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At least 847 records · Page 47

Encapsulation of Defective Fuel Rods for Transport and Dry Storage - 18190

Removing of the whole inventory of fissile and non-fissile material out of the spent fuel pool is performed when the power plant is about to start its last operation phases or may occur during the extended operating life cycle due to plant storage space limitation. Removal of defective spent fuel is then definitely required for emptying the pool and may in addition also be performed in the course of plant operation for reducing pool contamination. Depending on the general used fuel management solution chosen for post-storage pool operations, specific management of a defective fuel assembly (DFA) and/or a defective fuel rod (DFR) should be implemented accordingly to the regulation requirements to be followed. For meeting these DFA and/or DFR management needs, Framatome together with New AREVA offer wide portfolio of solutions with flexibility and adaptability advantages: - from simple to advanced technologies; - for several types of fuel assemblies and/or defective rods; - for suitable and compatible cask designs; - for compatible solution with both used fuel final management strategies (closed and open fuel cycles). For instance, a technology is jointly proposed and developed by New AREVA and Framatome for implementing dry storage of DFR. It consists in: - encapsulating each DFR by loading the fuel rod in a respective capsule, drying the fuel rod using a process which allows to physically verify with high accuracy the dryness inside the DFR, and seal welding the capsule - assembling the capsules in a capsule canister (a skeleton with external dimensions similar to a respective fuel assembly) and - transferring the capsule canister along with intact spent fuel assemblies in an associated dry transport and storage (dual purpose) cask. Such a project is currently being implemented in Belgium. After successfully obtaining the cask transport and storage license extensions for including the encapsulated DFR content, the first encapsulation campaign has been started in 2017. The purpose of the paper is to present the industrial solutions proposed by Framatome and New AREVA together, for management of DFR, notably the one related to dry storage of encapsulated DFR implemented in Belgium and the perspectives opened by this successful project. The paper presents: - the available solutions for management of DFA and/or DFR depending on applicable requirements - the drying method, welding of a capsule and associated cask as the state of art technology for dry storage of DFR and/or DFA; - lessons learned from project management and encapsulation campaign performed in Belgium; - perspectives for management of DFR and/or DFA. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Semiconducting to Metallic Electronic Landscapes in Defects-Controlled 2D π-d Conjugated Coordination Polymer Thin Films

Two-dimensional coordination polymers (2DCPs) have been predicted to exhibit exotic properties such as superconductivity, topological insulating behavior, catalytic activity, and superior ion transport for energy applications; experimentally, these materials have fallen short of their expectation due to the lack of synthesis protocols that yield continuous, large crystallite domains, and highly ordered thin films with controllable physical and chemical properties. Herein, the fabrication of large-area, highly ordered 2DCP thin films with large crystallite domains using chemical vapor deposition (CVD) approaches is described. It is demonstrated that defects and the packing motifs of 2DCP thin films may be controlled by adjusting the vapor–vapor and vapor–solid interactions of the metal and organic linker precursors during the CVD fabrication process. Such control allows for the fabrication of defects-controlled 2DCP thin films that show either semiconducting or metallic behavior. The findings provide the first demonstration of tuning the electrical properties of sub 100 nm-thick continuous 2DCP thin films by controlling their electronic landscape through defect engineering. As such, it is determined that large-area, highly ordered 2DCP thin films may undergo a semiconducting to metallic transition that is correlated to changes in morphology, crystalline domain sizes, crystallite orientation, defect interactions, and electronic structure.

