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At least 865 records · Page 48

Dielectric Ceramics in Nanosheet Form. Final report

This is the final project report detailing the preparation and chemistry of dielectric nanosheets. The major aim of this project was to develop two-dimensional dielectric materials in parallel with efforts to develop two-dimensional semiconductors. Dielectrics are insulating materials that can be polarized, leading to outstanding ferroelectric, ferromagnetic, piezoelectric, pyroelectric, electrostrictive, and electro-optical properties. Dielectric materials are arguably equally important as metallic and semiconducting materials in device engineering, and thus dielectric nanosheets would be valuable building blocks in multitudinous downscaled applications. The specific goals of this project encompassed the development of innovative chemical synthesis methodologies for preparing dielectric materials in freestanding, two-dimensional <10 nm thickness (nanosheet) form; characterization of the fundamental properties of the resulting nanosheets;

36 MATERIALS SCIENCE↗

Polarization-dependent photoemission electron microscopy for domain imaging of inorganic and molecular materials

Polarization-dependent photoemission electron microscopy (PD-PEEM) exploits spatial variation in the optical selection rules of materials to image domain formation and material organization on the nanoscale. In this Perspective, we discuss the mechanism of PD-PEEM that results in the observed image contrast in experiments and provide examples of a wide range of material domain structures that PD-PEEM has been able to elucidate, including molecular and polymer domains, local electronic structure and defect symmetry, (anti)ferroelectricity, and ferromagnetism. As a result, we discuss challenges and new directions that are possible with this tool for probing domain structure in materials, including investigating the formation of transient ordered states, multiferroics, and the influence of molecular and polymer order and disorder on excited state dynamics and charge transport.

36 MATERIALS SCIENCE↗

Direct Observation of Room–Temperature Magnetic Skyrmion Motion Driven by Ultra–Low Current Density in Van Der Waals Ferromagnets

The recent discovery of room-temperature ferromagnetism in 2D van der Waals (vdW) materials, such as Fe 3 GaTe 2 (FGaT), has garnered significant interest in offering a robust platform for 2D spintronic applications. Various fundamental operations essential for the realization of 2D spintronics devices are experimentally confirmed using these materials at room temperature, such as current-induced magnetization switching or tunneling magnetoresistance. Nevertheless, the potential applications of magnetic skyrmions in FGaT systems at room temperature remain unexplored. In this work, the current-induced generation of magnetic skyrmions in FGaT flakes employing high-resolution magnetic transmission soft X-ray microscopy is introduced, supported by a feasible mechanism based on thermal effects. Furthermore, direct observation of the current-induced magnetic skyrmion motion at room temperature in FGaT flakes is presented with ultra-low threshold current density. This work highlights the potential of FGaT as a foundation for room-temperature-operating 2D skyrmion device applications.

2D ferromagnets↗

Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Normal and inverse bulk spin valve effects in single-crystal ruthenates

The current-perpendicular-to-plane magnetoresistivity (CPP-MR)/ρ c (B) is investigated in single crystal ruthenates Ca 3 (Ru 1-x Ti x ) 2 O 7 (x = 0.02). This material is naturally composed of ferromagnetic metallic bilayers (Ru,Ti)O 2 separated by nonmagnetic insulating layers of Ca 2 O 2 , resulting in tunneling magnetoresistivity. Non-monotonic ρ c (B) curves as well as the inverse spin valve effect are observed around the magnetic phase transition associating with the metal-to-insulator transition. A spin dependent tunneling model with alternate distribution of hard and soft magnetic layers [(Ru,Ti)O 2 ] is proposed to explain the exotic CPP-MR behavior. Finally, this eccentric CPP-MR behavior highlights the strong spin-charge coupling in double-layered ruthenates and provides a potential material for spintronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ultrafast Control of Interfacial Exchange Coupling in Ferromagnetic Bilayer

