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At least 883 records · Page 49

Backhopping effect in magnetic tunnel junctions: Comparison between theory and experiment

We report on magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on current-induced switching in junctions with a MgO tunnel barrier reveal random back-and-forth switching between magnetization states, which appears when the current direction favors the parallel magnetic configuration. The effect depends on the barrier thickness t{sub b} and is not observed in tunnel junctions with very thin MgO tunnel barriers, t{sub b} < 0.95 nm. The switching dependence on bias voltage and barrier thickness is explained in terms of the macrospin model, with the magnetization dynamics described by the modified Landau-Lifshitz-Gilbert equation. Numerical simulations indicate that the competition between in-plane and out-of-plane torque components can result in a non-deterministic switching behavior at high bias voltages, in agreement with experimental observations. When the barrier thickness is reduced, the overall coupling between the magnetic layers across the barrier becomes ferromagnetic, which suppresses the backhopping effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetohydrodynamic study for three-dimensional instability of the Petschek type magnetic reconnection

The 3D instability of the spontaneous fast magnetic reconnection process is studied with magnetohydrodynamics (MHD) simulations, where the 2D model of the spontaneous fast magnetic reconnection is destabilized in three dimension. As well known in many 2D numerical MHD studies, when a 1D current sheet is destabilized with the current-driven anomalous resistivity, the 2D Petschek type fast magnetic reconnection is established. This paper shows that the 2D Petschek type fast magnetic reconnection can be destabilized in three dimension by an initial resistive disturbance which includes a weak fluctuation in the sheet current direction, i.e., along the magnetic neutral line. The resulting 3D fast magnetic reconnection finally becomes intermittent and random through a 3D instability. In addition, it is also shown that the 3D instability is suppressed by the uniform resistivity. It suggests that the 3D instability is caused in the Petschek-type reconnection process which is characterized by a strongly localized magnetic diffusion region and the slow shock acceleration of the plasma jets and is suppressed in the Sweet-Parker type reconnection process.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Optical detection of spin Hall effect in metals

Optical techniques have been widely used to probe the spin Hall effect in semiconductors. In metals, however, only electrical methods such as nonlocal spin valve transport, ferromagnetic resonance, or spin torque transfer experiments have been successful. These methods require complex processing techniques and measuring setups. We show here that the spin Hall effect can be observed in non-magnetic metals such as Pt and β-W, using a standard bench top magneto-optical Kerr system with very little sample preparation. Applying a square wave current and using Fourier analysis significantly improve our detection level. One can readily determine the angular dependence of the induced polarization on the bias current direction (very difficult to do with voltage detection), the orientation of the spin Hall induced polarization, and the sign of the spin Hall angle. This optical approach is free from the complications of various resistive effects, which can compromise voltage measurements. This opens up the study of spin Hall effect in metals to a variety of spin dynamic and spatial imaging experiments.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Role of recombination, dissociation, and competition between exciton-charge reactions in magnetoconductance of polymeric semiconductor device

Magnetoelectrical measurements were performed on a diode structure, based on an anthracene-containing poly(arylene-ethynylylene)-alt-poly(arylene-vinylene) denoted AnE-PVstat, to clarify the role of the recombination and dissociation of electron-hole (e-h) pairs in the magnetoconductance (MC). We report the observed MC under a weak magnetic field (<1 T) at room and low temperatures. Positive MC is observed and reaches up to 2% at a magnetic field of 450 mT at room temperature. It is found that with the increase of the voltage, the MC effect decreases. We also report the difference in MC between perpendicular (θ = 90°) and parallel (θ = 0°) alignment of magnetic field with respect to the current direction. The experimental data were analyzed in the context of the e-h pair model, based on the Stochastic Liouville Equation. To interpret the experimental results on magnetoconductance measurements, anisotropic hyperfine interaction has been introduced through an anisotropic hyperfine field. The dissociation rates q{sub S} and q{sub T} of the singlet and triplet e-h pairs were determined from the best fit with experimental curves and are about 10{sup 5 }s{sup −1}, while the recombination rates of the singlet and triplet e-h pairs are k{sub S} ∼ 10{sup 9 }s{sup −1} and k{sub T} ∼ 10{sup 5 }s{sup −1}, respectively. At low temperatures (T < 60 K), an unexpected “sign-reversal phenomenon” of the magnetoconductance is observed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Fermi surface distortion induced by interaction between Rashba and Zeeman effects

