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At least 811 records · Page 45

Plasmonic Terahertz Devices and Sensors Based on Carbon Electronics

Tunable terahertz (THz) photonic devices are imperative in a wide range of applications ranging from THz signal modulation to molecular sensing. One of the currently prevailing methods is based on arrays of metallic or dielectric resonators integrated with functional materials in response to an external stimulus, in which for the purpose of sensing the external stimuli may introduce inadvertent undesirable effects into the target samples to be measured. Here we developed an alternative approach by postprocessing nanothickness macro-assembled graphene (nMAG) films with widely tunable THz conductivity, enabling versatile solid-state THz devices and sensors, showing multifunctional nMAG-based applications. The THz conductivities of free-standing nMAGs showed a broad range from 1.2 x 10 3 S/m in reduced graphene oxide before annealing to 4.0 x 10 6 S/m in a nMAG film annealed at 2800 °C. We fabricated nMAG/dielectric/metal and nMAG/dielectric/nMAG THz Salisbury absorbers with broad reflectance ranging from 0% to 80%. The highly conductive nMAG films enabled THz metasurfaces for sensing applications. Taking advantage of the resonant field enhancement arising from the plasmonic metasurface structures and the strong interactions between analyte molecules and nMAG films, we have successfully detected diphenylamine with a limit of detection of 4.2 pg. Those wafer-scale nMAG films present promising potential in high-performance THz electronics, photonics, and sensors.

36 MATERIALS SCIENCE↗

Plasmonic Three-Dimensional Transparent Conductor Based on Al-Doped Zinc Oxide-Coated Nanostructured Glass Using Atomic Layer Deposition

Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for the design of plasmonic 3D transparent conductors. Transformation of the non-conducting 3D structure to a conducting 3D network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electronbeam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO coated glass surface along with the in-plane dimensions of the deposited AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to that of the untextured two-dimensional AZO coated glass substrates. In addition, transmittance measurements of the glass samples coated with various AZO thicknesses showed preservation of the highly transparent nature of each sample, while the AuNPs demonstrated enhanced light scattering as well as light-trapping capability.

36 MATERIALS SCIENCE↗

Surface-Plasmon-Mediated Gradient Force Enhancement and Mechanical State Transitions of Graphene Sheets

Graphene, a two-dimensional material possessing extraordinary properties in electronics as well as mechanics, provides a great platform for various optoelectronic and opto-mechanical devices. Here in this article, we theoretically study the optical gradient force arising from the coupling of surface plasmon modes on parallel graphene sheets, which can be several orders stronger than that between regular dielectric waveguides. Furthermore, with an energy functional optimization model, possible force-induced deformation of graphene sheets is calculated. We show that the significantly enhanced optical gradient force may lead to mechanical state transitions of graphene sheets, which are accompanied by abrupt changes in reflection and transmission spectra of the system. Our demonstrations illustrate the potential for a broader graphene-related applications such as force sensors and actuators.

36 MATERIALS SCIENCE↗

Single-Layer Plasmonic Metasurface Half-Wave Plates with Wavelength-Independent Polarization Conversion Angle

Manipulation of polarization state is of great fundamental importance and plays a crucial role in modern photonic applications such as optical communication, imaging, and sensing. Metamaterials and metasurfaces have attracted increasing interest in this area because they facilitate designer optical response through engineering the composite subwavelength structures. In this paper, we propose a general methods of designing half-wave plate and demonstrate in the near-infrared wavelength range an optically thin plasmonic metasurface half-wave plates that rotate the polarization direction of the linearly polarized incident light with a high degree of linear polarization. Finally, the half-wave plate functionality is realized through arranging the orientation of the nanoantennas to form an appropriate spatial distribution profile, which behave exactly as in classical half-wave plates but over in a wavelength-independent way.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering

