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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47

Design of 1500V/200kW 99.6% Efficiency Dual Active Bridge Converters Based on 1700V SiC Power MOSFET Module

High efficiency, high density and galvanically isolated power converters are attractive for medium voltage high power applications. This paper presents a 1.5kV/200kW bidirectional Dual Active Bridge (DAB) converter using a newly developed 1.7kV SiC MOSFET module. The intended application is megawatt scale solid state transformer (SST) and 1500V PV inverter application using modular architecture. One novel model to estimate the turn-off loss using snubber capacitors is proposed and experimentally verified. An optimized PCB-based busbar design is introduced to reduce the voltage overshoot across the SiC device, making the design suitable for 1.5kVdc applications. The mechanism of how the optimized PCB-based busbar can reduce the voltage overshoot is quantitatively interpreted and experimentally verified. The DAB converter achieved an efficiency of 98.85% at 200kW and a maximum of 99.53% at 60kW. The maximum efficiency for series-resonant mode is 99.6% at 85kW and 99.3% at 200kW. The power density is 26W/inch3 (1.6MW/m3) which is much higher than traditional industry products.

Xu, Wei↗

Single DC Source Based Cascaded Multilevel Inverter

The objective of this project is to develop a high-efficiency solid-state transformer that converts a fixed DC voltage to a medium-voltage AC for utility distribution network connections without having the conventional low-frequency bulky transformers and switch gears. The initial target of 99% efficiency was achieved with the use of wide bandgap semiconductor devices using a proposal novel multilevel inverter. The medium-voltage was successfully tested at 7.2/12.47 kV phase/line voltage level for a 100-kW three-phase inverter.

14 SOLAR ENERGY↗

Synthesis and Structural Characterization of Novel Intermetallic Clathrates – Prospective Materials for Thermoelectric Applications

The overall objective of the project is to contribute to the development of the fundamental chemistry and physics of new intermetallic clathrates (open framework materials) that can find applications in solid-state energy conversion. Such materials are termed thermoelectric materials and they possess the unique property that a temperature gradient induces a separation of charge in them. Thermoelectric materials are of great practical importance because of their potential for widespread applications in power generation or in cooling devices. Recently, new complex inorganic materials with open framework structures, such as skutterudites and clathrates have been suggested to be a breakthrough in the thermoelectric energy conversion. The basic hypothesis for the thermoelectric properties of such “host-guest” structures is that the conducting host-framework provides a high Seebeck coefficient (S) and electrical conductivity (σ), while low-lying optical modes, associated with the vibration of the guest-atoms, hybridize with the acoustic modes. The proposed interdisciplinary efforts are the initial part of a broader, collaborative program to investigate the structure-bonding-properties relationships in related intermetallic compounds. More specifically, our work is aimed at: 1. Comprehensive and systematic investigations of the crystal chemistry and stoichiometry breadth of new semiconducting clathrates with the type-II or type-III structures. 2. Precise determination of the composition with minimum occupancy of the cages, needed for the thermodynamic stability of the clathrate framework, coupled with investigations to verify the possibility of “rattling” atoms inside the open-framework structure. 3. Extensive physical property measurements (S, σ, k, R H , C p , $\chi_{m}$). Ultimately, this new phenomenology will be used as a foundation for the rational tuning of potentially interesting properties of the newly synthesized materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Reversible migration of silver on memorized pathways in Ag-Ge{sub 40}S{sub 60} films

Reversible and reproducible formation and dissolution of silver conductive filaments are studied in Ag-photodoped thin-film Ge{sub 40}S{sub 60} subjected to electric fields. A tip-planar geometry is employed, where a conductive-atomic-force microscopy tip is the tip electrode and a silver patch is the planar electrode. We highlight an inherent “memory” effect in the amorphous chalcogenide solid-state electrolyte, in which particular silver-ion migration pathways are preserved “memorized” during writing and erasing cycles. The “memorized” pathways reflect structural changes in the photodoped chalcogenide film. Structural changes due to silver photodoping, and electrically-induced structural changes arising from silver migration, are elucidated using Raman spectroscopy. Conductive filament formation, dissolution, and electron (reduction) efficiency in a lateral device geometry are related to operation of the nano-ionic Programmable Metallization Cell memory and to newly emerging chalcogenide-based lateral geometry MEMS technologies. The methods in this work can also be used for qualitative multi-parameter sampling of metal/amorphous-chalcogenide combinations, characterizing the growth/dissolution rates, retention and endurance of fractal conductive filaments, with the aim of optimizing devices.