2D coordination polymers↗

Defect‐Induced, Ferroelectric‐Like Switching and Adjustable Dielectric Tunability in Antiferroelectrics

Abstract Antiferroelectrics, which undergo a field‐induced phase transition to ferroelectric order that manifests as double‐hysteresis polarization switching, exhibit great potential for dielectric, electromechanical, and electrothermal applications. Compared to their ferroelectric cousins, however, considerably fewer efforts have been made to understand and control antiferroelectrics. Here, it is demonstrated that the polarization switching behavior of an antiferroelectric can be strongly influenced and effectively regulated by point defects. In films of the canonical antiferroelectric PbZrO 3 , decreasing oxygen pressure during deposition (and thus increasing adatom kinetic energy) causes unexpected “ferroelectric‐like” polarization switching although the films remain in the expected antiferroelectric orthorhombic phase. This “ferroelectric‐like” switching is correlated with the creation of bombardment‐induced point‐defect complexes which pin the antiferroelectric–ferroelectric phase boundaries, and thus effectively delay the phase transition under changing field. The effective pinning energy is extracted via temperature‐dependent switching‐kinetics studies. In turn, by controlling the concentration of defect complexes, the dielectric tunability of the PbZrO 3 can be adjusted, including being able to convert between “positive” and “negative” tunability near zero field. This work reveals the important role and strong capability of defects to engineer antiferroelectrics for new performance and functionalities.

Pan, Hao↗

Complex Oxides under Simulated Electric Field: Determinants of Defect Polarization in AB O 3 Perovskites

Abstract Polarization of ionic and electronic defects in response to high electric fields plays an essential role in determining properties of materials in applications such as memristive devices. However, isolating the polarization response of individual defects has been challenging for both models and measurements. Here the authors quantify the nonlinear dielectric response of neutral oxygen vacancies, comprised of strongly localized electrons at an oxygen vacancy site, in perovskite oxides of the form AB O 3 . Their approach implements a computationally efficient local Hubbard U correction in density functional theory simulations. These calculations indicate that the electric dipole moment of this defect is correlated positively with the lattice volume, which they varied by elastic strain and by A‐site cation species. In addition, the dipole of the neutral oxygen vacancy under electric field increases with increasing reducibility of the B‐site cation. The predicted relationship among point defect polarization, mechanical strain, and transition metal chemistry provides insights for the properties of memristive materials and devices under high electric fields.

36 MATERIALS SCIENCE↗

Molecular‐Level Insight into the Chlorofluorocarbons Adsorption by Defective Covalent Organic Polymers

Abstract Halocarbons have important industrial applications, but because of their contribution to global warming and the fact that they can cause ozone depletion, they are considered highly toxic. Hence, the techniques that can capture and recover the used halocarbons with energy‐efficient methods have been recently received greater attention. In this contribution, we report the capture of dichlorodifluoromethane (R12), which has high global warming and ozone depletion potential, using covalent organic polymers (COPs). The defect‐engineered COPs were synthesized and demonstrated outstanding sorption capacities, ~226 wt % of R12 combined with linear‐shaped adsorption isotherms. We further identified the plausible microscopic adsorption mechanism of the investigated COPs via grand canonical Monte Carlo simulations applied to non‐defective and a collection of atomistic models of the defective COPs. The modeling work suggests that significant R12 adsorption performance is attributed to a gradual increment of porosities due to isolated/interconnected micro‐/meso‐pore channels and the change of the long‐range ordering of both COPs. The successive hierarchical‐pore‐filling mechanism promotes R12 molecular adsorption via moderate van der Waals adsorbate‐adsorbent interactions in the micropores of both COPs at low pressure followed by adsorbate‐adsorbate interactions in the extra‐voids created at moderate to high pressure ranges. This continuous pore‐filling mechanism makes defective COPs as promising sorbents for halocarbon adsorption.

Shen, Jian↗

A phosphorylation-deficient ribosomal protein eS6 is largely functional in Arabidopsis thaliana , rescuing mutant defects from global translation and gene expression to photosynthesis and growth