Fast spin manipulation in magnetic heterostructures, where magnetic interactions between different materials often define the functionality of devices, is a key issue in the development of ultrafast spintronics. Although recently developed optical approaches such as ultrafast spin-transfer and spin–orbit torques open new pathways to fast spin manipulation, these processes do not fully utilize the unique possibilities offered by interfacial magnetic coupling effects in ferromagnetic multilayer systems. Here, ultrafast optically controlled interfacial exchange interactions in the ferromagnetic Co 2 FeAl/(Ga,Mn)As system at low laser fluence levels are experimentally demonstrated. The excitation efficiency of Co 2 FeAl with the (Ga,Mn)As layer is 30–40 times higher than the case with the GaAs layer at 5 K due to the modification of exchange coupling interaction via photoexcited charge transfer between the two ferromagnetic layers. In addition, the coherent spin precessions persist to room temperature, excluding the drive of pump-modulated magnetization in the (Ga,Mn)As layer and indicating a proximity-effect-related optical excitation mechanism. The results highlight the importance of interfacial exchange interactions in ferromagnetic heterostructures and how these magnetic coupling effects can be utilized for ultrafast, low-power spin manipulation.

36 MATERIALS SCIENCE↗

Effects of molybdenum doping and thermal annealing on the physical properties of amorphous In–Zn–O films

Highlights: • The effects of Mo doping and thermal annealing on a-IZO films were studied. • The carrier mobility of Mo-doped a-IZO films was enhanced by thermal annealing. • The optical bandgap of a-IZO films was unaffected by Mo doping. • Ferromagnetism was observed in Mo-doped a-IZO films after annealing. - Abstract: Amorphous In–Zn–O (a-IZO) films doped with Mo were prepared on glass substrates by using magnetron co-sputtering technique. The Mo concentration was controlled by varying the sputtering power applied on the Mo target. The effects of Mo doping and thermal annealing on the electrical, optical and magnetic properties of the a-IZO films were studied. The electrical properties of a-IZO films were found to be strongly affected by Mo doping and thermal annealing. The optical transmission near the absorption edge of a-IZO films is enhanced by Mo doping due to the decrease in reflection. The optical bandgap estimated to be 3.2 eV of a-IZO films is unaffected by Mo doping and thermal annealing. Moreover, some of Mo-doped films exhibit room-temperature ferromagnetism after annealing.

36 MATERIALS SCIENCE↗

Unconventional magnetisation texture in graphene/cobalt hybrids

Magnetic domain structure and spin-dependent reflectivity measurements on cobalt thin films intercalated at the graphene/Ir(111) interface are investigated using spin-polarised low-energy electron microscopy. We find that graphene-covered cobalt films have surprising magnetic properties. Vectorial imaging of magnetic domains reveals an unusually gradual thickness-dependent spin reorientation transition, in which magnetisation rotates from out-of-the-film plane to the in-plane direction by less than 10° per cobalt monolayer. During this transition, cobalt films have a meandering spin texture, characterised by a complex, three-dimensional, wavy magnetisation pattern. In addition, spectroscopy measurements suggest that the electronic band structure of the unoccupied states is essentially spin-independent already a few electron-Volts above the vacuum level. These properties strikingly differ from those of pristine cobalt films and could open new prospects in surface magnetism.

36 MATERIALS SCIENCE↗

Anisotropic magnetic entropy change in Cr 2 X 2 Te 6 ( X = Si and Ge )

Intrinsic, two-dimensional (2D) ferromagnetic semiconductors are an important class of materials for spintronics applications. Cr 2 X 2 Te 6 ( X = Si and Ge ) semiconductors show 2D Ising-like ferromagnetism, which is preserved in few-layer devices. The maximum magnetic entropy change associated with the critical properties around the ferromagnetic transition for Cr 2 Si 2 Te 6 - ΔS$max\atop{M}$ ~ 5.05 J kg -1 K -1 is much larger than - ΔS$max\atop{M}$ ~ 2.64 J kg -1 K -1 for Cr 2 Ge 2 Te 6 with an out-of-plane field change of 5 T. The rescaled - ΔS M (T,H) curves collapse onto a universal curve independent of temperature and field for both materials. Here, this indicates similar critical behavior and 2D Ising magnetism, confirming the magnetocrystalline anisotropy that could preserve the long-range ferromagnetism in a few layers of Cr 2 X 2 Te 6 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic and high frequency properties of nanogranular CoFe-yttrium-doped zirconia films