36 MATERIALS SCIENCE↗

Review of Dew Point Evaporative Cooling Technology for Air Conditioning Applications

Indirect evaporative cooling has the potential to significantly improve the natural environment. It follows from a significant reduction in electricity consumption in the hot period, and hence lower operating costs for cooling systems. This paper presents the current state of knowledge and research directions on dew point indirect evaporative cooling. It was found that researchers focus on the development of dew point indirect evaporative coolers (DPIEC) by improving its design, geometry, water distribution, and new porous materials implementation. To evaluate the performance of new types of DPIEC, different methods are used by the scientists. Finally, optimized devices are studied in terms of their performance in different systems, like hybrid and desiccant systems, considering different climate conditions. Potential directions of development of evaporative technologies were indicated, such as increasing the coefficient of performance of solid desiccant evaporative cooling systems, developing novel geometry, and efficient water distribution, including development of porous materials.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Coordinating Garbage Collectionfor Arrays of Solid-State Drives

The primary goal of the extreme-scale plasma turbulence studies described in this article is to gain new insights on confinement scaling in magnetic fusion systems by using powerful, world-class supercomputers to carry out simulations with unprecedented resolution and temporal duration. New insights have been gained on the key question of how the turbulent transport of thermal energy and particles in the plasma and the associated confinement scale from present-generation devices to much larger ITER-size plasmas. In particular, new results from large-scale simulation studies have demonstrated that improvement in confinement as devices grow larger is far more gradual, with significantly lower loss rates than less-powerful computer simulations have indicated in research carried out over the past decade.

Computer Science↗

Analysis of the transient response of nuclear spins in GaAs with/without nuclear magnetic resonance

As an alternative to studying the steady-state responses of nuclear spins in solid state systems, working within a transient-state framework can reveal interesting phenomena. The response of nuclear spins in GaAs to a changing magnetic field was analyzed based on the time evolution of nuclear spin temperature. Simulation results well reproduced our experimental results for the transient oblique Hanle signals observed in an all-electrical spin injection device. The analysis showed that the so called dynamic nuclear polarization can be treated as a cooling tool for the nuclear spins: It works as a provider to exchange spin angular momentum between polarized electron spins and nuclear spins through the hyperfine interaction, leading to an increase in the nuclear polarization. In addition, a time-delay of the nuclear spin temperature with a fast sweep of the external magnetic field produces a possible transient state for the nuclear spin polarization. On the other hand, the nuclear magnetic resonance acts as a heating tool for a nuclear spin system. This causes the nuclear spin temperature to jump to infinity: i.e., the average nuclear spins along with the nuclear field vanish at resonant fields of {sup 75}As, {sup 69}Ga and {sup 71}Ga, showing an interesting step-dip structure in the oblique Hanle signals. These analyses provide a quantitative understanding of nuclear spin dynamics in semiconductors for application in future computation processing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Hexagonal boron nitride neutron detectors with high detection efficiencies

Here, neutron detectors fabricated from 10B enriched hexagonal boron nitride (h- 10 BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm 2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer on both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h- 10 BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6 LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.

61 RADIATION PROTECTION AND DOSIMETRY↗

Using Nanowires To Extract Excitons from a Nanocrystal Solid

Synthetic methods yielding highly uniform colloidal semiconductor nanocrystals with controlled shapes and sizes are now available for many materials. These methods have enabled geometrical control of optical properties, which are difficult or impossible to achieve in conventional bulk solids. However, incorporating nanocrystals efficiently into photodetectors remains challenging because of the low charge carrier mobilities typical of nanocrystal solids. Here we present an approach based on exciton energy transfer from CdSe/CdS core/shell nanocrystals to embedded CdSe nanowires. By combining the wide electronic tunability of nanocrystals with the excellent one-dimensional charge transport characteristics obtainable in nanowires, we are able to increase photocurrent extraction from a nanocrystal solid by 2–3 orders of magnitude. Furthermore, we correlate local device morphology with optoelectronic functionality by measuring the local photocurrent response in a scanning confocal microscope. We also discuss how nancocrystal/nanowire hybrid devices could be used in particle detector systems.

