Search NASA⌕ Search

SEARCH · Search NASA

Results for “SWITCHING FUNCTION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

A single-cell atlas of the bobtail squid visual and nervous system highlights molecular principles of convergent evolution

Abstract The cephalopod and vertebrate visual systems are a textbook example of convergent evolution with unknown molecular underpinnings. Here we characterize 98,537 single-cell transcriptomes in the bobtail squidEuprymna berryito understand how the cephalopod retina and optic lobes relate to the vertebrate retina. We confirm the overall relative simplicity of the cephalopod retina but identify two related photoreceptor cell subtypes expressing distinct r-opsins. By contrast, the adult optic lobe contains a diverse repertoire of neuronal and glial cell types, with a predominance of dopaminergic neurons. We show that cephalopod-specific gene duplicates probably contributed to this cell type diversification. Comparing neuronal cell population in the optic lobes of hatchlings and adults, we reveal a switch towards dopaminergic neurotransmitter usage with age, indicative of a maturation process. We further identify an FMRF-amide-based retrograde signal from the optic lobe towards the retina that supports the functional analogy of the cephalopod optic lobe cortex and the vertebrate inner retina in visual signal processing from a molecular standpoint. Finally, comparative analyses with vertebrate and arthropod cells suggest a scenario in which two photoreceptor types and two neuronal populations may have already been present in the eye of the bilaterian ancestor.

Environmental Sciences & Ecology↗
NASA NTRS1984

Surface and allied studies in silicon solar cells

Significant improvements were made in the short-circuit current-decay method of measuring the recombination lifetime tau and the back surface recombination velocity S of the quasineutral base of silicon solar cells. The improvements include a circuit implementation that increases the speed of switching from the forward-voltage to the short-circuit conditions. They also include a supplementation of this method by some newly developed techniques employing small-signal admittance as a function of frequency omega. This supplementation is highly effective for determining tau for cases in which the diffusion length L greatly exceeds the base thickness W. Representative results on different solar cells are reported. Some advances made in the understanding of passivation provided by the polysilicon/silicon heterojunction are outlined. Recent measurements demonstrate that S 10,000 cm/s derive from this method of passivation.

Lindholm, F. A.↗
NASA NTRS1993

Multi-beam laser altimeter

Laser altimetry provides a high-resolution, high-accuracy method for measurement of the elevation and horizontal variability of Earth-surface topography. The basis of the measurement is the timing of the round-trip propagation of short-duration pulses of laser radiation between a spacecraft and the Earth's surface. Vertical resolution of the altimetry measurement is determined primarily by laser pulsewidth, surface-induced spreading in time of the reflected pulse, and the timing precision of the altimeter electronics. With conventional gain-switched pulses from solid-state lasers and sub-nsec resolution electronics, sub-meter vertical range resolution is possible from orbital attitudes of several hundred kilometers. Horizontal resolution is a function of laser beam footprint size at the surface and the spacing between successive laser pulses. Laser divergence angle and altimeter platform height above the surface determine the laser footprint size at the surface, while laser pulse repetition-rate, laser transmitter beam configuration, and altimeter platform velocity determine the space between successive laser pulses. Multiple laser transitters in a singlaltimeter instrument provide across-track and along-track coverage that can be used to construct a range image of the Earth's surface. Other aspects of the multi-beam laser altimeter are discussed.

Bufton, Jack L.↗
NASA NTRS2004

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Lebron-Velilla, Ramon C.↗
DOE OSTI2020

Resonance Suppression based on Predictive Control of Grid-following Inverters with LCL Filter in Weak Grid Condition

This paper presents an effective resonance suppression control when grid interactive inverter with LCL filter experience weak grid conditions. The resonance suppression mechanism is based on finite-set model predictive control (FSMPC) with adaptive cost function to alter the controller objectives seamlessly. The large parasitic impedance and low short circuit ratio (SCR) of weak grid challenges the operation of gridconnected inverters. Specifically, the LCL filter resonance may get excited, resulting in collapse of the inverter operation. To address this issue, an effective active damping approach is implemented in the proposed control. In the proposed active damping scheme for resonance suppression, the feedback currents are switched based on the operating conditions of inverter. During the stiff grid conditions, grid current serves as feedback to the controller. While in the weak grid conditions, the inverter current is selected as feedback signal. The toggling action between these two feedback currents is determined by comparing moving RMS of grid current with threshold current as constraint in the cost function of the proposed MPC scheme. The threshold current for toggling action is based on the reference active and reactive power setpoints plus an acceptable band of variation. The theoretical analysis is verified by several case studies.

