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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Temporal change in the electromechanical properties of dielectric elastomer minimum energy structures

Dielectric elastomer minimum energy structures (DEMES) are soft electronic transducers and energy harvesters with potential for consumer goods. The temporal change in their electromechanical properties is of major importance for engineering tasks. Therefore, we study acrylic DEMES by impedance spectroscopy and by optical methods for a total time period of approx. 4.5 months. We apply either compliant electrodes from carbon black particles only or fluid electrodes from a mixture of carbon black particles and silicone oil. From the measurement data, the equivalent series capacitances and resistances as well as the bending angles of the transducers are obtained. We find that the equivalent series capacitances change in average between −12 %/1000 h and −4.0 %/1000 h, while the bending angles decrease linearly with slopes ranging from −15 %/1000 h to −7 %/1000 h. Transducers with high initial bending angles and electrodes from carbon black particles show the smallest changes of the electromechanical characteristics. The capacitances decrease faster for DEMES with fluid electrodes. Some DEMES of this type reveal huge and unpredictable fluctuations of the resistances over time due to the ageing of the contacts. Design guidelines for DEMES follow directly from the observed transient changes of their electromechanical performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Modifying the characteristics of carbon nanotubes grown on metallic substrates for ultracapacitor applications

This paper reports the design, fabrication, and testing of carbon nanotube (CNT)-based ultracapacitor electrodes and provides quantitative results, showing that total electrode surface area—and, correspondingly, the total cell capacitance—is highly sensitive to the amount of catalyst material deposited prior to CNT growth. We deposit between 0.6 and 1.0 nm of iron catalyst on metallic (tungsten) substrates and synthesized vertically aligned CNT forests directly by thermal chemical vapor deposition. A capacitance maximum is observed with electrodes prepared with 0.8 nm of catalyst. Geometrical arguments based on average CNT diameter and areal density are used to corroborate this result. The CNTs' differential capacitance is found to be independent of their areal density, mean diameter, length, and the amount of catalyst used to grow them.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔV{sub th}, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness t{sub D} and barrier thickness t{sub B}, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔN{sub it}, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔN{sub it} is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Determination of the dissipation in superconducting Josephson junctions

The results relative to macroscopic quantum tunneling rate, out of the metastable state of Josephson junctions, are examined in view of determining the effect of dissipation. We adopt a simple criterion in accordance to which the effect of dissipation can be evaluated by analyzing the shortening of the semiclassical traversal time of the barrier. In almost all the considered cases, especially those with relatively large capacitance values, the relative time shortening turns out to be about 20% and with a corresponding quality factor Q ≃ 5.5. However, beyond the specific cases here considered, still in the regime of moderate dissipation, the method is applicable also to different situations with different values of the quality factor. The method allows, within the error limits, for a reliable determination of the load resistance R{sub L}, the less accessible quantity in the framework of the resistively and capacitively shunted junction model, provided that the characteristics of the junction (intrinsic capacitance, critical current, and the ratio of the bias current to the critical one) are known with sufficient accuracy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Impedance spectroscopic analysis of composite electrode from activated carbon/conductive materials/ruthenium oxide for supercapacitor applications

Activated carbon powders (ACP) were produced from the KOH treated pre-carbonized rubber wood sawdust. Different conductive materials (graphite, carbon black and carbon nanotubes (CNTs)) were added with a binder (polivinylidene fluoride (PVDF)) into ACP to improve the supercapacitive performance of the activated carbon (AC) electrodes. Symmetric supercapacitor cells, fabricated using these AC electrodes and 1 molar H{sub 2}SO{sub 4} electrolyte, were analyzed using a standard electrochemical impedance spectroscopy technique. The addition of graphite, carbon black and CNTs was found effective in reducing the cell resistance from 165 to 68, 23 and 49 Ohm respectively, and increasing the specific capacitance of the AC electrodes from 3 to 7, 17, 32 F g{sup −1} respectively. Since the addition of CNTs can produce the highest specific capacitance, CNTs were chosen as a conductive material to produce AC composite electrodes that were added with 2.5 %, 5 % and 10 % (by weight) electro-active material namely ruthenium oxide; PVDF binder and CNTs contents were kept at 5 % by weight in each AC composite produced. The highest specific capacitance of the cells obtained in this study was 86 F g{sup −1}, i.e. for the cell with the resistance of 15 Ohm and composite electrode consists of 5 % ruthenium oxide.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Anomalous C-V response correlated to relaxation processes in TiO{sub 2} thin film based-metal-insulator-metal capacitor: Effect of titanium and oxygen defects