36 MATERIALS SCIENCE↗

Colossal Nernst power factor in topological semimetal NbSb 2

Today solid-state cooling technologies below liquid nitrogen boiling temperature (77 K), crucial to quantum information technology and probing quantum state of matter, are greatly limited due to the lack of good thermoelectric and/or thermomagnetic materials. Here, we report the discovery of colossal Nernst power factor of 3800 × 10 -4 W m -1 K -2 under 5 T at 25 K and high Nernst figure-of-merit of 71 × 10 -4 K -1 under 5 T at 20 K in topological semimetal NbSb 2 single crystals. The observed high thermomagnetic performance is attributed to large Nernst thermopower and longitudinal electrical conductivity, and relatively low transverse thermal conductivity. The large and unsaturated Nernst thermopower is the result of the combination of highly desirable electronic structures of NbSb 2 having compensated high mobility electrons and holes near Fermi level and strong phonon-drag effect. This discovery opens an avenue for exploring material option for the solid-state heat pumping below liquid nitrogen temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Gallium arsenide thermal conductivity and optical phonon relaxation times from first-principles calculations

Thermal conductivity of crystalline GaAs is calculated using first-principles lattice dynamics. The harmonic and cubic force constants are obtained by fitting them to the force-displacement data from density functional theory calculations. Phonon dispersion is calculated from a dynamical matrix constructed using the harmonic force constants and phonon relaxation times are calculated using Fermi's Golden rule. The calculated GaAs thermal conductivity agrees well with experimental data. Thermal conductivity accumulations as a function of the phonon mean free path and as a function of the wavelength are obtained. Our results predict a significant size effect on the GaAs thermal conductivity in the nanoscale. Relaxation times of optical phonons and their contributions from different scattering channels are also studied. Such information will help the understanding of hot phonon effects in GaAs-based devices.

42 ENGINEERING↗

Structural, magnetic, dielectric and magneto-dielectric properties of (BaTiO3)0.70(Li0.3Zn0.4Fe2.3O4)0.30

Highlights: Microcrystals of BaTiO{sub 3} is incorporated in Li{sub 0.3}Zn{sub 0.4}Fe{sub 2.3}O{sub 4} using sol-gel method. Crystallographic phase and morphology of the composite is investigated. Magnetic ordering originates from the ferrimagnetic matrix of the composite. The dielectric behaviour is originated from the BaTiO{sub 3} particles in the composite. The composite shows strong magneto-electric property, useful for application. - Abstract: Structural, magnetic, dielectric and magneto-dielectric properties of (BaTiO{sub 3}){sub 0.70}(Li{sub 0.3}Zn{sub 0.4}Fe{sub 2.3}O{sub 4}){sub 0.30} [BTO-LZFO] composite are studied. To prepare the composite, microcrystals of BaTiO{sub 3} [BTO] prepared in solid-state reaction are taken along with the precursors of Li{sub 0.3}Zn{sub 0.4}Fe{sub 2.3}O{sub 4} [LZFO], prepared in sol-gel route. X-ray diffraction (XRD) study confirms the phase purity of the composite sample. High-resolution transmission electron microscopy also confirms the formation of the composite state. Analysis of magnetic data confirms the ferrimagnetic nature of the sample along with a fraction of superparamagnetic particles. The ferrimagnetism is explained by Néels’ two-sublattice model. The dielectric spectrum of the sample follows the Cole-Cole relaxation. Interestingly, the ferroelectric and dielectric behaviours of BTO are retained in the composite state of BTO-LZFO, though the magnetization is enhanced drastically. This enhanced magnetic property along with the ferroelectricity and strong magneto-dielectric coupling in the composite state confirms that BTO-LZFO can be used as a multiferroic material in different electronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Minimizing Energy Loss by Designing Multifunctional Solid Additives to Independent Regulation of Donor and Acceptor Layers for Efficient LBL Polymer Solar Cells

