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At least 883 records · Page 49

Anomalous lattice expansion of bcc Ta in helium-loaded diamond anvil cells

Anomalous lattice expansion of bcc Ta is observed in helium-loaded diamond anvil cell (DAC) experiments near 6 GPa and above 400 K, while co-loaded W, Mo, and Au exhibit normal thermal expansion. The Ta volume expansion increases with temperature, reaching ~14% near 650 K before plateauing, and is largely retained after recovery to ambient conditions. Time-resolved measurements at 500 K reveal progressive expansion over several hours, consistent with gradual, thermally activated He incorporation. The largely retained expansion during subsequent cooling and holding at 400 K indicates that the incorporated He is predominantly kinetically trapped. The data reveal two distinct regimes: below ~550 K, modest and spatially uniform expansion consistent with interstitial He trapping at isolated, randomly distributed vacancies; above ~550 K, He-vacancy cluster growth producing dramatically larger expansion, peak broadening, and a core–shell microstructure revealed by micron-resolution X-ray diffraction mapping. These results demonstrate that He is not always a passive pressure medium in DAC experiments and reveal a previously unrecognized regime of He-mediated lattice modification in Ta, complementing conventional ion-implantation studies relevant to nuclear and fusion structural materials.

Diamond anvil cell↗

Evaluating the diffusion of Kr in UO 2 and ADOPT TM using time-of-flight elastic recoil detection analysis (ToF-erda)

A combination of 300 keV 84 Kr ion implantation and Time-of-Flight Elastic Recoil Detection Analysis is utilized to investigate the diffusion of Kr in UO 2 and ADOPT TM fuels. Composition depth-profiles on the nanometer scale were obtained, both for as-implanted samples and after annealing at 800°C for 1 hour. Observed drifts in the 84 Kr profiles could be associated with short-range diffusion mechanisms. The approach employed here provides the possibility to make direct comparisons with atomistic scale modelling data, and can be of service as a separate effect test in line with the Accelerated Fuel Qualification initiative.

ADOPT UO2↗

Comparative study of helium bubbles in a Ti-Ta alloy and a Ti/Ta nanocomposite

Here, we investigated the size, density, and distribution of helium (He) bubbles in a Ti-Ta single-phase alloy and a Ti/Ta dual-phase nanocomposite using transmission electron microscopy. The Ti/Ta nanocomposite was fabricated via phase separation during high-temperature annealing of the single-phase Ti-Ta alloy. He ion implantation in the Ti-Ta single-phase alloy leads to the formation of nano-scale He bubbles (~1.7 nm in size, ~2.6×10 5 /μm 3 in volumetric density). He bubbles were found to segregate to grain boundaries. Under identical implantation conditions, numerous He bubbles also formed in the Ti/Ta nanocomposite. Closer inspection revealed that He bubbles in the Ti-rich phase are smaller and of higher volumetric density (~1.2 nm, ~8.4×10 5 /μm 3 ) than those in the Tarich phase (~3 nm, ~1.8×10 5 /μm 3 ) and the single-phase alloy. He bubbles were also observed to decorate phase boundaries, but they were generally smaller than those on grain boundaries. These results suggest that Ti/Ta phase boundaries are less conducive to the growth of large He bubbles than grain boundaries in the Ti-Ta single phase alloy.

36 MATERIALS SCIENCE↗

Elemental Characterization of Neutron-Irradiated Tungsten Using the GD-OES Technique

In reactor-relevant fusion divertor conditions, tungsten (W) will be used as an armor material due to its excellent thermal properties. It will be exposed to impurities from numerous sources, including ion implantation and mixing, neutron transmutation, low-Z plasma-facing-component (PFC) redeposition and codeposition of deuterium and tritium fuel, and trapped helium bubbles. The impurity plasma material–interaction effects are a concern because they can cause gradual degradation of the material and of plasma performance due to dust formation, fuel retention, and even changes to the thermal and mechanical properties of the W armor. It is crucial to measure the amount of impurities in W, and the glow discharge–optical emission spectroscopy (GD-OES) technique is exceptionally well suited for analysis of irradiated samples. GD-OES can measure a sample’s elemental composition by sputtering the surface of the sample, ionizing the eroded material, and measuring the optical emission of the excited atoms. In order for the GD-OES technique to be applied to neutron-irradiated tungsten samples, a mounting system for miniature samples was designed. The sample mounting and centering procedure was successful in measuring the depth distribution of control W and W alloy sample elemental concentrations. These control depth spectra will be used as elemental references for postirradiated samples. The residence time of surface layers was measured, a comparison of signals from different anodes was completed, and the influence of initial surface roughness or nonuniformity was understood. The depth distribution of an arc-welded W-0.4% rhenium (Re) alloy was measured to have a stable Re signal that was distributed evenly in the W matrix. Here, the methods developed here will allow for quantification of impurities and transmutation amounts in neutron-irradiated W. GD-OES is a powerful tool but requires calibration and careful optimization of the parameters to obtain meaningful results.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Spatially dependent cluster dynamics model of He plasma surface interaction in tungsten for fusion relevant conditions