Carrier diffusion is of paramount importance in many semiconductor devices, such as solar cells, photodetectors, and power electronics. Structural defects prevent such devices from reaching their full performance potential. Although a large carrier diffusion length indicates high material quality, it also implies increased carrier depletion by an individual extended defect (for instance, a dislocation) and obscures the spatial resolution of neighboring defects using optical techniques. For commonly utilized photoluminescence (PL) imaging, the spatial resolution is dictated by the diffusion length rather than by the laser spot size, no matter the spot is at or below the diffraction limit. We show how Raman imaging of the LO phonon-plasmon-coupled mode can be used to recover the intrinsic spatial resolution of the optical system, and we demonstrate the effectiveness of the technique by imaging defects in GaAs with diffraction-limited optics, achieving a 10-fold improvement in resolution. Furthermore, by combining Raman and PL imaging, we can independently and simultaneously determine the spatial dependence of the electron density, hole density, radiative recombination rate, and non-radiative recombination rate near a dislocation-like defect, which has not been possible using other techniques.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A High-Power Broadband Terahertz Source Enabled by Three-Dimensional Light Confinement in a Plasmonic Nanocavity

The scope and potential uses of time-domain terahertz imaging and spectroscopy are mainly limited by the low optical-to-terahertz conversion efficiency of photoconductive terahertz sources. State-of-theart photoconductive sources utilize short-carrier-lifetime semiconductors to recombine carriers that cannot contribute to efficient terahertz generation and cause additional thermal dissipation. Here, we present a novel photoconductive terahertz source that offers a significantly higher efficiency compared with terahertz sources fabricated on short-carrier-lifetime substrates. The key innovative feature of this source is the tight three-dimensional confinement of the optical pump beam around the terahertz nanoantennas that are used as radiating elements. This is achieved by means of a nanocavity formed by plasmonic structures and a distributed Bragg reflector. Consequently, almost all of the photo-generated carriers can be routed to the terahertz nanoantennas within a sub-picosecond time-scale. This results in a very strong, ultrafast current that drives the nanoantennas to produce broadband terahertz radiation. We experimentally demonstrate that this terahertz source can generate 4 mW pulsed terahertz radiation under an optical pump power of 720 mW over the 0.1–4 THz frequency range. This is the highest reported power level for terahertz radiation from a photoconductive terahertz source, representing more than an order of magnitude of enhancement in the optical-to-terahertz conversion efficiency compared with state-of-the-art photoconductive terahertz sources fabricated on shortcarrier- lifetime substrates.

42 ENGINEERING↗

Plasmonic Au nanoparticles embedding enhances the activity and stability of CdS for photocatalytic hydrogen evolution

A composite photocatalyst of embedding plasmonic Au nanoparticle into CdS (Au@CdS) was prepared with a cysteine-assisted hydrothermal approach. This structure could take fully advantage of electromagnetic fields at the surface of the Au nanoparticles under visible light illumination. The photocatalytic hydrogen evolution activity of CdS could be significantly improved. Without the use of any other metal or metal oxide as cocatalysts, the quantum efficiency can reach 12.1 % over 0.5%Au@CdS at 420 nm. When using 0.1%Pt as a cocatalyst, the quantum efficiency of 0.5%Au@CdS can be further improved to 45.6%. This efficiency can be maintained more than 100 h in the test 12 days, exhibiting a relatively high stability. Photoluminescence (PL) characterization shows that the formation rate of photoexcited e-/h+ was dramatically increased when Au nanoparticles were embedded into CdS. Time-resolved PL measurement shows that Au@CdS also has a longer luminescence lifetime than that of CdS, reflecting that the photoexcited electrons in Au@CdS be with much longer lifetime to reduce H+ forming H2. All these enhancements can be attributed to the effective energy transfer between the Au surface and CdS due to the well matched composite nanostructure. Dr. Xiang Wang gratefully acknowledges the US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences, Chemical Sciences, Geosciences, and Biosciences Division for the support of this work.

