Radiation effects in silicon solar cells Quarterly report
Electron irradiation damage and annealing in lithium diffused n type silicon
SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Electron irradiation damage and annealing in lithium diffused n type silicon
Interfacial chemistry and energetics significantly impact the performance of photovoltaic devices. In the case of Pb-containing organic metal halide perovskites, photoelectron spectroscopy has been used to determine the energetic alignment of frontier electronic energy levels at various interfaces present in the photovoltaic device. For the Sn-containing analogues, which are less toxic, no such measurements have been made. Through a combination of ultraviolet, inverse, and X-ray photoelectron spectroscopy (UPS, IPES, and XPS, respectively) measurements taken at varying thickness increments during stepwise deposition of C 60 on FASnI 3 , we present the first direct measurements of the frontier electronic energy levels across the FASnI 3 /C 60 interface. The results show band bending in both materials and transport gap widening in FASnI 3 at the interface with C 60 . The XPS results show that iodide diffuses into C 60 and results in n-doping of C 60 . This iodide diffusion out of FASnI 3 impacts the valence and conduction band energies of FASnI 3 more than the core levels, with the core level shifts displaying a different trend than the valence and conduction bands. Surface treatment of FASnI 3 with carboxylic acids and bulky ammonium substituted surface ligands results in slight alterations in the interfacial energetics, and all surface ligands result in similar or improved PV performance relative to the untreated devices. Finally, the greatest PV stability results from treatment with a fluorinated carboxylic acid derivative; however, iodide diffusion is still observed to occur with this surface ligand.
An improved solar cell module for use in terrestrial environments is disclosed. It is characterized by: (1) an internally reflective plate having a planar surface of incidence and an opposed textured surface (2) a plurality of uniformly spaced silicon solar cells having the active surfaces thereof bonded to portions of the textured surface, and (3) a layer of diffusely reflective matter applied to the textured surface in surrounding relation with the solar cells for reflecting solar energy. The solar energy then strikes the surface of incidence at such angles as to be internally re-reflected and caused to progress toward the active surfaces of the solar cells, whereby concentration of incident flux on the solar cell is achieved without increased module depth.
A total of 11 scatter-free electron events from McMath plage region 8905 were observed by IMP 4 during the period from 29 July to 3 August 1967. The transit times and duration of these electron events are examined in detail. The duration of 170- to 1000-keV electrons shows a strong dependence upon the heliolongitude of the associated flare. Typical values of the duration full width at half maximum vary from 4 min at 50 deg W to 12 min at 10 deg and 90 deg W heliolongitudes. In addition, the difference in times at which the maximum intensities of the 22- to 45-keV and 170- to 1000-keV electrons occur is observed to change from 18 min near 50 deg W to 13 min at 10 deg and 90 deg W heliolongitudes. An idealized two-dimensional diffusion model for the transport of these electrons in the solar corona is proposed. The 22- to 45-keV electrons escape promptly from flare site to the feet of the interplanetary magnetic field lines, whereas 170- to 1000-keV electrons suffer slight scattering. The diffusion coefficient for 170- to 1000-keV electrons is estimated to be 3 X 10 to the 18th power sq cm/sec. Finally, a possible relation between the scatter-free and the classical diffusive-type electron events is discussed.
Satellite instruments operating in the reflective solar wavelength region require accurate and precise determination of the Bidirectional Reflectance Factor (BRF) of laboratory-based diffusers used in their pre-flight and on-orbit radiometric calibrations. BRF measurements are required throughout the reflected-solar spectrum from the ultraviolet through the shortwave infrared. Spectralon diffusers are commonly used as a reflectance standard for bidirectional and hemispherical geometries. The Diffuser Calibration Laboratory (DCaL) at NASA's Goddard Space Flight Center is a secondary calibration facility with reflectance measurements traceable to those made by the Spectral Tri-function Automated Reference Reflectometer (STARR) facility at the National Institute of Standards and Technology (NIST). For more than two decades, the DCaL has provided numerous NASA projects with BRF data in the ultraviolet (UV), visible (VIS) and the Near infraRed (NIR) spectral regions. Presented in this paper are measurements of BRF from 1475nm to 1625nm obtained using an indium gallium arsenide detector and a tunable coherent light source. The sample was a 2 inch diameter, 99% white Spectralon target. The BRF results are discussed and compared to empirically generated data from a model based on NIST certified values of 6deg directional/hemispherical spectral reflectance factors from 900nm to 2500nm. Employing a new NIST capability for measuring bidirectional reflectance using a cooled, extended InGaAs detector, BRF calibration measurements of the same sample were also made using NIST's STARR from 1475nm to 1625nm at an incident angle of 0deg and at viewing angles of 40deg, 45deg, and 50deg. The total combined uncertainty for BRF in this ShortWave Infrared (SWIR) range is less than 1%. This measurement capability will evolve into a BRF calibration service in SWIR region in support of NASA remote sensing missions. Keywords: BRF, BRDF, Calibration, Spectralon, Reflectance, Remote Sensing.
