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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures

A method for the production of high-quality radiation-resistant silicon-on-sapphire structures through the fabrication of a layer of nanopores in sapphire by helium ion implantation, i.e., by creating charge-carrier recombination centers, is proposed. In this case, the quality of the silicon layer is simultaneously improved. The problem of the thermal stability of the pores is discussed with the aim of analyzing the possibility of producing a microcircuit on the resultant modified silicon-on-sapphire sample. The layer of pores possesses a large total surface area and, hence, decreases the lifetime of charge carriers generated during irradiation of the operating microcircuit. This effect reduces the charge at the silicon-sapphire interface and improves radiation resistance.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

Si self-diffusion in the presence of end-of-range (EOR) defects is investigated using {sup nat}Si/{sup 28}Si isotope multilayers. The isotope multilayers were amorphized by Ge ion implantation, and then annealed at 800–950 °C. The behavior of Si self-interstitials is investigated through the {sup 30}Si self-diffusion. The experimental {sup 30}Si profiles show further enhancement of Si self-diffusion at the EOR defect region, in addition to the transient enhanced diffusion via excess Si self-interstitials by EOR defects. To explain this additional enhanced diffusion, we propose a model which takes into account enhanced diffusion by tensile strain originated from EOR defects. The calculation results based on this model have well reproduced the experimental {sup 30}Si profiles.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Nanoscale Junction Formation by Gas-Phase Monolayer Doping

A major challenge in transistor technology scaling is the formation of controlled ultrashallow junctions with nanometer-scale thickness and high spatial uniformity. Monolayer doping (MLD) is an efficient method to form such nanoscale junctions, where the self-limiting nature of semiconductor surfaces is utilized to form adsorbed monolayers of dopant-containing molecules followed by rapid thermal annealing (RTA) to diffuse the dopants to a desired depth. Unlike ion implantation, the process does not induce crystal damage, thus making it highly attractive for nanoscale transistor processing. To date, reported MLD processes have relied on solution processing for monolayer formation. Gas-phase processing, however, benefits from higher intra- and interwafer uniformity and conformal coverage of 3D structures and is more desirable for manufacturing. In this regard, we report a new approach for MLD in silicon and germanium using gas-phase monolayer formation. We call this technology gas-phase monolayer doping (GP-MLD). This method relies on sequential pulse-purge cycles of gas-phase dopant-containing molecules to form a boron- or phosphorus-containing monolayer on a target semiconductor surface. Here, we show the feasibility of our approach through the formation of ultrashallow B- and P-doped junctions on Si and Ge surfaces. The mechanism of adsorption is characterized using Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Sub-5 nm junction depths with high dopant dose are obtained as characterized by secondary ion mass spectrometry and sheet resistance measurements. Additionally, we demonstrate that area selectivity can be achieved via lithographic patterning of the monolayer dopants before the diffusion step. The results demonstrate the versatility of the GP-MLD approach for formation of controlled and ultrashallow junctions.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Photoluminescence in silicon implanted with silicon ions at amorphizing doses

Luminescent and structural properties of n-FZ-Si and n-Cz-Si implanted with Si ions at amorphizing doses and annealed at 1100 Degree-Sign C in a chlorine-containing atmosphere have been studied. An analysis of proton Rutherford backscattering spectra of implanted samples demonstrated that an amorphous layer is formed, and its position and thickness depend on the implantation dose. An X-ray diffraction analysis revealed that defects of the interstitial type are formed in the samples upon annealing. Photoluminescence spectra measured at 78 K and low excitation levels are dominated by the dislocation-related line D1, which is also observed at 300 K. The peak position of this line, its full width at half-maximum, and intensity depend on the conduction type of Si and implantation dose. As the luminescence excitation power is raised, a continuous band appears in the spectrum. A model is suggested that explains the fundamental aspects of the behavior of the photoluminescence spectra in relation to the experimental conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Propagation of electro-kinetic waves in magnetized GaN semiconductor with nano-sized ion colloids

