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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Studies of the radiation tolerance and electrical behavior of gallium nitride (GaN) based devices are important for the next generation of high-power and high-voltage electronics that may be subjected to harsh environments such as nuclear reactor and fusion facilities, particle accelerators, and post-denotation environments. Here, in this work, we study the behavior of Ga-polar and N-polar GaN Schottky diodes before and after exposure to fast and thermal + fast neutrons. Temperature-dependent current–voltage (I–V) and circular transmission line method (CTLM) measurements were used to study the electrical characteristics. A strong reduction in reverse leakage current and an increase in differential resistance in forward bias were observed after neutron irradiation. Thermionic emission (TE), Frenkel–Poole (FP) emission, and Fowler–Nordheim (FN) tunneling models were used to explain the forward and reverse I–V characteristics pre- and post-irradiation. The study confirms that Ga-polar and N-polar GaN Schottky diodes exhibit different electrical responses to fast and thermal neutron irradiations. The reverse bias characteristics of N-polar diodes are less affected after the fast neutron irradiation compared to Ga-polar diodes, while in the forward bias region, the electrical behavior after fast and thermal neutron irradiations is similar in Ga-polar and N-polar diodes. The results indicate that the role of orientation should be considered in the design of GaN-based radiation-tolerant electronics.

42 ENGINEERING↗
DOE OSTI2023

Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs

Hole injection through V-defect sidewalls into all quantum wells (QWs) of long wavelength GaN light emitting diodes had previously been proposed as means to increase efficiency of these devices. In this work, we directly tested the viability of this injection mechanism by electroluminescence and time-resolved photoluminescence measurements on a device in which QW furthest away from the p-side of the structure was deeper, thus serving as an optical detector for presence of injected electron–hole pairs. Emission from the detector well confirmed that, indeed, the holes were injected into this QW, which could only take place through the {$10\bar{1}1$} V-defect sidewalls. Unlike direct interwell transport by thermionic emission, this transport mechanism allows populating all QWs of a multiple QW structure despite the high potential barriers in the long wavelength InGaN/GaN QWs.

Atomic force microscopy↗
DOE OSTI2015

Composition and work function relationship in Os–Ru–W ternary alloys

Os–Ru thin films with varying concentrations of W were sputter deposited in order to investigate their structure–property relationships. The films were analyzed with x-ray diffraction to investigate their crystal structures, and a Kelvin probe to investigate their work functions. An Os–Ru–W film with ∼30 at. % W yielded a work function maximum of approximately 5.38 eV. These results align well with other studies that found work function minima from thermionic emission data on M-type cathodes with varying amounts of W in the coatings. Furthermore, the results are consistent with other work explaining energy-level alignment and charge transfer of molecules on metal oxides. This may shed light on the mechanism behind the “anomalous effect” first reported by Zalm et al., whereby a high work function coating results in a low work function for emitting cathode surfaces. An important implication of this work is the potential for the Kelvin probe to evaluate the effectiveness of dispenser cathode coatings.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions

Quantization in energy level due to confinement is generally observed for semiconductors. This property is used for various quantum devices, and it helps to improve the characteristics of conventional devices. Here, the authors have demonstrated the quantum size effects in ultrathin metal (Ni) layers sandwiched between two large band-gap materials. The metal work function is found to oscillate as a function of its thickness. The thermionic emission current bears the signature of the oscillating work function, which has a linear relationship with barrier heights. This methodology allows direct observation of quantum oscillations in metals at room temperature using a Schottky diode and electrical measurements using source-measure-units. The observed phenomena can provide additional mechanism to tune the barrier height of metal/semiconductor junctions, which are used for various electronic devices.