Solid additives are crucial in layer-by-layer (LBL) polymer solar cells (PSCs). Despite its importance, the simultaneous application of solid additives into both donor and acceptor layers has been largely overlooked. In this work, two multifunctional solid additives are actively designed, and investigated the synergistic effect on both donor and acceptor layers. Incorporating the multifunctional solid additives into the donor layer could effectively enhance the aggregation and molecular stacking of the donor polymer, leading to reduced energy disorder and minimizing ΔE 2 . When the multifunctional solid additives are introduced into the acceptor layer, they just play a role in optimizing the morphology, thereby reducing the ΔE 3 . Excitedly, the simultaneous addition of the multifunctional solid additives into both donor and acceptor layers produced a synergistic effect for decreasing ΔE 2 and ΔE 3 simultaneously, especially adding SA2, thus enabling an excellent power conversion efficiency (PCE) of 19.95% (certified as 19.68%) with an open-circuit voltage (V oc ) of 0.921 V, a short circuit current density (J sc ) of 27.08 mA cm -2 and a fill factor (FF) of 79.98%. The work highlights the potential of multifunctional solid additives in independently regulating the properties of donor and acceptor layers, which is expected as a promising approach for further developing higher performance PSCs.

36 MATERIALS SCIENCE↗

Coherent electrical control of a single high-spin nucleus in silicon

Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, for example, in chemistry, medicine, materials science and mining. Nuclear spins also featured in early proposals for solid-state quantum computers and demonstrations of quantum search and factoring algorithms. Scaling up such concepts requires controlling individual nuclei, which can be detected when coupled to an electron. However, the need to address the nuclei via oscillating magnetic fields complicates their integration in multi-spin nanoscale devices, because the field cannot be localized or screened. Control via electric fields would resolve this problem, but previous methods relied on transducing electric signals into magnetic fields via the electron–nuclear hyperfine interaction, which severely affects nuclear coherence. In this work, we demonstrate the coherent quantum control of a single 123 Sb (spin-7/2) nucleus using localized electric fields produced within a silicon nanoelectronic device. The method exploits an idea proposed in 1961 but not previously realized experimentally with a single nucleus. Our results are quantitatively supported by a microscopic theoretical model that reveals how the purely electrical modulation of the nuclear electric quadrupole interaction results in coherent nuclear spin transitions that are uniquely addressable owing to lattice strain. The spin dephasing time, 0.1 seconds, is orders of magnitude longer than those obtained by methods that require a coupled electron spin to achieve electrical driving. These results show that high-spin quadrupolar nuclei could be deployed as chaotic models, strain sensors and hybrid spin-mechanical quantum systems using all-electrical controls. Integrating electrically controllable nuclei with quantum dots could pave the way to scalable, nuclear- and electron-spin-based quantum computers in silicon that operate without the need for oscillating magnetic fields.

42 ENGINEERING↗

Silicon compatible Sn-based resistive switching memory

Large banks of cheap, fast, non-volatile, energy efficient, scalable solid-state memories are an increasingly essential component for today's data intensive computing. Conductive-bridge random access memory (CBRAM) – which involves voltage driven formation and dissolution of Cu or Ag filaments in a Cu (or Ag) anode/dielectric (HfO 2 or Al 2 O 3 )/inert cathode device – possesses the necessary attributes to fit the requirements. Cu and Ag are, however, fast diffusers and known contaminants in silicon microelectronics. In this paper, employing a criterion for electrode metal selection applicable to cationic filamentary devices and using first principles calculations for estimating diffusion barriers in HfO 2 , we identify tin (Sn) as a rational, silicon CMOS compatible replacement for Cu and Ag anodes in CBRAM devices. We then experimentally fabricate Sn based CBRAM devices and demonstrate very fast, steep-slope memory switching as well as threshold switching, comparable to Cu or Ag based devices. Furthermore, time evolution of the cationic filament formation along with the switching mechanism is discussed based on time domain measurements (I vs. t) carried out under constant voltage stress. Finally, the time to threshold is shown to be a function of both the voltage stress (V stress ) as well as the initial leakage current (I 0 ) through the device.

42 ENGINEERING↗

Synthesis, structure and photoluminescence properties of Sm{sup 3+}-doped BiOBr phosphor

Well-crystallized tetragonal layered BiOBr and Bi{sub 0.95}Sm{sub 0.05}OBr phosphors were prepared by the solid state method. These compounds were characterized using powder X-Ray diffraction and photoluminescence technique. In PL spectra, the electric dipole transitions dominate than other transitions which indicate that the Sm{sup 3+} ions occupy a site with an inversion center of BiOBr. CIE chromaticity diagram confirmed that these phosphors can be useful in the fabrication of red component in white light emitting diodes (WLEDs) for display device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