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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Stochastic dislocation kinetics and fractal structures in deforming metals probed by acoustic emission and surface topography measurements

We demonstrate that the fractal dimension (FD) of the dislocation population in a deforming material is an important quantitative characteristic of the evolution of the dislocation structure. Thus, we show that peaking of FD signifies a nearing loss of uniformity of plastic flow and the onset of strain localization. Two techniques were employed to determine FD: (i) inspection of surface morphology of the deforming crystal by white light interferometry and (ii) monitoring of acoustic emission (AE) during uniaxial tensile deformation. A connection between the AE characteristics and the fractal dimension determined from surface topography measurements was established. As a common platform for the two methods, the dislocation density evolution in the bulk was used. The relations found made it possible to identify the occurrence of a peak in the median frequency of AE as a harbinger of plastic instability leading to necking. It is suggested that access to the fractal dimension provided by AE measurements and by surface topography analysis makes these techniques important tools for monitoring the evolution of the dislocation structure during plastic deformation—both as stand-alone methods and especially when used in tandem.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Multiferroic properties of Pb{sub 0.90}Sr{sub 0.10}TiO{sub 3}-CoFe{sub 2}O{sub 4} nanostructured bilayered thin film

Pb{sub 0.90}Sr{sub 0.10}TiO{sub 3}-CoFe{sub 2}O{sub 4}(PST10-CFO) nanostructured bilayered thin film were grown on Si (100) substrate by using metallo-organic decomposition chemical route and spin coating technique. Results show that PST (pervoskite structure) and CFO (spinel) phase coexist in the bilayered thin films, annealed at 650°C for 2hr and no obvious impurity phase can be detected. The structural, surface morphology and micro structural properties were confirmed by X-Ray diffraction (XRD), atomic force microscope (AFM) respectively. Excellent ferroelectric behavior at different voltage was observed, with two platinum electrodes only at surface of the bilayer thin film. A room temperature ferromagnetic behavior was observed in the bilayered Pb{sub 0.90}Sr{sub 0.10}TiO{sub 3}-CoFe{sub 2}O{sub 4} nanostructured thin film. The saturation magnetization and variation in coercivity value of the bilayer thin film is lower than that of the pure CFO film in the presence of non ferromagnetic PST layer which is the attributed that the significant coupling between the two phases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Developing Quantum Levitation of ICF Capsules Coated with MgB 2 Thin Films

Current inertial confinement fusion (ICF) capsule support technologies create implosion perturbations which reduce fusion yield, driving the search for new support paradigms. Quantum levitation of the capsule will eliminate the requirement of a physical support structure, increasing fusion yield. The application of an external magnetic field to a capsule coated with a superconducting film can provide the necessary conditions for levitation. Magnesium diboride (MgB 2 ) is an attractive option for ICF applications as it has a high reported superconducting transition temperature of 39 K and is a low Z compound. This project is part of an ongoing effort which seeks to coat ICF capsules with a thin layer of superconducting MgB 2 . This project studied the synthesis of MgB 2 and diffusion/reaction kinetics of B/Mg/B m ultilayer thin films. These films were sputter deposited on flat glassy carbon substrates. Films were annealed in a tube furnace at temperatures between 400 °C and 650 °C for a total of 29 hours with film characterization done at predetermined intervals. At each interval, superconducting properties of the samples were evaluated with superconducting quantum interference device (SQUID) magnetometry, while Rutherford backscattering (RBS) with 2 MeV 4 He + ions was done to determine the composition and depth profile of the films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to characterize surface morphology. Superconducting behavior was observed in thin films annealed at and above 450 °C. Formation of superconducting MgB 2 at 450 °C h as not been previously reported below 500 °C. The surface of the samples annealed at 500 °C and below was smooth with a measured roughness of ~3 nm. After 29 hours of annealing time, the 450 °C sample had a transition temperature of 27.3 K. The highest transition temperature measured was 30.9 K and was associated with a sample annealed for 29 hours at 650 °C. Transition temperatures were weakly positively correlated with annealing temperature and showed dependence on initial structural quality and oxygen contamination. Current research is attempting to synthesize superconducting MgB 2 coatings on spherical Si beads with the findings of this study. Future efforts are focused on the construction and testing of a levitation apparatus.

