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We provide fundamental design principles on the effect of dopant structure (steric hindrance) on the doping efficiency in highly oriented self-doped organic semiconducting thin films.
Highlights: • A small amount of MnO{sub 2} doping the SBN-glass-ceramics makes BDS reach to 1470.6 kV/cm. • The theoretical energy storage density of the SBN-glass-ceramics with MnO{sub 2} addition gets 9.2 J/cm{sup 3}. • A small amount MnO{sub 2} doping the BSN-glass-ceramics makes the leakage current densities decrease to 10{sup −6} A/cm{sup 2}. • A small amount of MnO{sup 2} doping the SBN-glass-ceramics can effectively decrease the dielectric loss of the materials. - Abstract: The effects of MnO{sub 2} content on the structure and dielectric properties of the SBN-glass-ceramics were studied. The results show that a small amount of MnO{sub 2} doping of the SBN-glass-ceramics can make their microstructure become denser and more uniform and MnO{sub 2} doping of the SBN-glass-ceramics, as a grain growth inhibitor, has an evident effect on the reduction of grain sizes. The Mn ions exist in the form of Mn{sup 3+} and Mn{sup 4+} ions in the SBN-glass-ceramics, as confirmed by XPS measurements and Mn{sup 3+} and Mn{sup 4+} ions easily form charge defect complexes, which causes the leakage current densities of the SBN-glass-ceramics to obviously decrease. And a small amount of MnO{sub 2} doping of the SBN-glass-ceramics can effectively decrease the dielectric loss of the materials. When 0.05 mol% MnO{sub 2} is added to the SBN-glass-ceramics, the BDS is up to 1470.6 kV/cm and the theoretical energy storage density reaches the maximum value of 9.2 J/cm{sup 3}.
Abstract Engineering semiconductor devices requires an understanding of the effective mass of electrons and holes. Effective masses have historically been determined in metals at cryogenic temperatures estimated using measurements of the electronic specific heat. Instead, by combining measurements of the Seebeck and Hall effects, a density of states effective mass can be determined in doped semiconductors at room temperature and above. Here, a simple method to calculate the electron effective mass using the Seebeck coefficient and an estimate of the free electron or hole concentration, such as that determined from the Hall effect, is introduced here is the Seebeck effective mass, n H is the charge carrier concentration measured by the Hall effect ( n H = 1/ eR H , R H is Hall resistance) in 10 20 cm −3 , T is the absolute temperature in K, S is the Seebeck coefficient, and k B / e = 86.3 μV K −1 . This estimate of the effective mass can aid the understanding and engineering of the electronic structure as it is largely independent of scattering and the effects of microstructure (grain boundary resistance). It is particularly helpful in characterizing thermoelectric materials.
In this article, we have synthesized the Gd{sup 3+}-doped Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2−x}Gd{sub x}O{sub 4} (x = 0.05, 0.07, 1.0) ferrite samples using solid-state reaction route. The effects of Gd{sup 3+} doping on structural, vibrational, electrical and magnetic properties were studied. Structural and vibrational properties were characterized by x-ray diffraction (XRD), Raman, and FTIR spectroscopy. XRD data indicate that the Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2−x}Gd{sub x}O{sub 4} ceramics crystallize in single-phase spinel cubic (Fd3m space group) structure. Infrared spectra show two strong absorption bands in the frequency range of 400–600 cm{sup −1} which were, respectively, attributed to tetrahedral and octahedral sites of the spinel ferrite. All the prepared samples show the typical dielectric dispersion having Maxwell–Wagner-type interfacial polarization. Decrease in dielectric constant and loss tangent has been observed with frequency and doping concentration. M − H plots reveal that all the samples exhibit ferrimagnetic nature at room temperature. A significant increase in the saturation magnetization has been observed upon the substitution of Gd{sup 3+} ions. All the as-prepared samples are isotropic and soft magnetic materials. These ferrite compounds are advantageous in advanced high-density data storage and high-frequency devices applications.
The development of new and inexpensive semiconductor electrodes that possess suitable bandgap energies and band positions for solar water splitting is of great interest in the field of solar fuel production. In this study, n-type Cu 11 V 6 O 26 that has a bandgap energy of 1.9 eV was produced as a pure, high quality photoanode and its properties and stability for photoelectrochemical water splitting were systematically investigated in pH 9.2 and pH 13 solutions. As Cu 11 V 6 O 26 photoanodes appeared to suffer from poor charge transport properties, Mo and W-doping into the V site were also examined, which considerably improved the photocurrent generation of Cu 11 V 6 O 26 . Furthermore, the bandgap energy, band edge positions, flatband potential, photocurrent generation, and photostability of pristine and doped Cu 11 V 6 O 26 electrodes are discussed in comparison to elucidate the effect of Mo- and W-doping and to evaluate the promise and limitations of Cu 11 V 6 O 26 as a photoanode for use in a water splitting photoelectrochemical cell.