In fusion reactors, plasma facing components (PFC) and, in particular, the divertor will be irradiated with high fluxes of low-energy (similar to 100 eV) helium and hydrogen ions. Tungsten is one of the leading candidate divertor materials for ITER and DEMO fusion reactors. However, the behaviour of tungsten under high dose, coupled helium/hydrogen exposure remains to be fully understood. The PFC response and performance changes are intimately related to microstructural changes, such as the formation of point defect clusters, helium and hydrogen bubbles or dislocation loops. Computational materials' modelling results are described here that investigate the mechanisms controlling microstructural evolution in tungsten. The aim of this study is to understand and predict sub-surface helium bubble growth under high flux helium ion implantation (similar to 10 22 m -2 s -1 ) at high temperatures (>1000 K). Here, we report results from a spatially dependent cluster dynamics model based on reaction-diffusion rate theory to describe the evolution of the microstructure under these conditions. The key input parameters to the model (diffusion coefficients, migration and binding energies, initial defect production) are determined from a combination of atomistic modelling and available experimental data. The results are in good agreement with results of an analytical model that is presented in a separate paper. In particular, it is found that the sub-surface evolution with respect to bubble size and concentration of the helium bubbles strongly depends on the flux and temperature.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Selective area doping of GaN toward high-power applications

Abstract Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

Physics↗

Assessment of the literature about Be-W mixed material layer formation in the fusion reactor environment

Abstract All plasma facing surfaces in a fusion reactor, whether initially pure or an alloy, will rapidly evolve into a mixed material due to plasma-induced erosion, migration and redeposition. Beryllium (Be) erosion from the main chamber, and its transport and deposition on to a tungsten (W) divertor results in the growth of mixed Be-W layers, which can evolve to form beryllides. These Be-W mixed materials exhibit generally less desirable properties than pure tungsten or pure beryllium, such as lower melting points. In order to better understand the parameter space for growth of these alloys, this paper reviews the literature on Be-W mixed material formation experiments—in magnetically confined fusion reactors, in linear plasma test stands, and during thin-film deposition—and on computational modeling of Be-W interactions, as well as briefly assesses the Be-W growth kinetics. We conclude that the following kinetic steps drive the material mixing: adsorption of the implanted/deposited ion on the metal surface; diffusion of the implanted/deposited ion from surface into the bulk, which is accelerated by defects; and loss of deposited material through erosion. Adsorption dominates (or prevents) material mixing in thin-film deposition experiments, whereas diffusion drives material mixing in plasma exposures due to the energetic ion implantation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Bottom-up fabrication of scalable room-temperature diamond quantum computing and sensing technologies

The nitrogen-vacancy (NV) centre in diamond is a premier solid-state defect for quantum information processing and metrology. An integrated diamond quantum device harnesses the collective properties of multiple NV centres, enabling room-temperature quantum computing and sensing. While large-scale devices are poised to fill an important gap in the burgeoning quantum technology landscape, their practical realisation has not been achieved using current top-down fabrication techniques such as ion implantation. Consequently, this necessitates the development of a bottom-up fabrication technique, which is scalable, deterministic, and possesses atomic-scale precision. Informed by existing methods for fabricating phosphorous defect qubits in silicon, we envision a hydrogen depassivation lithography technique for atomically-precise manufacturing of nitrogen-vacancy centres in diamond. This perspective article outlines a viable multi-step procedure for realising scalable fabrication of diamond quantum devices and identifies the key challenges in its development.

