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This report covers in detail the research work of the Solid State Division at Lincoln Laboratory for the period 1 May-31 July 1995. The topics covered are: Electrooptical Devices, Quantum Electronics, Materials Research, Submicrometer Technology, High Speed Electronics, Microelectronics, and analog device technology. Funding is provided primarily by the Air Force, with additional Support provided by the Army, ARPA, Navy, BMDO, NASA and NIST.
Research into processing techniques for fabrication of vacuum microelectronic devices has been carried out, with special emphasis being given to the growth of silicon dioxide thin films. Oxide films ranging from 30 nm to approximately 2 micrometers have been grown on single crystal silicon wafers. Metal-oxide-semiconductor capacitor test structures have been made from some of these oxide films, and current-versus-voltage plots for these structures have been measured. It has been observed that the rate of applied voltage across the oxide films produces marked differences in measured leakage current. Breakdown fields across two of the thinnest oxide films have been measured and are comparable with highest values reported in literature. Several silicon wafers were processed to make field- emitter array diodes, and were delivered to collaborators at NASA-Lewis Research Center for final fabrication steps and testing.
This report covers in detail the research work of the Solid State Division at Lincoln Laboratory for the period 1 May - 31 July 1996. The topics covered are Electrooptical Devices, Quantum Electronics, Materials Research, Submicrometer Technology, High Speed Electronics, Microelectronics, and Analog Device Technology. Funding is provided primarily by the Air Force, with additional Support provided by the Army, DARPA, Navy, BMDO, NASA, and NIST.
This report documents the efforts and progress in developing a 'system-level' integrated circuit, or SLIC, for application in advanced phased array antenna systems. The SLIC combines radio-frequency (RF) microelectronics, digital and analog support circuitry, and photonic interfaces into a single micro-hybrid assembly. Together, these technologies provide not only the amplitude and phase control necessary for electronic beam steering in the phased array, but also add thermally-compensated automatic gain control, health and status feedback, bias regulation, and reduced interconnect complexity. All circuitry is integrated into a compact, multilayer structure configured for use as a two-by-four element phased array module, operating at 20 Gigahertz, using a Microwave High-Density Interconnect (MHDI) process. The resultant hardware is constructed without conventional wirebonds, maintains tight inter-element spacing, and leads toward low-cost mass production. The measured performances and development issues associated with both the two-by-four element module and the constituent elements are presented. Additionally, a section of the report describes alternative architectures and applications supported by the SLIC electronics. Test results show excellent yield and performance of RF circuitry and full automatic gain control for multiple, independent channels. Digital control function, while suffering from lower manufacturing yield, also proved successful.
In this work a preliminary study of the vacuum evaporation of silicon extracted from the lunar regolith has been undertaken. An electron gun vacuum evaporation system has been adapted for this purpose. Following the calibration of the system using ultra high purity silicon deposited on Al coated glass substrates, thin films of lunar Si were evaporated on a variety of crystalline substrates as well as on glass and lightweight 1 mil (25 microns) Al foil. Extremely smooth and featureless films with essentially semiconducting properties were obtained. Optical absorption analysis sets the bandgap (about 1.1 eV) and the refractive index (n=3.5) of the deposited thin films close to that of crystalline silicon. Secondary ion mass spectroscopy and energy dispersive spectroscopy analysis indicated that these films are essentially comparable to high purity silicon and that the evaporation process resulted in a substantial reduction of impurity levels. All layers exhibited a p-type conductivity suggesting the presence of a p-type dopant in the fabricated layers. While the purity of the 'lunar waste material' is below that of the 'microelectronic-grade silicon', the vacuum evaporated material properties seems to be adequate for the fabrication of average performance Si-based devices such as thin film solar cells. Taking into account solar cell thickness requirements (greater than 10 microns) and the small quantities of lunar material available for this study, solar cell fabrication was not possible. However, the high quality of the optical and electronic properties of evaporated thin films was found to be similar to those obtained using ultra-high purity silicon suggest that thin film solar cell production on the lunar surface with in situ resource utilization may be a viable approach for electric power generation on the moon.
