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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 883 records · Page 49
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Virtual substrates for epitaxial growth and methods of making the same

A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Photovoltaic cell with nano-patterned substrate

A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

14 SOLAR ENERGY↗
DOE OSTI2021

Ordered nanotubes on a two-dimensional substrate consisting of different material properties

A nanoscale conductor/semiconductor/insulator device includes a substrate with a lattice and a plurality of nanotubes in crystallographic alignment with the lattice at an interface between the plurality of nanotubes and the substrate. Another such device includes a substrate, meandering tracks in the substrate and a plurality of nanotubes adhering to cut-atomic-step edges of the meandering tracks. Methods of making the nanoscale conductor/semiconductor/insulator devices are also disclosed.

Nasseri, Mohsen↗
DOE OSTI2021

Methods for electropolishing and coating aluminum on air and/or moisture sensitive substrates

Methods for electropolishing and coating aluminum on a surface of an air and/or moisture sensitive substrate, including: in a vessel, submerging the substrate in a first molten salt bath and applying an anodizing current to the substrate at a first temperature to electropolish the surface of the substrate; wherein the first molten salt bath includes one of a first organic salt bath and first inorganic salt bath; wherein, when used, the first organic salt bath includes one of (a) aluminum halide and ionic liquid, (b) a combination of an aluminum halide and halogenatedmethylphenylsulfone (C 6 (H 5−y ,X y )SO 2 CX 3 , where y is a number from 0-5), (c) a combination of an aluminum halide, an ionic liquid, and halogenatedmethylphenylsulfone (C 6 (H 5−y ,X y )SO 2 CX 3 ), and (d) AlF 3 -organofluoride-hydrofluoric acid adduct; wherein, when used, the first inorganic salt bath includes aluminum halide and alkali metal halide; and wherein the anodizing current is 10-30 mA/cm 2 .

Freiderich, John W.↗
DOE OSTI2022

System for roll-to-roll electrocoating of battery electrode coatings onto a foil substrate

The present invention is directed toward a coating system for electrodepositing a battery electrode coating onto a foil substrate, the system comprising a tank structured and arranged to hold an electrodepositable coating composition; a feed roller positioned outside of the tank structured and arranged to feed the foil into the tank; at least one counter electrode positioned inside the tank, the counter electrode in electrical communication with the foil during operation of the system to thereby deposit the battery electrode coating onto the foil; and an in-line foil drier positioned outside the tank structured and arranged to receive the coated foil from the tank. Also disclosed are methods for electrocoating battery electrode coatings onto conductive foil substrates, coated foil substrates, and electrical storage devices comprising the coated foil substrates.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V Devices

In this work, we apply the morphology control of hydride vapor phase epitaxial (HVPE) growth to planarize faceted, non-planar substrates. Controlled spalling is a promising high-throughput substrate reuse technology that could reduce substrate costs for III-V devices; however, the spalling fracture for (100)-oriented GaAs substrates produces a regularly corrugated surface of facets that are 5-20 um in height. We discuss how to planarize these surfaces using only a few minutes of HVPE growth and how to minimize the impact on throughput when integrating faceted wafers into a potential manufacturing process at scale.

epitaxy↗
DOE OSTI2022

Methods for electropolishing and coating aluminum on air and/or moisture sensitive substrates

Methods for electropolishing and coating aluminum on a surface of an air and/or moisture sensitive substrate, including: in a vessel, submerging the substrate in a first molten salt bath and applying an anodizing current to the substrate at a first temperature to electropolish the surface of the substrate; wherein the first molten salt bath includes one of a first organic salt bath and first inorganic salt bath; wherein, when used, the first organic salt bath includes one of (a) aluminum halide and ionic liquid, (b) a combination of an aluminum halide and halogenatedmethylphenylsulfone (C 6 (H 5-y ,X y )SO 2 CX 3 , where y is a number from 0-5), (c) a combination of an aluminum halide, an ionic liquid, and halogenatedmethylphenylsulfone (C 6 (H 5-y ,X y )SO 2 CX 3 ), and (d) AlF 3 -organofluoride-hydrofluoric acid adduct; wherein, when used, the first inorganic salt bath includes aluminum halide and alkali metal halide; and wherein the anodizing current is 10-30 mA/cm 2 .

Freiderich, John W.↗
DOE OSTI2012

Nb Films: Substrates, Nucleation & Crystal Growth

Over the years, Nb/Cu technology, despite its shortcomings due to the commonly used magnetron sputtering, has positioned itself as an alternative route for the future of superconducting structures used in accelerators. Recently, significant progress has been made in the development of energetic vacuum deposition techniques, showing promise for the production of thin films tailored for SRF applications. The purpose of using energetic condensation is to improve film structure on low temperature substrates by adding energy to the film during condensation to compensate for the lack of thermally induced growth processes. Energetic condensation is characterized by a number of surface and subsurface processes enabled by the energy of the incoming ions such as desorption of adsorbed molecules, enhanced mobility of surface atoms, and implantation of impinging ions under the surface. All these with the nature of the substrate and its crystallographic mismatch with Nb have an important influence on the nucleation and subsequent growth of the Nb film. This paper will show how the structure and defect density thus electron mean free path (represented by residual resistance ration values) of Nb films can be tailored on various substrates, crystalline and amorphous, by varying the ion energy and thermal energy provided to the substrate.

