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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Towards the Ultimate Multi-Junction Solar Cell using Transfer Printing

Transfer printing is a uniquely enabling technology for the heterogeneous integration of III-V materials grown on dissimilar substrates. In this paper, we present experimental results for a mechanically stacked tandem cell using GaAs and GaSb-based materials capable of harvesting the entire solar spectrum with 44.5% efficiency. We also present the latest results toward developing an ultra-high performance heterogeneous cell, integrating materials grown on GaAs, InP and GaSb platforms.

14 SOLAR ENERGY↗
DOE OSTI2015

Structural and electrophysical properties of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well

A complex investigation of structural and electrical properties of In{sub 0.52}Al{sub 0.48}As/In{sub y}Ga{sub 1−y}As/In{sub 0.52}Al{sub 0.48}As nanoheterostructures on InP substrates containing thin InAs and GaAs inserts in a quantum well (QW) has been performed. The GaAs nanolayers are grown at the QW boundaries between InGaAs and InAlAs layers, while the double InAs inserts are grown in InGaAs layers symmetrically with respect to the QW center. The layer and interface structures have been studied by transmission electron microscopy. It is shown that, when using the proposed epitaxial growth conditions, the introduction of ∼1.2-nm-thick InAs nanoinserts into the InGaAs QW and a ∼1-nm-thick GaAs nanobarrier at the QW boundaries does not induce structural defects. The diffusion of the InAlAs/InGaAs interface (2–3 monolayers) and InAs/InGaAs nanoinsert interface (1–2 monolayers) has been estimated. Measured Hall mobilities and electron concentrations in structures with different combinations of InAs and GaAs inserts have been analyzed using calculated energy band diagrams and electron density distributions. It is found that the photoluminescence spectra of the structures under study have differences caused by specific structural features of coupled QWs (specifically, the change in the In molar fraction due to InAs inserts and the change in the QW thickness due to GaAs transition barriers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

X-ray analysis of multilayer In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As HEMT heterostructures with InAs nanoinsert in quantum well

In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Dynamical Theory of X-Ray Diffraction for Restricted Beams: III. Analysis of Experimental Data for a Porous Crystal

Using the dynamical theory of X-ray diffraction for restricted beams, we have performed quantitative analysis of the structure of an InP(001) porous crystal layer on the basis of experimental data obtained by high-resolution X-ray diffractometry. The parameters of the porous crystal have been determined by simulating coherent and diffuse scattering. The influence of the instrumental function and dynamical effects on the results of investigation has been demonstrated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Investigation of temperature dependence of neutron yield and electron screening potential for the d(d, n){sup 3}He reaction proceeding in deuterides ZrD{sub 2} and TiD{sub 2}

The temperature dependence of the enhancement factor for the dd reaction proceeding in TiD{sub 2} and ZrD{sub 2} is investigated. The experiments were carried out at the Hall pulsed ion accelerator (INP, Polytechnic University, Tomsk, Russia) in the deuteron energy interval 7.0-12.0 keV and at temperatures ranging from 20 to 200 Degree-Sign C. The values obtained for the electron screening potentials indicate that the dd reaction enhancement factor does not depend on the target temperature in the range 20-200 Degree-Sign C. This result contradicts the conclusions drawn by the LUNA Collaboration from their work.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2016

Simulation of electron beam formation and transport in a gas-filled electron-optical system with a plasma emitter

The results of computer simulations of the electron-optical system of an electron gun with a plasma emitter are presented. The simulations are performed using the KOBRA3-INP, XOOPIC, and ANSYS codes. The results describe the electron beam formation and transport. The electron trajectories are analyzed. The mechanisms of gas influence on the energy inhomogeneity of the beam and its current in the regions of beam primary formation, acceleration, and transport are described. Recommendations for optimizing the electron-optical system with a plasma emitter are presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2011

Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76-100% with their surface morphology and electrical properties

The influence of the construction of a metamorphic buffer on the surface morphology and electrical properties of InAlAs/InGaAs/InAlAs nanoheterostructures with InAs content in the active layer from 76 to 100% with the use of the GaAs and InP substrates is studied. It is shown that such parameters as the electron mobility and the concentration, as well as the root-mean-square surface roughness, substantially depend on the construction of the metamorphic buffer. It is established experimentally that these parameters largely depend on the maximal local gradient of the lattice constant of the metamorphic buffer in the growth direction of the layers rather than on its average value. It is shown that, with selection of the construction of the metamorphic buffer, it is possible to form nanostructured surfaces with a large-periodic profile.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Persistent photoconductivity and electron mobility in In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP quantum-well structures

The influence of the width of the quantum well L and doping on the band structure, scattering, and electron mobility in nanoheterostructures with an isomorphic In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well grown on an InP substrate are investigated. The quantum and transport mobilities of electrons in the dimensionally quantized subbands are determined using Shubnikov-de Haas effect measurements. These mobilities are also calculated for the case of ionized-impurity scattering taking into account intersub-band electron transitions. It is shown that ionized-impurity scattering is the dominant mechanism of electron scattering. At temperatures T < 170 K, persistent photoconductivity is observed, which is explained by the spatial separation of photoexcited charge carriers.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well