Recent record efficiency Si cells have had an interdigitated back contact (IBC) design where both positive and negative contacts are fabricated on the back side of the Si wafer. Many industry groups have investigated IBC cells but used photolithography to pattern the rear contacts although it is considered impractical for low cost, high volume manufacturing. Alternative patterning methods using lasers and mechanical masking have been utilized in fabrication of patterned regions in IBC Si solar cells to replace photolithography. Another exciting advance in Si solar cell technology has been replacing the high temperature diffusion of doped regions inside the crystalline Si wafer with low temperature deposition of very thin layers of doped amorphous hydrogenated Si (a-Si:H) on the Si wafer. This is called a Si heterojunction (HJ) device. The a-Si:H provides excellent passivation of surface defects and has produced the highest open circuit voltages (VOC) of any Si solar cell device structure. The Institute of Energy Conversion (IEC) demonstrated the first IBC-HJ solar cell combining these two strategies in 2007 and has fabricated IBC-HJ cells with 20% efficiency using three photolithography steps. Despite the demonstrated efficiency potential of this device by industry groups (>26%) there is no commercial production because of the challenges of patterning and processing the structure in an industrial environment. Our work sought to address that challenge. The objective of this 3 year project was to develop the processing for the IBC-HJ Si solar cell using lasers for patterning and contact formation instead of photolithography. Laser patterning enables rapid, contactless manufacturing of patterned regions. We intensively studied laser fired contacts, laser patterning of the a-Si multi-layer stacks and metal layers and the use of plasma shadow masks. After an exhaustive focus in the first year on the laser fired emitter (LFE) and contact (LFC), we were unable to achieve VOC greater than 660 mV, compared to the 720 mV required to meet our milestones. We discovered that an additional issue with our original IBC structure was the presence of an inversion layer at the back surface connecting the p and n regions which reduced the VOC and fill factor (FF). We developed innovative methods for characterizing the inversion layer. These two limitations in the original design lead to development of a new IBC-HJ process sequence and device structure which we called Plasma Masked Laser Processed (PMLP). It retained the original high efficiency features including manufacturability. The LFC was replaced with a standard n-type a-Si HJ contact. The inversion layer was eliminated by replacing the previous p-type stack in the gap with an n-type or SiN stack. The PMLP used laser ablation of a multi-layer a-Si stack followed by chemical etching to open the n-contact. It required deposition of a patterned stack through a mask in the plasma deposition chamber. This turned out to be a source of significant problems due to inevitable unwanted deposition ‘leakage’ under the mask. This formed a blocking contact on the emitter which significantly reduced Voc and FF. Several iterations in PMLP device structure and chemical etching steps resulted in a large improvements, e.g. the efficiency increasing from 3 to 15% and Voc from 450 to 660 mV but they were unable to completely eliminate it. The best IBC-HJ device we fabricated had only 15% efficiency. For perspective, our standard FHJ devices had 20% efficiency.
Velocity space distributions of picked up cometary protons were measured by the ion mass spectrometer on the Giotto spacecraft upstream of the Halley bow shock. Large pitch angle anisotropies were observed at all distances greater than 1.2 x 10 to the 6th km from the comet. As expected, pitch angle diffusion was much more rapid than energy diffusion. When the field was quasi-parallel to the solar wind velocity vector, it was possible to discern the effect of pitch angle scattering by sunward propagating, field-aligned hydromagnetic waves, but there is evidence for other scattering modes as well. For quasi-perpendicular geometries, the pitch angle distribution was very asymmetric with phase space density peaks near pitch angles of 180 deg. It is suggested that the asymmetric pitch angle distribution may be caused by global rather than local wave-particle interactions. Just outside the shock, the pitch angle distribution was nearly isotropic and the radius of the pickup shell increased significantly.
Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.
The solar dynamo is the process by which the Sun's magnetic field is generated through the interaction of the field with convection and rotation. In this, it is kin to planetary dynamos and other stellar dynamos. Although the precise mechanism by which the Sun generates its field remains poorly understood despite decades of theoretical and observational work, recent advances suggest that solutions to this solar dynamo problem may be forthcoming. Two basic processes are involved in dynamo activity. When the fluid stresses dominate the magnetic stresses (high plasma beta = 8(pi)rho/B(sup 2)), shear flows can stretch magnetic field lines in the direction of the shear (the "alpha effect") and helical flows can lift and twist field lines into orthogonal planes (the "alpha effect"). These two processes can be active anywhere in the solar convection zone but with different results depending upon their relative strengths and signs. Little is known about how and where these processes occur. Other processes, such as magnetic diffusion and the effects of the fine scale structure of the solar magnetic field, pose additional problems.