Valente, Anne-Marie↗
DOE OSTI2023

Apparatus and method for producing a crystalline film on a substrate surface

An apparatus and method is provided for coating a surface of a material with a film of porous coordination polymer. A first substrate having a first surface to be coated is positioned in a processing chamber such that the first surface is placed in a substantially opposing relationship to a second surface. In some embodiments, the second surface is provided by a wall of the processing chamber, and in other embodiments the second surface is provided by a second substrate to be coated. The first substrate is held such that a gap exists between the first and second surfaces, and the gap is filled with at least one reaction mixture comprising reagents sufficient to form the crystalline film on at least the first surface. A thin gap (e.g., having a thickness less than 2 mm) between the first and second surfaces is effective for producing a high quality film having a thickness less than 100 μm. Confining the volume of the reaction mixture to a thin layer adjacent the substrate surface significantly reduces problems with sedimentation and concentration control. In some embodiments, the size, shape, or average thickness of the gap is adjusted during formation of the film in response to feedback from at least one film growth monitor.

Britt, David K.↗
DOE OSTI2024

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point. AlxGa1-xN ranks high among candidate materials, having bipolar dopability, thermal and chemical stability and an ultra-wide bandgap. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees C. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers. (1) R. J. in a face-to-face configuration, as illustrated in the schematic at left. Kaplar et al 2017, ECS J. Solid State Sci. Technol. 6 Q3061; (2) D. M. Roberts et al 2022, https://arxiv.org/abs/2208.11769; (3) T. Aizawa et al 2008, J Crys Growth 310, 1 22; (4) R. Liu et al 2002, Appl. Phys. Lett. 81, 3182-3184.

ENGINEERING↗
DOE OSTI2020

Mechanistic Studies on the Insertion of Carbonyl Substrates into Cu-H: Different Rate-Limiting Steps as a Function of Electrophilicity

In this paper, we report mechanistic studies on the insertion reactions of [(NHC)Cu(H)] 2 complexes with carbonyl substrates by UV-vis and 1 H NMR spectroscopic kinetic studies, H/D isotopic labelling, and X-ray crystallography. The results of these comprehensive studies show that the insertion of Cu-H with an aldehyde, ketone, activated ester/amide, and unactivated amide consist of two different rate limiting steps: the formation of Cu-H monomer from Cu-H dimer for more electrophilic substrates and hydride transfer from a transient Cu-H monomer for less electrophilic substrates. We also report spectroscopic and crystallographic characterization of rare Cu-hemiacetalate and Cu-hemiaminalate moieties from the insertion of an ester and amide into the Cu-H bond.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates

Carbon (C) is a common impurity that acts as a compensator within GaN grown via metal–organic chemical vapor deposition (MOCVD). Reducing C in GaN will help reduce the compensation level and provide a route to achieve GaN with reliably low effective doping for high-power device applications. GaN grown with fast growth rates on bulk GaN with various offcut angles via conventional-MOCVD (C-MOCVD) and laser-assisted MOCVD (LA-MOCVD) is compared and analyzed. C-incorporation effects are compared through quantitative secondary-ion mass spectroscopy analysis in GaN grown on GaN substrate with offcut angles of 4° and 0.3° toward m-plane over a wide range of growth rates by C-MOCVD and LA-MOCVD. For both growth techniques investigated, a significant reduction in C-incorporation is observed when a high-offcut-angle (4°) substrate is used as compared to a lower-offcut-angle (0.3°) substrate. Furthermore, with C-MOCVD, at the fastest growth condition investigated (17.26 μm h −1 at 0.3°-offcut, 15.25 μm h −1 at 4°-offcut), a reduction in [C] by 21.2X is observed with an increase in the offcut angle from 0.3° to 4°. A 82.6X reduction in [C] is observed with the similar fast growth condition via LA-MOCVD on GaN with 4° offcut angle (9.78 μm h −1 ) as compared to C-MOCVD at 0.3° offcut angle (17.26 μm h −1 ).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Underlying Substrate Effect on Electrochemical Activity for Hydrogen Evolution Reaction with Low‐Platinum‐Loaded Catalysts