Au nanoparticles↗

Enhanced single photon emission from positioned InP/GaInP quantum dots coupled to a confined Tamm-plasmon mode

We report on the enhancement of the spontaneous emission in the visible red spectral range from site-controlled InP/GaInP quantum dots by resonant coupling to Tamm-plasmon modes confined beneath gold disks in a hybrid metal/semiconductor structure. The enhancement of the emission intensity is confirmed by spatially resolved micro-photoluminescence area scans and temperature dependent measurements. Single photon emission from our coupled system is verified via second order autocorrelation measurements. We observe bright single quantum dot emission of up to ∼173 000 detected photons per second at a repetition rate of the excitation source of 82 MHz, and calculate an extraction efficiency of our device as high as 7%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A parity-time symmetric coherent plasmonic absorber-amplifier

Non-Hermitian parity-time (PT)-symmetric optical potentials have led to a new class of unidirectional photonic components based on the spatially symmetric and balanced inclusion of loss and gain. While most proposed and implemented PT-symmetric optical devices have wavelength-scale dimensions, no physical constraints preclude development of subwavelength PT-symmetric components. We theoretically demonstrate a nanoscale PT-symmetric, all-optical plasmonic modulator capable of phase-controlled amplification and directional absorption. The modulator consists of two deeply subwavelength channels composed of either gain or loss dielectric material, embedded in a metallic cladding. When illuminating on-resonance by two counter-propagating plane waves, the aperture's total output can be modulated by changing the phase offset between the two waves. Modulation depths are greater than 10 dB, with output power varying from less than one half of the incident power to more than six times amplification. Off-resonance, the aperture possesses strong phase-controlled directionality with the output from one side varying from perfect absorption to strong scattering and transmission. The device design provides a platform for nanoscale all-optical modulators with gain while potentially enabling coherent perfect absorption and lasing in a single, compact structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spectra of surface plasmon polariton enhanced electroluminescence from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes

Narrow band-pass filters have been used to measure the spectral distribution of electroluminescent photons with energies between 1.8 eV and 3.0 eV from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes with anodic Al{sub 2}O{sub 3} thicknesses between 12 nm and 18 nm. Electroforming of metal-insulator-metal (MIM) diodes is a non-destructive dielectric breakdown that results in a conducting channel in the insulator and changes the initial high resistance of the MIM diode to a low resistance state. It is a critical step in the development of resistive-switching memories that utilize MIM diodes as the active element. Electroforming of Al-Al{sub 2}O{sub 3}-Ag diodes in vacuum results in voltage-controlled negative resistance (VCNR) in the current-voltage (I-V) characteristics. Electroluminescence (EL) and electron emission into vacuum (EM) develop simultaneously with the current increase that results in VCNR in the I-V characteristics. EL is due to recombination of electrons injected at the Al-Al{sub 2}O{sub 3} interface with radiative defect centers in Al{sub 2}O{sub 3}. Measurements of EL photons between 1.8 eV and 3.0 eV using a wide band-pass filter showed that EL intensity is exponentially dependent on Al{sub 2}O{sub 3} thickness for Al-Al{sub 2}O{sub 3}-Ag diodes between 12 nm and 20 nm thick. Enhanced El intensity in the thinnest diodes is attributed to an increase in the spontaneous emission rate of recombination centers due to high electromagnetic fields generated in Al{sub 2}O{sub 3} when EL photons interact with electrons in Ag or Al to form surface plasmon polaritons at the Al{sub 2}O{sub 3}-Ag or Al{sub 2}O{sub 3}-Al interface. El intensity is a maximum at 2.0–2.2 eV for Al-Al{sub 2}O{sub 3}-Ag diodes with Al{sub 2}O{sub 3} thicknesses between 12 nm and 18 nm. EL in diodes with 12 nm or 14 nm of Al{sub 2}O{sub 3} is enhanced by factors of 8–10 over EL from a diode with 18 nm of Al{sub 2}O{sub 3}. The extent of EL enhancement in the thinnest diodes can vary significantly between samples. A narrow band of recombination centers was found in one Al-Al{sub 2}O{sub 3}-Ag diode with 12 nm of Al{sub 2}O{sub 3}; it had EL intensity 100 times greater at 2.15 eV than the diode with 18 nm of Al{sub 2}O{sub 3}. EL intensity for photons with energies greater than 2.6 eV is nearly the same for all diodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Surface plasmons at the Brillouin zone boundary of an oblique lattice

In periodic systems of low-symmetry, the Bragg condition for the complete interference of waves along the contour of the Brillouin zone (BZ) boundary is not generally satisfied. As a result, band-gaps do not necessarily occur at this boundary. This letter demonstrates this experimentally by recording the iso-frequency contours for surface plasmon polaritons (SPPs) supported on a diffraction grating with an underlying 2D oblique Bravias lattice. It is shown that these contours do not intersect the BZ boundary perpendicularly, as the symmetry operations of the lattice place no conditions on the surface wave interference at this boundary.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Performance analysis of higher mode spoof surface plasmon polariton for terahertz sensing

