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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Synthesis and electrical transport properties of superconducting platinum silicide thin films and devices

Here, we evaluate the material characteristics of superconducting platinum silicide (PtSi) thin films as candidate materials for superconducting quantum information devices compatible with silicon technology. These films were synthesized using magnetron sputtering under ultrahigh vacuum conditions, followed by rapid thermal annealing. Polycrystalline PtSi films synthesized by this method have the favorable properties of superconducting critical temperature of 0.95 K and relatively long zero-temperature Ginzburg-Landau coherence length of 76 nm. We further studied coplanar microbridge devices fabricated by electron beam lithography and chlorine-free reactive ion etching, finding that the temperature-dependent critical current density follows the Ginzburg Landau depairing mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Entanglement-assisted electron microscopy based on a flux qubit

A notorious problem in high-resolution biological electron microscopy is radiation damage caused by probe electrons. Hence, acquisition of data with minimal number of electrons is of critical importance. Quantum approaches may represent the only way to improve the resolution in this context, but all proposed schemes to date demand delicate control of the electron beam in highly unconventional electron optics. Here we propose a scheme that involves a flux qubit based on a radio-frequency superconducting quantum interference device, inserted in a transmission electron microscope. The scheme significantly improves the prospect of realizing a quantum-enhanced electron microscope for radiation-sensitive specimens.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRSDate not supplied

Magneto-Inductive Communications for Ocean Worlds

We propose a “magneto-inductive” technology, employing a sensitive receiver based on a Superconducting Quantum Interference Device (SQUID), to enable communications through conductive media, so as to pave the way for exploration of ocean worlds, especially a Europa scenario. Concepts for ice penetration systems to access the presumed liquid ocean on Europa are under development but it was previously considered impractical if not impossible to communicate through the briny ice with conventional propagating electromagnetic signals.

superconducting quantum interference device↗
DOE OSTI2019

Superconductor Electronics: Status and Outlook

Superconductor electronics combines passive and active superconducting components and sometimes normal resistors into functional circuits and systems that also include room-temperature electronics for amplification, power sources, necessary controls, etc., usually computer operated. Furthermore, complete systems include magnetic and electromagnetic shielding, cryogenic enclosures, and increasingly a cryocooler in self-contained units. Components or devices of low or high critical temperature superconductors include inductances (coils), passive transmission lines, resonators, antennae, filters, as well as active elements: Josephson junctions, Josephson oscillators, and superconducting quantum interference devices. Of multiple demonstrated applications, mostly but not only in science and metrology, currently most successful are voltage standards, astronomy detectors and large telescope cameras, instruments for material characterization, and magnetometers for geomagnetic prospecting. Major current efforts concentrate on energy-efficient high-end computing and quantum computing. The outcomes of these efforts are likely to be known in the course of the following decade.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Interface-driven magnetic anisotropy in relaxed La 0.7 Sr 0.3 CrO 3 /La 0.7 Sr 0.3 MnO 3 heterostructures on MgO

We investigate the structural and magnetic properties of La 0.7 Sr 0.3 CrO 3 /La 0.7 Sr 0.3 MnO 3 (LSMO) heterostructures grown on (001)-oriented MgO by molecular beam epitaxy. Due to the large film-substrate lattice mismatch, strain relaxation is found to occur within the first 2–3 unit cells (uc) of the film as evidenced by reflection high energy electron diffraction and high-resolution synchrotron x-ray reciprocal space mapping. Furthermore, we find that the presence of the LSCO spacer and capping layers leads to ferromagnetism in ultra-thin LSMO layers with thicknesses of the order of 2 uc with the magnetic easy axis oriented in the film plane. Net magnetic moments of 1.4 and 2.4 μ B /Mn are measured for (2 uc LSCO/2 uc LSMO) and (2 uc LSCO/4 uc LSMO) superlattices, respectively, by superconducting quantum interference device magnetometry. The effective magnetic anisotropy of the relaxed (2 uc LSCO/4 uc LSMO) heterostructure is found to be an order of magnitude higher than bulk LSMO highlighting the critical role of interfacial interactions in tuning magnetic anisotropy at complex oxide interfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Towards a graphene-based quantum impedance standard

Precision measurements of the quantum Hall resistance with alternating current (ac) in the kHz range were performed on epitaxial graphene in order to assess its suitability as a quantum standard of impedance. The quantum Hall plateaus measured with alternating current were found to be flat within one part in 10{sup 7}. This is much better than for plain GaAs quantum Hall devices and shows that the magnetic-flux-dependent capacitive ac losses of the graphene device are less critical. The observed frequency dependence of about −8 × 10{sup −8}/kHz is comparable in absolute value to the positive frequency dependence of plain GaAs devices, but the negative sign is attributed to stray capacitances which we believe can be minimized by a careful design of the graphene device. Further improvements thus may lead to a simpler and more user-friendly quantum standard for both resistance and impedance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Strain-Induced Spin-Resonance Shifts in Silicon Devices

In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1990

Anomalous Polarization May Improve Infrared Detectors

New configurations proposed for quantum-well devices. Simplifies alignment, increases sensitivity, and opens up more possibilities in design of quantum-well detectors of infrared radiation. In detector made according to proposed concept, light incident broadside on front surface absorbed. No special waveguide structures required.

