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At least 847 records · Page 47

First-principles study on the magnetic properties in Mg doped BiFeO{sub 3} with and without oxygen vacancies

The magnetic properties of Mg-doped BiFeO{sub 3} (BFO) with and without oxygen vacancies are studied through first-principles calculations. The Mg-doping prefers to occupy the ferromagnetic planes and produces an obvious improved magnetization, and the magnetization is linearly enhanced with increasing Mg-doped content, which is consistent with the trend reported in experiment. However, our calculated result is significantly larger than the experimental one, and the reason is revealed that the relative energy differences of various spin-ordering configurations are small. Furthermore, oxygen vacancy in Mg-doped BFO can further enhance the magnetization, while keeping the insulating band gap character. The calculated results imply that the oxygen vacancy in Mg-doped BFO would be an effective way to improve the multiferroicity of BFO.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Confinement-Induced Chiral Edge Channel Interaction in Quantum Anomalous Hall Insulators

In quantum anomalous Hall (QAH) insulators, the interior is insulating but electrons can travel with zero resistance along one-dimensional (1D) conducting paths known as chiral edge channels (CECs). These CECs have been predicted to be confined to the 1D edges and exponentially decay in the two-dimensional (2D) bulk. Here, in this Letter, we present the results of a systematic study of QAH devices fashioned in a Hall bar geometry of different widths under gate voltages. At the charge neutral point, the QAH effect persists in a Hall bar device with a width of only ~7⁢2 nm, implying the intrinsic decaying length of CECs is less than ~3⁢6 nm. In the electron-doped regime, we find that the Hall resistance deviates quickly from the quantized value when the sample width is less than 1 μ⁢m. Our theoretical calculations suggest that the wave function of CEC first decays exponentially and then shows a long tail due to disorder-induced bulk states. Therefore, the deviation from the quantized Hall resistance in narrow QAH samples originates from the interaction between two opposite CECs mediated by disorder-induced bulk states in QAH insulators, consistent with our experimental observations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic coupling at perovskite and rock-salt structured interfaces

We study magnetic coupling between hole-doped manganite layers separated by either a perovskite or a rock-salt barrier of variable thickness. Both the type and the quality of the interface have a strong impact on the minimum critical barrier thickness where the manganite layers become magnetically decoupled. A rock-salt barrier layer only 1 unit cell (0.5 nm) thick remains insulating and is able to magnetically de-couple the electrode layers. The technique can therefore be used for developing high-performance planar oxide electronic devices such as magnetic tunnel junctions and quantum well structures that depend on magnetically and electronically sharp heterointerfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Stability and magnetic behavior of exfoliable nanowire one-dimensional materials

Low-dimensional materials can display enhanced electronic, magnetic, and quantum properties. Here we use the topological scaling algorithm to identify all sufficiently metastable materials in the Materials Project database to identify bulk crystals with one-dimensional (1D) structural motifs: Five hundred fifty-one crystals that are within 50 meV atom –1 of the thermodynamic hull display 1D motifs, where 293 of these contain d-valence elements, which we focus on in this work. After exfoliating nanowires from 263 of these materials and calculating their thermodynamic stability using density functional theory, 103 nanowires meet per-atom and per-Ångström thermodynamic stability criteria. We illustrate for three nanowire systems that a variety of local minima can be present in these systems, demonstrating one case of a Peierls distortion. The wires display a broad diversity of electronic and magnetic properties of these nanowires, with 14 metals, 7 half-metals, and 82 semiconductors and insulators, and 41 nanowires displaying magnetic moments ranging from 0.1 to 5μ B per d-valence species when assuming ferromagnetic order. A subset of these chains are investigated for the impact of magnetic ordering, identifying 1D FeCl 3 to be most stable in an antiferromagnetic state. The electronic and magnetic properties of the identified 1D materials could enable applications in spintronic and quantum devices.