Capacitance-voltage (C–V) and capacitance-frequency (C–f) measurements are performed on atomic layer deposited TiO{sub 2} thin films with top and bottom Au and Pt electrodes, respectively, over a large temperature and frequency range. A sharp capacitance peak/discontinuity (C–V anomalous) is observed in the C–V characteristics at various temperatures and voltages. It is demonstrated that this phenomenon is directly associated with oxygen vacancies. The C–V peak irreversibility and dissymmetry at the reversal dc voltage are attributed to difference between the Schottky contacts at the metal/TiO{sub 2} interfaces. Dielectric analyses reveal two relaxation processes with degeneration of the activation energy. The low trap level of 0.60–0.65 eV is associated with the first ionized oxygen vacancy at low temperature, while the deep trap level of 1.05 eV is associated to the second ionized oxygen vacancy at high temperature. The DC conductivity of the films exhibits a transition temperature at 200 °C, suggesting a transition from a conduction regime governed by ionized oxygen vacancies to one governed by interstitial Ti{sup 3+} ions. Both the C–V anomalous and relaxation processes in TiO{sub 2} arise from oxygen vacancies, while the conduction mechanism at high temperature is governed by interstitial titanium ions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

High-κ TiO{sub 2} thin film prepared by sol-gel spin-coating method

High-k TiO{sub 2} thin film on p-type silicon substrate was fabricated by a combined sol-gel and spin coating method. Thus deposited titania film had anatase phase with a small grain size of 16 nm and surface roughness of ≅ 0.6 nm. The oxide capacitance (C{sub ox}), flat band capacitance (C{sub FB}), flat band voltage (V{sub FB}), oxide trapped charge (Q{sub ot}), calculated from the high frequency (1 MHz) C-V curve were 0.47 nF, 0.16 nF, − 0.91 V, 4.7x10{sup −12} C, respectively. As compared to the previous reports, a high dielectric constant of 94 at 1 MHz frequency was observed in the devices investigated here and an equivalent oxide thickness (EOT) was 4.1 nm. Dispersion in accumulation capacitance shows a linear relationship with AC frequencies. Leakage current density was found in acceptable limits (2.1e-5 A/cm{sup 2} for −1 V and 5.7e-7 A/cm{sup 2} for +1 V) for CMOS applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

Partial CuInGaSe 2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO x buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Lastly, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

14 SOLAR ENERGY↗
DOE OSTI2015

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Understanding defect distributions in polythiophenes via comparison of regioregular and regiorandom species

Organic photovoltaics (OPVs) are regarded as promising for solar-electric conversion with steadily improving power conversion efficiencies. For further progress, it is crucial to understand and mitigate defect states (traps) residing in the band-gap of OPV materials. In this work, using capacitance measurements, we analyzed two major bands in the density of states (DOS) energy spectra of defects in poly(3-hexylthiophene) (P3HT); regio-regular and regio-random species of P3HT were compared to elucidate the role of morphological disorder. To accurately interpret the obtained DOS profile, trap emission prefactors and activation energy were extracted from temperature dependent capacitance-frequency measurements, while doping, Fermi energy, built-in voltage, and energy levels of the defects were extracted from capacitance-voltage measurements. We identified that the lower energy band—misinterpreted in literature as a defect distribution—stems from free carrier response. The higher energy defect distribution band for regio-random P3HT was an order of magnitude higher than region-regular P3HT, thus stemming from morphological disorder. Impedance spectroscopy was also employed for further comparison of the two P3HT species.