Transition metal doping in semiconductor quantum dots (QDs) significantly impacts their optical properties, thus expanding the range of their potential optoelectronic applications. This study investigates the pressure-dependent energy transfer dynamics in Mn 2+ -doped CdS/ZnS core/shell QDs, focusing on how external hydrostatic pressure modulates these dynamics and optical properties. By synthesizing Mn 2+ -doped QDs with varying Mn 2+ doping concentrations, we explore the effects of the pressure on photoluminescence (PL) spectra and energy transfer efficiency. Our study reveals that increasing pressure induces a blueshift in the QD host bandgap PL and a redshift in the Mn 2+ dopant PL. The pressure-induced shifts highlight a unique modulation mechanism where the energy transfer efficiency decreases with pressure due to reduced wave function overlap between host excitons and Mn 2+ dopants. Detailed analysis of the PL quantum yields and energy transfer rate constants provides insights into these dynamics, suggesting that the pressure can effectively and reversibly regulate the energy transfer efficiencies and rates. In conclusion, these results have implications for developing pressure-sensitive configurable devices and exploring pressure-induced phenomena in doped nanomaterials.
Herein we study the effect of strain on the catalytic activity of different Pt-doped single wall metallic carbon nanotubes (SWCNT) towards the oxygen reduction reaction (ORR). We consider the possibility of the Pt-doped at single vacancy inside the SWCNT to investigate the effect of confinement on the reaction mechanism. Density functional theory calculations indicate that for the SWCNTs with tube diameters below 7 Å, the strain energy varies significantly influencing the adsorption energies of the key intermediates of the ORR reaction. For the SWCNTs with tube diameters above 7 Å, on the other hand, both the calculated strain and the adsorption energies are almost constant. We furthermore find that the adsorption energies are strongly affected by confinement effects as shown for Pt-doped systems that are located inside the SWCNT. We show that the Pt-doped at single vacancy of the SWCNT strongly binds the oxygenated species under ORR potentials and therefore the active species is covered by oxo- or hydroxo group. Because the presence of Pt atoms doped at the single and double vacancies of the SWCNT is equivalently probable we also studied the Pt-doped at double vacancy. We find that the most active motif is the Pt-doped at double vacancy of SWCNT with 0.24V overpotenital.
Utilizing both cationic and anionic oxygen redox reactions is regarded as an important approach to exploit high-capacity layered cathode materials with earth abundant elements. It has been popular strategies to effectively elevate the oxygen redox activities by Li-doping to introduce unhybridized O 2p orbitals in Na x MnO 2 -based chemistries or enabling high covalency transition metals in P2-Na 0.66 Mn x TM 1-x O 2 (TM = Fe, Cu, Ni) materials. Here, we investigated the effect of Li doping on regulating the oxygen redox activities P2-structured Na 0.66 Ni 0.25 Mn 0.75 O 2 materials. Systematic X-ray characterizations and ab initio simulations have shown that the doped Li has uncommon behavior in modulating the density of states of the neighboring Ni, Mn and O, leading to the suppression of the existing oxygen and Mn redox reactivities and the promotion of the Ni redox. Furthermore, the findings provide a complementary scenario to current oxygen redox mechanisms and shed lights on developing new routes for high-performance cathodes.
Carbon sorbent materials have shown great promise for solid-state hydrogen (H 2 ) storage. Modification of these materials with nitrogen (N) dopants has been undertaken to develop materials that can store H 2 at ambient temperatures. In this work density functional theory (DFT) calculations are used to systematically probe the influence of curvature on the stability and activity of undoped and N-doped carbon materials toward H binding. Specifically, four models of carbon materials are used: graphene, [5,5] carbon nanotube, [5,5] D 5d -C 120 , and C 60 , to extract and correlate the thermodynamic properties of active sites with varying degrees of sp 2 hybridization (curvature). From the calculations and analysis, it is found that graphitic N-doping is thermodynamically favored on more pyramidal sites with increased curvature. In contrast, it is found that the hydrogen binding energy is weakly affected by curvature and is dominated by electronic effects induced by N-doping. These findings highlight the importance of modulating the heteroatom doping configuration and the lattice topology when developing materials for H 2 storage.
Sodium layered oxides Na x MO 2 (x ≤ 1 and M = transition metal ions) have gained significant interest as sodium-ion battery (NIB) cathodes owing to their high operating voltages and potential for higher energy density compared with polyanion and Prussian blue–type cathodes. However, their practical applications are often hindered by the irreversible structural transitions leading to capacity fading during cycling. The nature and substitution of transition metal ions define the material properties and electrochemical performance. In this study, through comprehensive electrochemical characterization combined with multi-scale structural and spectroscopical analyses, we demonstrate the synergistic impacts of Lithium and Titanium doping, which not only increases overall capacity by boosting cation and anion cooperative redox contributions but also improves the rate capability and cycling stability. Specifically, Li + doping enhances the available sodium inventory for extraction, while Ti 4+ disrupts Na + /vacancy ordering at lower voltages (< 4 V) and mitigates the detrimental P2→OP4/O2 phase transition during cycling. The combined effect of Lithium and Titanium doping promotes more charge localization on Oxygen, which activates reversible lattice oxygen redox reactions at elevated voltages, contributing additional capacity beyond conventional cationic redox. This work provides crucial insights into the design of high-performance, high-capacity P2-type layered cathode materials for sodium-ion batteries.