36 MATERIALS SCIENCE↗

Inverse Faraday effect in Mott insulators

The inverse Faraday effect (IFE), where a static magnetization is induced by circularly polarized light, offers a promising route to ultrafast control of spin states. Here we study the IFE in Mott insulators using the Floquet theory. We find two distinct IFE behavior governed by the inversion symmetry. In the Mott insulators with inversion symmetry, we find that the effective magnetic field induced by the IFE couples ferromagnetically to the neighboring spins. While for the Mott insulators without inversion symmetry, the effective magnetic field due to IFE couples antiferromagnetically to the neighboring spins. We apply the theory to the spin-orbit coupled single- and multiorbital Hubbard model that is relevant for the Kitaev quantum spin liquid material and demonstrate that the magnetic interactions can be tuned by light.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electrical, optical, and magnetic properties of Sn doped α-Ga{sub 2}O{sub 3} thin films

We investigated the effect of Sn doping on the optical, electrical, and magneto transport properties of epitaxial α-Ga{sub 2}O{sub 3} thin films grown by mist-Chemical Vapour Deposition. Sn introduces a shallow donor level at ∼0.1 eV and has a high solubility allowing doping up to 10{sup 20 }cm{sup −3}. The lowest obtained resistivity of the films is 2.0 × 10{sup −1 }Ω cm. The Sn doped films with a direct band gap of 5.1 eV remain transparent in the visible and UV range. The electrical conduction mechanism and magneto-transport have been investigated for carrier concentrations below and above the insulator-metal transition. The magnetic properties of the neutral Sn donor and the conduction electrons have been studied by electron spin resonance spectroscopy. A spin S = 1/2 state and C{sub 3V} point symmetry of the neutral Sn donor is found to be in good agreement with the model of a simple Sn{sub Ga} center.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Incommensurate and commensurate antiferromagnetic states in Ca Mn 2 As 2 and Sr Mn 2 As 2 revealed by As 75 NMR

Here, we carried out 75 As nuclear magnetic resonance (NMR) measurements on the trigonal CaMn 2 As 2 and SrMn 2 As 2 insulators exhibiting antiferromagnetic (AFM) ordered states below Néel temperatures T N = 62 and 120 K, respectively. In the paramagnetic state above T N , typical quadrupolar-split 75 As NMR spectra were observed for both systems. The 75 As quadrupolar frequency ν Q for CaMn 2 As 2 decreases with decreasing temperature, while ν Q for SrMn 2 As 2 increases, showing an opposite temperature dependence. In the AFM state, the relatively sharp and distinct 75 As NMR lines were observed in SrMn 2 As 2 and the NMR spectra were shifted to lower fields for both magnetic fields H ∥ c axis and H ∥ a b plane, suggesting that the internal fields B int at the As site produced by the Mn ordered moments are nearly perpendicular to the external magnetic field direction. No obvious distribution of B int was observed in SrMn 2 As 2 , which clearly indicates a commensurate AFM state. In sharp contrast to SrMn 2 As 2 , broad and complex NMR spectra were observed in CaMn 2 As 2 in the AFM state, which clearly shows a distribution of B int at the As site, indicating an incommensurate state. From the analysis of the characteristic shape of the observed spectra, the AFM state of CaMn 2 As 2 was determined to be a two-dimensional incommensurate state where Mn ordered moments are aligned in the ab plane. A possible origin for the different AFM states in the systems was discussed. Both CaMn 2 As 2 and SrMn 2 As 2 show very large anisotropy in the nuclear spin-lattice relaxation rate 1/T 1 in the paramagnetic state. 1/T 1 for H ∥ ab is much larger than that for H ∥ c, indicating strong anisotropic AFM spin fluctuations in both compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Implications of second harmonic generation for hidden order in Sr 2 CuO 2 Cl 2

