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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

The temporal evolution of the 1-5 micron spectrum of V1974 CYGNI (Nova Cygni 1992)

We present 1-5 micrometer moderate- and high-resolution infrared spectra of the ONeMg nova V1974 (Nova Cygni 1992) obtained at multiple epochs during an approximately 500 day period after outburst. During the first 80 days, the spectra exhibited continuum emission from thermal bremsstrahlung (free-free radiation) with prominent recombination line emission from hydrogen, helium, nitrogen, and oxygen. The measurement Full Width at Half Maximum (FWHM) of these recombination lines suggests that the initial velocity of the ejecta was approximately equals 2400-3400 km/s. We estimate from the hydrogen recombination line ratios that the density of the ionized shell at this epoch was approximately equals 10(exp 9), with an effective electron temperature of approximately equals 5 x 10(exp 3) K. As the temporal evolution of the ejecta progressed, the hydrogen and helium lines diminished in intensity, and coronal lines of aluminum, calcium, magnesium, neon, and sulfur appeared by approximately day 80. The coronal line emission phase persisted for over 400 days. During this epoch, no significant dust formation occurred. We find that the ejecta of V1974 Cyg were overabundant in aluminum with respect to silicon by a factor of approximately equals 5 and in magnesium with respect to silicon by a factor of greater than or equal to 3 relative to the solar photosphere. Comparison of our observed overabundances with recent model predictions of elemental synthesis in ONeMg outbursts suggests that the accreted envelope on V1974 Cyg was close to solar composition and that the precursor ONeMg white dwarf had a mass of approximately equals 1 solar mass.

Woodward, Charles E.↗
NASA NTRS1996

Products of Dissociative Recombination in the Ionosphere

SRI International undertook a novel experimental measurement of the product states formed by dissociative ro-combination (DR) of C2(+), NO(+), and N2(+) as a function of both electron energy and reactant ion vibrational level. For these measurements we used a recently developed experimental technique for measuring dissociation product distributions that allows both the branching ratios to be accurately determined and the electronic and ro-vibrational state composition of the reactant ions to be specified. DR is the dominant electron loss mechanism in all regions of the ionosphere. In this process, electron attachment to the molecular ion produces an unstable neutral molecule that rapidly dissociates.

Cosby, Philip↗
DOE OSTI2023

The smallest functional antibody fragment: Ultralong CDR H3 antibody knob regions potently neutralize SARS-CoV-2

Cows produce antibodies with a disulfide-bonded antigen-binding domain embedded within ultralong heavy chain third complementarity determining regions. This “knob” domain is analogous to natural cysteine-rich peptides such as knottins in that it is small and stable but can accommodate diverse loops and disulfide bonding patterns. We immunized cattle with SARS-CoV-2 spike and found ultralong CDR H3 antibodies that could neutralize several viral variants at picomolar IC 50 potencies in vitro and could protect from disease in vivo. The independent CDR H3 peptide knobs were expressed and maintained the properties of the parent antibodies. The knob interaction with SARS-CoV-2 spike was revealed by electron microscopy, X-ray crystallography, NMR spectroscopy, and mass spectrometry and established ultralong CDR H3-derived knobs as the smallest known recombinant independent antigen-binding fragment. Unlike other vertebrate antibody fragments, these knobs are not reliant on the immunoglobulin domain and have potential as a new class of therapeutics.

60 APPLIED LIFE SCIENCES↗
NASA NTRS1976

Effects of electric fields and other processes upon the nighttime high-latitude F layer

The dynamics of the nighttime high-latitude F region is studied with special emphasis on the formation of the electron-density trough region which lies equatorward of the auroral oval. It is found that the absence of photoionization together with ordinary ionic recombination and slow plasma convection velocity can give a deep trough over a period of many hours. However, the normal global pattern of electric fields has regions of plasma convection sufficiently rapid to affect the rate of O(+) + N2 reactions and to speed the rate of ionospheric decay. In addition, the escape of thermal plasma via the polar winds as well as N2 vibrational excitation and enhanced N2 densities act to deplete the ionosphere. In combination, these destructive processes can readily account for the great variety of troughs found by experimentation. Thus, it appears that there is no single cause for the observed troughs, but that at various times, different processes act together to create density depressions of substantial magnitude.