CVD↗

Diffusion of acceptor dopants in monoclinic 𝛽−Ga 2⁢ O 3

𝛽−Ga 2 ⁢O 3 is a promising material for next-generation power electronics because of its ultrawide band gap and high critical breakdown voltage. However, realizing its full potential requires precise control over dopant incorporation and stability. In this work, we use first-principles calculations to systematically assess the diffusion behavior of eight potential deep-level substitutional acceptors (Au, Ca, Co, Cu, Fe, Mg, Mn, and Ni) in 𝛽−Ga 2 ⁢O 3 . We consider two key diffusion mechanisms: (i) interstitial diffusion under nonequilibrium conditions relevant to ion implantation, and (ii) trap-limited diffusion (TLD) under near-equilibrium thermal annealing conditions. Our results reveal a strong diffusion anisotropy along the 𝑏 and 𝑐 axes, with dopant behavior governed by competition between diffusion and incorporation (or dissociation) activation energies. Under interstitial diffusion, Ca$^{2+}_{i}$ and Mg$^{2+}_{i}$ show the most favorable combination of low migration and incorporation barriers, making them promising candidates for efficient doping along the 𝑏 and 𝑐 axes, respectively. In contrast, Au$^{+}_{i}$ diffuses readily, but exhibits an incorporation barrier that exceeds 5 eV, rendering it ineffective as a dopant. From a thermal stability perspective, Co$^{2+}_{i}$ shows poor activation but high diffusion barriers, which may suppress undesirable migration at elevated temperatures. Under trap-limited diffusion, the dissociation of dopant-host complexes controls mobility. Mg$^{2+}_{i}$ again emerges as a leading candidate, exhibiting the lowest dissociation barriers along both axes, whereas Co$^{2+}_{i}$ and Fe$^{2+}_{i}$ display the highest barriers, suggesting improved dopant retention under thermal stress. In conclusion, our findings guide dopant selection by balancing activation and thermal stability, essential for robust semi-insulating substrates.

Defects↗

Local metallic and structural properties of the strongly correlated metal $\mathrm{LaNiO_3}$ using $\mathrm{^8Li β-NMR}$

We report β-detected NMR of ion-implanted $\mathrm{^8Li}$ in a single crystal and thin film of the strongly correlated metal $\mathrm{LaNiO_3}$. Spin-lattice relaxation measurements reveal two distinct local environments, both metallic as evident from $T$-linear Korringa $\mathrm{1/T_1}$ below $\mathrm{200K}$ with slopes comparable to other metals. A small approximately temperature-independent Knight shift of $\mathrm{~74 ppm}$ is observed, yielding a normalized Korringa product characteristic of substantial antiferromagnetic correlations.We find no evidence for a magnetic transition from 4 to $\mathrm{310 K}$. The similarity of these features in the two very different samples indicates that they are intrinsic and unrelated to dilute oxygen vacancies. We attribute the two environments to two distinct but similar crystallographic $\mathrm{^8Li}$ sites and not to any form of phase inhomogeneity, but this is inconsistent with the conventional rhombohedral structure of $\mathrm{LaNiO_3}$, and also cannot be simply explained by the common alternative orthorhombic or monoclinic distortions.

36 MATERIALS SCIENCE↗

Lead-related quantum emitters in diamond

Here, we report on quantum emission from Pb-related color centers in diamond following ion implantation and high-temperature vacuum annealing. First-principles calculations predict a negatively charged Pb-vacancy (PbV) center in a split-vacancy configuration, with a zero-phonon transition around 2.4 eV. Cryogenic photoluminescence measurements performed on emitters in nanofabricated pillars reveal several transitions, including a prominent doublet near 520 nm. The splitting of this doublet, 5.7 THz, exceeds that reported for other group-IV centers. These observations are consistent with the PbV center, which is expected to have a combination of narrow optical transitions and stable spin states, making it a promising system for quantum network nodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

β -decay half-lives and β -delayed neutron emission probabilities for several isotopes of Au, Hg, Tl, Pb, and Bi, beyond N = 126