We investigated the spoof surface plasmon polaritons (SSPPs) on 1D grooved metal surface for terahertz sensing of refractive index of the filling analyte through a prism-coupling attenuated total reflection setup. From the dispersion relation analysis and the finite element method-based simulation, we revealed that the dispersion curve of SSPP got suppressed as the filling refractive index increased, which cause the coupling resonance frequency redshifting in the reflection spectrum. The simulated results for testing various refractive indexes demonstrated that the incident angle of terahertz radiation has a great effect on the performance of sensing. Smaller incident angle will result in a higher sensitive sensing with a narrower detection range. In the meanwhile, the higher order mode SSPP-based sensing has a higher sensitivity with a narrower detection range. The maximum sensitivity is 2.57 THz/RIU for the second-order mode sensing at 45° internal incident angle. The proposed SSPP-based method has great potential for high sensitive terahertz sensing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Observation of a hole-size-dependent energy shift of the surface-plasmon resonance in Ni antidot thin films

A combined experimental and theoretical study of the magneto-optic properties of a series of nickel antidot thin films is presented. The hole diameter varies from 869 down to 636 nm, while the lattice periodicity is fixed at 920 nm. This results in an overall increase of the polar Kerr rotation with decreasing hole diameter due to the increasing surface coverage with nickel. In addition, at photon energies of 2.7 and 3.3 eV, where surface-plasmon excitations are expected, we observe distinct features in the polar Kerr rotation not present in continuous nickel films. The spectral position of the peaks exhibits a red shift with decreasing hole size. This is explained within the context of an effective medium theory by a change in the effective dielectric function of the Ni thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Large area fabrication of plasmonic nanoparticle grating structure by conventional scanning electron microscope

Plasmonic nanoparticle grating (PNG) structure of different periods has been fabricated by electron beam lithography using silver halide based transmission electron microscope film as a substrate. Conventional scanning electron microscope is used as a fabrication tool for electron beam lithography. Optical microscope and energy dispersive spectroscopy (EDS) have been used for its morphological and elemental characterization. Optical characterization is performed by UV-Vis absorption spectroscopic technique.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Efficient surface plasmon amplification in gain-assisted silver nanotubes and associated dimers

SPASER (surface plasmon amplification by stimulated emission of radiation) properties in active SiO{sub 2}–Ag nanotubes and associated dimers have been investigated by using the scattering theory and the finite element method. In the active Ag nanotube, as the gain coefficient of the core increases to a critical value, a super-resonance occurs. The SPASER phenomenon also can be found in the active Ag nanotube dimer. The strong couplings between two nanotubes lead to larger gain threshold for the active Ag nanotube dimer compared with the active Ag nanotube. At the super-resonance, the maximal surface enhanced Raman scattering factor at the “hot spot” in the active Ag nanotube dimer can achieve about 8 × 10{sup 18}, which is large enough for single molecule detection. Furthermore, with increasing the separation between two Ag nanotubes, the gain threshold value for the super-resonance of the active Ag nanotube dimer decreases, while the corresponding super-resonance wavelength increases first and then decreases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620 nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%–53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Plasmon enhanced fluorescence studies from aligned gold nanorod arrays modified with SiO{sub 2} spacer layers

Here, we demonstrate that quasi self-standing Au nanorod arrays prepared with plasma polymerisation deposited SiO{sub 2} dielectric spacers support surface enhanced fluorescence (SEF) while maintaining high signal reproducibility. We show that it is possible to find a balance between enhanced radiative and non-radiative decay rates at which the fluorescent intensity is maximized. The SEF signal optimised with a 30 nm spacer layer thickness showed a 3.5-fold enhancement with a signal variance of <15% thereby keeping the integrity of the nanorod array. We also demonstrate the decreased importance of obtaining resonance conditions when localized surface plasmon resonance is positioned within the spectral region of Au interband transitions. Procedures for further increasing the SEF enhancement factor are also discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