Based on hydrodynamic model of multi-component plasma, an analytical study on propagation of longitudinal electro-kinetic (LEK) waves in wurtzite and zincblende structures of GaN is carried out. Nano-sized ion colloids (NICs) are embedded in the sample by the technique of ion-implantation. The implanted NICs are considered massive by an order as compared to the host lattice points and do not participate in Based LEK perturbations. Though, the NICs are continuously bombarded by the electrons as well as the holes yet, the former acquires a net negative charge owing to relatively higher mobility of electrons and consequently results into depletion of electron density in the medium. It i s found that the presence of charged NICs significantly modifies the dispersion and amplification characteristics of LEK waves in magnetized GaN semiconductor plasma and their role becomes increasingly effective as the fraction of charge on them increases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Field Emission Studies Toward Improving the Performance of DC High Voltage Photoelectron Guns

Field emission is the main mechanism that prevents DC high voltage photoemission electron guns from operating at the very high bias voltages required to produce low emittance beams. Gas conditioning is shown to eliminate field emission from cathode electrodes used inside DC high voltage photoelectron guns. Measurements and simulation results indicate that gas conditioning eliminates field emission from cathode electrodes via two mechanisms: sputtering and implantation, with the benefits of implantation reversed by heating the electrode. The field emission characteristics of 5 stainless steel electrodes varied significantly upon the initial application of voltage but improved to nearly the same level after helium and krypton gas conditioning, exhibiting less than 10 pA field emission at - 225kV bias voltage with a 50 mm cathode/anode gap, corresponding to a field strength ? 13 MV/m. Field emission could be reduced with either krypton or helium, but there were conditions related to gas choice, voltage and field strength that were more favorable than others. The field emission characteristics of niobium electrodes were compared to those of stainless steel electrodes using a DC high voltage field emission test apparatus. Out of 8 electrodes (6 niobium and 2 stainless steel), the best niobium electrode performed better than the best stainless steel electrodes. Large grain niobium exhibited no measurable field emission (< 10 pA) at 225 kV with 20 mm cathode/anode gap, corresponding to a field strength of 18.7 MV/m. Surface evaluation of all electrodes suggested no correlation between the surface roughness and the field emission current. Removing surface particulate contaminations and protrusions using an effective polishing and cleaning technique helps to prevent field emission. Mechanical polishing using silicon carbide paper and diamond paste is a common method of obtaining a mirror like surface finish on the cathode electrodes. However, it sometimes results rolled-over tips and embedded contamination. A different polishing technique was considered: electropolishing. Three stainless steel cathode electrodes with different initial surface roughness were electropolished by a commercial vendor, and evaluated inside a high voltage test stand. They exhibited less field emission than the diamond paste polished electrodes at the initial application of high voltage; but they were less receptive to ion implantation, which is a beneficial aspect of gas conditioning that serves to increase the work function of the cathode surface. Ultimately, the electropolished electrodes exhibited more field emission than diamond-paste polished electrodes.

Bastaninejad, Mahzad↗
DOE OSTI2017

Conceptual design of a hybrid neutron-gamma detector for study of β-delayed neutrons at the RIB facility of RIKEN

Here, the conceptual design of the BRIKEN neutron detector at the radioactive ion beam factory (RIBF) of the RIKEN Nishina Center is reported. The BRIKEN setup is a complex system aimed at detecting heavy-ion implants, β particles, γ rays and β-delayed neutrons. The whole setup includes the Advanced Implantation Detection Array (AIDA), two HPGe Clover detectors and up to 166 3 He-filled counters embedded in a high-density polyethylene moderator. The design is quite complex due to the large number and different types of 3 He-tubes involved and the additional constraints introduced by the ancillary detectors for charged particles and γ rays. This article reports on a novel methodology developed for the conceptual design and optimisation of the 3 He-counter array, aiming for the best possible performance in terms of neutron detection. The algorithm is based on a geometric representation of two selected detector parameters of merit, namely, the average neutron detection efficiency and the efficiency flatness as a function of a reduced number of geometric variables. The response of the neutron detector is obtained from a systematic Monte Carlo simulation implemented in GEANT4. The robustness of the algorithm allowed us to design a versatile detection system, which operated in hybrid mode includes the full neutron counter and two clover detectors for high-precision gamma spectroscopy. In addition, the system can be reconfigured into a compact mode by removing the clover detectors and re-arranging the 3 He tubes in order to maximize the neutron detection performance. Both operation modes shows a rather flat and high average efficiency. In summary, we have designed a system which shows an average efficiency for hybrid mode ( 3 He tubes + clovers) of 68.6% and 64% for neutron energies up to 1 and 5 MeV, respectively. For compact mode (only 3 He tubes), the average efficiency is 75.7% and 71% for neutron energies up to 1 and 5 MeV, respectively. The performance of the BRIKEN detection system has been also quantified by means of Monte Carlo simulations with different neutron energy distributions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Silicon Oxide‐Rich Diamond‐Like Carbon: A Conformal, Ultrasmooth Thin Film Material with High Thermo‐Oxidative Stability