Sr 2 CuO 2 Cl 2 (SCOC) is a model undoped cuprate with I4/mmm crystallographic symmetry, and a simple magnetic space group CAmca with associated magnetic point group mmm1'. However, recent second harmonic spectroscopy in the antiferromagnetic phase has challenged this picture, suggesting instead a magnetic point group 4/mm'm' that coexists with the antiferromagnetism and breaks the two orthogonal mirror planes containing the tetragonal c axis. Here, we analyze the symmetry of SCOC in light of the second harmonic results, and discuss possible ground states that are consistent with the data.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electron Doping by Charge Transfer at LaFeO 3 /Sm 2 CuO 4 Epitaxial Interfaces

The breakdown of the lattice translational invariance symmetry that occurs at complex oxide interfaces may profoundly modify their electronic structure, leading to interfacial states with properties drastically different from those of the superlattice individual components. The appearance of a conducting two dimensional (2D) electron gas at the interface between two insulating oxides and induced magnetism in a non-magnetic material are just two among many fascinating examples. [ 1 8 ] One of the key factors underlying novel properties is the modifi cation of the doping and orbital occupancy near those interfaces, which may result from charge transfer processes. [ 3 , 9 11 ] If materials used in heterostructures have different work functions, a non-equilibrium situation will be created at the interface and charge will be transferred until the chemical potential levels off. [ 12 ] The use of such phenomena to modify doping in heterostructures has been proposed theoretically as a new route to avoid the quenched disorder that inevitably accompanies the chemical doping. At the interface between a Mott insulating parent compound of the high critical temperature superconductor (HTSC) family and a suitable material that would act as the charge donor, electron doped phases could be stabilized which would eventually turn metallic and perhaps superconducting. [ 12 , 13 ] Such charge transfer processes have been observed at interfaces involving copper oxides such as La 0.7 Ca 0.3 MnO 3 / YBa 2 Cu 3 O 7 , [ 14 ] La 2 x Sr x CuO 4 /La 2 CuO 4 [ 15 ] and SrTi 1 x Nb x O 3 / Sm 2 CuO 4 . [ 16 ] While a novel 2D superconducting state was found at the La 2-x Sr x CuO 4 /La 2 CuO 4 interface, [ 17 ] the effect of doping by charge transfer could not be examined in the other two cases due to the detrimental effect on the YBa 2 Cu 3 O 7 superconductivity of the spin polarized electrons from La 0.7 Ca 0.3 MnO 3 in one case and due to the conducting nature of the SrTi 1 x Nb x O 3 in the other case, which obscures changes in the conducting properties of the interface layer. In this paper, the structural and

Bruno, Flavio Y.↗

Spin-orbit coupling, strong correlation, and insulator-metal transitions: The J eff = 3 2 ferromagnetic Dirac-Mott insulator Ba 2 NaOsO 6

The double perovskite Ba 2 NaOsO 6 (BNOO), an exotic example of a very high oxidation state (heptavalent) osmium d1 compound and also uncommon by being a ferromagnetic open d-shell (Mott) insulator without Jahn-Teller (JT) distortion, is modeled using a density functional theory based hybrid functional incorporating exact exchange for correlated electronic orbitals and including the large spin-orbit coupling (SOC). The experimentally observed narrow-gap ferromagnetic insulating ground state is obtained, but only when including spin-orbit coupling, making this a Dirac-Mott insulator. The calculated easy axis along [110] is in accord with experiment, providing additional support that this approach provides a realistic method for studying this system. The predicted spin density for [110] spin orientation is nearly cubic (unlike for other directions), providing an explanation for the absence of JT distortion. An orbital moment of –0.4μ B strongly compensates the +0.5μ B spin moment on Os, leaving a strongly compensated moment more in line with experiment. Remarkably, the net moment lies primarily on the oxygen ions. An insulator-metal transition, by rotating the magnetization direction with an external field under moderate pressure, is predicted as one consequence of strong SOC, and metallization under moderate pressure is predicted. In conclusion, a comparison is made with the isostructural, isovalent insulator Ba 2 LiOsO 6 , which, however, orders antiferromagnetically.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Imaging antiferromagnetic domain fluctuations and the effect of atomic scale disorder in a doped spin-orbit Mott insulator