Umar, Muhammad Farooq↗
DOE OSTI2023

Investigation of local distortion effects on X-ray absorption of ferroelectric perovskites from first principles simulations

Understanding the role of ferroelectric polarization in modulating the electronic and structural properties of crystals is critical for advancing these materials for overcoming various technological and scientific challenges. However, due to difficulties in performing experimental methods with the required resolution, or in interpreting the results of methods therein, the nanoscale morphology and response of these surfaces to external electric fields has not been properly elaborated. Here, in this work, we investigate the effect of ferroelectric polarization and local distortions in a BaTiO 3 perovskite, using two widely used computational approaches which treat the many-body nature of X-ray excitations using different philosophies, namely the many-body, delta-self-consistent-field determinant (mb-ΔSCF) and the Bethe–Salpeter equation (BSE) approaches. We show that in agreement with our experiments, both approaches consistently predict higher excitations of the main peak in the O–K edge for the surface with upward polarization. However, the mb-ΔSCF approach mostly fails to capture the L 2,3 separations at the Ti–L edge, due to the absence of spin–orbit coupling in Kohn–Sham density functional theory (KS-DFT) at the generalized gradient approximation level. On the other hand, and most promising, we show that application of the GW/BSE approach successfully reproduces the experimental XAS, both the relative peak intensities as well as the L 2,3 separations at the Ti–L edges upon ferroelectric switching. Thus simulated XAS is shown to be a powerful method for capturing the nanoscale structure of complex materials, and we underscore the need for many-body perturbation approaches, with explicit consideration of core-hole and multiplet effects, for capturing the essential physics in these systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Intrinsic synaptic plasticity of ferroelectric field effect transistors for online learning

Nanoelectronic devices emulating neuro-synaptic functionalities through their intrinsic physics at low operating energies is imperative toward the realization of brain-like neuromorphic computers. In this work, we leverage the non-linear voltage dependent partial polarization switching of a ferroelectric field effect transistor to mimic plasticity characteristics of biological synapses. Here, we provide experimental measurements of the synaptic characteristics for a 28nm high-k metal gate technology based device and develop an experimentally calibrated device model for large-scale system performance prediction. Decoupled read-write paths, ultra-low programming energies and the possibility of arranging such devices in a cross-point architecture demonstrate the synaptic efficacy of the device. Our hardware-algorithm co-design analysis reveals that the intrinsic plasticity of the ferroelectric devices has potential to enable unsupervised local learning in edge devices with limited training data

42 ENGINEERING↗
DOE OSTI2023

Hybrid stochastic synapses enabled by scaled ferroelectric field-effect transistors

Achieving brain-like density and performance in neuromorphic computers necessitates scaling down the size of nanodevices emulating neuro-synaptic functionalities. However, scaling nanodevices results in reduction of programming resolution and emergence of stochastic non-idealities. While prior work has mainly focused on binary transitions, in this work, we leverage the stochastic switching of a three-state ferroelectric field-effect transistor to implement a long-term and short-term two-tier stochastic synaptic memory with a single device. Experimental measurements are performed on a scaled 28 nm high-k metal gate technology-based device to develop a probabilistic model of the hybrid stochastic synapse. In addition to the advantage of ultra-low programming energies afforded by scaling, our hardware–algorithm co-design analysis reveals the efficacy of the two-tier memory in comparison to binary stochastic synapses in on-chip learning tasks—paving the way for algorithms exploiting multi-state devices with probabilistic transitions beyond deterministic ones.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

A VSM-Based DER Dispatch MINLP for Volt-VAR Control in Unbalanced Power Distribution Systems

This paper presents an optimal dispatch algorithm to coordinate customer-owned controllable loads and smart solar inverters with utility-owned voltage regulators and capacitors to meet voltage control objectives. The optimization problem is formulated as a mixed-integer nonlinear programming (MINLP) problem. A voltage sensitivity matrix (VSM) is used to linearize the effect of control actions on the voltage at customer nodes when solving the MINLP. The VSM is recalculated at each time step to improve the computational accuracy. Both discrete switching actions of the capacitor and VRs and the continuous adjustment of real and reactive power from load and smart inverters are considered in the MINLP volt-var problem formulation. The objective function minimizes the cost of all control actions and the magnitude of voltage fluctuations from the previous time period. Constraints ensure that the voltage at each node is maintained within ANSI limits and the feeder power factor is controlled within the desired range. The algorithm is tested using an actual 3-phase unbalanced distribution feeder model. Simulation results demonstrate that the proposed algorithm is computationally feasible on real circuits and improves voltage control while minimizing operational costs.