The specific features of the photoluminescence and the electrical properties of doped nanoheterostructures containing a composite InAlAs/InGaAs/InAlAs quantum well with a thin InAs insert in the middle are studied. The insert thickness is varied in the range from 1.7 to 3.0 nm. It is established that the position of the peaks in the photoluminescence spectra in the photon energy range 0.6–0.8 eV correlates with the InAs insert thickness. Simulation of the band structure shows that the experimentally observed variation in the energy of optical transitions is associated with lowering of the energy of electron and hole states in the quantum well with increasing insert thickness. In the photon energy range 1.24–1.38 eV, optical transitions in the region of the InAlAs buffer-InP substrate interface are observed. The signal photon energy and intensity depend on the features of the formation of this heterointerface and on the conditions of substrate annealing. It is conceived that this is due to the formation of a transition region between the InAlAs buffer and the substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In{sub x}Ga{sub 1−x}As quantum well with InAs inserts

HEMT structures with In{sub 0.53}Ga{sub 0.47}As quantum well are synthesized using molecular-beam epitaxy on InP substrates. The structures are double-side Si δ-doped so that two dimensionally-quantized subbands are occupied. The effect of the central InAs nanoinsert in the quantum well on the electron effective masses m* and mobilities in each subband is studied. For experimental determination of m*, the quantum μ{sub q} and transport μ{sub t} mobilities of the two-dimensional electron gas in each dimensionally-quantized subband, the Shubnikov-de Haas effect is measured at two temperatures of 4.2 and 8.4 K. The electron effective masses are determined by the temperature dependence of the oscillation amplitudes, separating the oscillations of each dimensionally-quantized subband. The Fourier spectra of oscillations are used to determine the electron mobilities μ{sub q} and μ{sub t} in each dimensionally-quantized subband. It is shown that m* decreases as the InAs-nanoinsert thickness d in the In{sub 0.53}Ga{sub 0.47}As quantum well and electron mobilities increase. The maximum electron mobility is observed at the insert thickness d = 3.4 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range

The optical properties of elastically strained semiconductor heterostructures with InGaAs/InGaAlAs quantum wells (QWs), intended for use in the formation of the active region of lasers emitting in the spectral range 1520–1580 nm, are studied. Active regions with varied lattice mismatch between the InGaAs QWs and the InP substrate are fabricated by molecular beam epitaxy. The maximum lattice mismatch for the InGaAs QWs is +2%. The optical properties of the elastically strained InGaAlAs/InGaAs/InP heterostructures are studied by the photoluminescence method in the temperature range from 20 to 140°C at various power densities of the excitation laser. Investigation of the optical properties of InGaAlAs/InGaAs/InP experimental samples confirms the feasibility of using the developed elastically strained heterostructures for the fabrication of active regions for laser diodes with high temperature stability.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors

The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer quality are critical parameters to achieve the optimal characteristics of heterobarrier varactors. The proposed triple-barrier structures of heterobarrier varactors with thin InGaAs strained layers immediately adjacent to an InAlAs/AlAs/InAlAs heterobarrier, mismatched with respect to the InP lattice constant at an AlAs insert thickness of 2.5 nm, provides a leakage current density at the level of the best values for heterobarrier varactor structures with 12 barriers and an insert thickness of 3 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures

The capabilities of a technique based on combined photoluminescence and Raman-spectroscopy measurements upon lateral scanning across the cleaved edge of heterostructures for monitoring the strain profile and the thickness of epitaxial layers are demonstrated. The characteristics of a laser heterostructure with InGaAs/GaAsP quantum wells are investigated by this technique. It is shown that photoluminescence from different layers of the structure can be recorded separately. It is established that both the frequency of the InP-like phonon mode and the photoluminescence energy can be used to determine the composition of the In{sub x}Ga{sub 1–x}P alloy. The two methods yield close results.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength

Room-temperature lasing at a wavelength of 8 μm in multistage quantum-cascade lasers pumped by current pulses is demonstrated. A quantum-cascade laser heterostructure based on the In{sub 0.53}Ga{sub 0.47}As/A{sub l0.48}In{sub 0.5}2As alloy heteropair, matched to an InP substrate, is grown by molecular-beam epitaxy and consists of 50 identical cascades placed in a waveguide with air as the top cladding. A threshold current density of ~5.1 kA/cm{sup 2} at a temperature of 300 K is obtained in ridge lasers with a cavity length of 1.4 mm and a ridge width of 24 μm.

36 MATERIALS SCIENCE↗
DOE OSTI2018

On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures

The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In{sub 0.74}Ga{sub 0.26}As quantum wells and δ-doped In{sub 0.53}Al{sub 0.20}Ga{sub 0.27}As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that p-type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 10{sup 12} cm{sup –2} results in the suppression of nonradiative recombination.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates

Hybrid laser structures with AlGaInAs quantum wells are grown by metalorganic vapor phase epitaxy on Ge/Si(100) “virtual” substrates using GaAs and InP buffer layers. Stimulated emission is achieved under optical pumping of the prepared samples in the range of 1.3–1.5 μm at liquid-nitrogen temperature. The stimulated-emission threshold is 30–70 kW/cm{sup 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon

Data on the growth and physical properties of nanostructures of the type “InAsP insert embedded in InP nanowire (NW)” grown on Si (111) surfaces by Au-assisted molecular-beam epitaxy are presented. It is found that nearly 100%-coherent NWs can be grown with a widely varying surface density. A relationship between the optical and structural properties of the NWs is revealed. It is shown that the NWs under study are formed of a purely wurtzite phase. The suggested technology opens up new opportunities for the integration of direct-gap III–V materials and silicon.

36 MATERIALS SCIENCE↗