Correlated oxides can exhibit complex magnetic patterns. Understanding how magnetic domains form in the presence of disorder and their robustness to temperature variations has been of particular interest, but atomic scale insight has been limited. We use spin-polarized scanning tunneling microscopy to image the evolution of spin-resolved modulations originating from antiferromagnetic (AF) ordering in a spin-orbit Mott insulator perovskite iridate Sr 3 Ir 2 O 7 as a function of chemical composition and temperature. We find that replacing only several percent of lanthanum for strontium leaves behind nanometer-scale AF puddles clustering away from lanthanum substitutions preferentially located in the middle strontium oxide layer. Thermal erasure and reentry into the low-temperature ground state leads to a spatial reorganization of the AF puddles, which nevertheless maintain scale-invariant fractal geometry in each configuration. Our experiments reveal multiple stable AF configurations at low temperature and shed light onto spatial fluctuations of the AF order around atomic scale disorder in electron-doped Sr 3 Ir 2 O 7 .

36 MATERIALS SCIENCE↗

One-dimensional edge transport on the surface of cylindrical Bi{sub x}Te{sub 3−y}Se{sub y} nanowires in transverse magnetic fields

The geometry of topological insulators (TIs) has a major impact on the magnetoelectric band structure of their surface states. Here, we investigate the surface states of cylindrical TI bismuth telluride selenide nanowires with three different diameters, by parallel and transverse magnetoresistance (MR) measurements. In parallel configuration, we observe Aharonov-Bohm oscillations as well as weak antilocalization, indicating two-dimensional TI surface states. In transverse magnetic fields, we observed MR oscillations that are non-linear against the reciprocal of the magnetic field and thus cannot be explained by two- or three-dimensional states. Instead, our transport data analysis reveals that these MR oscillations are the consequence of one-dimensional edge channels at the nanowire surface that form due to the projection of the external magnetic field on the cylindrically curved surface plane in high magnetic fields. Our observation provides an exotic class of surface states that might be used for electronic and spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Two-Dimensional J eff = 1 / 2 Antiferromagnetic Insulator Unraveled from Interlayer Exchange Coupling in Artificial Perovskite Iridate Superlattices

We report an experimental investigation of the two-dimensional J eff =1/2 antiferromagnetic Mott insulator by varying the interlayer exchange coupling in [(SrIrO 3 ) 1 , (SrTiO 3 ) m ] (m=1, 2 and 3) superlattices. Although all samples exhibited an insulating ground state with long-range magnetic order, temperature-dependent resistivity measurements showed a stronger insulating behavior in the m = 2 and m = 3 samples than the m = 1 sample which displayed a clear kink at the magnetic transition. This difference indicates that the blocking effect of the excessive SrTiO 3 layer enhances the effective electron-electron correlation and strengthens the Mott phase. The significant reduction of the Néel temperature from 150 K for m = 1 to 40 K for m = 2 demonstrates that the long-range order stability in the former is boosted by a substantial interlayer exchange coupling. Resonant x-ray magnetic scattering revealed that the interlayer exchange coupling has a switchable sign, depending on the SrTiO 3 layer number m, for maintaining canting-induced weak ferromagnetism. In conclusion, the nearly unaltered transition temperature between the m = 2 and the m = 3 demonstrated that we have realized a two-dimensional antiferromagnet at finite temperatures with diminishing interlayer exchange coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Orientation Control of Interfacial Magnetism at La 0.67 Sr 0.33 MnO 3 /SrTiO 3 Interfaces

