Desorption kinetics of multiple adsorbates - Cesium with fluorine on molybdenum and tungsten
Desorption kinetics of multiple adsorbates - cesium with fluorine on molybdenum and tungsten with application to thermionic diodes
SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Desorption kinetics of multiple adsorbates - cesium with fluorine on molybdenum and tungsten with application to thermionic diodes
Thermionic diode pressure transducer for liquid metal applications
Properties of thermionic cathode produced by reacting barium carbonate and nickel oxide on nickel
Discrepancy between observed ion production rate in cesium thermionic converter and Saha-Langmuir equation prediction suggests locality of ion formation
Cesium reservoir control units for thermionic diodes
Thermoelectric flat plates, thermionic systems, and uncooled silicon solar cells for solar direct-energy conversion
Boiling alkali metal corrosion research for Rankine cycle and thermionic power conversion systems
Cesium vapor heat conduction in thermionic energy converters, space charge distribution in neutral plasma, and titanium oxide thin films
Temperature and gamma radiation effects on electric breakdown of polycrystalline alpha phase aluminum oxide ceramic insulators used in nuclear thermionic reactors
Spacecraft power supply evaluation of solar cells, and thermionic energy conversion systems
Liquid magnetohydrodynamic power conversion, thermionic reactors, enthalpy measurements, and flow visualization studies
Thermionic work functions and electron emission S curves for contaminated copper surface in oxygen and cesium vapors, separate and mixed
Long wavelength Si 1-X Ge X /Si heterojunction internal photoemission (HIP) infrared detectors have been successfully demonstrated utilizing the growth of degenerately boron doped Si 1-X Ge X layers on Si. Recently, Si 0.7 GE 0.3 /SI HIP detectors with either a Si 1-X Ge X single layer or a Si 1-X Ge X /Si multilayer have been demonstrated with cutoff wavelengths out to 23 µm. Near-ideal thermionic emission dark current characteristics were measured and the electrical potential barriers were determined by the Richardson plot. A photoresponse model, similar to the modified Fowler Equation has been developed for the Si 1-X Ge X /Si heterojunction internal photoemission infrared detector at wavelengths corresponding to photon energies less than the Fermi energy. The optical potential barriers, the corresponding cutoff wavelengths, and the emission coefficients, C 1 , for the HIP detectors have been determined from the measured spectral responses using the photoresponse model. Similar optical and thermal potential barriers were obtained.
A series of models have been developed to describe the temperature distribution of thermionic cathodes in high current discharges in an effort to evaluate cathode service life. A number of experimental measures have been made to validate these models and provide values of the input parameters. Examination of the surfaces of several cathodes after varying lengths of operation shows the evolution of surface microstructures and reveals the preferential deposition of thorium metal on the cathode tip.
Scientists as SLAC National Laboratory explain the concept, Photon Enhanced Thermionic Emission (PETE), and how this process can capture more energy from photovoltaic panels by harnessing heat energy from sunlight.
Many material device applications would benefit from thin diamond coatings, but current growth techniques, such as chemical vapor deposition (CVD) or atomic layer deposition require high substrate and gas-phase temperatures that would destroy the device being coated. The development of freestanding, thin boron-doped diamond nanosheets grown on tantalum foil substrates via microwave plasma-assisted CVD is reported. These diamond sheets (measuring up to 4 × 5 mm in planar area, and 300–600 nm in thickness) are removed from the substrate using mechanical exfoliation and then transferred to other substrates, including Si/SiO 2 and graphene. The electronic properties of the resulting diamond nanosheets and their dependence on the free-standing growth, the mechanical exfoliation and transfer processes, and ultimately on their composition are characterized. To support this, a prototypical diamond nanosheet–graphene field effect transistor-like (DNGfet) device is developed and its electronic transport properties are studied as a function of temperature. The resulting DNGfet device exhibits thermally activated transport (thermionic conductance) above 50 K. Below 50 K a transition to variable range hopping is observed. Finally, these findings demonstrate the first step towards a low-temperature diamond-based transistor.
Abstract Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors. The reduction of the Schottky barrier height in bottom‐contact top‐gate organic transistors is demonstrated by adding 1 nm thick atomic layer deposited Al 2 O 3 on the source and drain contacts. By using two different donor‐acceptor copolymers, both p‐ and n‐ type transistors are investigated. Temperature‐dependent current–voltage measurements from non‐treated, self‐assembled monolayer treated, and Al 2 O 3 treated Au source‐drain contact field‐effect transistors with varying channel lengths are carried out. The drain current versus drain voltage near zero gate voltage, which may be described by the thermionic emission model at temperatures above 150 K, allows the estimation of the Schottky barrier height ( φ B ). The Al 2 O 3 contact‐treated transistors show more than 40% lower φ B compared with the non‐treated contacts in the p ‐type transistor. Similarly, an isoindigo‐based transistor, with n ‐type transport, shows a reduction in φ B with Al 2 O 3 treated contacts suggesting that such ultrathin oxide layers provide a universal method for reducing the barrier height.
Broader adoption of 4D ultrafast electron microscopy (UEM) for the study of chemical, materials, and quantum systems is being driven by development of new instruments as well as continuous improvement and characterization of existing technologies. Perhaps owing to the still-high barrier to entry, the full range of capabilities of laser-driven 4D UEM instruments has yet to be established, particularly when operated at extremely low beam currents (~fA). Accordingly, with an eye on beam stability, we have conducted particle tracing simulations of unconventional off-axis photoemission geometries in a UEM equipped with a thermionic-emission gun. Specifically, we have explored the impact of experimentally adjustable parameters on the time-of-flight (TOF), the collection efficiency (CE), and the temporal width of ultrashort photoelectron packets. The adjustable parameters include the Wehnelt aperture diameter (DW), the cathode set-back position (Ztip), and the position of the femtosecond laser on the Wehnelt aperture surface relative to the optic axis (Rphoto). Notable findings include significant sensitivity of TOF to DW and Ztip, as well as non-intuitive responses of CE and temporal width to varying Rphoto. As a means to improve accessibility, practical implications and recommendations are emphasized wherever possible.