Soft magnetic nanogranular FeCo-Yttrium-doped Zirconia thin films were fabricated using RF magnetron sputtering at different sputtering power. It was found that film electrical resistivity (ρ) decreased steeply with the increase of sputtering power, while both saturation magnetization (4πM{sub s}) and natural ferromagnetic resonant frequency (ƒ{sub r}) increased with the sputtering power ascending from 100 W to 200 W, but decreased when sputtering power exceeded 200 W. X-ray diffraction analysis and transmission electron microscopy confirmed that the films were nanocrystalline/amorphous composites. A saturation magnetization as high as 15.4 kGs and a ferromagnetic resonance frequency above 3 GHz were obtained.

36 MATERIALS SCIENCE↗

Recent developments on 2D magnetic materials: challenges and opportunities

The emergence of two-dimensional (2D) magnetic materials exhibiting strong magnetization at ultrathin limits above room temperature are promising for miniaturization of devices beyond Moore’s law for future energy efficient nano-electronic devices. Here, the current status, different mechanisms for the existence of magnetism, spin current injection and other magnetic properties of monolayer to few-layers of various 2D magnetic materials are reviewed. Some of the promising applications of these materials are spintronics devices such as spin valves, spin tunnel field-effect transistors, and spin filtering magnetic tunnel junctions. Due to the tunable electronic properties of these 2D materials, it's quite interesting to inject the spin current with suitable ferromagnetic contacts. For instance,black phosphorus is a layered material with a small Schottky barrier height capable of injecting spin current. This review includes many recently explored 2D magnetic materials ranging from exfoliated 2D crystals to CVD grown materials from single to several layers, demonstrating tunable layer dependent magnetic properties. We also explore some of the promising theoretical study based on 2D magnetic compounds such as 2D alkali-based chromium chalcogenides, which shows ferromagnetic as well as semiconducting behavior. The layer-dependent magnetic ordering has been observed in layered compounds like 1T-CrTe 2 , VSe 2 , CrI 3 , and Fe 3 GeTe 2 , which have great potential for the future applications in magnetic based electronic devices. Finally, we emphasize the challenges, opportunities and future directions of the 2D magnetic materials, where new discoveries might have outstanding impact in transformational scientific breakthroughs towards memory, spintronics, optoelectronics and other multifunctional device applications.

36 MATERIALS SCIENCE↗

Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics

We investigate angular dependent spin-orbit torques from the spin Hall effect in a metallic antiferromagnet using the spin-torque ferromagnetic resonance technique. The large spin Hall effect exists in PtMn, a prototypical CuAu-I-type metallic antiferromagnet. By applying epitaxial growth, we previously reported an appreciable difference in spin-orbit torques for c- and a-axis orientated samples, implying anisotropic effects in magnetically ordered materials. In this work we demonstrate through bipolar-magnetic-field experiments a small but noticeable asymmetric behavior in the spin-transfer-torque that appears as a hysteresis effect. We also suggest that metallic antiferromagnets may be good candidates for the investigation of various unidirectional effects related to novel spin-orbitronics phenomena.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhanced interfacial ferromagnetism and exchange bias in (111)-oriented LaNiO 3 / CaMnO 3 superlattices

Emergent properties of complex oxide interfaces are based on interface reconstruction that is driven by mismatch of electronic bands, valence states, interaction lengths, and even crystal symmetry of the interface. In particular, emergent ferromagnetism at the interface of two materials that do not exhibit ferro- or ferrimagnetism in the bulk has been stabilized as a result of competing exchange interactions. When LaNiO 3 and CaMnO 3 , which are a paramagnetic metal and antiferromagnetic insulator in the bulk, respectively, are brought together, ferromagnetism emerges at the interface. Here we show that in (111)-oriented LaNiO 3 / CaMnO 3 (LNO/CMO) superlattices, Ni 2+ -Mn 4+ superexchange interactions due to polar mismatch at the LNO/CMO interfaces are responsible for the emergent ferromagnetism. Compared to (001)-oriented LNO/CMO superlattices, (111)-oriented LNO/CMO superlattices exhibit enhanced interfacial ferromagnetism with a T C > 200 K, greater than the bulk antiferromagnetic transition temperature of CaMnO 3 and a saturated magnetic moment enhanced by up to a factor of 3. Furthermore, we observe exchange bias in (111)-oriented superlattices. The strong exchange interactions along the (111) interface, manifest in the enhanced T c and exchange bias, make this class of CMO-based materials with (111)-oriented interfaces good candidates for low-dimensional spin-polarized materials in spintronic applications.