Understanding the magnetism at the interface between a ferromagnet and an insulator is essential because the commonly posited magnetic “dead” layer close to an interface can be problematic in magnetic tunnel junctions. Previously, degradation of the magnetic interface was attributed to charge discontinuity across the interface. In this paper, the interfacial magnetism was investigated using three identically prepared La 0.67 Sr 0.33 MnO 3 (LSMO) thin films grown on different oriented SrTiO 3 (STO) substrates by polarized neutron reflectometry. In all cases the magnetization at the LSMO/STO interface is larger than the film bulk. We show that the interfacial magnetization is largest across the LSMO/STO interfaces with (001) and (111) orientations, which have the largest net charge discontinuities across the interfaces. In contrast, the magnetization of LSMO/STO across the (110) interface, the orientation with no net charge discontinuity, is the smallest of the three orientations. We show that a magnetically degraded interface is not intrinsic to LSMO/STO heterostructures. Finally, the approach to use different crystallographic orientations provides a means to investigate the influence of charge discontinuity on the interfacial magnetization.

36 MATERIALS SCIENCE↗

Origin of the charge gap in LaMnPO

In this paper, we present high temperature inelastic neutron scattering and magnetic susceptibility measurements of the antiferromagnetic insulator LaMnPO that are consistent with the presence of two-dimensional magnetic correlations up to a temperature T max ≈700K»T N =375 K, the Néel temperature. Optical transmission measurements show the T=300 K direct charge gap Δ=1 eV has decreased only marginally by 500 K and suggest it decreases by only 10% at T max . Density functional theory and dynamical mean-field theory calculations reproduce a direct charge gap in paramagnetic LaMnPO only when a strong Hund's coupling J H =0.9 eV is included, as well as on-site Hubbard U=8 eV. In conclusion, our results show that LaMnPO is a Mott-Hund's insulator, in which the charge gap is rather insensitive to antiferromagnetic exchange coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spontaneous Supercrystal Formation During a Strain‐Engineered Metal–Insulator Transition

Abstract Mott metal–insulator transitions possess electronic, magnetic, and structural degrees of freedom promising next‐generation energy‐efficient electronics. A previously unknown, hierarchically ordered, and anisotropic supercrystal state is reported and its intrinsic formation characterized in‐situ during a Mott transition in a Ca 2 RuO 4 thin film. Machine learning‐assisted X‐ray nanodiffraction together with cryogenic electron microscopy reveal multi‐scale periodic domain formation at and below the film transition temperature ( T Film ≈ 200–250 K) and a separate anisotropic spatial structure at and above T Film . Local resistivity measurements imply an intrinsic coupling of the supercrystal orientation to the material's anisotropic conductivity. These findings add a new degree of complexity to the physical understanding of Mott transitions, opening opportunities for designing materials with tunable electronic properties.

Gorobtsov, Oleg Yu.↗

Improving charge transport in integrated MoO 3 /C electrode materials for water-in-salt energy storage systems by incorporating oxygen vacancies

Improvements in the charge storage properties of α-MoO 3 used as an electrode with a 30m ZnCl 2 water-in-salt electrolyte have been achieved by enhancements in electron and ion transport enabled by an inventive synthesis route. Electron transport was improved through the integration of MoO 3 with dopamine-derived carbon via a chemical preintercalation route, and enhanced ion transport was achieved by incorporating oxygen vacancies in MoO 3 structure through ethanol 2 reduction under hydrothermal conditions. Here, the presence of carbon was confirmed by corresponding D and G bands observed in Raman spectroscopy measurements. The presence of oxygen vacancies was proven through correlated XPS, TGA, Raman spectroscopy and XRD analyses, with the introduction of oxygen vacancies leading to an expanded interlayer region. Four-point probe measurements provided evidence of increased electronic conductivity due to the incorporation of carbon, and cyclic voltammetry-based charge storage mechanism analyses revealed increases in ion transport kinetics due to oxygen vacancy formation. Tuning the oxygen vacancy concentration is critical, as excessive concentrations of these point defects leads to structural instability and poor capacity retention. This work demonstrates the combined potential of carbon and oxygen vacancies in moderate concentrations to enhance the charge storage properties of transition metal oxides. The strategies developed in this study offer a path to the development of promising materials for high-rate, high-capacity, and long-duration electrochemical energy storage technologies.

77 NANOSCIENCE AND NANOTECHNOLOGY↗