McEntee, Catie↗
DOE OSTI2019

Effective Velocity of the State Switching Front in a Quasi-One-Dimensional Nanosystem upon Multiple New-Phase Domain Formation

The kinetics of state switching fronts plays an important role in controlling nanodevices and the properties of many quasi-one-dimensional objects in physics, chemistry, and biology. In active media, this process is accompanied by the interaction of the state switching front with excitations in the bulk of the material. The propagation of the metastable-state switching front from the sample boundary with the absorption of spontaneously forming new-phase domains in the bulk is considered. The corresponding statistical-kinetic problem is solved by calculating the distribution functions of the “relay-race” path lengths and travel times for the edge-domain boundary. The related problem of the influence of uncontrolled noise on the propagation of signals in transmission lines is discussed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1984

Electronic Switching Spherical Array (ESSA) antenna systems

ESSA (Electronic Switching Spherical Array) is an antenna system conceived, developed and qualified for linking satellite data transmissions with NASA's tracking and data relay satellites (TDRSS) and tracking and data acquisition satellites (TDAS). ESSA functions in the S band frequency region, cover 2 pi or more steradians with directional gain and operates in multiple selectable modes. ESSA operates in concert with the NASA's TDRS standard transponder in the retrodirective mode or independently in directional beam, program track and special modes. Organizations and projects to the ESSA applications for NASA's space use are introduced. Coverage gain, weight power and implementation and other performance information for satisfying a wide range of data rate requirements are included.

Hockensmith, R. P.↗
NASA NTRS1998

Control of Telerobots with Variable Communication Delay

Ths paper proposes two solutions for the control of telerobots, in which master and slave are connected through a communication system that introduces a variable delay. This is the typical case of packet-switched networks (e.g. Internet), in which the delay varies in an unpredictible way.

stabilization of telerobots controllers Lyapunov f↗
NASA NTRS1991

Description of real-time Ada software implementation of a power system monitor for the Space Station Freedom PMAD DC testbed

The Ada language software development to perform the electrical system monitoring functions for the NASA Lewis Research Center's Power Management and Distribution (PMAD) DC testbed is described. The results of the effort to implement this monitor are presented. The PMAD DC testbed is a reduced-scale prototype of the electrical power system to be used in the Space Station Freedom. The power is controlled by smart switches known as power control components (or switchgear). The power control components are currently coordinated by five Compaq 382/20e computers connected through an 802.4 local area network. One of these computers is designated as the control node with the other four acting as subsidiary controllers. The subsidiary controllers are connected to the power control components with a Mil-Std-1553 network. An operator interface is supplied by adding a sixth computer. The power system monitor algorithm is comprised of several functions including: periodic data acquisition, data smoothing, system performance analysis, and status reporting. Data is collected from the switchgear sensors every 100 milliseconds, then passed through a 2 Hz digital filter. System performance analysis includes power interruption and overcurrent detection. The reporting mechanism notifies an operator of any abnormalities in the system. Once per second, the system monitor provides data to the control node for further processing, such as state estimation. The system monitor required a hardware time interrupt to activate the data acquisition function. The execution time of the code was optimized using an assembly language routine. The routine allows direct vectoring of the processor to Ada language procedures that perform periodic control activities. A summary of the advantages and side effects of this technique are discussed.

Ludwig, Kimberly↗
DOE OSTI2025

Switching of Magnetic Order via Non‐Magnetic Al Addition in FeCoNiMnAl x Films

Magnetic high entropy alloys (HEAs) consisting of 3 d transition metals offer an exciting platform to explore novel magnetic phases as they often house competing exchange interactions in combination with random site disorders. In this work, a sensitive and tunable magnetic order is demonstrated in sputtered single-layer FeCoNiMnAl x films, as a function of non-magnetic Al addition, along with an unexpected exchange bias effect. Thin films of 50 nm FeCoNiMn exhibit a face-centered-cubic ( fcc ) phase, reentrant spin glass (SG) transition near 100 K, and a large exchange bias of over 500 Oe after field-cooling to 5 K. The exchange bias is increased to 930 Oe through a small addition of 5 at.% Al. Further Al addition to 12 at.% results in a body-centered-cubic ( bcc ) phase, coinciding with a large increase in the saturation magnetization, decrease of exchange bias to 50 Oe, and suppression of SG behavior. The change in magnetic order across the Al-induced structural transformation is mediated by the switching of Mn ground state from AF to FM, which is supported by first-principles calculations and experimentally confirmed via X-ray magnetic circular dichroism. These results open up new HEA strategies for explorations of novel magnetic phases.