The eukaryote-specific ribosomal protein of the small subunit eS6 is phosphorylated through the target of rapamycin (TOR) kinase pathway. Although this phosphorylation event responds dynamically to environmental conditions and has been studied for over 50 years, its biochemical and physiological significance remains controversial and poorly understood. Here, we report data from Arabidopsis thaliana, which indicate that plants expressing only a phospho-deficient isoform of eS6 grow essentially normally under laboratory conditions. The eS6z (RPS6A) paralog of eS6 functionally rescued a double mutant in both rps6a and rps6b genes when expressed at approximately twice the wild-type dosage. A mutant isoform of eS6z lacking the major six phosphorylatable serine and threonine residues in its carboxyl-terminal tail also rescued the lethality, rosette growth, and polyribosome loading of the double mutant. This isoform also complemented many mutant phenotypes of rps6 that were newly characterized here, including photosynthetic efficiency, and most of the gene expression defects that were measured by transcriptomics and proteomics. However, compared with plants rescued with a phospho-enabled version of eS6z, the phospho-deficient seedlings retained a mild pointed-leaf phenotype, root growth was reduced, and certain cell cycle-related mRNAs and ribosome biogenesis proteins were misexpressed. The residual defects of the phospho-deficient seedlings could be understood as an incomplete rescue of the rps6 mutant defects. There was little or no evidence for gain-of-function defects. As previously published, the phospho-deficient eS6z also rescued the rps6a and rps6b single mutants; however, phosphorylation of the eS6y (RPS6B) paralog remained lower than predicted, further underscoring that plants can tolerate phospho-deficiency of eS6 well. Our data also yield new insights into how plants cope with mutations in essential, duplicated ribosomal protein isoforms.

60 APPLIED LIFE SCIENCES↗

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

The evolution of defects due to high‐pressure annealing of magnesium ion‐implanted epitaxial GaN grown on high‐quality GaN substrates is investigated. Changes in the implant‐induced strain are quantified as a function of annealing temperature and time. After annealing at 1300 °C for 10 min, the implant‐induced strain is fully relieved and accompanied by the presence of extended defects such as basal plane stacking faults and prismatic loops. Approximately one‐third of the original implant‐induced strain remains after annealing at 700 °C, and 5% of the original strain remains at 1000 °C for 100 min. In all cases, nearly all of the recovered strain occurs within first few minutes of annealing. A prominent increase in the asymmetric (104) triple axis X‐ray rocking curve full width at 0.01 maximum (FW0.01M) is observed after annealing at 1300 °C for 10 min. After annealing at 1300 °C for 100 min, a subsequent decrease in FW0.01M is correlated with a reduction of the extended defect density from 4 × 10 8 to 3 × 10 7 cm −2 , determined through transmission electron microscope (TEM) measurements. Further reduction in the density of the extended defects by optimizing annealing temperature and time is expected to improve the performance of GaN‐based vertical power devices.

Wang, Yekan↗

’t Hooft defects and wall crossing in SQM

In this paper we study the contribution of monopole bubbling to the expectation value of supersymmetric ’t Hooft defects in Lagrangian theories of class S on R 3 × S 1 . This can be understood as the Witten index of an SQM living on the world volume of the ’t Hooft defect that couples to the bulk 4D theory. The computation of this Witten index has many subtleties originating from a continuous spectrum of scattering states along the non-compact vacuum branches. We find that even after properly dealing with the spectral asymmetry, the standard localization result for the ’t Hooft defect does not agree with the result obtained from the AGT correspondence. In this paper we will explicitly show that one must correct the localization result by adding an extra term to the standard Jeffrey-Kirwan residue formula. This extra term accounts for the contribution of ground states localized along the non-compact branches. This extra term restores both the expected symmetry properties of the line defect expectation value and reproduces the results derived using the AGT correspondence.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Surface defect indices and 2d-4d BPS states

We conjecture a formula for the Schur index of four-dimensional N =2 theories coupled to (2, 2) surface defects in terms of the 2d-4d BPS spectrum in the Coulomb phase of the theory. The key ingredient in our conjecture is a refined 2d-4d wall-crossing invariant, which we also formulate. Our result intertwines recent conjectures expressing the four-dimensional Schur index in terms of infrared BPS particles, with the Cecotti-Vafa formula for limits of the elliptic genus in terms of two-dimensional BPS solitons. We extend our discussion to framed 2d-4d BPS states, and use this to demonstrate a general relationship between surface defect indices and line defect indices. We illustrate our results in the example of su (2) super Yang-Mills coupled to the CP 1 sigma model defect.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Deep-learning based artificial intelligence tool for melt pools and defect segmentation

