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Machining-inducted residual strain and ductile-brittle transition in sapphire revealed by X-ray nanoprobe diffraction microscopy

Hard X-ray nanoprobe diffraction microscopy is employed to investigate machining-induced residual lattice strain in single-crystal sapphire following ultra-precision orthogonal plunge cutting. In this study, tilt-series and single-angle acquisition strategies are systematically compared to evaluate their capability for resolving lattice variations associated with the machining process. An analytical framework is developed to enable the efficient and reliable extraction of strains, which serve as strain-based indicators of changes in the dominant deformation mechanism. The measured high-dimensional strain exhibits spatial heterogeneity and systematic evolution along the cutting path, consistent with deformation-regime changes from ductile response to crack-prone behavior.

Liang, Rui↗

Determination of impurities in cubic boron nitride (cBN) by inductively coupled plasma mass spectrometry (ICPMS)

The phase stability of cBN is critically dependent on the content and amount of impurities present. While studies have shown qualitatively that the addition of certain impurities can either increase or decrease the cBN-hBN phase transition temperature, studies have yet to show this effect quantitatively. This is because analytical methods to characterize minor and trace impurities in cBN are currently lacking. To this end, we present flux fusion methods capable of fully digesting cBN samples for ICPMS analyses. The materials used in this study are commercially available cBN powders in three different sizes. Two types of fluxes (LiOH and NaOH·H 2 O) are utilized so that both Li and Na impurities can be determined. To ensure the accuracy of Si measurements, a column chromatography method has been developed to purify Si from flux materials in order to increase the amount of dissolved sample sent to the ICP. Detection limits have been determined using procedural blanks and are found to be below 20 μg/g for all 58 elements analyzed except for Si, for which the detection limit is 312 μg/g. Nonetheless, all cBN powders studied are found to have high Si impurity levels that are above detection limit. This study provides a much-needed analytical protocol to enable comprehensive screening of impurities in cBN.

36 MATERIALS SCIENCE↗