Platinum is known as the best catalyst for the hydrogen evolution reaction (HER) but the scarcity and high cost of Pt limit its widespread applicability. Herein, the role of the underlying substrate on the HER activity of dispersed Pt atoms is uncovered. A direct current magnetron sputtering technique is utilized to deposit transition metal (TM) thin films of W, Ti, and Ta as underlying substrates for extremely low loading of Pt (<1.5 at%). The electrocatalytic performance of as‐synthesized samples for the HER is examined in both alkali and acidic media. The results show that despite the low loading of Pt, the Pt/TM catalysts produce hydrogen at a rate comparable to that of pristine bulk Pt. Pt/TM catalysts also display good stability with less than 5% decay in performance after 10 h of continuous HER operation. Based on the computational study, the excellent performance is attributed to the modified electronic properties of the Pt atoms, offering ideal binding energy for HER due to interaction with the underlying substrates. This work provides a robust and industry‐friendly route toward designing efficient catalytic systems for important electrochemical reactions such as HER and others.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

High-Voltage Superconducting Fault Current Limiters Based on High-Diffusivity Dielectric Substrates

High-temperature superconducting (HTS) tapes currently used for the manufacture of resistive fault current limiters use metallic substrates upon which the HTS film is grown. Because the alloys used for these substrates, such as Hastelloy, have a rather high resistivity and low thermal conductivity, the HTS film must be protected by a more conducting metallic layer acting as a shunt to avoid burn out during a fault. This shunt layer limits severely the electric field generated during the fault to values smaller than 100 V/m. A long length of tape is then necessary to achieve the desired high voltage. We show here that by using a high thermal diffusivity dielectric substrate such as sapphire, it is possible to obtain much higher electric fields of up to several kilovolts per meter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Special Features of the Structure of Titanium Nitride Coatings in Substrate Surface Cuts

Elemental compositions and structure-phase states of titanium nitride coatings on the flat surface and in a cut of substrate from 10Cr18Ni10Ti steel are investigated by the methods of x-ray microspectral analysis, Auger electron spectroscopy, and dark-field electron microscopy analysis of the bending-torsion of the crystal lattice. It is established that the coating in the cut, unlike the coating on the frontal surface, has a modified elemental composition and a two-layer structure whose special features and thicknesses change with distance from the sample surface. It is shown that these changes are caused by phase transformations, decreased number of defects, dispersion of layer structures, and increased concentration of impurities with increasing distance from the substrate surface. Based on the results obtained, possible conditions for coating structure formation in the cut of the substrate surface are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Wetting Behavior of Calcium Ferrite Slags on Cristobalite Substrates

Calcium ferrite (CF) is a significant intermediate adhesive phase in high-basicity sinters. The wettability between calcium ferrite (CF) and gangue plays an important role in the assimilation process. The wettability of CF-based slags, in which a constant amount (2 mass pct.) of Al{sub 2}O{sub 3}, MgO, SiO{sub 2}, and TiO{sub 2} was added, on solid SiO{sub 2} (cristobalite) substrates at 1523 K (1250 °C) was investigated. The interfacial microstructure and spreading mechanisms were discussed for each sample. All the tested slag samples exhibited good wettability on the SiO{sub 2} substrate. The initial apparent contact angles were in the range of 20 to 50 deg, while the final apparent contact angles were ~ 5 deg. The wetting process could be divided into three stages on the basis of the change in diameter, namely the “linear spreading” stage, “spreading rate reduction” stage, and “wetting equilibrium” stage. It was found that the CF-SiO{sub 2} wetting system exhibits dissolutive wetting and the dissolution of SiO{sub 2} into slag influences its spreading process. The spreading rate increases with a decrease in the ratio of viscosity to interfacial tension, which is a result of the addition of Al{sub 2}O{sub 3}, MgO, SiO{sub 2}, and TiO{sub 2}. After cooling, a deep corrosion pit was formed in the substrate and a diffusion layer was generated in front of the residual slag zone; further, some SiO{sub 2} and Fe{sub 2}O{sub 3} solid solutions precipitated in the slag.

36 MATERIALS SCIENCE↗
DOE OSTI2018

On Development and Wear Behavior of Microwave-Processed Functionally Graded Ni-SiC Clads on SS-304 Substrate

In this study, the functionally graded Ni-SiC claddings with gradual change in SiC contents were deposited on SS-304 substrate using microwave hybrid heating technique. Experimental trials were carried out inside a multimode domestic microwave device at 2.45 GHz and 900 W. The optimal exposure time of 900 W microwave power was varied with compositional gradient, and it was from 300 to 360 s. The developed functionally graded clad (FGC) was characterized by SEM/EDS, XRD and Vicker’s micro-hardness. Microstructural analysis results revealed that the FGC of approximately 2 mm thickness was developed and was free from any type of interfacial cracks and visible porosity. The maximum micro-hardness was at the top FGC layer, and its value was 1025 ± 30 HV. Three types of single-layer claddings were also developed to compare the tribological behavior of FGC. FGC exhibited 32 and 1.2 times more wear resistance than SS-304 substrate and Ni + 30% SiC layer, respectively. In the case of FGC, wear mainly occurs due to debonding of carbide particles from the matrix, while plastic deformation and strong abrasion are responsible for material loss in the case of the SS-304 substrate.

36 MATERIALS SCIENCE↗