Accelerating fabrication of additively manufactured components with precise microstructures is important for quality and qualification of built parts, as well as for a fundamental understanding of process improvement. Accomplishing this requires fast and robust characterization of melt pool geometries and structural defects in images. This paper proposes a pragmatic approach based on implementation of deep learning models and self-consistent workflow that enable systematic segmentation of defects and melt pools in optical images. Deep learning is based on an image-to-image translation–conditional generative adversarial neural network architecture. An artificial intelligence (AI) tool based on this deep learning model enables fast and incrementally more accurate predictions of the prevalent geometric features, including melt pool boundaries and printing-induced structural defects. We present statistical analysis of geometric features that is enabled by the AI tool, showing strong spatial correlation of defects and the melt pool boundaries. The correlations of widths and heights of melt pools with dataset processing parameters show the highest sensitivity to thermal influences resulting from laser passes in adjacent and subsequent layer passes. The presented models and tools are demonstrated on the aluminum alloy and datasets produced with different sets of processing parameters. However, they have universal quality and could easily be adapted to different material compositions. The method can be easily generalized to microstructural characterizations other than optical microscopy.

additive manufacturing↗

Significantly increased Raman enhancement on defect-rich O-incorporated 1T-MoS 2 nanosheets

Improving charge transfer is the key to the performance of non-noble metal semiconductor-based surface enhanced Raman scattering (SERS) substrates. In this work, the O-incorporated 1T-MoS 2 nanosheets with rich sulfur defects (ID-MoS 2 ) are obtained by simple calcination of 1T-MoS 2 nanosheets in air atmosphere. Using rhodamine 6G (R6G) as typical probe molecules, ID-MoS 2 nanosheets show ultrahigh Raman enhancement effects with an enhancement factor of 1.24 × 10 7 due to sulfur defects and O incorporation in the 1T-MoS 2 lattice. First-principle density functional theory calculations suggest that the existence of sulfur defects and O incorporation significantly increase the Fermi energy level (E f ) and electronic density of states of ID-MoS 2 . Furthermore, O incorporation can enhance the interactions between the substrate and the adsorbed molecules through electrostatic and hydrogen bonding. All these improve the charge transfer resonance and result in the remarkable SERS activity of ID-MoS 2 nanosheets. This is the first study on the increasing SERS performance of semiconductor substrates by simultaneously employing defect and dopant incorporation. This study provides an approach to optimize the performance of semiconductor-based SERS substrates.

36 MATERIALS SCIENCE↗

The properties of a tunable terahertz multichannel filter from one-dimensional photonic crystal dope by magnetized plasma defect

The terahertz magnetize-field tunable filtering properties in a multichannel filter based on a one-dimensional photonic crystal doped by magnetized plasma are theoretically investigated. The considered structure of (AB){sub 4}(ACB){sub N}(AB){sub 4} is designed, where A and B are two dielectric layers, C is the plasma layer, and N is the defect number. First, the structure can be worked as a multichannel filter whose channel number equals N. Second, the defect mode frequencies are all red-shifted as the ratio of dielectric refractive index or the sum of the A and B layer length increases. Third, we find that the channel frequencies can be shifted as a function of the applied magnetic field and the defect mode frequencies are all red-shifted as the plasma density increases. And the thickness of a plasma layer also affects the intensity, position and number of the defect modes. Therefore, these unusual properties may provide a novel design idea of a tunable terahertz multichannel transmission filter in future.

36 MATERIALS SCIENCE↗

Impact of respiratory motion correction on SPECT myocardial perfusion imaging using a mechanically moving phantom assembly with variable cardiac defects

