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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 883 records · Page 49

Evolution of the radiation processing industry

Early investigations of the effects of treating materials with ionizing radiations began in 1894 with the irradiation of gases at atmospheric pressure using cathode rays from a Crookes gas-discharge tube, in 1895 with the discovery of X-rays emitted from a Crookes tube, and in 1896 with the discovery of radioactivity in uranium. In 1897, small electrically charged particles were detected and identified in the gas discharges inside Crookes tubes. These particles were then named electrons. During the next three decades, it was found that these novel forms of energy could produce ions to initiate chemical reactions in some gases and liquids. By 1921, it had also been shown that insects, parasites and bacteria could be killed by treatment with ionizing radiation. In 1925, a high-vacuum tube with a thermionic cathode and a thin metallic anode was developed to produce electron beams in air by using accelerating potentials up to 250 kilovolts. That unique apparatus was the precursor of the many types of electron accelerators that have been developed since then for a variety of industrial applications. In 1929, the vulcanization of natural rubber without using any chemical additives was achieved by irradiation with electrons from a 250 kilovolt accelerator. In 1939, several liquid monomers were polymerized by treatment with gamma rays from radioactive nuclides. These early results were not exploited before the end of World War II because intense sources of ionizing radiation were not available then. Shortly after that war, there was increased interest in developing the peaceful uses of atomic energy, which included the chemical and biological effects of radiation exposures. Many uses that have been developed since then are described briefly in this paper. These industrial applications are now producing billions of US dollars in revenue every year.

36 MATERIALS SCIENCE↗

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

This letter reports on the temperature behavior of the structural and electrical properties of Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 °C showed a decreasing temperature behavior of the specific contact resistance ρ{sub C}, which was explained by a thermionic field emission mechanism, an increasing trend is observed in the contacts formed at 850 °C. In this case, ρ{sub C} exhibits a “metal-like” behavior, i.e., describable by a T{sup 1.8} dependence. The microstructural analysis of the interfacial region allowed to explain the results with the formation of metallic intrusions contacting directly the two dimensional electron gas.

36 MATERIALS SCIENCE↗

Micro-cooler enhancements by barrier interface analysis

A novel gallium arsenide (GaAs) based micro-cooler design, previously analysed both experimentally and by an analytical Heat Transfer (HT) model, has been simulated using a self-consistent Ensemble Monte Carlo (EMC) model for a more in depth analysis of the thermionic cooling in the device. The best fit to the experimental data was found and was used in conjunction with the HT model to estimate the cooler-contact resistance. The cooling results from EMC indicated that the cooling power of the device is highly dependent on the charge distribution across the leading interface. Alteration of this charge distribution via interface extensions on the nanometre scale has shown to produce significant changes in cooler performance.

36 MATERIALS SCIENCE↗

Innovative measurement of Debye shielding in plasmas by Lyman-α radiation of a probing metastable hydrogen beam

Answering to a long-standing challenge, a new way to non-intrusively measure weak electric fields in plasmas is presented. Here we show it using an H(2s) atomic probe beam, obtained from the conversion of H{sup +} ions into H(2s) either by collisions with H{sub 2} residual gas or in a resonant charge exchange cesium cell. The probe beam is sent between two polarized plates creating an electric field applied within a thermionic plasma. Indeed the interaction between a metastable H(2s) atomic hydrogen beam and an external electric field leads to the emission of the Lyman-alpha line owing to the Stark mixing of the 2s{sub 1/2} and 2p{sub 1/2} levels. When the field is weak, it can be treated as a perturbation of these two states separated by a small amount of energy called Lamb-shift. It induces a radiation with intensity proportional to the square modulus of the electric field which is measured in a direction perpendicular to the probe beam. Contrary to measurements in vacuum, the Debye sheath formation is clearly observed in the presence of plasma. This contribution reviews: presentation of Stark mixing of the 2s{sub 1/2} and 2p{sub 1/2} levels and of Lamb shift for hydrogen-like atoms, brief description of the experimental set-up, observation of the formation of a sheath between two polarized plane electrodes in a plasma, either with a probe ion beam, or atom beam.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

36 MATERIALS SCIENCE↗

On vapor shielding of dust grains of iron, molybdenum, and tungsten in fusion plasmas