Background: There have been measurements on roughly 230 nuclei that are β-delayed neutron emitters. They range from 8 He up to 150 La . Apart from 210 Tl, with a branching ratio of only 0.007%, no other neutron emitter has been measured beyond A = 150 . Therefore, new data are needed, particularly in the region of heavy nuclei around N = 126 , in order to guide theoretical models and help understand the formation of the third r-process peak at A ~ 195. Purpose: To measure both β-decay half-lives and neutron branching ratios of several neutron-rich Au, Hg, Tl, Pb, and Bi isotopes beyond N = 126 . Method: Ions of interest were produced by fragmentation of a 238 U beam, selected and identified via the GSI-FRS fragment separator. A stack of segmented silicon detectors (SIMBA) was used to measure ion implants and β decays. An array of 30 3 He tubes embedded in a polyethylene matrix (BELEN) was used to detect neutrons with high efficiency and selectivity. A self-triggered digital system is employed to acquire data and to enable time correlations. The latter were analyzed with an analytical model and results for the half-lives and neutron-branching ratios were derived by using the binned maximum-likelihood method. Results: Twenty new β-decay half-lives are reported for 204-206 Au, 208 – 211 Hg, 211 – 216 Tl , 215 – 218 Pb, and 218 – 220 Bi, nine of them for the first time. Neutron emission probabilities are reported for 210, 211 Hg and 211 – 216 Tl . Conclusions: The new β-decay half-lives are in good agreement with previous measurements on nuclei in this region. Lastly, the measured neutron emission probabilities are comparable to or smaller than values predicted by global models such as relativistic Hartree Bogoliubov plus the relativistic quasi-particle random phase approximation (RHB + RQRPA).

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Antiferromagnetic-ferromagnetic phase domain development in nanopatterned FeRh islands

The antiferromagnetic-to-ferromagnetic phase transition in B2-ordered FeRh is imaged in laterally confined nanopatterned islands using photoemission electron microscopy with x-ray magnetic circular dichroism contrast. The resulting magnetic images directly detail the progression in the shape and size of the FM phase domains during heating and cooling through the transition. In 5-μm-square islands this domain development during heating is shown to proceed in three distinct modes - nucleation, growth, and merging - each with subsequently greater energy costs. In 0.5-μm islands, which are smaller than the typical final domain size, the growth mode is stunted and the transition temperature is found to be reduced by 20 K. The modification to the transition temperature is found by high-resolution scanning transmission electron microscopy to be due to a 100-nm chemically disordered edge grain present as a result of ion implantation damage during the patterning. FeRh has unique possibilities for magnetic memory applications; the inevitable changes to its magnetic properties due to subtractive nanofabrication will need to be addressed in future work in order to progress from sheet films to suitable patterned devices.

36 MATERIALS SCIENCE↗

Primary intrinsic defects and their charge transition levels in β–Ga 2 O 3

A steady-state photocapacitance (SSPC) setup directly connected to the beamline of a MeV ion implanter is utilized to study primary intrinsic defects in β – Ga 2 O 3 generated by He implantation at cryogenic temperatures (120 K). At low temperatures, the migration of defects is suppressed, and hence the generation of primary intrinsic defects is expected to prevail. SSPC measurements reveal defect-related optical transitions in halide vapor-phase epitaxy (HVPE) -grown β – Ga 2 O 3 thin films with onset energies at 1.3 ( T 1 ) , 1.7 ( T 2 ) , 1.9 ( T 3 ) , 2.6 ( T 4 ) , 3.7 ( T 5 ) , and 4.2 eV ( T 6 ) . T 2 , T 4 , T 5 , and T 6 were observed in as-received HVPE-grown β – Ga 2 O 3 thin films, whereby T 2 is only sporadically observed. The introduction rates for T 3 , T 4 , as well as T 6 indicate an origin related to primary intrinsic defects. Notably, T 1 and T 3 are only observed after He implantation at cryogenic temperatures. Hybrid-functional calculations were performed to estimate the optical absorption cross-section spectra for the gallium ( Ga i ) and oxygen ( O i ) interstitials as well as the corresponding vacancies ( V Ga and V O , respectively), and compared with the measured onsets for optical absorption found by SSPC measurements. Indeed, we propose T 3 to be associated with Ga i ( + / + 2 ) and/or V GaI ( - 3 / - 2 ) , while T 4 is suggested to be related to V O K ( 0 / + ) ( K = I , II , III ) and/or V GaII ( - 3 / - 2 ) . Additionally, several further charge-state transition levels associated with V GaI and V GaII may contribute to T 4 and T 6 . We further studied the kinetics of the defects created with He implantation by exposing the sample to room temperature. The kinetics observed for T 3 and T 4 further support the proposed assignments of the corresponding defect signatures.