Schunk, R. W.↗
NASA NTRS1979

Silicon solar cell fabrication technology

The laser cell scanner was used to characterize a number of solar cells made in various materials. An electron beam-induced current (EBIC) study was performed using a stereoscan scanning electron microscope. Planar p-n junctions were analyzed. A theory for the EBIC based on the analytical solution of the ambipolar diffusion equation under the influence of electron beam excitation parameter z (which is related to beam penetration), the junction depth Z sub j, the beam current and the surface recombination, was formulated and tested. The effect of a grain boundary was studied.

Stafsudd, O. M.↗
NASA NTRS1989

The morphologies and physical properties of ultracompact H II regions

Seventy-five ultracompact (UC) H II regions are observed 0.4 arcsec resolution at 2 and 6 cm using the Very Large Array, and their radio continuum brightness distributions are presented in the form of contour plots. H-76 alpha recombination line profiles are obtained for six sources using a 4.4 arcsec beam. It is shown that these UC H II regions have electron densities of at least approximately 10,000 per cubic cm, emission measures of at least approximately 10 to the 7th pc cm to the -6th, and diameters no more than approximately 0.1 pc, consistent with their being small photoionized nebulae produced by O and B stars embedded in clouds of molecular gas and dust. At high angular resolution five different morphologies of the ionized gas are seen: spherical or unresolved (43 percent), cometary (20 percent), core-halo (16 percent), shell (4 percent), and irregular or multiply peaked (17 percent). Evidence is presented that the UC H II region phase of a massive star must last for a significant fraction of its main-sequence lifetime.

Wood, Douglas O. S.↗
NASA NTRS1993

Simulations of a molecular plasma in collisional-radiative nonequilibrium

A code for the simulation of nonequilibrium plasmas is being developed, with the capability to couple the plasma fluid-dynamics for a single fluid with a collisional-radiative model, where electronic states are treated as separate species. The model allows for non-Boltzmann distribution of the electronic states. Deviations from the Boltzmann distributions are expected to occur in the rapidly ionizing regime behind a strong shock or in the recombining regime during a fast expansion. This additional step in modeling complexity is expected to yield more accurate predictions of the nonequilibrium state and the radiation spectrum and intensity. An attempt at extending the code to molecular plasma flows is presented. The numerical techniques used, the thermochemical model, and the results of some numerical tests are described.

Cambier, Jean-Luc↗
NASA NTRS2003

Switching Oxide Traps

We consider radiation-induced charge trapping in SiO2 dielectric layers, primarily from the point of view of CMOS devices. However, SiO2 insulators are used in many other ways, and the same defects occur in other contexts. The key studies, which determined the nature of the oxide charge traps, were done primarily on gate oxides in CMOS devices, because that was the main radiation problem in CMOS at one time. There are two major reviews of radiation-induced oxide charge trapping already in the literature, which discuss the subject in far greater detail than is possible here. The first of these was by McLean et al. in 1989, and the second, ten years later, was intended as an update, because of additional, new work that had been reported. Basically, the picture that has emerged is that ionizing radiation creates electron-hole pairs in the oxide, and the electrons have much higher mobility than the holes. Therefore, the electrons are swept out of the oxide very rapidly by any field that is present, leaving behind any holes that escape the initial recombination process. These holes then undergo a polaron hopping transport toward the Si/SiO2 interface (under positive bias). Near the interface, some fraction of them fall into deep, relatively stable, long-lived hole traps. The nature and annealing behavior of these hole traps is the main focus of this paper.

