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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Switching and Rectification in Carbon-Nanotube Junctions

Multi-terminal carbon-nanotube junctions are under investigation as candidate components of nanoscale electronic devices and circuits. Three-terminal "Y" junctions of carbon nanotubes (see Figure 1) have proven to be especially interesting because (1) it is now possible to synthesize them in high yield in a controlled manner and (2) results of preliminary experimental and theoretical studies suggest that such junctions could exhibit switching and rectification properties. Following the preliminary studies, current-versus-voltage characteristics of a number of different "Y" junctions of single-wall carbon nanotubes connected to metal wires were computed. Both semiconducting and metallic nanotubes of various chiralities were considered. Most of the junctions considered were symmetric. These computations involved modeling of the quantum electrical conductivity of the carbon nanotubes and junctions, taking account of such complicating factors as the topological defects (pentagons, heptagons, and octagons) present in the hexagonal molecular structures at the junctions, and the effects of the nanotube/wire interfaces. A major component of the computational approach was the use of an efficient Green s function embedding scheme. The results of these computations showed that symmetric junctions could be expected to support both rectification and switching. The results also showed that rectification and switching properties of a junction could be expected to depend strongly on its symmetry and, to a lesser degree, on the chirality of the nanotubes. In particular, it was found that a zigzag nanotube branching at a symmetric "Y" junction could exhibit either perfect rectification or partial rectification (asymmetric current-versus-voltage characteristic, as in the example of Figure 2). It was also found that an asymmetric "Y" junction would not exhibit rectification.

Srivastava, Deepak↗
DOE OSTI2023

Reliability Improvement and Effective Switching Layer Model of Thin-Film MoS 2 Memristors

2D memristors have demonstrated attractive resistive switching characteristics recently but also suffer from the reliability issue, which limits practical applications. Previous efforts on 2D memristors have primarily focused on exploring new material systems, while damage from the metallization step remains a practical concern for the reliability of 2D memristors. Here, the impact of metallization conditions and the thickness of MoS 2 films on the reliability and other device metrics of MoS 2 -based memristors is carefully studied. The statistical electrical measurements show that the reliability can be improved to 92% for yield and improved by ≈16× for average DC cycling endurance in the devices by reducing the top electrode (TE) deposition rate and increasing the thickness of MoS 2 films. Intriguing convergence of switching voltages and resistance ratio is revealed by the statistical analysis of experimental switching cycles. An “effective switching layer” model compatible with both monolayer and few-layer MoS 2 , is proposed to understand the reliability improvement related to the optimization of fabrication configuration and the convergence of switching metrics. In conclusion, the Monte Carlo simulations help illustrate the underlying physics of endurance failure associated with cluster formation and provide additional insight into endurance improvement with device fabrication optimization.

36 MATERIALS SCIENCE↗
DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗
NASA NTRS1977

Reflective liquid crystal light valve with hybrid field effect mode

There is disclosed a high performance reflective mode liquid crystal light valve suitable for general image processing and projection and particularly suited for application to real-time coherent optical data processing. A preferred example of the device uses a CdS photoconductor, a CdTe light absorbing layer, a dielectric mirror, and a liquid crystal layer sandwiched between indium-tin-oxide transparent electrodes deposited on optical quality glass flats. The non-coherent light image is directed onto the photoconductor; this reduces the impedance of the photoconductor, thereby switching the AC voltage that is impressed across the electrodes onto the liquid crystal to activate the device. The liquid crystal is operated in a hybrid field effect mode. It utilizes the twisted nematic effect to create a dark off-state (voltage off the liquid crystal) and the optical birefringence effect to create the bright on-state. The liquid crystal thus modulates the polarization of the coherent read-out or projection light responsively to the non-coherent image. An analyzer is used to create an intensity modulated output beam.

Boswell, Donald D.↗
DOE OSTI2023

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

42 ENGINEERING↗
DOE OSTI2022

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al 2 O 3 /Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.