The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.
The project Fine Collimator Grids Using Silicon Metering Structure was managed by Dr. Carol Eberhard of the Electromagnetic Systems & Technology Department (Space & Technology Division) of TRW who also wrote this final report. The KOH chemical etching of the silicon wafers was primarily done by Dr. Simon Prussin of the Electrical Engineering Department of UCLA at the laboratory on campus. Moshe Sergant of the Superconductor Electronics Technology Department (Electronics Systems & Technology Division) of TRW and Dr. Prussin were instrumental in developing the low temperature silicon etching processes. Moshe Sergant and George G. Pinneo of the Microelectronics Production Department (Electronics Systems & Technology Division) of TRW were instrumental in developing the processes for filling the slots etched in the silicon wafers with metal-filled materials. Their work was carried out in the laboratories at the Space Park facility. Moshe Sergant is also responsible for the impressive array of Scanning Electron Microscope images with which the various processes were monitored. Many others also contributed their time and expertise to the project. I wish to thank them all.
This paper presents a low-weight stereo camera concept for planetary exploration. The camera uses three CCD lines within the image plane of one single objective. Some of the main features of the camera include: focal length-90 mm, FOV-18.5 deg, IFOV-78 (mu)rad, convergence angles-(+/-)10 deg, radiometric dynamics-14 bit, weight-2 kg, and power consumption-12.5 Watts. From an orbit altitude of 250 km the ground pixel size is 20m x 20m and the swath width is 82 km. The CCD line data is buffered in the camera internal mass memory of 1 Gbit. After performing radiometric correction and application-dependent preprocessing the data is compressed and ready for downlink. Due to the aggressive application of advanced technologies in the area of microelectronics and innovative optics, the low mass and power budgets of 2 kg and 12.5 Watts is achieved, while still maintaining high performance. The design of the proposed light-weight camera is also general purpose enough to be applicable to other planetary missions such as the exploration of Mars, Mercury, and the Moon. Moreover, it is an example of excellent international collaboration on advanced technology concepts developed at DLR, Germany, and NASA's Jet Propulsion Laboratory, USA.
Hybrid microelectronics containing both conventional electronic components and high-temperature superconductive films have been designed, fabricated, and tested. The devices operate from room temperature to 75K and perform d.c. four-probe resistance measurements on six superconductive specimens resident on each circuit. Four of these hybrid circuits were incorporated into the Materials In Devices As Superconductors (MIDAS) spaceflight experiment and evaluated over a 90-day period on the Mir space station. Prior to launch, comprehensive testing of the flight circuits was performed to determine the effects of thermal cycling, vibration loads, and long-term operation on circuit performance. This report describes the fabrication and assembly procedures used to produce the hybrid circuits, the techniques used to integrate the circuits into the MIDAS hardware system, and the results of pre-flight evaluations which verified circuit functionality.
This paper reports on the design and characterization of a small, low power, and low weight instrument, a High-LET Radiation Spectrometer (HiLRS), that measures energy deposited by heavy ions in microelectronic devices. The HILRS operates on pulse-height analysis principles and is designed for space and avionics applications. The detector component in the instrument is based on large scale arrays of p-n junctions. In this system, the pulse amplitude from a particle hit is directly proportional to the particle LET. A prototype flight unit has been fabricated and calibrated using several heavy ions with varying LETs and protons with several energies. The unit has been delivered to the Ballistic Missile Defense Organization (BMDO) c/o the Air Force Research Laboratory in Albuquerque, NM, for integration into the military Space Technology Research Vehicle (STRV), a US-UK cooperative mission. Another version of HILRS is being prepared for delivery in April to the Hubble Space Telescope (HST) project, to fly on the HST Orbital Systems Test (HOST) Platform on a shuttle mission.
