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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Time of flight spectrometer for background-free positron annihilation induced Auger electron spectroscopy

We describe a novel spectrometer designed for positron annihilation induced Auger electron spectroscopy employing a time-of-flight spectrometer. The spectrometer’s new configuration enables us to implant monoenergetic positrons with kinetic energies as low as 1.5 eV on the sample while simultaneously allowing for the detection of electrons emitted from the sample surface at kinetic energies ranging from ∼500 eV to 0 eV. The spectrometer’s unique characteristics made it possible to perform (a) first experiments demonstrating the direct transition of a positron from an unbound scattering state to a bound surface state and (b) the first experiments demonstrating that Auger electron spectra can be obtained down to 0 eV without the beam induced secondary electron background obscuring the low energy part of the spectra. Data are presented which show alternative means of estimating positron surface state binding energy and background-free Auger spectra.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si

The redistribution of hydrogen during solid phase epitaxial regrowth (SPER) of preamorphized silicon has been experimentally investigated, modeled, and simulated for different H concentrations and temperatures. H was introduced by H implantation and/or infiltration from the sample surface during partial thermal anneals in air in the 520–620 °C temperature range. We characterized the time evolution of the H redistribution by secondary ion mass spectrometry and time resolved reflectivity. The good agreement between all experimental data and the simulations by means of full rate equation numerical calculations allows the quantitative assessment of all the phenomena involved: in-diffusion from annealing atmosphere and the H effect on the SPER rate. We describe the temperature dependence of microscopic segregation of H at the amorphous/crystal (a-c) interface. Only a fraction of H atoms pushed by the a-c interface can be incorporated into the crystal bulk. We propose an energetic scheme of H redistribution in amorphous Si. The segregation of H at the a-c interface is also considered for (110) and (111) orientated substrates. Our description can also be applied to other material systems in which redistribution of impurities during a solid-solid phase transition occurs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Evaluation of band offset at amorphous-Si/BaSi{sub 2} interfaces by hard x-ray photoelectron spectroscopy

The 730 nm-thick undoped BaSi{sub 2} films capped with 5 nm-thick amorphous Si (a-Si) intended for solar cell applications were grown on Si(111) by molecular beam epitaxy. The valence band (VB) offset at the interface between the BaSi{sub 2} and the a-Si was measured by hard x-ray photoelectron spectroscopy to understand the carrier transport properties by the determination of the band offset at this heterointerface. We performed the depth-analysis by varying the take-off angle of photoelectrons as 15°, 30°, and 90° with respect to the sample surface to obtain the VB spectra of the BaSi{sub 2} and the a-Si separately. It was found that the barrier height of the a-Si for holes in the BaSi{sub 2} is approximately −0.2 eV, whereas the barrier height for electrons is approximately 0.6 eV. This result means that the holes generated in the BaSi{sub 2} layer under solar radiation could be selectively extracted through the a-Si/BaSi{sub 2} interface, promoting the carrier separation in the BaSi{sub 2} layer. We therefore conclude that the a-Si/BaSi{sub 2} interface is beneficial for BaSi{sub 2} solar cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Silver migration and trapping in ion implanted ZnO single crystals

Potentially, group-Ib elements (Cu, Ag, and Au) incorporated on Zn sites can be used for p-type doping of ZnO, and in the present paper, we use ion implantation to introduce Ag atoms in wurtzite ZnO single crystals. Monitoring the Li behavior, being a residual impurity in the crystals, as a tracer, we demonstrate that Zn interstitials assist the Ag diffusion and lead to Ag pile-up behind the implanted region after annealing above 800 °C. At even higher temperatures, a pronounced Ag loss from the sample surface occurs and concurrently the Ag atoms exhibit a trap-limited diffusion into the crystal bulk with an activation energy of ∼2.6 eV. The dominant traps are most likely Zn vacancies and substitutional Li atoms, yielding substitutional Ag atoms. In addition, formation of an anomalous multipeak Ag distribution in the implanted near-surface region after annealing can be attributed to local implantation-induced stoichiometry disturbances leading to trapping of the Ag atoms by O and Zn vacancies in the vicinity of the surface and in the end-of-range region, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Investigation of proton damage in III-V semiconductors by optical spectroscopy

We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase in the intensity of longitudinal optical phonons and a decrease in the luminescence were observed. We associate these changes with the creation of defects in the damaged region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with stopping and range of ions in matter simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20% for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation, we propose an increase in 40% in the electronic stopping power for InGaP.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment

Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in terms of controlling the polarization anisotropy by altering the shape of the processed sub-micrometer mesa structures. Photoluminescence has been measured from exemplary single quantum dashes emitting around 1.3 and 1.55 μm and placed inside rectangular mesas of various orientation, asymmetry, and sizes. The detected degree of linear polarization of bright exciton emission ranges from −0.1 to ca. 0.55, compared to 0.25 for dashes in unaltered or isotropic in-plane dielectric surrounding. These results are interpreted by numerical simulations using an emitter coupled with a single optical mode in such a mesa and outgoing in the direction normal to the sample surface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>10{sup 5 }s), good endurance (>10{sup 6} cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Probing thermal conductivity of subsurface, amorphous layers in irradiated diamond