42 ENGINEERING↗
DOE OSTI2023

Wavelength-tunable infrared chiral metasurfaces with phase-change materials

Optical phase-change materials exhibit tunable permittivity and switching properties during phase transition, which offers the possibility of dynamic control of optical devices. Here, a wavelength-tunable infrared chiral metasurface integrated with phase-change material GST-225 is demonstrated with the designed unit cell of parallelogram-shaped resonator. By varying the baking time at a temperature above the phase transition temperature of GST-225, the resonance wavelength of the chiral metasurface is tuned in the wavelength range of 2.33 µm to 2.58 µm, while the circular dichroism in absorption is maintained around 0.44. The chiroptical response of the designed metasurface is revealed by analyzing the electromagnetic field and displacement current distributions under left- and right-handed circularly polarized (LCP and RCP) light illumination. Moreover, the photothermal effect is simulated to investigate the large temperature difference in the chiral metasurface under LCP and RCP illumination, which allows for the possibility of circular polarization-controlled phase transition. The presented chiral metasurfaces with phase-change materials offer the potential to facilitate promising applications in the infrared regime, such as chiral thermal switching, infrared imaging, and tunable chiral photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Quantum Sensing of Insulator‐to‐Metal Transitions in a Mott Insulator

Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, this paper reports on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. The resistive switching properties of both pristine and ion-irradiated VO 2 thin film devices are studied by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO 2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs nonthermally, well below the transition temperature. Here, the results provide direct evidence for nonthermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.

McLaughlin, Nathan J.↗
DOE OSTI2024

Electrical de-poling and re-poling of relaxor-PbTiO 3 piezoelectric single crystals without heat treatment

Re-poling of unexpected partially depoled piezoelectric materials conventionally needs to be first fully depoled through annealing above their Curie temperature to revive piezoelectric performances. Here, we investigated de-poling and re-poling of Pb(In 1/2 Nb 1/2 )O 3 -Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 single crystals under electric fields at room temperature. We found that alternating current electric fields with amplitudes near the coercive field at low frequencies (<10 Hz) can be employed to successfully depolarize poled crystals at room temperature. We also demonstrated a reversible polarization switching process with a relaxor-PbTiO 3 single crystal ultrasound transducer without device performance degradations. This experimental observation is supported by phase-field simulation, showing that alternating current electric fields can readily induce de-poling at room temperature, while direct current electric fields induce a transient depoled state only within an uncontrollable short period of time. The findings suggest new strategies for unprecedented in-device tailoring of the polarization states of ferroelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effect of boron concentration on local structure and spontaneous polarization in AlBN thin films

The discovery of ferroelectricity in polar wurtzite-based ternary materials, such as Al 1–x B x N, has attracted attention due to their compatibility with complementary metal–oxide–semiconductor processes and potential use in integrated non-volatile memory devices. However, the origin of ferroelectricity and the fundamental control of the polarization switching in these materials are still under intensive investigation but appear to be related to local disorder induced from the alloying. In this work, we report the effect of boron alloying on the local structure of Al 1–x B x N films deposited by magnetron sputtering. Our results reveal a diminished crystalline order as a function of boron concentration, accompanied by a reduction in the spontaneous polarization. The film disorder is primarily associated with the dissimilar bond lengths between Al–N and B–N and the formation of threading dislocations induced by B incorporation in the structure.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry

High thermal and electrical stress, over a period of time tends to cause deterioration of the health of power electronic switches. A huge fraction of research efforts involves the study of power electronic device reliability and development of novel techniques with higher accuracy in health estimation of such devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module. Through this paper, a new method for online condition monitoring of IGBTs and IGBT modules using SSTDR has been proposed. Unlike traditional methods, this research work concentrates at the gate terminals of the device instead of looking at the collector side. In addition, the RL-equivalent circuit to represent a bond wire has been developed for the DUT and simulated in CST Studio Suite to measure the reflection amplitudes. Both the experimental and simulation results have been compared. These results prove that a single measurement is sufficient to predict the failure of the device instead of looking at the traditional precursor parameter. With only two sets of measurements, it is possible to locate the aged device inside a module and detect the number of bond wire lift offs associated to that device.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Roles of temperature, materials, and domain inversion in high-performance, low-bias-drift thin film lithium niobate blue light modulators

