Metals Coprecipitation with Barite: Nano-XRF Observation of Enhanced Strontium Incorporation
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Society’s long-standing energy demands have fuelled for centuries the quest for power-dense, portable and economically viable energy carriers. Since the birth of the first rechargeable battery in 1860, emerging battery technologies have provided both answers to these demands as well as additional obstacles. One ubiquitous energy storage device, the metal or metalion battery, offers quintessential examples of both. The strongly reducing nature of Group 1 and 2 metal ions qualifies these elements as viable energy-dense anode materials: standard reduction potentials several volts below that of the standard hydrogen electrode (SHE) allow a thermodynamically favourable oxidation of these metals to readily release electrons that shuttle through an external circuit, generating the electric current that serves as the power supply during battery discharge. Integration of energy-dense materials into devices allows power sources to be compact and portable, by maximizing energy output per unit mass of material. Further, the reversibility of these oxidation events makes possible extensive battery cycling, thus providing a rechargeable power source. Indeed, current Li-ion batteries boast an energy density of 265 Wh kg -1 , with the potential of a 20% improvement, and are operable for over 1000 charge–discharge cycles.
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Using the strongly constrained and appropriately normed (SCAN) and SCAN+U approximations for describing electron exchange-correlation (XC) within density functional theory, we investigate the oxidation energetics, lattice constants, and electronic structure of binary Ce-, Mn-, and Fe-oxides, which are crucial ingredients for generating renewable fuels using two-step, oxide-based, solar thermochemical reactors. Unlike other common XC functionals, we find that SCAN does not over-bind the O 2 molecule, based on direct calculations of its bond energy and robust agreement between calculated formation enthalpies of main group oxides versus experiments. However, in the case of transition-metal oxides (TMOs), SCAN systematically overestimates (i.e., yields too negative) oxidation enthalpies due to remaining self-interaction errors in the description of their ground-state electronic structure. Adding a Hubbard U term to the transition-metal centers, where the magnitude of U is determined from experimental oxidation enthalpies, significantly improves the qualitative agreement and marginally improves the quantitative agreement of SCAN+U-calculated electronic structure and lattice parameters, respectively, with experiments. Importantly, SCAN predicts the wrong ground-state structure for a few oxides, namely, Ce 2 O 3 , Mn 2 O 3 , and Fe 3 O 4 , while SCAN+U predicts the right polymorph for all systems considered in this work. Furthermore, the SCAN+U framework, with an appropriately determined U, will be required to accurately describe ground-state properties and yield qualitatively consistent electronic properties for most transition-metal and rare earth oxides.
We have proposed a peculiar model of the plasma of dense metal vapors, containing atoms embedded into the electron jelly, as well as free (thermally ionized) electrons and ions. The main feature of the model is the presence of the electron jelly existing at any density of the atomic component. The number of electrons in the jelly increases under compression. The process of its formation can be called the “cold” ionization, or pressure ionization. The composition of the gas–plasma mixture, including the concentration of atoms and electrons in the jelly, as well as the concentration of free thermally ionized electrons and ions, has been calculated. The conductivity of dense vapors is determined by the sum of the conductivities of thermal electrons (which is calculated using the Frost formula) and jelly electrons (which is calculated by the Regel–Ioffe formula for the minimal metal-type conductivity). The concentration of thermal electrons decreases and the concentration of jelly electrons increases upon compression of the vapor. Accordingly, the conductivity varies from the conductivity of thermal electrons to the conductivity of jelly electrons, continuously passing through the minimum. The calculated values of the conductivity of supercritical metal vapors are in satisfactory agreement with experimental results.
A quasi-two-dimensional (ET){sub 8}Hg{sub 4}Br{sub 12}(C{sub 6}H{sub 5}Cl){sub 2} organic metal undergoes the metal–dielectric transition at T ~ 90 K upon cooling. An external pressure of P ~ 6 kbar completely recovers the metallic state and makes it possible to observe the Shubnikov–de Hass oscillations with a frequency of F ≈ 215 T and a cyclotron mass of m* ≈ 0.95m{sub 0}. The behavior of the oscillations is consistent with the Fermi surface representation in the form of electron and hole orbits covering the same areas of the first Brillouin zone.
The melting curves of rhenium and osmium to megabar pressures are obtained from an extensive suite of ab initio quantum molecular dynamics (QMD) simulations using the Z method. In addition, for Re, we combine QMD simulations with total free energy calculations to obtain its phase diagram. Our results indicate that Re, which generally assumes a hexagonal close-packed (hcp) structure, melts from a face-centered cubic (fcc) structure in the pressure range 20–240 GPa. We conclude that the recent DAC data on Re to 50 GPa in fact encompass both the true melting curve and the low-slope hcp-fcc phase boundary above a triple point at (20 GPa, 4240 K). A linear fit to the Re diamond anvil cell (DAC) data then results in a slope that is 2.3 times smaller than that of the actual melting curve. The phase diagram of Re is topologically equivalent to that of Pt calculated by us earlier on. Regularities in the melting curves of Re, Os, and five other 3rd-row transition metals (Ta, W, Ir, Pt, Au) form the 3rd-row transition metal melting systematics. We demonstrate how this systematics can be used to estimate the currently unknown melting curve of the eighth 3rd-row transition metal Hf.