Abstract Silicon oxide‐containing diamond‐like carbon (a‐C:H:Si:O) films are a promising class of protective coatings for environmentally‐demanding applications owing to their lower residual stresses and superior thermal stability and oxidation resistance relative to undoped diamond‐like carbon. However, existing versions of a‐C:H:Si:O deposited by traditional methods such as plasma‐enhanced chemical vapor deposition (PECVD) undergo substantial degradation and oxidation at temperatures above 250 °C. This, together with the difficulty of PECVD in depositing conformal coatings on complex geometries such as high‐aspect‐ratio features, has limited the applicability of a‐C:H:Si:O. Here, the unique capabilities of plasma immersion ion implantation and deposition (PIIID) to grow silicon oxide‐rich diamond‐like carbon materials that are ultrasmooth, continuous, and conformal on high‐aspect‐ratio topographies are explored. The high concentration of silicon and oxygen in PIIID‐grown films (23 ± 5 at.% and 11 ± 4 at.%, respectively) is unrivalled for this class of materials, and drastically increases the resistance to oxidation at high temperatures, compared with PECVD‐grown films. The results open the path for using a‐C:H:Si:O in applications involving exposure of materials to extreme environments.

Mangolini, Filippo↗
DOE OSTI2025

High Radiation Resistance in the Binary W‐Ta System Through Small V Additions: A New Paradigm for Nuclear Fusion Materials

Abstract Refractory High‐Entropy Alloys (RHEAs) are promising candidates for structural materials in nuclear fusion reactors, where W‐based alloys are currently leading. Fusion materials must withstand extreme conditions, including i) severe radiation damage from energetic neutrons, ii) embrittlement due to H and He ion implantation, and iii) exposure to high temperatures and thermal gradients. Recent RHEAs, such as WTaCrV and WTaCrVHf, have shown superior radiation tolerance and microstructural stability compared to pure W, but their multi‐element compositions complicate bulk fabrication and limit practical use. In this study, it is demonstrated that reducing alloying elements in RHEAs is feasible without compromising radiation tolerance. Herein, two Highly Concentrated Refractory Alloys (HCRAs) − W 53 Ta 44 V 3 and W 53 Ta 42 V 5 (at.%) − were synthesized and investigated. We found that small V additions significantly influence the radiation response of the binary W–Ta system. Experimental results, supported by ab‐initio Monte Carlo simulations and machine‐learning‐driven molecular dynamics, reveal that minor variations in V content enhance Ta–V chemical short‐range order (CSRO), improving radiation resistance in the W 53 Ta 42 V 5 HCRA. By focusing on reducing chemical complexity and the number of alloying elements, the conventional high‐entropy alloy paradigm is challenged, suggesting a new approach to designing simplified multi‐component alloys with refractory properties for thermonuclear fusion applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells

This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714mV and saturation current density J0b of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids, this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers.

14 SOLAR ENERGY↗
DOE OSTI2021

Algorithm advances and applications of time‐dependent first‐principles simulations for ultrafast dynamics