Abstract Inorganic perovskites are known for their excellent photothermal stability; however, the photothermal stability of all‐inorganic n‐i‐p perovskite solar cells (PSCs) is compromised due to ion diffusion and free radical‐induced degradation caused by the use of doped spiro‐OMeTAD hole transport materials (HTMs). In this study, two isomeric donor–acceptor–donor (D–A–D) type small molecules, namely HBT and HiBT, were developed and used as dopant‐free HTMs, using 2,1,3‐benzothiadiazole or benzo[d][1,2,3]thiadiazole as acceptor moieties. The HiBT molecule, with its symmetry‐breaking features, exhibits a large dipole moment, enhanced coordination‐active sites, and a well‐aligned energy level structure, all of which contribute to passivating perovskite surface defects and improving free charge separation. As a result, inorganic CsPbI 3 PSCs with HiBT HTM achieved an impressive power conversion efficiency (PCE) of 20.58%, the highest reported for dopant‐free HTM‐based inorganic PSCs. Moreover, the enhanced hydrophobic properties of HiBT molecules, coupled with their ability to passivate perovskite surface defects, contribute to significantly improved device stability. The unencapsulated devices based on HiBT HTM retained over 83% and 80% of their initial efficiency after being stored at 85 °C for 50 days and undergoing maximum power point (MPP) tracking at 85 °C for 1100 h, respectively. These results highlight that the symmetry‐breaking strategy is an exceptionally effective approach for designing efficient, dopant‐free small molecule HTMs, significantly contributing to both the high efficiency and enhanced stability of all‐inorganic PSCs.
Lead halide perovskites are semiconductor materials which are employed as nonintentionally doped absorbers inserted between two selective carrier transport layers (SCTL), realizing a p-i-n or n-i-p heterojunction. In our study, we have developed and investigated a lateral device, based on methylammonium lead iodide (MAPbI3) in which the p-i-n heterojunction develops in the horizontal direction. Our research suggests that the effective doping level in the MAPbI3 film should be very low, below 1012 cm-3. Along the vertical direction, this doping level is not enough to screen the electric field of the buried heterojunction with the SCTL. The perovskite work function is therefore affected by the work function of the SCTL underneath. From drift-diffusion simulations, we show that intrinsic perovskite-SCTL structures develop mV range surface photovoltages (SPVs) under continuous illumination. However, perovskite-SCTL structures can develop SPVs of hundreds of mV, as confirmed by our measurements. We therefore analyzed the compatibility between low doping and low defect densities in the perovskite layer and such high SPV values using numerical modeling. It is shown that these high SPV values could originate from electronic processes due to large band offsets in the buried perovskite-SCTL heterojunctions, or at the SCTL-transparent conductive oxide (TCO) buried heterojunction. However, such electronic processes can hardly explain the long SPV persistence after switching off the illumination.
Not Available
Thermal stability of organic–inorganic hybrid perovskites (OIHPs) remains as one of the critical challenges against the stable operation of perovskite solar cells (PSCs) in direct sunlight with elevated temperatures. Here, we show that the addition of a polystyrene-co-polyacrylonitrile (SAN) copolymer can significantly enhance thermal stability of OIHPs and improve the stability of the corresponding PSCs by suppressing the migration of organic cations in OHIP. The methylammonium lead iodide (MAPI) with SAN incorporated within the perovskite layer featured a superior thermal stability compared to pure MAPI without SAN, only displaying an average of 5–15% decrease in PCE even after continuous thermal aging for 24 h at 100 °C. The secondary ion mass spectrometry revealed that the thermal degradation of the pure MAPI was largely associated with MA+ out-migration. Conducting atomic force microscopy analysis further indicated that the incorporated SAN led to a suppression of ionic currents present at the grain boundaries of the perovskite film, which was understood by high immiscibility between SAN and MA+ components as confirmed by the experimentally estimated Flory–Huggins parameter between them. This study newly identifies a potential of using polymer grain encapsulation for enhancing thermal stability of OIHPs and their solar cell performance by suppressing the out-diffusion of cationic organic components.
Not Available
This poster provides an overview of progress in international radiometric standards for solar energy applications.
Three stages of solar cosmic rays entry into polar cap atmosphere due to differential arrival of solar electrons, protons and alpha particles
Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. This charged layer was supplied through three mechanisms: (1) applying a positive potential to a transparent electrode separated from the silicon surface by a dielectric, (2) contaminating the oxide layer with positive ions, and (3) forming donor surface states that leave a positive charge on the surface. A movable semi-infinite shadow delineated the extent of sensitivity of the cell due to the inversion region. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.
Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.