Abstract not provided
Refractory metals and metal alloys analyzed regarding electron work function and threshold temperature for surface ionization in all-metal guard ring diode with directly heated wire
Metal−organic frameworks (MOFs) that contain coordinatively unsaturated open metal sites (OMSs) provide strong host− guest interactions, making them promising sorbents for low-concentration gas adsorption applications such as direct air capture and atmospheric water harvesting. However, accurately modeling host−guest interactions involving OMSs remains challenging for classical force fields (FFs) based on the 12−6 Lennard−Jones (LJ) potential, as the polarization effect of the guest molecule induced by the positively charged OMS is not considered. Here, we introduce an FF based on the 12−6−4 LJ potential, which incorporates charge−induced dipole interactions and is parametrized against a diverse set of host−guest potential energy surfaces (PESs) obtained from density functional theory (DFT). The resulting FF, trained on a generic trimetallic cluster, performs well in both host−guest binding energetics and gas adsorption isotherms across different OMS-containing MOFs, including MOF-74 series and Cu-BTC. These results highlight the excellent transferability of our approach and its potential to enhance the accuracy and robustness of high-throughput MOF discovery workflows, particularly for gas adsorption and separation in large and diverse MOF databases.
Correction to "Predicting a key catalyst-performance descriptor for supported metal nanoparticles: metal chemical potential” by Zhongtian Mao and Charles T. Campbell, ACS Catal. 2021, 11, 8284–8291.
Ligand-to-metal charge transfer (LMCT) can bring about the separation of photogenerated charges. Here we calculate the electronic structures of metal–organic frameworks (MOFs) having the UiO-66 architecture and M 6 O 4 (OH) 4 inorganometallic nodes with M = Zr, Hf, Th, Ti, U, or Ce. We find that LMCT is favorable only in the Ce case, where it is promoted by the low-lying empty 4f orbitals of Ce 4+ . We therefore propose that incorporating Ce 4+ into the node is an effective way to facilitate LMCT in a MOF. In addition, we show that by functionalizing the linker, it should be possible to engineer the electronic structure of the Ce-MOF for a desired reaction (e.g., water splitting) while preserving favorable LMCT. Furthermore, we also find that linker functionalization with electron donating or withdrawing groups allows tuning of the LMCT energy, and increasing the number of functional groups on each linker enhances the tuning; these findings are encouraging for applying Ce-MOFs for visible-response photocatalytic water splitting.
Transport characteristics of ultrathin SrRuO{sub 3} films, deposited epitaxially on TiO{sub 2}-terminated SrTiO{sub 3} (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variable range hopping model, indicating a strongly localized state. Magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction.
Component design for refractory metal-alkali metal corrosion test system
Abstract Bandgap engineering plays a critical role in optimizing the electrical, optical and (photo)‐electrochemical applications of semiconductors. Alloying has been a historically successful way of tuning bandgaps by making solid solutions of two isovalent semiconductors. In this work, a novel form of bandgap engineering involving alloying non‐isovalent cations in a 2D transition metal dichalcogenide (TMDC) is presented. By alloying semiconducting MoSe 2 with metallic NbSe 2 , two structural phases of Mo 0.5 Nb 0.5 Se 2 , the 1T and 2H phases, are produced each with emergent electronic structure. At room temperature, it is observed that the 1T and 2H phases are semiconducting and metallic, respectively. For the 1T structure, scanning tunneling microscopy/spectroscopy (STM/STS) is used to measure band gaps in the range of 0.42–0.58 at 77 K. Electron diffraction patterns of the 1T structure obtained at room temperature show the presence of a nearly commensurate charge density wave (NCCDW) phase with periodic lattice distortions that result in an uncommon 4 × 4 supercell, rotated approximately 4° from the lattice. Density‐functional‐theory calculations confirm that local distortions, such as those in a NCCDW, can open up a band gap in 1T ‐Mo 0.5 Nb 0.5 Se 2 , but not in the 2H phase. This work expands the boundaries of alloy‐based bandgap engineering by introducing a novel technique that facilitates CDW phases through alloying.
The field of plasmonics has grown to impact a diverse set of scientific disciplines ranging from quantum optics and photovoltaics to metamaterials and medicine. Plasmonics research has traditionally focused on noble metals; however, any material with a sufficiently high carrier density can support surface plasmon modes. Recently, researchers have made great gains in the synthetic (both intrinsic and extrinsic) control over the morphology and doping of nanoscale oxides, pnictides, sulfides, and selenides. These synthetic advances have, collectively, blossomed into a new, emerging class of plasmonic metal chalcogenides that complement traditional metallic materials. Chalcogenide and oxide nanostructures expand plasmonic properties into new spectral domains and also provide a rich suite of chemical controls available to manipulate plasmons, such as particle doping, shape, and composition. As a result, new opportunities in plasmonic chalcogenide nanomaterials are highlighted in this article, showing how they may be used to fundamentally tune the interaction and localization of electromagnetic fields on semiconductor surfaces in a way that enables new horizons in basic research and energy-relevant applications.
A redox-active metal-organic composite material shows improved and selective O-2 adsorption over N-2 with respect to individual components (MIL-101 and ferrocene). The O-2 sensitivity of the composite material arises due to the formation of maghemite nanoparticles with the pore of the metal-organic framework material.