Abstract Far from equilibrium phenomenon is a central theme of contemporary material research. Such phenomenon can exhibit itself in atomic structure and dynamics, but very often it also happens as non‐equilibrium phenomenon in the electronic structure. In ab initio material simulation, density functional theory (DFT) has played an essential role in studying electronic ground state problems. For excited states, besides many‐body perturbation theory, another powerful tool is the time dependent DFT (TDDFT) method. In particular, the real‐time TDDFT (rt‐TDDFT) method can be used to simulate many non‐equilibrium phenomena directly. Here we introduce our works on some algorithm advances based on our recently rt‐TDDFT method. This method uses the plane‐wave basis set, and significantly accelerates its efficiency by increasing the time step from 0.1–1 as in traditional methods to 0.2–0.5 fs. The noncollinear magnetic moments and spin–orbit coupling have also been included in our rt‐TDDFT method. Furthermore, a Boltzmann‐TDDFT algorithm has been developed to solve the hot carrier overheating problem in Ehrenfest dynamics, and a natural orbital branching algorithm has been developed to overcome the mean‐field approximation in Ehrenfest dynamics nuclear trajectory, thus allows stochastic multiple paths in chemical reactions. Utilizing these methods, we have studied the photoinduced ultrafast demagnetization, ultrafast phase transition, energy transfer between plasmon and hot carriers, as well as the high‐energy ion implantation and low‐energy atomic diffusion in semiconductors. We believe the tools as the ones introduced here can enable us to study a wide range of phenomena which are of great interest in modern day material research. This article is categorized under: Structure and Mechanism > Computational Materials Science Electronic Structure Theory > Ab Initio Electronic Structure Methods Electronic Structure Theory > Density Functional Theory

Liu, Wen‐Hao↗
DOE OSTI2024

The atomic-level structure and stability of interfaces of Pt nanoparticles in alumina: An experimental and computational evaluation

The atomic-level structure of interfaces between Pt and a transition form of Al2O3 were studied using a combination of electron microscopy and first principles calculations. A model system of Pt nanoprecipitates in Al2O3 were formed in sapphire wafers via high-energy ion implantation of Pt followed by thermal annealing at 1000 °C in air. The Pt nanoparticles took the form of tetrahedra and truncated tetrahedra primarily bound by {111}Pt facets. The high prevalence of these facets motivated the development of density functional theory (DFT) based models of (111)Pt interfaces with six different chemical terminations of ( 2 ¯ 01 ) θ-alumina. The atomic-level structure of the Pt/Al2O3 interfaces was characterized with aberration-corrected scanning transmission electron microscopy (STEM) and the experimental images were compared to STEM image simulations of the DFT models. The model interface with Pt bonded to oxygen-terminated θ-Al2O3, with the Pt located on top of the O and with an underlying layer of octahedral Al, provided the best match to the experimental images. This interfacial termination is also the most stable for the thermal annealing conditions used based on thermodynamic calculations of the interfacial energy as a function of temperature and oxygen partial pressure. This experimentally verified model provides a basis for improving models of Pt/γ-alumina interfaces.

Clauser, A L↗
DOE OSTI2022

n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication

The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both when selecting the semiconductor materials as well as the metal contacts. A homojunction based on a single semiconductor simplifies this task, as energy levels of the p-type and n-type materials are already fairly similar, allowing for easier selection of contacts. Traditionally, homojunctions rely on doping of a bulk semiconductor to achieve p- and n-type transport through controlled addition of aliovalent dopants via energy-intensive processes such as ion implantation or thermal annealing. Exact control of doping in nanocrystalline semiconductors is significantly more challenging, due to self-purification effects. However, owing to their large surface areas, surface moieties can be utilized to both dope the nanostructures as well as tune their energy levels. Here, we present a facile technique based on an isoelectronic surface dopant in order to achieve p- and n-type materials based on the same semiconductor. We show that thin p-type colloidal Bi 2 Te 3 nanowires can be switched to n-type through surface functionalization, thus increasing the availability of new nanocrystalline solution-processable p-n homojunctions.

42 ENGINEERING↗
DOE OSTI2019

Density estimation techniques for multiscale coupling of kinetic models of the plasma material interface

In this work we analyze two classes of Density-Estimation techniques which can be used to consistently couple different kinetic models of the plasma-material interface, intended as the region of plasma immediately interacting with the first surface layers of a material wall. In particular, we handle the general problem of interfacing a continuum multi-species Vlasov-Poisson-BGK plasma model to discrete surface erosion models. The continuum model solves for the energy-angle distributions of the particles striking the surface, which are then driving the surface response. A modification to the classical Binary-Collision Approximation (BCA) method is here utilized as a prototype discrete model of the surface, to provide boundary conditions and impurity distributions representative of the material behavior during plasma irradiation. The numerical tests revealed the superior convergence properties of Gaussian Mixture Models over Kernel Density Estimation methods, with Gaussian Mixtures and Epanechnikov-KDEs both being up to two orders of magnitude faster than Gaussian-KDEs. The methodology here presented allows a self-consistent treatment of the plasma-material interface in magnetic fusion devices, including both the near-surface plasma (plasma sheath and presheath) in magnetized conditions, and surface effects such as sputtering, back-scattering, and ion implantation. The same coupling techniques can also be utilized for other discrete material models such as Molecular Dynamics.