36 MATERIALS SCIENCE↗
NASA NTRS1992

An energy analysis of crack-initiation and arrest in epoxy

The objective of this work is to study fracture processes such as crack initiation and arrest in epoxy. A compact tension specimen with displacement-controlled loading is employed to observe multiple crack initiations and arrests. The energy release rate at crack initiation is significantly higher than that at crack arrest, as has been observed elsewhere. In this study, the difference between these energy release rates is found to depend on specimen size (scale effect), and is quantitatively related to the fracture surface morphology. The scale effect, similar to that in strength theory, is conventionally attributed to the statistics of defects which control the fracture process. Triangular shaped ripples, deltoids, are formed on the fracture surface of the epoxy during the slow sub-critical crack growth, prior to the smooth mirrorlike surface characteristic of fast cracks. The deltoids are complimentary on the two crack faces which excludes any inelastic deformation from consideration. The deltoids are analogous to the ripples created on a river surface downstream from a small obstacle. However, in spite of the expectation based on this analogy and the observed scale effect, there are no 'defects' at the apex of the deltoids detectable down to the 0.1 micron level. This suggests that the formation of deltoids during the slow process of subcritical crack growth is an intrinsic feature of the fracture process itself, triggered by inhomogeneity of material on a submicron scale. This inhomogeneity may be related to a fluctuation in the cross-link density of the epoxy.

Chudnovsky, A.↗
NASA NTRSDate not supplied

Characterization of Modern Spacecraft Materials under Space-simulated Environment

External spacecraft materials play an important role in satellite protection from the harsh space environment. Research has shown that the physical, chemical, and optical properties of matter change continuously as a result of exposure to solar radiation and aggressive chemical species produced in Earth’s upper atmosphere. Thorough knowledge of the material properties evolution throughout a planned mission lifetime helps to improve the reliability of spacecraft. Moreover, the establishment of correlation factors between true space exposure and accelerated space weather experiments at ground facilities enables accurate prediction of on-orbit material performance based on laboratory-based testing. The presented work aims to evaluate the radiation effects of low Earth orbit (LEO) environment, namely, exposure to the high-energy electrons, atomic oxygen (AO), and vacuum ultraviolet (VUV), of several modern spacecraft materials. The studied materials represent the “flight duplicates” of samples that will be launched as a part of the Materials International Space Station Experiment Flight Facility (MISSE-FF) mission in 2022. MISSE-FF flight sample collection comprises different classes of polymers, including polyimides from the Kapton family, manufactured by E.I du Pont de Nemours and Co., Polyethylene terephthalate (PET) materials, liquid crystal polymers, PI/Polyhedral Oligomeric Silsesquioxanes (POSS), and carbon and glass fiber reinforced polymers. A sequential exposure approach was undertaken to allow monitoring of degradation induced by each environmental component (electrons, AO, and VUV) separately. Surface morphology, optical, and charge transport properties of selected materials were characterized using different techniques, namely, atomic force and scanning electron microscopy, ultraviolet visible (UV/Vis) transmission, reflectance, Bidirectional Reflectance Distribution Function (BRDF), and surface potential decay measurements.

Elena Plis↗
NASA NTRS2024

Contamination Results of MISSE 8 Wake and Nadir Samples After 2 Years of Space Exposure on the International Space Station

Spacecraft in low Earth orbit (LEO) are subjected to harsh environmental conditions, including radiation (cosmic rays, ultraviolet, x-ray and charged particle radiation), micrometeoroids and orbital debris, temperature extremes, thermal cycling, and atomic oxygen. In addition, on-orbit spacecraft contamination is a serious spaceflight issue, with silicone contamination being a particular concern. In an effort to understand on-orbit contamination of Materials International Space Station Experiment 8 (MISSE 8) flight samples and other International Space Station (ISS) payloads, contamination studies were conducted post-flight on retrieved Teflon fluorinated ethylene propylene (FEP) samples flown in the wake and nadir orientations on MISSE 8. The wake sample was Teflon FEP (M8-W11) flown as part of the Glenn MISSE 8 Polymers Experiment on the Optical Reflector Materials Experiment-III Ram/Wake (ORMatE-III R/W) tray and exposed to the LEO wake environment for 2.0 years. The nadir samples were silver-Teflon FEP radiator pieces taken from the MISSE 8 Single Events Upset Xilinx-Sandia Experiment II (SEUXSE II) Power Box and exposed to the LEO nadir environment for 2.14 years. The Teflon FEP flight materials were analyzed for changes in surface morphology and chemistry as compared to pristine control samples. The wake samples were also analyzed for changes in optical properties. There was no evidence of a molecular contamination layer present on the surface of the MISSE 8 wake or nadir facing Teflon FEP flight samples, although both the wake and nadir flight samples contained particulate contamination in some regions. The analyzed nadir particles were primarily zinc rich. The majority of analyzed wake particles were comprised of oxidized aluminum with small amounts of zinc and magnesium. The wake particles appear to have arrived early in the mission (or pre-flight) during a single event. This paper provides details of the MISSE 8 sample contamination analyses.