14 SOLAR ENERGY↗
DOE OSTI2016

Electrical and structural characterizations of crystallized Al{sub 2}O{sub 3}/GaN interfaces formed by in situ metalorganic chemical vapor deposition

Al{sub 2}O{sub 3} films were grown in situ by metalorganic chemical vapor deposition at 900 °C on GaN of both Ga- and N-face polarities. High-resolution transmission electron microscopy revealed that the Al{sub 2}O{sub 3} films were crystalline and primarily γ-phase. The Al{sub 2}O{sub 3}/Ga-GaN and Al{sub 2}O{sub 3}/N-GaN interfaces were both atomically sharp, and the latter further exhibited a biatomic step feature. The corresponding current-voltage (J-V) characteristics were measured on a metal-Al{sub 2}O{sub 3}-semiconductor capacitor (MOSCAP) structure. The leakage current was very high when the Al{sub 2}O{sub 3} thickness was comparable with the size of the crystalline defects, but was suppressed to the order of 1 × 10{sup −8} A/cm{sup 2} with larger Al{sub 2}O{sub 3} thicknesses. The interface states densities (D{sub it}) were measured on the same MOSCAPs by using combined ultraviolet (UV)-assisted capacitance-voltage (C-V), constant capacitance deep level transient spectroscopy (CC-DLTS), and constant capacitance deep level optical spectroscopy (CC-DLOS) techniques. The average D{sub it} measured by CC-DLTS and CC-DLOS were 6.6 × 10{sup 12} and 8.8 × 10{sup 12} cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3}/Ga-GaN and 8.6 × 10{sup 12} and 8.6 × 10{sup 12 }cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3}/N-GaN, respectively. The possible origins of the positive (negative) polarization compensation charges in Al{sub 2}O{sub 3}/Ga-GaN (Al{sub 2}O{sub 3}/N-GaN), including the filling of interface states and the existence of structure defects and impurities in the Al{sub 2}O{sub 3} layer, were discussed in accordance with the experimental results and relevant studies in the literature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Graphene-based tunable non-foster circuit for VHF applications

This paper presents a negative impedance converter (NIC) based on graphene field effect transistors (GFETs) for VHF applications. The NIC is designed following Linvill’s open circuit stable (OCS) topology. The DC modelling parameters of GFET are extracted from a device measured by Meric et al. [IEEE Electron Devices Meeting, 23.2.1 (2010)] Estimated parasitics are also taken into account. Simulation results from Keysight Advanced Design System (ADS) show good NIC performance up to 200 MHz and the value of negative capacitance is directly proportional to the capacitive load. In addition, it has been shown that by varying the supply voltage the value of negative capacitance can also be tuned. The NIC stability has been tested up to 2 GHz (10 times the maximum operation frequency) using Nyquist stability criterion to ensure there are no oscillation issues.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Understanding the pseudocapacitance of RuO 2 from joint density functional theory

Pseudocapacitors have been experimentally studied for many years in electric energy storage. However, first principles understanding of the pseudocapacitive behavior is still not satisfactory due to the complexity involved in modeling electrochemistry. In this paper, we applied joint density functional theory (JDFT) to simulate the pseudocapacitive behavior of RuO 2 , a prototypical material, in a model electrolyte. Additionally, we obtained from JDFT a capacitive curve which showed a redox peak position comparable to that in the experimental cyclic voltammetry (CV) curve. We found that the experimental turning point from double-layer to pseudocapacitive charge storage at low scan rates could be explained by the hydrogen adsorption at low coverage. As the electrode voltage becomes more negative, H coverage increases and causes the surface-structure change, leading to bended –OH bonds at the on-top oxygen atoms and large capacitance. This H coverage-dependent capacitance can explain the high pseudocapacitance of hydrous RuO 2 . In conclusion, our work here provides a first principles understanding of the pseudocapacitance for RuO 2 in particular and for transition-metal oxides in general.