In this study, we report on the thermal conductivity of amorphous carbon generated in diamond via nitrogen ion implantation (N 3+ at 16.5 MeV). Here, transmission electron microscopy techniques demonstrate amorphous band formation about the longitudinal projected range, localized approximately 7 μm beneath the sample surface. While high-frequency time-domain thermoreflectance measurements provide insight into the thermal properties of the near-surface preceding the longitudinal projected range depth, a complimentary technique, steady-state thermoreflectance, is used to probe the thermal conductivity at depths which could not otherwise be resolved. Through measurements with a series of focusing objective lenses for the laser spot size, we find the thermal conductivity of the amorphous region to be approximately 1.4 W m –1 K –1 , which is comparable to that measured for amorphous carbon films fabricated through other techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Apparatus for skidding sensitivity testing of energetic materials

A remote-operated apparatus for testing the detonation sensitivity of energetic materials is detailed. Using an air ram and rotating disk, the normal force and transverse velocity of the impact plane are controlled independently, enabling the exploration of varying impact conditions over a wide parameter space. A microcontroller local to the apparatus is used to automate apparatus operation and ensure temporal alignment of the impacting ram head with the rotating disk. Calculation of the firing parameters and issuing of operational commands are handled by a remote computer and relayed to the local microcontoller for execution at the hardware level. Finally, impact forces are taken from fast strain measurements obtained from gauges incorporated into the ram head. Infrared imaging of explosive samples provides insight to the peak thermal temperatures experienced at the sample surface during the impact event.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Using silicon-vacancy centers in diamond to probe the full strain tensor

An ensemble of silicon vacancy (SiV−) centers in diamond is probed using two-pulse correlation spectroscopy and multidimensional coherent spectroscopy. Two main distinct families of SiV− centers are identified, and these families are paired with two orientation groups by comparing spectra from different linear polarizations of the incident laser. By tracking the peak centers in the measured spectra, the full diamond strain tensor is calculated local to the laser spot. Measurements are made at multiple points on the sample surface, and variations in the strain tensor are observed.

Bates, Kelsey M. (ORCID:0000000324961124)↗
DOE OSTI2022

Direct current magnetic Hall probe technique for measurement of field penetration in thin film superconductors for superconducting radio frequency resonators

Superconducting Radio Frequency (SRF) cavities used in particle accelerators are typically formed from or coated with superconducting materials. Currently, high purity niobium is the material of choice for SRF cavities that have been optimized to operate near their theoretical field limits. This brings about the need for significant R & D efforts to develop next generation superconducting materials that could outperform Nb and keep up with the demands of new accelerator facilities. To achieve high quality factors and accelerating gradients, the cavity material should be able to remain in the superconducting Meissner state under a high RF magnetic field without penetration of quantized magnetic vortices through the cavity wall. Therefore, the magnetic field at which vortices penetrate a superconductor is one of the key parameters of merit of SRF cavities. Techniques to measure the onset of magnetic field penetration on thin film samples need to be developed to mitigate the issues with the conventional magnetometry measurements that are strongly influenced by the film orientation and shape and edge effects. In this work, we report the development of an experimental setup to measure the field of full flux penetration through films and multi-layered superconductors. Our system combines a small superconducting solenoid that can generate a magnetic field of up to 500 mT at the sample surface and three Hall probes to detect the full flux penetration through the superconductor. We report this setup can be used to study alternative materials that could potentially outperform niobium, as well as superconductor–insulator–superconductor (SIS) multilayer coatings on niobium.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Temperature effects on the nanoscale thermoelastic response of a SiO2 membrane

We crossed two femtosecond extreme ultraviolet (EUV) pulses on a 100 nm thick amorphous membrane of SiO2, generating transient gratings (TGs) of light intensity with 84 nm spatial periodicity. The EUV TG excitation gave rise to the efficient generation of Lamb waves (LWs) and of a temperature grating, whose dynamics was studied at two different initial sample temperatures, 50 and 300 K. The short penetration depth of the EUV excitation pulses turned into a strong non-uniformity in the actual temperature as a function of the depth from the sample surface. At the lowest temperature, the LW frequencies presented a sizable shift in time due to the thermal equilibration along the membrane thickness. The analysis of the EUV TG waveforms allowed us to determine the decay time of the thermal grating and the sound attenuation coefficient, both found in reasonable agreement with the literature. The results show how EUV TG can provide information of non-equilibrium thermoelastic dynamics in thin membranes transparent to optical radiation.