The shielding effects of ablation cloud around a small dust grain composed of iron, molybdenum, or tungsten in fusion plasmas are considered. These include collisional dissipation of momentum flux of impinging plasma ions, heat transfer by secondary plasma created due to electron impact ionization of the ablated atoms, and radiative plasma power losses in the ablation cloud. The maximum radius, which limits applicability of existing dust-plasma interaction models neglecting the cloud shielding effects, for dust grains of the considered high-Z metals is calculated as function of plasma parameters. The thermal bifurcation triggered by thermionic electron emission from dust grains, observed for some of the considered materials, is analyzed. The results are compared with previous calculations for dust composed of low-Z fusion related materials, i.e., lithium, beryllium, and carbon.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

An ion guide laser ion source for isobar-suppressed rare isotope beams

Modern experiments at isotope separator on-line (ISOL) facilities like ISAC at TRIUMF often depend critically on the purity of the delivered rare isotope beams. Therefore, highly selective ion sources are essential. This article presents the development and successful on-line operation of an ion guide laser ion source (IG-LIS) for the production of ion beams free of isobaric contamination. Thermionic ions from the hot ISOL target are suppressed by an electrostatic potential barrier, while neutral radio nuclides effusing out are resonantly ionized by laser radiation within a quadrupole ion guide behind this barrier. The IG-LIS was developed through detailed thermal and ion optics simulation studies and off-line tests with stable isotopes. In a first on-line run with a SiC target a suppression of surface-ionized Na contaminants in the ion beam of up to six orders of magnitude was demonstrated.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Effects of sub-bandgap illumination on electrical properties and detector performances of CdZnTe:In

The effects of sub-bandgap illumination on electrical properties of CdZnTe:In crystals and spectroscopic performances of the fabricated detectors were discussed. The excitation process of charge carriers through thermal and optical transitions at the deep trap could be described by the modified Shockley-Read-Hall model. The ionization probability of the deep donor shows an increase under illumination, which should be responsible for the variation of electrical properties within CdZnTe bulk materials with infrared (IR) irradiation. By applying Ohm's law, diffusion model and interfacial layer-thermionic-diffusion theory, we obtain the decrease of bulk resistivity and the increase of space charge density in the illuminated crystals. Moreover, the illumination induced ionization will further contribute to improving carrier transport property and charge collection efficiency. Consequently, the application of IR irradiation in the standard working environment is of great significance to improve the spectroscopic characteristics of CdZnTe radiation detectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions

A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The transistor shows excellent saturation of output I-V characteristics due to drain-induced depletion and lack of tunneling barrier layers. The subthreshold slope could be below the thermionic limit due to band filtering as the switching mechanism. The atomically thin vertical PN heterojunction can be electrostatically modulated from a type II heterojunction to a broken bandgap alignment, which is preferred for maximizing the on-current.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electron-hole recombination on ZnO(0001) single-crystal surface studied by time-resolved soft X-ray photoelectron spectroscopy

Time-resolved soft X-ray photoelectron spectroscopy (PES) experiments were performed with time scales from picoseconds to nanoseconds to trace relaxation of surface photovoltage on the ZnO(0001) single crystal surface in real time. The band diagram of the surface has been obtained numerically using PES data, showing a depletion layer which extends to 1 μm. Temporal evolution of the photovoltage effect is well explained by a recombination process of a thermionic model, giving the photoexcited carrier lifetime of about 1 ps at the surface under the flat band condition. This lifetime agrees with a temporal range reported by the previous time-resolved optical experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Numerical model of the plasma formation at electron beam welding

The model of plasma formation in the keyhole in liquid metal as well as above the electron beam welding zone is described. The model is based on solution of two equations for the density of electrons and the mean electron energy. The mass transfer of heavy plasma particles (neutral atoms, excited atoms, and ions) is taken into account in the analysis by the diffusion equation for a multicomponent mixture. The electrostatic field is calculated using the Poisson equation. Thermionic electron emission is calculated for the keyhole wall. The ionization intensity of the vapors due to beam electrons and high-energy secondary and backscattered electrons is calibrated using the plasma parameters when there is no polarized collector electrode above the welding zone. The calculated data are in good agreement with experimental data. Results for the plasma parameters for excitation of a non-independent discharge are given. It is shown that there is a need to take into account the effect of a strong electric field near the keyhole walls on electron emission (the Schottky effect) in the calculation of the current for a non-independent discharge (hot cathode gas discharge). The calculated electron drift velocities are much bigger than the velocity at which current instabilities arise. This confirms the hypothesis for ion-acoustic instabilities, observed experimentally in previous research.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