Background: The aim of this study was to determine the impact of respiratory motion correction on SPECT MPI and on defect detection using a phantom assembly. Methods: SPECT/CT data were acquired using an anthropomorphic phantom with inflatable lungs and with an ECG beating and moving cardiac compartment. The heart motion followed the respiratory pattern in the cranio-caudal direction to simulate normal or deep breathing. Small or large transmural defects were inserted into the myocardial wall of the left ventricle. SPECT/CT images were acquired for each of the four respiratory phases, from exhale to inhale. A respiratory motion correction was applied using an image-based method with transformation parameters derived from the SPECT data by a non-rigid registration algorithm. A report on defect detection from two physicians and a quantitative analysis on MPI data were performed before and after applying motion correction. Results: Respiratory motion correction eliminated artifacts present in the images, resulting in a uniform uptake and reduction of motion blurring, especially in the inferior and anterior regions of the LV myocardial walls. The physicians’ report after motion correction showed that images were corrected for motion. Conclusions: A combination of motion correction with attenuation correction reduces artifacts in SPECT MPI. AC-SPECT images with and without motion correction should be simultaneously inspected to report on small defects.

62 RADIOLOGY AND NUCLEAR MEDICINE↗

Prolonged dipyridamole administration reduces myocardial perfusion defects in experimental chronic Chagas cardiomyopathy

Background: Myocardial perfusion defects (MPD) due to coronary microvascular dysfunction is frequent in chronic Chagas cardiomyopathy (CCC) and may be involved with development of myocardial damage. We investigated whether MPD precedes left ventricular systolic dysfunction and tested the hypothesis that prolonged use of dipyridamole (DIPY) could reduce MPD in an experimental model of CCC in hamsters. Methods and results: We investigated female hamsters 6-months after T. cruzi infection (baseline condition) and control animals, divided into T. cruzi-infected animals treated with DIPY (CH + DIPY) or placebo (CH + PLB); and uninfected animals treated with DIPY (CO + DIPY) or placebo (CO + PLB). The animals were submitted to echocardiogram and rest SPECT-Sestamibi-Tc99m myocardial perfusion scintigraphy. Next, the animals were treated with DIPY (4 mg/kg bid, intraperitoneal) or saline for 30 days, and reevaluated with the same imaging methods. At baseline, the CH + PLB and CH + DIPY groups showed larger areas of perfusion defect (13.2 ± 13.2% and 17.3 ± 13.2%, respectively) compared with CO + PLB and CO + DIPY (3.8 ± 2.2% e 3.5 ± 2.7%, respectively), P < .05. After treatment, we observed: reduction of perfusion defects only in the CH + DIPY group (17.3 ± 13.2% to 6.8 ± 7.6%, P = .001) and reduction of LVEF in CH + DIPY and CH + PLB groups (from 65.3 ± 9.0% to 53.6 ± 6.9% and from 69.3 ± 5.0% to 54.4 ± 8.6%, respectively, P < .001). Quantitative histology revealed greater extents of inflammation and interstitial fibrosis in both Chagas groups, compared with control group (P < .001), but no difference between Chagas groups (P > .05). Conclusions: The prolonged use of DIPY in this experimental model of CCC has reduced the rest myocardial perfusion defects, supporting the notion that those areas correspond to viable hypoperfused myocardium.

62 RADIOLOGY AND NUCLEAR MEDICINE↗

The role of dopant charge state on defect chemistry and grain growth of doped UO 2

Additives are widely used to control the microstructure of materials via their effect on defect chemistry during sintering. As the primary nuclear fuel, the properties of UO 2 are crucial for safe and efficient reactor operation. UO 2 has been manipulated by fuel vendors through doping to enhance grain size to provide improved fission gas retention and plasticity. In this work the common phenomenon that governs the effect of Mg, Ti, V, Cr, Mn, and Fe doping of UO 2 for enhanced grain growth is revealed, elucidating experimental observations. A combined density functional theory and empirical potential description of defect free energy is used to calculate the doped UO 2 defect concentrations as a function of temperature. At high (sintering) temperatures all dopants studied transition to a positively charged interstitial defect. Furthermore, a number of dopants (Ti, V, Cr, and Mn) do so in sufficiently high concentrations to greatly increase the negatively charged uranium vacancy concentration. High uranium vacancy concentrations can enhance grain growth and fission gas diffusion. Mg and Fe also enhance uranium vacancy concentrations but to a lesser extent, while Al has no impact. The enhanced uranium vacancy concentrations, associated with solution of dopants interstitially, is proposed as the mechanism responsible for the enlarged grains seen experimentally in (Ti/V/Cr/Mg)-doped systems. Mn- and V-doped UO 2 have been predicted to have higher uranium vacancy concentrations than the more widely used Cr-doped UO 2 , leading to higher grain growth and fission gas diffusivity.