To evaluate Fermi surface distortion induced by interaction between Rashba and Zeeman effects, the channel resistance in an InAs quantum well layer is investigated with an in-plane magnetic field transverse to the current direction. In the magnetoresistance curve, the critical point occurs at ∼3.5 T, which is approximately half of the independently measured Rashba field. To get an insight into the correlation between the critical point in magnetoresistance curve and the Rashba strength, the channel conductivity is calculated using a two-dimensional free-electron model with relaxation time approximation. The critical point obtained from the model calculation is in agreement with the experiment, suggesting that the observation of critical point can be an alternative method to experimentally determine the Rashba parameter.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Field emission spectroscopy evidence for dual-barrier electron tunnelling in nanographite

Nanocarbon films with upstanding flake-like graphite crystallites of nanometre thickness were fabricated by carbon condensation from a methane–hydrogen gas mixture activated by a direct-current discharge. The nanographite (NG) crystallites are composed of a few graphene layers. The adjacent atomic layers are connected partially at the edges of the crystallites to form strongly curved graphene structures. The extraordinary field emission (FE) properties were revealed for the NG films with an average current density of a few mA/cm{sup 2}, reproducibly obtained at a macroscopic applied field of about 1 V/μm. The integral FE current–voltage curves and electron spectra (FEES) of NG cathodes with multiple emitters were measured in a triode configuration. Most remarkably, above a threshold field, two peaks were revealed in FEES with different field-dependent shifts to lower energies. This behaviour evidences electron emission through a dual potential barrier, corresponding to carbon–carbon heterostructure formed as a result of the graphene bending.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

An adaptable multiple power source for mass spectrometry and other scientific instruments

Power supplies are commonly used in the operation of many types of scientific equipment, including mass spectrometers and ancillary instrumentation. A generic modern mass spectrometer comprises an ionization source, such as electrospray ionization (ESI), ion transfer devices such as ion funnels and multipole ion guides, and ion signal detection apparatus. Very often such platforms include, or are interfaced with ancillary elements in order to manipulate samples before or after ionization. In order to operate such scientific instruments, numerous direct current (DC) channels and radio frequency (RF) signals are required, along with other controls such as temperature regulation. In particular, DC voltages in the range of ±400 V, along with MHz range RF signals with peak-to-peak amplitudes in the hundreds of volts range are commonly used to transfer ionized samples under vacuum. Additionally, an ESI source requires a high voltage (HV) DC source capable of producing several thousand volts and heaters capable of generating temperatures up to 300°C. All of these signals must be properly synchronized and managed in order to carry out ion trapping, accumulation and detection.

47 OTHER INSTRUMENTATION↗

Gate tuneable beamsplitter in ballistic graphene

We present a beam splitter in a suspended, ballistic, multiterminal, bilayer graphene device. By using local bottomgates, a p-n interface tilted with respect to the current direction can be formed. We show that the p-n interface acts as a semi-transparent mirror in the bipolar regime and that the reflectance and transmittance of the p-n interface can be tuned by the gate voltages. Moreover, by studying the conductance features appearing in magnetic field, we demonstrate that the position of the p-n interface can be moved by 1 μm. The herein presented beamsplitter device can form the basis of electron-optic interferometers in graphene.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Dual band multi frequency rectangular patch microstrip antenna with flyswatter shaped slot for wireless systems

In this paper a dual band planar antenna has been proposed for IEEE 802.16 Wi-MAX /IEEE 802.11 WLAN/4.9 GHz public safety applications. The antenna comprises a frequency bandwidth of 560MHz (3.37GHz-3.93GHz) for WLAN and WiMAX and 372MHz (4.82GHz-5.192GHz) for 4.9 GHz public safety applications and Radio astronomy services (4.8-4.94 GHz). The proposed antenna constitutes of a single microstrip patch reactively loaded with three identical steps positioned in a zig-zag manner towards the radiating edges of the patch. The coaxially fed patch antenna characteristics (radiation pattern, antenna gain, antenna directivity, current distribution, S{sub 11}) have been investigated. The antenna design is primarily focused on achieving a dual band operation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Evolution and sign control of square-wave-like anisotropic magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3}/LaAlO{sub 3}(001) manganite thin films