36 MATERIALS SCIENCE↗

The structure and electronic properties of hexagonal Fe{sub 2}Si

On the basis of first principle calculations, we show that a hexagonal structure of Fe{sub 2}Si is a ferromagnetic crystal. The result of the phonon spectra indicates that it is a stable structure. Such material exhibits a spin-polarized and half-metal-like band structure. From the calculations of generalized gradient approximation, metallic and semiconducting behaviors are observed with a direct and nearly 0 eV band gap in various spin channels. The densities of states in the vicinity of the Fermi level is mainly contributed from the d-electrons of Fe. We calculate the reflection spectrum of Fe{sub 2}Si, which has minima at 275 nm and 3300 nm with reflectance of 0.27 and 0.49, respectively. Such results may provide a reference for the search of hexagonal Fe{sub 2}Si in experiments. With this band characteristic, the material may be applied in the field of novel spintronics devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ferromagnetism and Nonmetallic Transport of Thin-Film α - FeSi 2 : A Stabilized Metastable Material

The epitaxially stabilized metallic α - FeSi 2 thin films on Si(001) were grown using pulsed laser deposition. While the bulk material of α - FeSi 2 is a high temperature metastable phase and nonmagnetic, the thin film is stabilized at room temperature and shows unusual electronic transport and magnetic properties due to strain modification. The transport renders two different conducting states with a strong crossover at 50 K accompanied by an onset of ferromagnetism as well as a substantial magnetocaloric effect and magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of α - FeSi 2 obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our findings provide an example of a tailored material with interesting physics properties for practical applications.

36 MATERIALS SCIENCE↗

Half Metallic Ferromagnetic Character in ZnXP{sub 2} (X = Ge, Si) Chalcopyrites Doped with Mn

The electronic and the magnetic properties of ZnXP{sub 2} (X = Ge, Si) were studied using the Korring-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA). The total and partial density of state (DOS) are computed for different Mn concentrations. The total magnetic moment, FM and DLM energies, and their variation as well as Curie temperature are also given. It is shown that the substitution of X cations (X = Ge, Si) by Mn atoms in ZnXP{sub 2} chalcopyrites leads to half metallic ferromagnetic character with double exchange mechanism. Thus, the critical temperature can be controlled by varying the concentration of manganese impurity.

36 MATERIALS SCIENCE↗

Chirality reversal of magnetic solitons in chiral Cr 1/3 TaS 2

Ferromagnetism in two-dimensional (2D) materials provides an ideal platform to study emergent electromagnetic phenomena in low dimensions for future spintronics. In magnetic-element intercalated transition metal dichalcogenides, topologically nontrivial spin textures, such as chiral helimagnetic spin states and chiral soliton lattices, are realized due to the chiral lattice distortions induced by intercalated magnetic ions. Consequently, the magnetic chirality is predictably determined by the sign of antisymmetric exchange interaction (or Dzyaloshinskii–Moriya interaction, DMI) vector that is coupled to the underlying crystal chirality. Here, using cryogenic Lorentz phase microscopy, we directly observed the chirality reversal behavior of the chiral soliton lattices in Cr 1/3 TaS 2 across the structural defects. We show that a partial 1 T stacking in 2H-TaS 2 locally reduces DMI, leading to magnetic chirality reversal with direct atomic resolution imaging. Furthermore, our experimental results show that manipulation of stacking sequence provides a viable way to control the chirality of topologically nontrivial soliton lattices in 2D magnets.

2D materials↗