36 MATERIALS SCIENCE↗

Nanoscale mapping of point defect concentrations with $\mathrm{4D-STEM}$

Vacancies are missing atoms in a crystalline material, and occur both at equilibrium (varying with temperature) and out of equilibrium such as when crystalline materials are damaged with radiation or corrosion. While we know of their importance, particularly regarding diffusive mechanisms, it is not straightforward to experimentally measure their concentration or to visualize them directly. Traditionally, measurements such as positron annihilation spectroscopy and to some degree X-ray diffraction can measure average concentrations, but generally lack the ability to visualize or quantify a heterogenous concentration of vacancies that can occur at the level of individual defects and microstructural features. Here, we present a method to map vacancy concentrations and their distribution using local lattice parameter measurements with a high-resolution electron microscope. Our method utilizes a Au thin film as a model to demonstrate the method via four-dimensional scanning transmission electron microscopy (4D-STEM) by correlating the differences between changes in lattice parameter and the volumetric thermal expansion during in situ heating experiments. The vacancy mapping methodology is also applied to non-equilibrium defects accumulated in pure Al via knock-on electron beam irradiation. Our method demonstrates the ability to map point defect concentrations in heterogeneous systems in situ with nanometer spatial resolution. The result is a technique that can provide direct measurements of vacancy concentrations at the level of individual defects in studies of materials in and out of equilibrium.

36 MATERIALS SCIENCE↗

Origins of wear-induced tungsten corrosion defects in semiconductor manufacturing during tungsten chemical mechanical polishing

During chemical mechanical polishing (CMP) process optimization, a unique corrosion defect was identified in the tungsten (W) contact plugs, which were investigated to develop practical solutions to improve CMP mass productivity. The corrosion defect occurred in the absence of external incident energy and was observed to occur only at the W plugs connected to the P + /n-well close to the wafer edge. To examine the root cause of the corrosion, a series of experiments was carried out at each W CMP step, using in-line defect inspection. Additional experiments were conducted using on-line inductively coupled plasma mass spectrometry (ICP-MS) to understand pH- and potential-dependent electrochemical dissolution behaviors of W. Experimentally, W corrosion was confirmed to be exacerbated if the surface oxide of the W plugs is removed by the deionized water (DIW) rinsing step under wafer pressurization, then exposed to DIW and alkaline cleaning solution. Although the DIW rinsing step is commonly performed to clean polishing pads right after the main polishing, a small amount of applied pressure (0.5 psi) without slurry supply can lead to corrosion defects. Finally, this wear-induced corrosion of the W plugs can be prevented by removing the applied pressure during the post DIW rinsing step of W CMP.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Defect engineering of mesoporous nickel ferrite and its application for highly enhanced water oxidation catalysis

Spinel nickel ferrite (NiFe 2 O 4 ) emerges as a promising low-cost catalyst for water splitting but it usually shows low catalytic activity because of its limited number of active sites and poor conductivity. For the first time, herein we have successfully overcome its weaknesses using defect engineering approach by creating oxygen vacancies in NiFe 2 O 4 . The existence of oxygen vacancy not only shifts up the d-band center, strengthens the adsorption of H 2 O, and thus provides more active catalytic sites, but also tunes the electron configuration and creates massive number of defective donor states in the band gap to facilitate charge transfer processes. The optimal defective catalyst showed significantly enhanced catalytic OER performance with an OER overpotential as low as 0.35 V at 10 mA cm -2 and a Tafel slope of only ~40 mV dec -1 . Moreover, the impressive specific mass and area current density of 17.5 A g -1 and 0.106 A m -2 at 1.58 V vs. Finally, RHE have been achieved, which are ~23 and ~36 times higher than that of defect-free counterpart, respectively.

36 MATERIALS SCIENCE↗