We demonstrate a thin film lithium niobate electro-optic modulator operating at 456 nm with an RF voltage-length product of 0.38 V-cm and a bandwidth of 6.9 GHz. We test the dielectric relaxation of the modulator with sweeps of temperature and optical input power, and compare equivalent modulators with electrode materials of Cr-Au, Ti-Au and Al in terms of bias stability and current-voltage characteristics. We demonstrate bias stability over at least 8 hours with Al devices, and show relationships between drift, I-V characteristics and ferroelectric domain switching.

Celik, Oguz Tolga (ORCID:0000000264542306)↗
DOE OSTI2021

Recent Advances in Vertically Aligned Nanocomposites with Tunable Optical Anisotropy: Fundamentals and Beyond

Developing reliable and tunable metamaterials is fundamental to next-generation optical-based nanodevices and computing schemes. In this review, an overview of recent progress made with a unique group of ceramic-based functional nanocomposites, i.e., vertically aligned nanocomposites (VANs), is presented, with the focus on the tunable anisotropic optical properties. Using a self-assembling bottom-up deposition method, the as-grown VANs present great promise in terms of structural flexibility and property tunability. Such broad tunability of functionalities is achieved through VAN designs, material selection, growth control, and strain coupling. The as-grown multi-phase VAN films also present enormous advantages, including wafer scale integration, epitaxial quality, sharp atomic interface, as well as designable materials and geometries. This review also covers the research directions with practical device potentials, such as multiplex sensing, high-temperature plasmonics, magneto-optical switching, as well as photonic circuits.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1972

Investigation of superconducting interactions and amorphous semiconductors

Research papers on superconducting interactions and properties and on amorphous materials are presented. The search for new superconductors with improved properties was largely concentrated on the study of properties of thin films. An experimental investigation of interaction mechanisms revealed no new superconductivity mechanism. The properties of high transition temperature, type 2 materials prepared in thin film form were studied. A pulsed field solenoid capable of providing fields in excess of 300 k0e was developed. Preliminary X-ray measurements were made of V3Si to determine the behavior of cell constant deformation versus pressure up to 98 kilobars. The electrical properties of amorphous semiconducting materials and bulk and thin film devices, and of amorphous magnetic materials were investigated for developing radiation hard, inexpensive switches and memory elements.

Janocko, M. A.↗
NASA NTRS1974

A membrane page composer - Further developments

Membrane page composers were made and were evaluated in a simulated holographic optical memory system. Calculated and experimentally determined electromechanical and optical characteristics of the circular membrane light valves used on the arrays are shown to be in close agreement. Several operating prototypes of 8 x 8 and 16 x 16 elements were produced. Measurements were made of switching time, optical contrast, and dynamic storage time of many cells on the devices. Digital patterns were stored in the arrays. The performance required of the page composer as a component of an optical memory system is considered. The fabrication techniques used can be easily extended to larger arrays.

Cosentino, L. S.↗
NASA NTRS1985

Development of optimized detector/spectrophotometer technology for low background space astronomy missions

This program was directed towards a better understanding of some of the important factors in the performance of infrared detector arrays at low background conditions appropriate for space astronomy. The arrays were manufactured by Aerojet Electrosystems Corporation, Azusa. Two arrays, both bismuth doped silicon, were investigated: an AMCID 32x32 Engineering mosiac Si:Bi accumulation mode charge injection device detector array and a metal oxide semiconductor/field effect transistor (MOS-FET) switched array of 16x32 pixels.

Jones, B.↗
NASA NTRS1990

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗
NASA NTRS1991

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