We investigated magneto-transport properties of a compressively strained spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) thin film micro-bridge deposited on LaAlO{sub 3}. Angular dependence of the magneto-resistance R(θ) of this bridge, where θ is the angle between the magnetic field and the current directions in the film plane, exhibits sharp positive and negative percolation jumps near T{sub MIT}. The sign and the magnitude of these jumps can be tuned using the magnetic field. Such behavior has not been observed in LPCMO micro-bridges subjected to tensile strain, indicating a correlation between the type of the lattice strain, the distribution of electronic domains, and the anisotropic magneto-resistance in spatially confined manganite systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Strongly localized magnetic reconnection by the super-Alfvénic shear flow

We demonstrate that the dragging of the magnetic field by the super-Alfvénic shear flows out of the reconnection plane can strongly localize the reconnection x-line in collisionless pair plasmas, reversing the current direction at the x-line. Reconnection with this new morphology, which is impossible in resistive-magnetohydrodynamics, is enabled by the particle inertia. Surprisingly, the quasi-steady reconnection rate remains of order 0.1 even though the aspect ratio of the local x-line geometry is larger than unity, which completely excludes the role of tearing physics. Here, we explain this by examining the transport of the reconnected magnetic flux and the opening angle made by the upstream magnetic field, concluding that the reconnection rate is still limited by the constraint imposed at the inflow region. Based on these findings, we propose that this often observed fast rate value of order 0.1 itself, in general, is an upper bound value determined by the upstream constraint, independent of the localization mechanism and dissipation therein.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Note: Plasma optical emission spectroscopy for water vapor quantification and detection during vacuum drying process

In this work, a methodology involving plasma optical emission spectroscopy driven by a direct current (dc) plasma source is developed to quantify water vapor concentration in a gaseous stream. The experimental setup consists of a dc driven low-pressure plasma cell in which the emission from the plasma discharge is measured by using an optical emission spectrometer. The emission from Hα at 656.2 nm—the first transition in the Balmer series, was found to be the most sensitive to the water vapor concentration in the gas stream. Consistent linear trends of the emission signals with respect to variation in concentration of water are observed for multiple combinations of operating parameters. This method has been applied to a vacuum drying process of a mock nuclear fuel assembly to quantify the concentration of water vapor during the drying process.

47 OTHER INSTRUMENTATION↗

Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites

Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced direct current conductance. Our findings are explained based on the established segregation enthalpy profiles for oxygen vacancies and interstitials, providing a microscopic model for previous, seemingly disconnected observations ranging from insulating to conducting behavior. In addition, we observe variations in conductance between different nominally neutral walls that we attribute to deviations from the ideal charge-neutral structure within the bulk, leading to a superposition of extrinsic and intrinsic contributions. Our study clarifies the complex transport properties at nominally neutral domain walls in hexagonal manganites and establishes the possibility to tune their electronic response based on oxidation conditions, opening the door for domain-wall-based sensor technology.

Schultheiß, J. (ORCID:0000000173891295)↗

Sputter-deposited low-stress boron carbide films

Significant challenges have been faced in the manufacturing of low-stress B 4 C films. Here, we demonstrate a set of process parameters for direct-current magnetron sputter deposition of smooth, high-purity, amorphous B 4 C films with near-zero total residual stress and with thicknesses up to 10 μm. Films are characterized by a combination of high-energy ion scattering, x-ray diffraction, electron microscopy, and stress measurements based on substrate curvature. In order to facilitate the process transfer to other sputtering geometries, the favorable deposition conditions are correlated with distributions of landing energies and incident angles of depositing species estimated by Monte Carlo simulations of ballistic collisions and gas phase atomic transport. Based on such simulations, a decrease in compressive stress with increasing Ar working gas pressure is attributed to the corresponding broadening of the angular distribution of depositing species and associated atomic shadowing effects.