42 ENGINEERING↗
DOE OSTI2016

Characteristics of LaB{sub 6} thin films grown by pulsed laser deposition

LaB{sub 6} thin films were deposited at a temperature of 500 °C under vacuum or Ar atmosphere by the pulsed laser deposition technique on (100) Si substrates using a KrF laser. Grazing incidence x-ray diffraction investigations found that films were nanocrystalline, with grain size dimensions from 86 to 102 nm and exhibited microstrain values around 1.1%. Simulations of the x-ray reflectivity curves acquired from the deposited films showed that films had a density around 4.55 g/cm{sup 3}, and were very smooth, with a surface roughness root-mean-square of 1.5 nm, which was also confirmed by scanning electron and atomic force microscopy measurements. All films were covered by a ∼2 nm thick contamination layer that formed when samples were exposed to the ambient. Auger electron spectroscopy investigations found very low oxygen impurity levels below 1.5 at. % once the contamination surface layer was removed by Ar ion sputtering. Four point probe measurements showed that films were conductive, with a resistivity value around 200 μΩ cm for those deposited under Ar atmosphere and slightly higher for those deposited under vacuum. Nanoindentation and scratch investigations showed that films were rather hard, H ∼ 16 GPa, E ∼ 165 GPa, and adherent to the substrate. Thermionic emission measurements indicated a work function value of 2.66 eV, very similar to other reported values for LaB{sub 6}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2010

Excess leakage currents in high-voltage 4H-SiC Schottky diodes

The high-voltage 4H-SiC Schottky diodes are fabricated with a nickel barrier and a guard system in the form of 'floating' planar p-n junctions. The analysis of I-V characteristics measured in a wide temperature range shows that the forward current is caused by thermionic emission; however, the current is 'excessive' in the reverse direction. It is assumed that the reverse current flows locally through the points of the penetrating-dislocation outcrop to the Ni-SiC interface. The shape of reverse I-V characteristics makes it possible to conclude that the electron transport is governed by the monopolar-injection mechanism (the space-charge limited current) with participation of capture traps.

36 MATERIALS SCIENCE↗
DOE OSTI2011

High-voltage (3.3 kV) 4H-SiC JBS diodes

High-voltage 4H-SiC junction-barrier Schottky (JBS) diodes have been fabricated and studied. The working area of the diodes (anode contact area) is 1.44 mm{sup 2}. At currents in the range from 10{sup -11} to 1.5 A, the forward current-voltage characteristic of the diodes is described in terms of the thermionic emission model, with the series resistance taken into account: Schottky barrier height {Phi}{sub B} = 1.16 eV, ideality factor n = 1.01, and series resistance R{sub s} = 2.2 {Omega} (32 m{Omega} cm{sup 2}). The value of R{sub s} is governed by the resistance of the blocking epitaxial n-base (impurity concentration N = 9 Multiplication-Sign 10{sup 14} cm{sup -3}, n-layer thickness d = 34 {mu}m). The diodes can block a reverse voltage of at least 3.3 kV (with a leakage current at room temperature on the order of 1 {mu}A). It is suggested that the leakage mechanism is associated with crystal lattice defects (dislocations) in SiC. It is shown that the reverse-recovery characteristics of the diodes are determined by the flow of a purely capacitive reverse current.

36 MATERIALS SCIENCE↗
DOE OSTI2011

I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier

The I-V characteristics of high-voltage 4H-SiC diodes with a Schottky barrier {approx}1.1 eV in height are measured and analyzed. The forward I-V characteristics proved to be close to 'ideal' in the temperature range of 295-470 K. The reverse I-V characteristics are adequately described by the model of thermionic emission at the voltages to 2 kV in the temperature range of 361-470 K if, additionally, a barrier lowering with an increase in the band bending in the semiconductor is taken into account.

36 MATERIALS SCIENCE↗
DOE OSTI2016

On the ohmicity of Schottky contacts

The conditions under which Schottky contacts become ohmic are analyzed. Proceeding from classical concepts of the mechanisms of current flow, a generalized Schottky contact model is investigated. This model takes into account the thermionic current of majority charge carriers and the recombination current of minority carriers in Schottky contacts with a dielectric gap. Based on an analysis of the predictions of this model, ohmicity criteria are obtained for Schottky contacts and the conditions for a low injection level and the ohmicity of Si-based Schottky contacts are compared. It is shown that the conditions for Schottky-contact ohmicity do not coincide with those for p–n junctions.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Conductivity of Ga{sub 2}O{sub 3}–GaAs Heterojunctions