Yang, Chan-Lon↗
DOE OSTI2014

Spray coated indium-tin-oxide-free organic photodiodes with PEDOT:PSS anodes

In this paper we report on Indium Tin Oxide (ITO)-free spray coated organic photodiodes with an active layer consisting of a poly(3-hexylthiophen) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend and patterned poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrodes. External quantum efficiency and current voltage characteristics under illuminated and dark conditions as well as cut-off frequencies for devices with varying active and hole conducting layer thicknesses were measured in order to characterize the fabricated devices. 60% quantum efficiency as well as nearly four orders of magnitude on-off ratios have been achieved. Those values are comparable with standard ITO devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Superconducting neural networks with disordered Josephson junction array synaptic networks and leaky integrate-and-fire loop neurons

Fully coupled randomly disordered recurrent superconducting networks with additional open-ended channels for inputs and outputs are considered the basis to introduce a new architecture to neuromorphic computing in this work. Various building blocks of such a network are designed around disordered array synaptic networks using superconducting devices and circuits as an example, while emphasizing that a similar architectural approach may be compatible with several other materials and devices. A multiply coupled (interconnected) disordered array of superconducting loops containing Josephson junctions [equivalent to superconducting quantum interference devices (SQUIDs)] forms the aforementioned collective synaptic network that forms a fully recurrent network together with compatible neuron-like elements and feedback loops, enabling unsupervised learning. This approach aims to take advantage of superior power efficiency, propagation speed, and synchronizability of a small world or a random network over an ordered/regular network. Additionally, it offers a significant factor of increase in scalability. Here, a compatible leaky integrate-and-fire neuron made of superconducting loops with Josephson junctions is presented, along with circuit components for feedback loops as needed to complete the recurrent network. Several of these individual disordered array neural networks can further be coupled together in a similarly disordered way to form a hierarchical architecture of recurrent neural networks that is often suggested as similar to a biological brain.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Growth, structural, and magnetic properties of single-crystal full-Heusler Co 2 TiGe thin films

This paper presents the growth, structural characterization, and measurement of magnetic properties of Co 2 TiGe thin films grown by molecular beam epitaxy on insulating MgO (001) substrates and conductive lattice matched InAlAs/InGaAs/InAlAs epitaxial layers grown on n-InP (001) substrates. A GdAs diffusion barrier was used to minimize interfacial reactions during Co 2 TiGe growth on InAlAs. The surface morphology, structural quality, and magnetic behavior were examined by reflection high-energy electron diffraction, scanning tunneling microscopy, X-ray diffraction, and superconducting quantum interference device magnetometry. The results reveal high quality Co 2 TiGe thin films with a saturation magnetization of ~1.8 μ B /formula unit and a Curie temperature of ~375 K. Finally, the magnetic easy axis was found to lie in the [110] direction but magnetometry also reveals that there is only a small difference in energy between the [110] and [010] magnetization directions.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Variational Quantum Eigensolver of Interacting Bosons with NISQ Devices [Slides]

Interacting bosons attract broad interest from different fields of physics and is often challenging to simulate on a classical computer. The recent advances in variational-quantum-eigensolver (VQE) algorithms offer a new and scalable way to investigate these interacting boson systems with noisy intermediate scale quantum (NISQ) devices. In this work, we present a proof-of-principle experiment of a boson VQE algorithm implemented on Rigetti's 8Q-device. Our experiment determines the low-energy eigenspectrum of the Rabi model -- a simple boson model with interactions mediated by an atom. Our result illustrates the promising future of scalable quantum simulation of interacting bosons using NISQ devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Towards Quantum-Limited Cryogenic Amplification for Multi-Qubit Platforms

Here we present the development of the building blocks of a Josephson parametric amplifier (JPA), namely the superconducting quantum interference device (SQUID) and the inductive pick-up coil that permits current coupling from a quantum dot into the SQUID. We also discuss our efforts in making depletion mode quantum dots using delta doped GaAs quantum wells. Because quantum dot based spin qubits utilize very low-level (~10 - 100pA), short duration (1ms - 1μs) current signals for state preparation and readout, these systems require close proximity cryogenic amplification to prevent signal corruption. Common amplification methods in these semiconductor quantum dots rely on heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) to amplify the readout signal from a single qubit. The state of the art for HBTs and HEMTs produce approximately 10µW of power when operating at high bandwidths. For few-qubit systems this level of heat dissipation is acceptable. However, for scaling up the number of qubits to several hundred or a thousand, the heat load produced in a 1 to 1 amplifier to qubit arrangement would overload the cooling capacity of a common dilution refrigerator, which typically has a cooling power of ~100µW at its base temperature. Josephson parametric amplifiers have been shown to dissipate ~1pW of power with current sensitivies on par with HBTs and HEMTs and with bandwidths 30 times that of HBTs and HEMTs, making them attractive for multi-qubit platforms. In this report we describe in detail the fabrication process flow for developing inductive pick-up coils and the fabrication and measurement of NbTiN and A1/A1Ox/A1 SQUIDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Improved microwave SQUID multiplexer readout using a kinetic-inductance traveling-wave parametric amplifier

We report on the use of a kinetic-inductance traveling-wave parametric amplifier (KITWPA) as the first amplifier in the readout chain of a microwave superconducting quantum interference device (SQUID) multiplexer (μmux). This μmux is designed to multiplex signals from arrays of low temperature detectors, such as superconducting transition-edge sensor microcalorimeters. When modulated with a periodic flux-ramp to linearize the SQUID response, the flux noise improves, on average, from 1.6 μ $\Phi$ 0 /$\sqrt{Hz}$ with the KITWPA off to 0.77 μ $\Phi$ 0 /$\sqrt{Hz}$ with the KITWPA on. When statically biasing the μmux to the maximally flux-sensitive point, the flux noise drops from 0.45 μ $\Phi$ 0 /$\sqrt{Hz}$ to 0.2 μ $\Phi$ 0 /$\sqrt{Hz}$⁠. We validate this new readout scheme by coupling a transition-edge sensor microcalorimeter to the μmux and detecting background radiation. In conclusion, the combination of μmux and KITWPA provides a variety of new capabilities including improved detector sensitivity and more efficient bandwidth utilization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗
NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