Low resistivity Ni/Ti/Al ohmic contacts on p-type 4H-SiC epilayer were developed, and their thermal stabilities were also experimentally investigated through high temperature storage at 600 °C for 100 h. The contact resistance of the Al/Ti/Ni/SiC contacts degraded in different degrees, and the contact morphology deteriorated with the increases of the average surface roughness and interface voids. X-ray spectra showed that Ni{sub 2}Si and Ti{sub 3}SiC{sub 2}, which were formed during ohmic contact annealing and contributed to low contact resistivity, were stable under high temperature storage. The existence of the TiAl{sub 3} and NiAl{sub 3} intermetallic phases was helpful to prevent Al agglomeration on the interface and make the contacts thermally stable. Auger electron spectroscopy indicated that the incorporation of oxygen at the surface and interface led to the oxidation of Al or Ti resulting in increased contact resistance. Also, the formation of these oxides roughened the surface and interface. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism dominates the current transport for contacts before and after the thermal treatment. It suggests that the Ni/Ti/Al composite ohmic contacts are promising for SiC devices to be used in high temperature applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Gate-modulated conductance of few-layer WSe{sub 2} field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe{sub 2} field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10{sup 13}/cm{sup 2}/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Charge-carrier dynamics in polycrystalline thin-film CuIn{sub 1−x}Ga{sub x}Se{sub 2} photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn{sub 1−x}Ga{sub x}Se{sub 2} (with x ≈ 0.3) as 22 ± 2 cm{sup 2}(Vs){sup −1}. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Application of the general thermal field model to simulate the behaviour of nanoscale Cu field emitters

Strong field electron emission from a nanoscale tip can cause a temperature rise at the tip apex due to Joule heating. This becomes particularly important when the current value grows rapidly, as in the pre-breakdown (the electrostatic discharge) condition, which may occur near metal surfaces operating under high electric fields. The high temperatures introduce uncertainties in calculations of the current values when using the Fowler–Nordheim equation, since the thermionic component in such conditions cannot be neglected. In this paper, we analyze the field electron emission currents as the function of the applied electric field, given by both the conventional Fowler–Nordheim field emission and the recently developed generalized thermal field emission formalisms. We also compare the results in two limits: discrete (atomistic simulations) and continuum (finite element calculations). The discrepancies of both implementations and their effect on final results are discussed. In both approaches, the electric field, electron emission currents, and Joule heating processes are simulated concurrently and self-consistently. We show that the conventional Fowler–Nordheim equation results in significant underestimation of electron emission currents. We also show that Fowler–Nordheim plots used to estimate the field enhancement factor may lead to significant overestimation of this parameter especially in the range of relatively low electric fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

An X-band high-impedance relativistic klystron amplifier with an annular explosive cathode

The feasibility of employing an annular beam instead of a solid one in the X-band high-impedance relativistic klystron amplifier (RKA) is investigated in theory and simulation. Small-signal theory analysis indicates that the optimum bunching distance, fundamental current modulation depth, beam-coupling coefficient, and beam-loaded quality factor of annular beams are all larger than the corresponding parameters of solid beams at the same beam voltage and current. An annular beam RKA and a solid beam RKA with almost the same geometric parameters are compared in particle-in-cell simulation. Output microwave power of 100 MW, gain of 50 dB, and power conversion efficiency of 42% are obtained in an annular beam RKA. The annular beam needs a 15% lower uniform guiding magnetic field than the solid beam. Our investigations demonstrate that we are able to use a simple annular explosive cathode immersed in a lower uniform magnetic field instead of a solid thermionic cathode in a complicated partially shielding magnetic field for designing high-impedance RKA, which avoids high temperature requirement, complicated electron-optical system, large area convergence, high current density, and emission uniformity for the solid beam. An equivalent method for the annular beam and the solid beam on bunching features is proposed and agrees with the simulation. The annular beam has the primary advantages over the solid beam that it can employ the immersing uniform magnetic field avoiding the complicated shielding magnetic field system and needs a lower optimum guiding field due to the smaller space charge effect.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Experimental observation of sub-terahertz backward-wave amplification in a multi-level microfabricated slow-wave circuit

In our earlier paper dealing with dispersion retrieval from ultra-deep, reactive-ion-etched, slow-wave circuits on silicon substrates, it was proposed that splitting high-aspect-ratio circuits into multilevels enabled precise characterization in sub-terahertz frequency regime. This achievement prompted us to investigate beam-wave interaction through a vacuum-sealed integration with a 15-kV, 85-mA, thermionic, electron gun. Our experimental study demonstrates sub-terahertz, backward-wave amplification driven by an external oscillator. The measured output shows a frequency downshift, as well as power amplification, from beam loading even with low beam perveance. This offers a promising opportunity for the development of terahertz radiation sources, based on silicon technologies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