The effect of annealing in argon at temperatures of T{sub an} = 700–900°C on the I–V characteristics of metal–Ga{sub 2}O{sub 3}–GaAs structures is investigated. Samples are prepared by the thermal deposition of Ga{sub 2}O{sub 3} powder onto GaAs wafers with a donor concentration of N{sub d} = 2 × 10{sup 16} cm{sup –3}. To measure theI–V characteristics, V/Ni metal electrodes are deposited: the upper electrode (gate) is formed on the Ga{sub 2}O{sub 3} film through masks with an area of S{sub k} = 1.04 × 10{sup –2} cm{sup 2} and the lower electrode in the form of a continuous metallic film is deposited onto GaAs. After annealing in argon at T{sub an} ≥ 700°C, the Ga{sub 2}O{sub 3}-n-GaAs structures acquire the properties of isotype n-heterojunctions. It is demonstrated that the conductivity of the structures at positive gate potentials is determined by the thermionic emission from GaAs to Ga{sub 2}O{sub 3}. Under negative biases, current growth with an increase in the voltage and temperature is caused by field-assisted thermal emission in gallium arsenide. In the range of high electric fields, electron phonon-assisted tunneling through the top of the potential barrier is dominant. High-temperature annealing does not change the electron density in the oxide film, but affects the energy density of surface states at the GaAs–Ga{sub 2}O{sub 3} interface.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Intercepting Grids Made of Anisotropic Pyrolytic Graphite in Electron Guns with a Dispenser Cathode

The results of experimental studies into the application of anisotropic pyrolytic graphite (APG) as grid structures in power microwave devices with a dispenser cathode are detailed. The dependences of emission characteristics of molybdenum, hafnium, and APG in diodes and electron guns on the electron-flow power dissipated at the studied samples and on cathode temperature are presented. It is demonstrated that the power dissipation capacity of APG grid structures (without parasitic thermionic emission) is up to 20 and 9 times higher than that of molybdenum and hafnium grids, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Stable and Unstable Regimes of Plasma Diodes in the Presence of Electron Collisions

A thermionic energy converter as the Pierce diode of which the interelectrode space is filled with a uniform background of immobile ions is considered. The features of stability of its time-independent solutions are investigated under electron collisions with background gas. The solutions are obtained analytically by the Lagrange method. A dispersion equation is derived using a perturbative approach. The aperiodic solutions of this equation, as well as the oscillatory ones, are obtained and their properties are studied too. The regions of unstable aperiodic modes are determined. It is shown that all the oscillatory modes are stable.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2012

Tuning the DARHT Axis-II linear induction accelerator focusing

Flash radiography of large hydrodynamic experiments driven by high explosives is a well-known diagnostic technique in use at many laboratories, and the Dual-Axis Radiography for Hydrodynamic Testing (DARHT) facility at Los Alamos produces flash radiographs of large hydrodynamic experiments. Two linear induction accelerators (LIAs) make the bremsstrahlung radiographic source spots for orthogonal views of each test. The 2-kA, 20-MeV Axis-I LIA creates a single 60-ns radiography pulse. The 1.7-kA, 16.5-MeV Axis-II LIA creates up to four radiography pulses by kicking them out of a longer pulse that has a 1.6-μs flattop. The Axis-II injector, LIA, kicker, and downstream transport (DST) to the bremsstrahlung converter are described. Adjusting the magnetic focusing and steering elements to optimize the electron-beam transport through an LIA is often called 'tuning.' As in all high-current LIAs, the focusing field is designed to be as close to that of the ideal continuous solenoid as physically possible. In ideal continuous solenoidal transport a smoothly varying beam size can easily be found for which radial forces balance, and the beam is said to be 'matched' to the focusing field. A 'mismatched' beam exhibits unwanted oscillations in size, which are a source of free energy that contributes to emittance growth. This is undesirable, because in the absence of beam-target effects, the radiographic spot size is proportional to the emittance. Tuning the Axis-II LIA is done in two steps. First, the solenoidal focusing elements are set to values designed to provide a matched beam with little or no envelope oscillations, and little or no beam-breakup (BBU) instability growth. Then, steering elements are adjusted to minimize the motion of the centroid of a well-centered beam at the LIA exit. This article only describes the design of the tune for the focusing solenoids. The DARHT Axis-II LIA was required to be re-tuned after installing an accelerator cell to replace a failed solenoid in March of 2012. We took advantage of this opportunity to improve the design of the focusing tune with better models of the remaining partially failed solenoids, better estimates of beam initial conditions, and better values for pulsed-power voltages. As with all previous tunes for Axis-II, this one incorporates measures to mitigate beam-breakup (BBU) instability, image displacement instability (IDI), corkscrew (sweep), and emittance growth. Section II covers the general approach to of design of focusing solenoid tunes for the DARHT Axis-2 LIA. Section III explains the specific requirements and simulations needed to design the tune for the injector, which includes the thermionic electron source, diode, and six induction cells. Section IV explains the requirements and simulations for tuning the main accelerator, which consists of 68 induction cells. Finally, Section V explores sensitivity of the tune to deviations of parameters from nominal, random variations, and uncertainties in values. Four appendices list solenoid settings for this new tune, discuss comparisons of different simulation codes, show halo formation in mismatched beams, and present a brief discussion of the beam envelope equation, which is the heart of the method used to design LIA solenoid tunes.