36 MATERIALS SCIENCE↗

Laser-Induced Spectral Diffusion of T Centers in Silicon Nanophotonic Devices

Color centers in silicon are emerging as spin-photon interfaces operating at telecommunication wavelengths. The nanophotonic device integration of silicon color centers via ion implantation leads to significant optical-linewidth broadening, which makes indistinguishable photon generation challenging. Here, we study the optical spectral diffusion of T centers in a silicon photonic crystal cavity. We investigate the linewidth-broadening timescales and origins by measuring the temporal correlations of the resonance frequency under different conditions. Spectral hole-burning measurements reveal no spectral broadening at short timescales from 102 ns to 725 ns. We probe broadening at longer timescales using a check pulse to herald the T-center frequency and a probe pulse to measure the frequency after a wait time. The optical resonance frequency is stable up to 3 ms in the dark. Laser pulses below the silicon band gap applied during the wait time lead to linewidth broadening. Our observations establish laser-induced processes as the dominant spectral-diffusion mechanism for T centers in devices and inform materials and feedback strategies for indistinguishable photon generation.

Zhang, Xueyue↗

Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact

This paper reports on in-depth understanding, modeling, and fabrication of 23.8% efficient 4 cm 2 n-type Float Zone (FZ) silicon cells with a selective boron emitter and photolithography contact on front and tunnel oxide passivating contact on the back. Tunnel oxide passivating contact composed of a very thin chemically grown silicon oxide (~15 Å) capped with plasma-enhanced chemical vapor deposition (PECVD) grown 20 nm n + poly Si gave excellent surface passivation and carrier selectivity with very low saturation current density (~5 fA/cm 2 ). A high-quality boron selective emitter was formed using ion implantation and solid source diffusion to minimize metal recombination and emitter saturation current density. Process optimization resulted in a cell V oc of 712 mV, J sc of 41.2 mA/cm 2 , and FF of 0.811. Here, a simple methodology is used to model these cells which replaces tunnel oxide passivating contact region by electron and hole recombination velocities extracted from measured saturation current density of tunnel oxide passivating contact region and analysis. Using this approach and two-dimensional device modeling gave an excellent match between the measured and simulated cell parameters and efficiency, supporting excellent passivation and carrier selectivity of these contacts. Extended simulations showed that 26% cell efficiency can be achieved with this cell structure by further optimization of wafer quality, emitter profile, and contact design

14 SOLAR ENERGY↗

Micromachined Piezoresistive-sensed Diaphragms for Infrasonic Monitoring

Micromachined, piezoresistive-sensed diaphragms are designed and fabricated specifically for infrasound sensing applications. Relatively large diaphragms, up to 6 mm × 6 mm, are fabricated to meet the high sensitivity requirements of infrasonic monitoring. A double-stack SOI wafer process is used, resulting in a streamlined two-mask process without the need for doping or ion-implantation. Pressure-sensitivities of diaphragms are studied using a custom static calibration set-up. Here, the piezoresistance of longitudinal and transverse resistors are studied over a large pressure range of ±5,500 Pa so that the linear and nonlinear response regions of diaphragms are observed. Measurements are compared against a nonlinear finite element simulation—shown to accurately predict the sensor’s behavior over a large response range.

47 OTHER INSTRUMENTATION↗

Trap-Assisted Dopant Compensation Prevents Shunting in poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

Interdigitated back contact (IBC) solar cells achieve the highest efficiencies of single-junction architectures, but complicated patterning of the rear fingers and spreading of dopants during processing inhibit their mainstream adoption due to concerns of shunting between the IBC fingers. One method of simplifying patterning at the rear is by using contact masks combined with plasma-enhanced chemical vapor deposition (PECVD) or ion implantation. However, the intrinsic isolation region becomes contaminated during high-temperature annealing by lateral diffusion of dopants and during masked PECVD by spreading of dopant radicals through region between the mask and the substrate. Despite this contamination, we show through scanning spreading resistance microscopy and Kelvin probe force microscopy that a ~20 µm wide compensating region exists with high enough resistivity to prevent shunting. We model this p-i-n poly-Si system using two simulation models: a simple resistor model considering only the capture of charge carriers by trap defects in poly-Si to reduce the conductivity, and a more refined 1-dimensional finite element model using Poisson’s equation, drift-diffusion equations, and recombination of carriers. Using this model, we show that high defect density significantly decreases the current across the region between the p- and n-type fingers, preventing shunting.

atom probe↗