Oldham, Timothy R.↗
NASA NTRS1984

Molecular processes in a high temperature shock layer

Models of the shock layer encountered by an Aeroassisted Orbital Transfer Vehicle require as input accurate cross sections and rate constants for the atomic and molecular processes that characterize the shock radiation. From the estimated atomic and molecular densities in the shock layer and the expected residence time of 1 m/s, it can be expected that electron-ion collision processes will be important in the shock model. Electron capture by molecular ions followed by dissociation, e.g., O2(+) + e(-) yields 0 + 0, can be expected to be of major importance since these processes are known to have high rates (e.g., 10 to the -7th power cu/cm/sec) at room temperature. However, there have been no experimental measurements of dissociative recombination (DR) at temperatures ( 12000K) that are expected to characterize the shock layer. Indeed, even at room temperature, it is often difficult to perform experiments that determine the dependence of the translational energy and quantum yields of the product atoms on the electronic and vibrational state of the reactant molecular ions. Presented are ab initio quantum chemical studies of DR for molecular ions that are likely to be important in the atmospheric shock layer.

Guberman, S. L.↗
DOE OSTI2022

RLAs WITH FFA ARCS FOR PROTONS AND ELECTRONS

Recirculating Linear Accelerators (RLAs) provide an efficient way of producing high-power, high-quality, continuous-wave hadron and lepton beams. However, their attractiveness had been limited by the cumbersomeness of multiple recirculating arcs and by the complexity of the spreader and recombiner regions. The latter problem sets one of the practical limitations on the maximum number of recirculations. We present an RLA design concept where the problem of multiple arcs is solved using the Fixed-Field Alternating gradient (FFA) design as in CBETA. The spreader/recombiner design is greatly simplified using an adiabatic matching approach. It allows for the spreader/recombiner function to be accomplished by a single beam line. The concept is applied to the designs of a high-power hadron accelerator being considered at ORNL and a CEBAF electron energy doubling project, FFA@CEBAF, being developed at Jefferson lab.

Morozov, V. S.↗
DOE OSTI2022

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗
NASA NTRS1997

Data Base for CFD Validation

The flow behind the shock wave formed around objects which fly at hypervelocity behaves differently from that of a perfect gas. Molecules become vibrationally excited, dissociated, and ionized. The hot gas may emit or absorb radiation. When the atoms produced by dissociation reach the wall surface, chemical reactions, including recombination, may occur. The thermochemical phenomena of vibration, dissociation, ionization, surface chemical reaction, and radiation are referred to commonly as high-temperature real-gas phenomena. The phenomena cause changes in the dynamic behavior of the flow and the surface pressure and heat transfer distribution around the object. The character of a real gas is described by the internal degrees of freedom and state of constituent molecules; nitrogen and oxygen for air. The internal energy states, rotation, vibration and electronic, of the molecules are excited and, in the limit, the molecular bonds are exceeded and the gas dissociated into atomic and, possibly, ionic constituents. The process of energy transfer causing excitation, dissociation and recombination is a rate process controlled by particle collisions. Binary, two-body, collisions are sufficient to cause internal excitation, dissociation and ionization while three-body collisions are required to recombine the particles into molecular constituents. If the rates of energy transfer are fast with respect to the local fluid dynamic time scale the gas is in, or nearly in, equilibrium. If the energy transfer rates are very slow the gas can be described as frozen. In all other instances, wherein any of the energy exchange rates are comparable to the local fluid time scale, the gas will be thermally or chemically reacting and out of equilibrium. Real gas thermochemical nonequilibrium processes are important in the determination of aerodynamic heating; both convective (including wall catalytic effects) and radiative heating. To illustrate this we consider the hypervelocity flow over a bluff body typical of an atmospheric entry vehicle or an aerospace transfer vehicle (ASTV). The qualitative aspects of a hypersonic flow field over a bluff body are discussed in two parts, forebody and afterbody, with attention to which particular physical effects must be included in an analysis. This will indicate what type of numerical modeling will be adequate in each region of the flow. A bluff forebody flow field is dominated by the presence of the strong bow shock wave and the consequent heating, and chemical reaction of the gas. At high altitude hypersonic flight conditions the thermal excitation and chemical reaction of the gas occur slowly enough that a significant portion of the flow field is in a state of thermochemical nonequilibrium. A second important effect is the presence of the thick boundary layer along the forebody surface. In this region there are large thermal and chemical species gradients due to the interaction of the gas with the wall. Also at high altitudes the shock wave and the boundary layer may become so thick that they merge; in this case the entire shock layer is dominated by viscous effects.