36 MATERIALS SCIENCE↗

Comparison of 1D and 2D particle-in-cell simulations for DC magnetron sputtering discharges

One-dimensional and two-dimensional particle-in-cell (PIC)/Monte Carlo collision simulations are performed for a balanced direct current magnetron sputtering (DCMS) discharge. The plasma parameters obtained by both simulations above the target racetrack share similar features and magnitudes under similar discharge intensities, i.e., similar local discharge current densities. The commonly observed high-energy tail of electron energy distribution in DCMS discharges is reproduced in both simulations. Additionally, the accuracy and applicability of using onedimensional simulations to qualitatively investigate the characteristics of balanced DCMS discharge are confirmed. In terms of capturing the key physical mechanisms in DCMS, one-dimensional PIC simulation is an efficient method, which could largely alleviate the computational expense and preserve the physical fidelity of modeling results.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structure and dynamical properties of two-dimensional dusty plasmas on one-dimensional periodic substrates

In the presence of the substrate, various structural and dynamical properties of two-dimensional dusty plasma (2DDP) were investigated using Langevin dynamical simulations. This paper reviews a series of results of the structural and dynamical properties of 2DDP modified by one-dimensional periodic substrates (1DPSs) as follows. First, when the depth of the 1DPS increases gradually, it is found that the static structural order of 2DDP along each potential well of the 1DPS increases first, and then decreases gradually. When the width of the 1DPS increases gradually, the particle arrangement in each potential well of the 1DPS changes from one straight row gradually to two rows, including the stable zigzag structure. Second, when there are two rows in each potential well of the 1DPS, the phonon spectra are split into two branches, corresponding to the breathing and sloshing modes, respectively. In addition, due to the pure repulsion between dust particles, from the obtained phonon spectra, the sloshing wave propagates backward at small wave numbers. Third, the calculated mean-square displacement (MSD) shown that, at the intermediate timescale between the initial ballistic and final diffusive motions, the particle motion tends to be more subdiffusive while the depth of the 1DPS increases. While the width of the 1DPS increases gradually, the long-time diffusive motion first increases, then decreases, and finally increases again, exhibiting the oscillation-like diffusion, due to the stable zigzag structure. Finally, when an external direct-current driving force is applied on all particles of 2DDP, three different depinning phases are discovered, which are the pinned, disordered plastic flow, and moving ordered states, respectively, as the driving force increases from zero. In addition, the continuous/discontinuous property of the phase transition between these different depinning states is investigated, showing that the transition property is modulated by the depth of the applied 1DPS

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Radio frequency mixing modules for superconducting qubit room temperature control systems

As the number of qubits in nascent quantum processing units increases, the connectorized RF (radio frequency) analog circuits used in first generation experiments become exceedingly complex. The physical size, cost, and electrical failure rate all become limiting factors in the extensibility of control systems. We have developed a series of compact RF mixing boards to address this challenge by integrating I/Q quadrature mixing, intermediate frequency/LO (local oscillator)/RF power level adjustments, and direct current bias fine tuning on a 40 × 80 mm 2 four-layer printed circuit board with electromagnetic interference shielding. The RF mixing module is designed to work with RF and LO frequencies between 2.5 and 8.5 GHz. The typical image rejection and adjacent channel isolation are measured to be ~27 dBc and ~50 dB. By scanning the drive phase in a loopback test, the module short-term amplitude and phase linearity are typically measured to be 5 ×10 -4 (V pp /V mean ) and 1 ×10 -3 radian (pk-pk). The operation of the RF mixing board was validated by integrating it into the room temperature control system of a superconducting quantum processor and executing randomized benchmarking characterization of single and two qubit gates. We measured a single-qubit process infidelity of 9.3(3) × 10 -4 and a two-qubit process infidelity of 2.7(1) × 10 -2 .

47 OTHER INSTRUMENTATION↗

Oblique angle deposition of boron carbide films by magnetron sputtering

Many applications of boron carbide (B4C) films entail deposition on non-planar substrates, necessitating a better understanding of oblique angle deposition phenomena. Here, we systematically study the effect of substrate tilt on properties of B 4 C films with thicknesses up to 10 μm deposited by direct current magnetron sputtering. Results show that all films are amorphous and columnar with an average column width of ~100 nm, independent of substrate tilt. Column tilt angles are limited to ~20° even for substrate tilt of 80°. Film density, residual stress, and the refractive index weakly (within ≲20%) depend on substrate tilt. Furthermore, oxygen impurities bond preferentially with carbon atoms in inter-columnar regions. Substrate tilt has a major effect on mechanical properties that decrease by ~50%, suggesting weak interconnection between nano-columns. Implications of these observations for the deposition onto non-planar substrates are discussed.

36 MATERIALS SCIENCE↗