Materials Science↗
DOE OSTI2015

Fabrication of a multilevel THz Fresnel lens by femtosecond laser ablation

The possibility of fabricating a silicon diffractive fourlevel THz Fresnel lens by laser ablation is studied. For a microrelief to be formed on the sample surface, use is made of a femtosecond Yb : YAG laser with a high pulse repetition rate (f = 200 kHz). Characteristics of the diffractive optical element are investigated in the beam of a 141-mm free-electron laser. The measured diffraction efficiency of the lens is in good agreement with the theoretical estimate. (laser technologies)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Spin-resolved photoemission study of epitaxially grown MoSe 2 and WSe 2 thin films

Few-layer thick MoSe 2 and WSe 2 possess non-trivial spin textures with sizable spin splitting due to the inversion symmetry breaking embedded in the crystal structure and strong spin–orbit coupling. Here, we report a spin-resolved photoemission study of MoSe 2 and WSe 2 thin film samples epitaxially grown on a bilayer graphene substrate. Furthermore, we only found spin polarization in the single- and trilayer samples—not in the bilayer sample—mostly along the out-of-plane direction of the sample surface. The measured spin polarization is found to be strongly dependent on the light polarization as well as the measurement geometry, which reveals intricate coupling between the spin and orbital degrees of freedom in this class of material.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Evidence of blocking effects on 3-keV Ne{sup 7+} ions guided through nanocapillaries in polycarbonate

We studied the dynamic properties of ion guiding through nanocapillaries etched in insulating polycarbonate (PC). Capillaries with diameters of 95 and 165 nm and a length of 10 {mu}m were used. In a further sample, the capillaries had a diameter of 175 nm and a length of 30 {mu}m. A few additional measurements were made using capillaries in polyethylene terephthalate (PET). The temporal evolution of the intensity and the angular distribution of the transmitted ions were studied by measuring transmission profiles as a function of the charge deposited on the sample surface. The tilt angle of the capillary axis was varied from 0 deg. to 5 deg. The mean emission angle of the transmission profiles exhibit pronounced oscillations, similarly as in previous measurements using PET. However, for PC, nearly an order of magnitude more charge needs to be inserted into the capillaries to accomplish the oscillations. In contrast to PET, with PC, we observed a strong decrease of the profile intensities with irradiation time. This observation provides evidence of blocking effects on the ions, which are likely to be due to a repulsive field produced by significant charge deposition inside the PC capillaries.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2018

Dissociation dynamics of the water dication following one-photon double ionization. I. Theory

The measurement of the triple differential cross section in the body frame for double photoionization of a molecule can be made in principle by detecting the ionic fragments and the two photoelectrons in coincidence - but only if the dynamics and geometry of dissociation of the doubly charged molecular ion are known. A classical trajectory study of the nine lowest states of the water dication is presented using high quality ab initio potential-energy surfaces. Sampling from a semiclassical initial distribution of positions and momenta is used to approximate ionization from the Frank-Condon region of the ground vibrational state of neutral H 2 O. Excellent agreement in comparison with preliminary experimental momentum imaging measurements of double photoionization of water show that eight dication states can be unambiguously identified in the experiment with the aid of theory. In conclusion, the theoretical trajectory results allow body frame measurements of double photoionization to yield all eight states even though the usual assumption of direct dissociation, the "axial recoil" approximation, breaks down for three of the dication electronic states seen in the experiment.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Precision Measurement of the Microwave Dielectric Loss of Sapphire in the Quantum Regime with Parts-per-Billion Sensitivity

Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes. Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of 100 parts per billion but because these inferences are drawn from fully fabricated devices with many loss channels, these experiments do not definitely implicate or exonerate the dielectric. To resolve this ambiguity, we devise a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of 5 ×10 –9 . The method, which we call the dielectric dipper, involves the in situ insertion of a dielectric sample into a high-quality microwave cavity mode. Smoothly varying the participation of the sample in the cavity mode enables a differential measurement of the dielectric loss tangent of the sample. The dielectric dipper can probe the low-power behavior of dielectrics at cryogenic temperatures and does so without the need for any lithographic process, enabling controlled comparisons of substrate materials and processing techniques. We demonstrate the method with measurements of sapphire grown by edge-defined film-fed growth (EFG) in comparison to high-grade sapphire grown by the heat-exchanger method (HEMEX). For EFG sapphire, we infer a bulk loss tangent of 63⁢(8) ×10 –9 and a substrate-air interface loss tangent of 15⁢(3) ×10 –4 (assuming a sample surface thickness of 3 nm). For a typical transmon, this bulk loss tangent would limit device quality factors to Q ≲20 ×10 6 , suggesting that bulk loss is likely the dominant loss mechanism in the longest-lived transmons on sapphire. We also demonstrate this method on HEMEX sapphire and bound its bulk loss tangent to be less than 19⁢(6) ×10 –9 . As this bound is about 3 times smaller than the bulk loss tangent of EFG sapphire, the use of HEMEX sapphire as a substrate would lift the bulk dielectric coherence limit of a typical transmon qubit to several milliseconds.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes

Charge carrier transport in thin hydrogen (H)-terminated Si(001) sheets is explored via a four-probe device fabricated on silicon-on-insulator (SOI) using the bulk host Si as a back gate. The method enables electrical measurements without the need to contact the sample surface proper. Furthermore, sheet conductance measurements as a function of back-gate voltage demonstrate the presence of acceptor- and donorlike surface states. These states are distributed throughout the gap and can be removed or transformed with low-temperature annealing. The density of donorlike states is just under 10 12 cm -2 eV -1 and 3 times higher than that of the acceptorlike states. We discuss the possible origins of these states. The conductance through the surface layer is too small to measure.

2-dimensional systems↗