This paper addresses the accuracy of radiation-induced upset-rate predictions in space using the results of ground-based measurements together with standard environmental and device models. The study is focused on two part types - 16 Mb NEC DRAM's (UPD4216) and 1 Kb SRAM's (AMD93L422) - both of which are currently in space on board the Microelectronics and Photonics Test Bed (MPTB). To date, ground-based measurements of proton-induced single event upset (SEM cross sections as a function of energy have been obtained and combined with models of the proton environment to predict proton-induced error rates in space. The role played by uncertainties in the environmental models will be determined by comparing the modeled radiation environment with the actual environment measured aboard MPTB. Heavy-ion induced upsets have also been obtained from MPTB and will be compared with the "predicted" error rate following ground testing that will be done in the near future. These results should help identify sources of uncertainty in predictions of SEU rates in space.
In January of 1999 the NM DS-2 Mars microprobe will be launched to impact on Mars in December. The technical objectives of the missions are to demonstrate: key technologies, a passive atmospheric entry, highly integrated microelectronics which can withstand both low temperatures and high decelerations, and the capability to conduct in-situ, surface and subsurface science data acquisition. The scientific objectives are to determine if ice is present below the Martian surface, measure the local atmospheric pressure, characterize the thermal properties of the martian subsurface soil, and to estimate the vertical temperature gradient of the Martian soil. The battery requirements are 2-4 cell batteries, with voltage of 6-14 volts, capacity of 550 mAh at 80C, and 2Ah at 25C, shelf life of 2.5 years, an operating temperature of 60C and below, and the ability to withstand shock impact of 80,000 g's. The technical challenges and the approach is reviewed. The Li-SOCL2 system is reviewed, and graphs showing the current and voltage is displayed, along with the voltage over discharge time. The problems encountered during the testing were: (1) impact sensitivity, (2) cracking of the seals, and (3) delay in voltage. A new design resulted in no problems in the impact testing phase. The corrective actions for the seal problems involved: (1) pre weld fill tube, (2) an improved heat sink during case to cover weld and (3) change the seal dimensions to reduce stress. To correct the voltage delay problem the solutions involved: (1) drying the electrodes to reduce contamination by water, (2) assemblage of the cells within a week of electrode manufacture, (3) ensure electrolyte purity, and (4) provide second depassivation pulse after landing. The conclusions on further testing were that the battery can: (1) withstand anticipated shock of up to 80,000 g, (2) meet the discharge profile post shock at Mars temperatures, (3) meet the required self discharge rate and (4) meet environmental requirements.
In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species concentration, temperature, ion energy distribution, and electron number density. A wide variety of diagnostic techniques are under development through this consortium grant to measure these parameters. including molecular beam mass spectrometry (MBMS). Fourier transform infrared (FTIR) spectroscopy, broadband ultraviolet (UV) absorption spectroscopy, a compensated Langmuir probe. Additional diagnostics. Such as microwave interferometry and microwave absorption for measurements of plasma density and radical concentrations are also planned.
Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects described in section IVA. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses [Srou88a, Summ92, Hopk97] which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves.
Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves. Ion-solid interactions and the nature of the displacement damage they generate have been studied extensively for over half a century, yet they still remain a subject of investigation. In this section, a description of the mechanisms by which displacement damage is produced will be followed by a summary of the major consequences for device performance in a space environment. Often the degradation of a device parameter can be characterized by a damage factor (measured in a laboratory using monoenergetic protons) that is simply the change in a particular electrical or optical parameter per unit proton fluence. In addition, we will describe the concept of a non-ionizing energy loss rate (NIEL) which quantifies that portion of the energy lost by an incident ion that goes into displacements. It has been calculated as a function of proton energy, and is analogous to (and has the same units as) the linear energy transfer (LET) for ionizing energy. We will discover that, to first order, the calculated NIEL describes the energy dependence of the measured device damage factors. This observation provides the basis for predicting proton induced device degradation in a space environment based on both the calculated NIEL and relatively few laboratory test measurements. The methodology of such on-orbit device performance predictions will be described, as well as the limitations. Several classes of devices for which displacement damage is a significant (if not the dominant) mode of radiation induced degradation will be presented.
Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.
This report summarizes the results of a three year effort by Blue Line Engineering Co. to advance the state of segmented mirror systems in several separate but related areas. The initial set of tasks were designed to address the issues of system level architecture, digital processing system, cluster level support structures, and advanced mirror fabrication concepts. Later in the project new tasks were added to provide support to the existing segmented mirror testbed at Marshall Space Flight Center (MSFC) in the form of upgrades to the 36 subaperture wavefront sensor. Still later, tasks were added to build and install a new system processor based on the results of the new system architecture. The project was successful in achieving a number of important results. These include the following most notable accomplishments: 1) The creation of a new modular digital processing system that is extremely capable and may be applied to a wide range of segmented mirror systems as well as many classes of Multiple Input Multiple Output (MIMO) control systems such as active structures or industrial automation. 2) A new graphical user interface was created for operation of segmented mirror systems. 3) The development of a high bit rate serial data loop that permits bi-directional flow of data to and from as many as 39 segments daisy-chained to form a single cluster of segments. 4) Upgrade of the 36 subaperture Hartmann type Wave Front Sensor (WFS) of the Phased Array Mirror, Extendible Large Aperture (PAMELA) testbed at MSFC resulting in a 40 to 5OX improvement in SNR which in turn enabled NASA personnel to achieve many significant strides in improved closed-loop system operation in 1998. 5) A new system level processor was built and delivered to MSFC for use with the PAMELA testbed. This new system featured a new graphical user interface to replace the obsolete and non-supported menu system originally delivered with the PAMELA system. The hardware featured Blue Line's new stackable processing system which included fiber optic data links, a WFS digital interface, and a very compact and reliable electronics package. The project also resulted in substantial advances in the evolution of concepts for integrated structures to be used to support clusters of segments while also serving as the means to distribute power, timing, and data communications resources. A prototype cluster base was built and delivered that would support a small array of 7 cm mirror segments. Another conceptual design effort led to substantial progress in the area of laminated silicon mirror segments. While finished mirrors were never successfully produced in this exploratory effort, the basic feasibility of the concept was established through a significant amount of experimental development in microelectronics processing laboratories at the University of Colorado in Colorado Springs. Ultimately lightweighted aluminum mirrors with replicated front surfaces were produced and delivered as part of a separate contract to develop integrated segmented mirror assemblies. Overall the project was very successful in advancing segmented mirror system architectures on several fronts. In fact, the results of this work have already served as the basic foundation for the system architectures of several projects proposed by Blue Line for different missions and customers. These include the NMSD and AMSD procurements for NASA's Next Generation Space Telescope, the HET figure maintenance system, and the 1 meter FAST telescope project.
Initiated in January, 1997, under NASA's Office of Life and Microgravity Sciences and Applications, the Wireless Augmented Reality Prototype (WARP) is a means to leverage recent advances in communications, displays, imaging sensors, biosensors, voice recognition and microelectronics to develop a hands-free, tetherless system capable of real-time personal display and control of computer system resources. Using WARP, an astronaut may efficiently operate and monitor any computer-controllable activity inside or outside the vehicle or station. The WARP concept is a lightweight, unobtrusive heads-up display with a wireless wearable control unit. Connectivity to the external system is achieved through a high-rate radio link from the WARP personal unit to a base station unit installed into any system PC. The radio link has been specially engineered to operate within the high- interference, high-multipath environment of a space shuttle or space station module. Through this virtual terminal, the astronaut will be able to view and manipulate imagery, text or video, using voice commands to control the terminal operations. WARP's hands-free access to computer-based instruction texts, diagrams and checklists replaces juggling manuals and clipboards, and tetherless computer system access allows free motion throughout a cabin while monitoring and operating equipment.