best-case impedance match (relative to the characteristic impedance of the power supply) at a chosen time during the pulsed cycle. Matching impedance early during the pulse enables power to feed the E-mode, thereby emphasizing capacitive coupling and large excursions in the plasma potential. This early power coupling enables a more rapid ramp-up in plasma density while being mismatched during the H-mode later in the pulse. The early match also produces more energetic ion bombardment of surfaces. Matching late in the pulse diminishes power dissipated in the E-mode at the cost of also reducing the rate of increase in plasma density.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

A multi-dimensional Child–Langmuir law for any diode geometry

While prior theoretical studies of multi-dimensional space-charge limited current (SCLC) assumed emission from a small patch on infinite electrodes, none have considered emission from an entire finite electrode. In this paper, we apply variational calculus (VC) and conformal mapping, which have previously been used to derive analytic solutions for SCLC density (SCLCD) for nonplanar one-dimensional geometries, to obtain mathematical relationships for any multi-dimensional macroscopic diode with finite cathode and anode. We first derive a universal mathematical relationship between space-charge limited potential and vacuum potential for any diode and apply this technique to determine SCLCD for an eccentric spherical diode. We then apply VC and the Schwartz–Christoffel transformation to derive an exact equation for SCLCD in a general two-dimensional planar geometry with emission from a finite emitter. Particle-in-cell simulations using VSim agreed within 4%–13% for a range of ratios of emitter width to gap distance using the thinnest electrodes practical for the memory constraints of our hardware, with the difference partially attributed to the theory's assumption of infinitesimally thin electrodes. After generalizing this approach to determine SCLCD for any orthogonal diode as a function of only the vacuum capacitance and vacuum potential, we derive an analytical formulation of the three-dimensional Child–Langmuir law for finite parallel rectangular and disk geometries. These results demonstrate the utility for calculating SCLCD for any diode geometry using vacuum capacitance and vacuum potential, which are readily obtainable for many diode geometries, to guide experiment and simulation development.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes

A model was developed for the operation of a GaN pn junction vertical diode which includes rate equations for carrier capture and thermally activated emission by substitutional carbon impurities and carrier generation by ionizing radiation. The model was used to simulate the effect of ionizing radiation on the charge state of carbon. These simulations predict that with no applied bias, carbon is negatively charged in the n-doped layer, thereby compensating n-doping as experimentally observed in diodes grown by metal-organic chemical vapor deposition. With reverse bias, carbon remains negative in the depletion region, i.e., compensation persists in the absence of ionization but is neutralized by exposure to ionizing radiation. This increases charge density in the depletion region, decreases the depletion width, and increases the capacitance. The predicted increase in capacitance was experimentally observed using a pulsed 70 keV electron beam as the source of ionization. In additional confirming experiments, the carbon charge-state conversion was accomplished by photoionization using sub-bandgap light or by the capture of holes under forward bias.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Proton radiation effects on electronic defect states in MOCVD-grown (010) β -Ga 2 O 3

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8 × 10 13 cm –2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm –1 . The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E c -2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E c -0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E C -0.36, E C -0.63, and E C -1.09 eV were newly detected after proton irradiation, and two pre-existing states at E C -1.2 and E C -4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E c -0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.

42 ENGINEERING↗