Deiwert, George S.↗
DOE OSTI2024

The Acetylene Bridge in Intramolecular Singlet Fission: A Boon or A Nuisance?

Various analogues of the alkylsilylacetylene group are frequently used as auxiliary groups to enhance the solubility and stability of the acene dimer core, widely used as platforms to investigate intramolecular singlet fission (iSF) mechanisms. However, while in the 2,2’-linked dimers they are primarily auxiliary groups, these are essential fragments of the bridging units in 6,6’/5,5’-linked dimers, the two preferred choices for dimerization. The starkly different iSF dynamics observed in the two variants raise the question of what role the acetylene bridges play. Here, we systematically designed a set of (oligo-)para-phenylene bridged 2,2’-linked pentacene dimers with an additional acetylene fragment in the bridging unit to mimic the structure of 6,6’-linked dimers. Contrasting the results with previously reported analogous 2,2’-linked and 6,6’-linked pentacene dimers reveals that the acetylene bridges contribute to significant conformational freedom. This effect provides a mechanism to promote spin evolution within the triplet pair to achieve free triplets but also offers new parasitic pathways for triplet-pair recombination, revealing that this structural motif can be both a boon and a nuisance. Additionally, our analysis reveals that these bridges directly modify the electronic states, highlighting significant pitfalls of the standard chromophore-bridge-chromophore framework used to design and interpret photophysics of iSF materials.

14 SOLAR ENERGY↗
NASA NTRS1987

Predictions of the electrical conductivity and charging of the aerosols in Titan's atmosphere

Computational results are given for Titan atmosphere aerosol electrical conductivity and charge at altitudes up to 400 km, together with a consideration of ionization from such sources as galactic cosmic rays and electron precipitation from the Saturnian magnetosphere. Predicted conductivity shows the existence of substantial electron concentrations up to the Titan surface. At altitudes of more than 100 km, and aerosol concentrations greater than 10/cu cm, electron/positive ion-recombination is found to be controlled by the recombination of the aerosols' surfaces rather than by the gas-kinetic recombination rate.

Borucki, W. J.↗
NASA NTRS2001

Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing

Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.

Bhattacharya, Pallab↗
NASA NTRS2003

Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

Ponchak, George E.↗
DOE OSTI2022

Computational Approach for Probing Redox Potential for Iron-Sulfur Clusters in Photosystem I

Photosystem I is a light-driven electron transfer device. Available X-ray crystal structure from Thermosynechococcus elongatus showed that electron transfer pathways consist of two nearly symmetric branches of cofactors converging at the first iron–sulfur cluster F X , which is followed by two terminal iron–sulfur clusters F A and F B . Experiments have shown that F X has lower oxidation potential than F A and F B , which facilitates the electron transfer reaction. Here, we use density functional theory and Multi-Conformer Continuum Electrostatics to explain the differences in the midpoint Em potentials of the F X , F A and F B clusters. Our calculations show that F X has the lowest oxidation potential compared to F A and F B due to strong pairwise electrostatic interactions with surrounding residues. These interactions are shown to be dominated by the bridging sulfurs and cysteine ligands, which may be attributed to the shorter average bond distances between the oxidized Fe ion and ligating sulfurs for F X compared to F A and F B . Moreover, the electrostatic repulsion between the 4Fe-4S clusters and the positive potential of the backbone atoms is lowest for F X compared to both F A and F B . These results agree with the experimental measurements from the redox titrations of low-temperature EPR signals and of room temperature recombination kinetics.

59 BASIC BIOLOGICAL SCIENCES↗