Erosion↗
DOE OSTI2019

Microscopic Examination of the Silicon Surface Subjected to High-Dose Silver Implantation

Low-energy (E = 30 keV) Ag{sup +} ions have been implanted into single-crystalline Si wafers (c-Si) with an implantation dose varying from 1.25 × 10{sup 15} to 1.5 × 10{sup 17} ions cm{sup –2} and an ion beam current density varying from 2 to 15 μA/cm{sup 2}. The surface morphology of implanted wafers has been examined using scanning electron microscopy, transmission electron microscopy, and atomic force microscopy, and their structure has been studied by means of reflection high-energy electron diffraction and elemental microanalysis. It has been shown that for minimal irradiation doses used in experiments, the surface layer of c-Si experiences amorphization. It has been found that when the implantation dose is in excess of the threshold value (~3.1 × 10{sup 15} ions cm{sup –2}), Ag nanoparticles uniformly distributed over the Si surface arise in the irradiated Si layer. At a dose exceeding 10{sup 17} ions cm{sup –2}, a porous Si structure is observed. In this case, the Ag nanoparticle size distribution becomes bimodal with coarse particles localized at the walls of Si pores.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone

In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1 ± 0.01 nm/cycle within the wide ALD temperature window of 175–300 °C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure, refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}–Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3 Ω cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Morphological and electrochemical characterization of electrodeposited Zn–Ag nanoparticle composite coatings

Silver nanoparticles with an average size of 23 nm were chemically synthesized and used to fabricate Zn–Ag composite coatings. The Zn–Ag composite coatings were generated by electrodeposition method using a simple sulfate plating bath dispersed with 0.5, 1 and 1.5 g/l of Ag nanoparticles. Scanning electron microscopy, X-ray diffraction and texture co-efficient calculations revealed that Ag nanoparticles appreciably influenced the morphology, micro-structure and texture of the deposit. It was also noticed that agglomerates of Ag nanoparticles, in the case of high bath load conditions, produced defects and dislocations on the deposit surface. Ag nanoparticles altered the corrosion resistance property of Zn–Ag composite coatings as observed from Tafel polarization, electrochemical impedance analysis and an immersion test. Reduction in corrosion rate with increased charge transfer resistance was observed for Zn–Ag composite coatings when compared to a pure Zn coating. However, the particle concentration in the plating bath and their agglomeration state directly influenced the surface morphology and the subsequent corrosion behavior of the deposits. - Highlights: • Synthesis of Ag nanoparticles with an average size of 23 nm • Fabrication of Zn/nano Ag composite coating on mild steel • Composite coatings showed better corrosion resistance. • Optimization of particle concentration is necessary.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effects of surface chemical potentials on cation segregation

Surface cation segregation on perovskite-type electrodes is one of the major issues limiting the durability of high-temperature solid-oxide electrochemical cells, and this process is strongly dependent on temperature, the external gas-environment, and impurities in air, such as CO 2 . Here cation segregation on La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-δ (LSCF) is systematically evaluated under a set of chemical potentials to determine the origin of surface segregation and the dominant factors that govern the segregation process. Temperature is the main driving force for surface strontium segregation as the thermodynamic stability of each phase varies, and the SrO particles appear primarily in a specific operating window. In addition to the required thermal energy, the presence of gaseous oxygen-containing molecules as reactants help drive the precipitation of SrO. Oxygen partial pressure (pO 2 ) controls the defect chemistry of LSCF, leading to promotion or suppression of surface segregation. The presence of CO 2 promotes the nucleation process and suppresses the surface migration step, significantly altering the surface morphology. We also show that A-site deficiency can limit the SrO segregation in certain conditions but shows no effect in others. This study reveals the impact of gas–solid interactions on surface segregation and highlights the subtle relationship between multiple segregation driving forces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Oxygen transport in the internal xenon plasma of a dispenser hollow cathode