43 PARTICLE ACCELERATORS↗
DOE OSTI2011

Nanoscale Materials and Architectures for Energy Conversion

The Kentucky EPSCoR Program supported an inter-university, multidisciplinary energy-related research cluster studying nanomaterials for converting solar radiation and residual thermal energy to electrical energy and hydrogen. It created a collaborative center of excellence based on research expertise in nanomaterials, architectures, and their synthesis. The project strengthened and improved the collaboration between the University of Louisville, the University of Kentucky, and NREL. The cluster hired a new faculty member for ultra-fast transient spectroscopy, and enabled the mentoring of one research scientist, two postdoctoral scholars and ten graduate students. Work was accomplished with three focused cluster projects: organic and photoelectrochemical solar cells, solar fuels, and thermionic energy conversion.

08 HYDROGEN↗
DOE OSTI2019

A Magnetized Electron Source For Ion Beam Cooling

A number of electron-ion collider facilities for nuclear physics research are under consid- eration in the United States. At Brookhaven National Lab (BNL), the eRHIC (electron Relativistic Heavy Ion Collider) facility would augment the existing ion/proton facility with an electron accelerator. Thomas Jefferson National Accelerator Facility (JLab) plans to use the existing CEBAF machine and add an ion/proton accelerator, as part of the Jefferson Lab Electron-Ion Collider (JLEIC). All such facilities require cooling of the ion beams in order to reach the luminosity goals. Different methods of cooling the ions using an electron beam are envisaged. BNL is pursuing coherent electron cooling and non-magnetized, bunched-beam cooling, while JLab is considering magnetized cooling. In addition to electron cooling, magnetized beams are of interest for other applica- tions, such as flat beam klystrons and novel means for producing bright beams for micro- undulators and compact X-ray sources. For example, flat beams generated from a mag- netized injector, in conjunction with low emittance, enable RF sources with frequencies above 100 GHz. While the market for high-performance injectors for electron cooling is limited, the market for high-frequency RF sources and compact X-ray systems is con- siderable. Thus, the design methodologies developed in this project have a wide range of applicability. In Phase I of this SBIR project, Xelera Research LLC performed simulations and calcu- lations to develop a prototype design for a magnetized electron injector that can be used as a source for cooling an ion beam. We developed general design methodologies and tech- niques that are applicable not only to specific machine designs but to other applications requiring magnetized injectors as well. In this Phase II SBIR project, Xelera Research LLC, in collaboration with a team at JLab, designed, built, and tested a thermionic elec- tron source for driving a magnetized electron cooler in a future electron-ion collider project. This device was delivered to JLab in July 2019 and achieved first beam in December 2019.

43 PARTICLE ACCELERATORS↗
NASA NTRS1963

SPACE ELECTRICAL POWER

Problems in electric power systems for space applications, emphasizing solar cells and thin- film cell research and including the solar- thermionic system

SOLAR POWER SYSTEM↗