double layer capacitance↗
DOE OSTI2016

Submicrosecond linear pulse transformer for 800 kV voltage with modular low-inductance primary power supply

A pulsed power source with voltage amplitude up to 800 kV for fast charging (350–400 ns) of the forming line of a high-current nanosecond accelerator is developed. The source includes capacitive energy storage and a linear pulse transformer. The linear transformer consists of a set of 20 inductors with circular ferromagnetic cores surrounded by primary windings inside of which a common stock adder of voltage with film-glycerol insulation is placed. The primary energy storage consists of ten modules, each of which is a low-inductance assembly of two capacitors with a capacitance of 0.35 μF and one gas switch mounted in the same frame. The total energy stored in capacitors is 5.5 kJ at the operating voltage of 40 kV. According to test results, the parameters of the equivalent circuit of the source are the following: shock capacitance = 17.5 nF, inductance = 2 μH, resistance = 3.2 Ω.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers

InGaAs/GaAs heterostructures containing quantum wells and δ-doped layers are studied theoretically and experimentally. On the basis of the procedure of self-consistently solving the Schrödinger equation and Poisson equation, the differential capacitance and the apparent electron concentration profiles are numerically calculated for structures with different mutual arrangements of the quantum well and the δ layer. The results of the calculations are compared with the result of analyzing the experimental capacitance-voltage characteristics of the structures. The systematic features of the behavior of the apparent concentration profiles and capacitance-voltage characteristics in relation to the geometric properties of the structure, the temperature, and the doping level are established.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide

The possibilities of using the data of high-frequency measurements of the impedance of metal-oxide-semiconductor structures with an ultrathin insulating layer for determining the parameters of the semiconductor and the tunneling characteristics of the insulator are considered. If the accuracy of the experiment makes it possible to record both the active and reactive impedance components, the thickness of the surface depletion layer, the resistance of the semiconductor base portion, the differential tunnel conductivity of the insulating layer, and the differential tunneling-stimulated current of the generation of electron-hole pairs are calculated using the values of the capacitance and conduction of the structure measured at two frequencies. In the case, where the values of the active component of the impedance is beyond the accuracy of measurements, analysis of the parameters is possible upon four-frequency organization of the experiment from the values of only the capacitances with an increased accuracy of their measurements. A test for the necessary accuracy of data of such an experiment is formulated. If the test fails, it is possible to determine only the capacitance of the surface depletion layer in the semiconductor and, in this case, it is sufficient to implement only the single-frequency experiment.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Using Whole-House Field Tests to Empirically Derive Moisture Buffering Model Inputs

Building energy simulations can be used to predict a building's interior conditions, along with the energy use associated with keeping these conditions comfortable. These models simulate the loads on the building (e.g., internal gains, envelope heat transfer), determine the operation of the space conditioning equipment, and then calculate the building's temperature and humidity throughout the year. The indoor temperature and humidity are affected not only by the loads and the space conditioning equipment, but also by the capacitance of the building materials, which buffer changes in temperature and humidity. This research developed an empirical method to extract whole-house model inputs for use with a more accurate moisture capacitance model (the effective moisture penetration depth model). The experimental approach was to subject the materials in the house to a square-wave relative humidity profile, measure all of the moisture transfer terms (e.g., infiltration, air conditioner condensate) and calculate the only unmeasured term: the moisture absorption into the materials. After validating the method with laboratory measurements, we performed the tests in a field house. A least-squares fit of an analytical solution to the measured moisture absorption curves was used to determine the three independent model parameters representing the moisture buffering potential of this house and its furnishings. Follow on tests with realistic latent and sensible loads showed good agreement with the derived parameters, especially compared to the commonly-used effective capacitance approach. These results show that the EMPD model, once the inputs are known, is an accurate moisture buffering model.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