Reactive gases such as oxygen and water vapor modify the surface morphology of BaO dispenser cathodes and degrade the electron emission properties. For vacuum cathodes operating at fixed temperature, the emission current drops rapidly when oxygen adsorbs on top of the low work function surface. Previous experiments have shown that plasma cathodes are more resistant to oxygen poisoning and can operate with O{sub 2} partial pressures one to two orders of magnitude higher than vacuum cathodes before the onset of poisoning occurs. Plasma cathodes used for electric thrusters are typically operated with xenon; however, gas phase barium, oxygen, and tungsten species may be found in small concentrations. The densities of these minor species are small compared with the plasma density, and thus, their presence in the discharge does not significantly alter the xenon plasma parameters. It is important, however, to consider the transport of these minor species as they may deposit on the emitter surface and affect the electron emission properties. In this work, we present the results of a material transport model used to predict oxygen fluxes to the cathode surface by solving the species conservation equations in a cathode with a 2.25 mm diameter orifice operated at a discharge current of 15 A, a Xe flow rate of 3.7 sccm, and 100 ppm of O{sub 2}. The dominant ionization process for O{sub 2} is resonant charge exchange with xenon ions. Ba is effectively recycled in the plasma; however, BaO and O{sub 2} are not. The model shows that the oxygen flux to the surface is not diffusion-limited; therefore, the high resistance to oxygen poisoning observed in plasma cathodes likely results from surface processes not considered here.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2011

Ripple rotation in epitaxial growth of MnAs(1100)

Rippled states formation driven by kinetic instability is evidenced in the case of MnAs(1100) hetero- and homoepitaxial growth in a narrow multistable range of growth parameters. The evolution of the surface morphology in this range, comprising slope selection and ripple rotation, maps the kinetic phase diagram recently predicted [A. Levandovsky and L. Golubovic, Phys. Rev. E 76, 041605 (2007)] for growth on rectangular symmetry surfaces, including Ehrlich-Schwoebel instability and effects related to vertical asymmetry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Step-flow anisotropy of the m-plane GaN (1100) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy

The homoepitaxial growth of m-plane (1100) GaN was investigated by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. The surface morphologies as a function of sample miscut were studied, providing evidence for a strong growth anisotropy that is a consequence of the anisotropy of Ga adatom diffusion barriers on the m-plane surface recently calculated ab initio[Lymperakis and Neugebauer, Phys. Rev. B 79, 241308(R) (2009)]. We found that substrate miscut toward [0001] implies a step flow toward <1126> while substrate miscut toward [0001] causes formation of atomic steps either perpendicular or parallel to the [0001] direction, under N-rich conditions at 730 deg C. We describe the growth conditions for achieving atomically flat m-plane GaN layers with parallel atomic steps.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Probability of brittle failure

A methodology was developed for collecting statistically representative data for crack initiation and arrest from small number of test specimens. An epoxy (based on bisphenol A diglycidyl ether and polyglycol extended diglycyl ether and cured with diethylene triamine) is selected as a model material. A compact tension specimen with displacement controlled loading is used to observe multiple crack initiation and arrests. The energy release rate at crack initiation is significantly higher than that at a crack arrest, as has been observed elsewhere. The difference between these energy release rates is found to depend on specimen size (scale effect), and is quantitatively related to the fracture surface morphology. The scale effect, similar to that in statistical strength theory, is usually attributed to the statistics of defects which control the fracture process. Triangular shaped ripples (deltoids) are formed on the fracture surface during the slow subcritical crack growth, prior to the smooth mirror-like surface characteristic of fast cracks. The deltoids are complementary on the two crack faces which excludes any inelastic deformation from consideration. Presence of defects is also suggested by the observed scale effect. However, there are no defects at the deltoid apexes detectable down to the 0.1 micron level.