42 ENGINEERING↗
DOE OSTI2016

Helium sequestration at nanoparticle-matrix interfaces in helium + heavy ion irradiated nanostructured ferritic alloys

Here we irradiated four ferritic alloys with energetic Fe and He ions: one castable nanostructured alloy (CNA) containing Ti-W-Ta-carbides, and three nanostructured ferritic alloys (NFAs). The NFAs were: 9Cr containing Y-Ti-O nanoclusters, and two Fe-12Cr-5Al NFAs containing Y-Zr-O or Y-Hf-O clusters. All four were subjected to simultaneous dual-beam Fe + He ion implantation (650 °C, ~50 dpa, ~15 appm He/dpa), simulating fusion-reactor conditions. Examination using scanning/transmission electron microscopy (STEM) revealed high-number-density helium bubbles of ~8 nm, ~10 21 m -3 (CNA), and of ~3 nm, 10 23 m -3 (NFAs). STEM combined with multivariate statistical analysis data mining suggests that the precipitate-matrix interfaces in all alloys survived ~50 dpa at 650 °C and serve as effective helium trapping sites. All alloys appear viable structural material candidates for fusion or advanced fission energy systems. Finally, among these developmental alloys the NFAs appear to sequester the helium into smaller bubbles and away from the grain boundaries more effectively than the early-generation CNA.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Microstructurally informed synchrotron x-ray analysis revealing helium defect transitions in ultrafine grained tungsten

The formation of insoluble gaseous defects in materials due to nuclear transmutation or ion implantation involves the diffusion of impurity atoms to form atomic defect clusters that coalesce into bubbles or cavities and ultimately degrade the material properties. Transmission electron microscopy (TEM) is limited in its ability to resolve sub-nanometer gas clusters whereas X-ray diffraction (XRD) provides information pertaining to local atomic changes. Here, in this study, helium (He) implanted ultrafine grained tungsten is explored through a multimodal defect characterization campaign combining TEM-informed Small Angle X-ray Scattering (SAXS) analysis, XRD lattice parameter measurements, and nanoscale He cluster quantification from a region of reciprocal space accessible via Wide Angle X-ray Scattering (WAXS). Moderate elevated temperature implantations are shown to produce high concentrations of sub-nanoscale He clusters and small, homogeneously distributed cavities, which collectively are linked to lattice expansion and further substantiated through complementary atomistic simulations. Increased implantation temperatures encourage the diffusion of these defects to the grain boundaries (GBs), leading to lattice relaxation and the growth of large GB cavities manifesting as bimodal size distributions in the SAXS analysis. Overall, our results demonstrate the utility of multimodal synchrotron X-ray analysis in bridging the gap between microscale He cavity quantification and atomic-scale defect analysis.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Helium bubble evolution in a Zr–Sn–Nb–Fe–Cr alloy during post-annealing: An in-situ investigation

The formation of helium bubbles is considered to be detrimental to the mechanical performance of the nuclear materials. The growth behaviors of helium bubbles in a helium ion implanted Zr–Sn–Nb–Fe–Cr alloy with respect to the helium fluence and subsequently annealing procedure were investigated by in-situ transmission electron microscopy. In the as-implanted sample, the measured size distributions of the helium bubbles are consistent with the simulated helium concentrations. Moreover, the mean size of the helium bubbles increases with the increase of the irradiation temperatures and the helium fluence. The in-situ heating study performed in a transmission electron microscope indicates that the mean size of the helium bubbles increase slowly below 923 K and dramatically above 923 K. The coarsening mechanism of the helium bubbles in the alloy is suggested based on the study. - Highlights: • Helium bubble growth in zirconium with annealing was in-situ investigated in TEM. • The mean helium bubble size increase with helium fluence and annealing temperature. • Helium bubble size distribution is same as that of helium concentration by SRIM. • Mean bubble size increases slowly and quickly with temperature below and above 923 K. • The growth mechanism of the helium bubbles in Zr alloy has been discussed.

36 MATERIALS SCIENCE↗