competing exchange interactions↗
DOE OSTI2020

Two-Dimensional Molecular Charge Density Waves in Single-Layer-Thick Islands of a Dirac Fermion System

Charge density waves have been intensely studied in inorganic materials such as transition metal dichalcogenides however its counterpart in organic materials has yet to be explored in detail. Here we report the finding of a robust two dimensional charge density waves in molecular layers formed by α-(BEDT-TTF) 2 -I 3 on a Ag(111) surface. Low temperature scanning tunnelling microscopy images of a multi-layer thick α-(BEDT-TTF) 2 -I 3 on Ag(111) substrate reveal coexistence of 5a0 x 5a0 and √31 a0 x √31 a0 R9° charge density wave patterns commensurate with the underlying molecular lattice at 80 K. Both charge density wave patterns remain in nano-size molecular islands with just a single constituent molecular-layer thickness at 80 K and 5 K. Local tunneling spectroscopy measurements reveal the variation of the gap from 244 meV to 288 meV between the maximum and minimum charge density wave locations. Density functional theory calculations further confirm a vertical positioning of BEDT-TTF molecules in the molecular layer. While the observed charge density wave patterns are stable for the defect sites, they can be reversely switched for one molecular lattice site by means of inelastic tunnelling electron energy transfer with the electron energies exceeding 400 meV using a scanning tunneling microscope manipulation scheme.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Engineering Magnetic Anisotropy and Emergent Multidirectional Soft Ferromagnetism in Ultrathin Freestanding LaMnO 3 Films

We report the combination of small coercive fields and weak magnetic anisotropy makes soft ferromagnetic films extremely useful for nanoscale devices that need to easily switch spin directions. However, soft ferromagnets are relatively rare, particularly in ultrathin films with thicknesses of a few nanometers or less. We have synthesized large-area, high-quality, ultrathin freestanding LaMnO 3 films on Si and found unexpected soft ferromagnetism along both the in-plane and out-of-plane directions when the film thickness was reduced to 4 nm. We argue that the vanishing magnetic anisotropy between the two directions is a consequence of two coexisting magnetic easy axes in different atomic layers of the LaMnO 3 film. Spectroscopy measurements reveal a change in Mn valence from 3+ in the film interior to approximately 2+ at the surfaces where considerable hydrogen infiltration occurs due to the water dissolving process. First-principles calculations show that protonation of LaMnO 3 decreases valence and Our the Mn switches the magnetic easy axis from in-plane to out-of-plane as the Mn valence approaches 2+ from its 3+ bulk value. Our work demonstrates that ultrathin freestanding films can exhibit functional properties that are absent in homogeneous materials, concomitant with their convenient compatibility with Si-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots

Abstract The emerging technology of colloidal quantum dot electronics provides an opportunity for combining the advantages of well-understood inorganic semiconductors with the chemical processability of molecular systems. So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n - and p -channel transistors in a common quantum dot active layer. Here, we demonstrate that by using heavy-metal-free CuInSe 2 quantum dots, we can address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe 2 quantum dots, we realize both p - and n -channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Selective atomic sieving across metal/oxide interface for super-oxidation resistance

Abstract Surface passivation, a desirable natural consequence during initial oxidation of alloys, is the foundation for functioning of corrosion and oxidation resistant alloys ranging from industrial stainless steel to kitchen utensils. This initial oxidation has been long perceived to vary with crystal facet, however, the underlying mechanism remains elusive. Here, using in situ environmental transmission electron microscopy, we gain atomic details on crystal facet dependent initial oxidation behavior in a model Ni-5Cr alloy. We find the (001) surface shows higher initial oxidation resistance as compared to the (111) surface. We reveal the crystal facet dependent oxidation is related to an interfacial atomic sieving effect, wherein the oxide/metal interface selectively promotes diffusion of certain atomic species. Density functional theory calculations rationalize the oxygen diffusion across Ni(111)/NiO(111) interface, as contrasted with Ni(001)/NiO(111), is enhanced. We unveil that crystal facet with initial fast oxidation rate could conversely switch to a slow steady state oxidation.

(S)TEM, oxidizing metals↗