Kim, A.↗
DOE OSTI2014

MLCT excited states at interfaces and in rigid media: Applications in energy conversion

In this proposal for continued support from the DOE, we propose to build on our understanding of light-driven electron transfer by molecules and molecular assemblies on oxide surfaces. We will conduct a systematic investigation of injection and back electron transfer dynamics on the surfaces of thin (1-10 μm), mesoporous, transparent conducting oxide films consisting of 10-20 nm tin-doped indium oxide (Sn:In2O3, ITO)) nanoparticles. These materials are unique because they mimic the morphology, surface area, and oxide nature of conventional mesoporous, nanocrystalline metal oxide thin films such as TiO 2 , SnO2, and NiO used in DSSC and DSPEC applications but they are conductive with high electron mobilities (0.1-10 cm2 V-1 s-1) and conductivities (101-104 Ω-1 cm-1) over a wide range of applied potentials. Their high conductivities and metallic behavior allow the Fermi level at nanoparticle surfaces to be tuned systematically by varying an applied bias. We will investigate injection, intra-assembly, and back electron transfer dynamics on nanoITO by transient absorption measurements on the picosecond to millisecond timescales. One series of experiments will build on initial results from DOE-supported research and focus on the bias- and medium-dependence of interfacial electron transfer by surface-bound molecular chromophores to investigate: i) the bias dependence of injection and back electron transfer, ii) injection by short-lived, otherwise inaccessible excited-states, and iii) medium effects. In parallel, we will investigate the dynamic interfacial properties of nanoITO-bound molecular assemblies designed for photogalvanic solar energy conversion. These studies will focus on surface-prepared, layer-by-layer donor-chromophore-acceptor assemblies in which inter-molecular excited-state quenching leads to redox separation as opposed to interfacial electron transfer quenching by the semiconductor material. Transient absorption measurements performed on nanoITO|-acceptor-chromophore-donor (photogalvanic anode) and nanoITO|-donor-chromophore-acceptor (photogalvanic cathode) assemblies will be used to explore: i) light-induced intermolecular electron transfer in layer-by-layer assemblies and ii) bias dependence on transient redox energy storage and long range (>5 nm) electron transfer reactions.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point.[1] Among a number of candidate materials, AlxGa1-xN is the strongest, having bipolar dopability, thermal and chemical stability, an ultra-wide bandgap, and demonstrated experimental feasibility. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. [1] Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. [2,3,4] In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees Celsius. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers.

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
DOE OSTI2024

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point. AlxGa1-xN ranks high among candidate materials, having bipolar dopability, thermal and chemical stability and an ultra-wide bandgap. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees C. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers. (1) R. J. in a face-to-face configuration, as illustrated in the schematic at left. Kaplar et al 2017, ECS J. Solid State Sci. Technol. 6 Q3061; (2) D. M. Roberts et al 2022, https://arxiv.org/abs/2208.11769; (3) T. Aizawa et al 2008, J Crys Growth 310, 1 22; (4) R. Liu et al 2002, Appl. Phys. Lett. 81, 3182-3184.

ENGINEERING↗
DOE OSTI2011

Nano-Hydroxyapatite Thick Film Gas Sensors

In the present work pure and metal ions (Co and Fe) doped hydroxyapatite (HAp) thick films have been successfully utilized to improve the structural, morphological and gas sensing properties. Nanocrystalline HAp powder is synthesized by wet chemical precipitation route, and ion exchange process is employed for addition of Co and Fe ions in HAp matrix. Moreover, swift heavy ion irradiation (SHI) technique is used to modify the surface of pure and metal ion exchanged HAp with various ion fluence. The structural investigation of pure and metal ion exchanged HAp thick films are carried out using X-ray diffraction and the presence of functional group is observed by means FTIR spectroscopy. Furthermore, surface morphology is visualized by means of SEM and AFM analysis. CO gas sensing study is carried out for, pure and metal ions doped, HAp thick films with detail investigation on operating temperature, response/recovery time and gas uptake capacity. The surface modifications of sensor matrix by SHI enhance the gas response, response/recovery and gas uptake capacity. The significant observation is here to note that, addition of Co and Fe in HAp matrix and surface modification by SHI improves the sensing properties of HAp films drastically resulting in gas sensing at relatively lower temperatures.

36 MATERIALS SCIENCE↗