Ruddlesden-Popper iridate Sr 3 Ir 2 O 7 is a spin–orbit coupled Mott insulator. Hole doped Sr 3 Ir 2 O 7 provides an ideal platform to study the exotic quantum phenomena that occur near the metal–insulator transition (MIT) region. Rh substitution of Ir is an effective method to induce hole doping into Sr 3 Ir 2 O 7 . However, the highest doping level reported in Sr 3 (Ir 1− x Rh x ) 2 O 7 single crystals was only around 3%, which is far from the MIT region. In this paper, we report the successful growth of single crystals of Sr 3 (Ir 1− x Rh x ) 2 O 7 with a doping level of ~ 9%. The samples have been fully characterized, demonstrating the high quality of the single crystals. Transport measurements have been carried out, confirming the tendency of MIT in these samples. The electronic structure has also been examined by angle-resolved photoemission spectroscopy (ARPES) measurements. Our results establish a platform to investigate the heavily hole doped Sr 3 Ir 2 O 7 compound, which also provide new insights into the MIT with hole doping in this material system.
Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to localized defect states marked by photoluminescence at 2400 nm and originating from the Ge substrate and buffer layer. In this study, we report on an optical study utilizing doped Ge(001) substrates to effectively suppress defect-related photoluminescence in GeSn layers by filling localized defect trap states. For this experiment, a GeSn layer with Sn content up to 10.5 ± 0.5% was grown on a doped Ge(001) substrate. Analysis of the physics of the photoluminescence spectrum collected from the GeSn thin film shows an emission at the expected wavelength of 2300 nm for 10.5 ± 0.5% Sn content and the absence of the typically observed defect-related signal at 2400 nm. This understanding is further confirmed using short-pulse optical excitation of the GeSn grown on undoped Ge substrates.
In polar semiconductors and insulators, the Fröhlich interaction between electrons and long-wavelength longitudinal optical phonons induces a many-body renormalization of the carrier effective masses and the appearance of characteristic phonon sidebands in the spectral function, commonly dubbed “polaron satellites.” The simplest model that captures these effects is the Fröhlich model, whereby electrons in a parabolic band interact with a dispersionless longitudinal optical phonon. The Fröhlich model has been employed in a number of seminal papers, from early perturbation-theory approaches to modern diagrammatic Monte Carlo calculations. One limitation of this model is that it focuses on undoped systems, thus ignoring carrier screening and Pauli blocking effects that are present in real experiments on doped samples. Here, to overcome this limitation, we extend the Fröhlich model to the case of doped systems, and we provide exact solutions for the electron spectral function, mass enhancement, and polaron satellites. We perform the analysis using two approaches, namely, Dyson’s equation with the Fan-Migdal self-energy, and the second-order cumulant expansion. We find that these two approaches provide qualitatively different results. In particular, Dyson’s approach yields better quasiparticle masses and worse satellites, while the cumulant approach provides better satellite structures, at the price of worse quasiparticle masses. Both approaches yield an anomalous enhancement of the electron effective mass at finite doping levels, which in turn leads to a breakdown of the quasiparticle picture in a significant portion of the phase diagram.
The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications in future information technology. Magnetic topological insulators (TI) have attracted much recent attention, especially after the experimental realization of quantum anomalous Hall effect. Future applications of magnetic TI hinge on the accurate manipulation of magnetism and topology by external perturbations, preferably with a gate electric field. In this work, we investigate the magneto transport properties of Cr doped Bi 2 (Se x Te 1-x ) 3 TI across the topological quantum critical point (QCP). We find that the external gate voltage has negligible effect on the magnetic order for samples far away from the topological QCP. However, for the sample near the QCP, we observe a ferromagnetic (FM) to paramagnetic (PM) phase transition driven by the gate electric field. Theoretical calculations show that a perpendicular electric field causes a shift of electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and consequently a magnetic phase transition. Finally, the in situ electrical control of the topological and magnetic properties of TI shed important new lights on future topological electronic or spintronic device applications.
Coaxial electrospinning technique was used to fabricate the core–sheath composite nanofibers of ZnO nanoparticle (Nps) (10%, 20% w/w) doped polymethyl methacrylate (PMMA) (as sheath) and polyvinyl alcohol (PVA) (as core). Fourier transform infrared (FT-IR) spectra were confirmed the weak forces arise between ZnO Nps, PMMA and PVA matrixes. The hexagonal (wurtzite) structure of ZnO Nps with ~ 30.8 nm of diameter was confirmed from the X-ray diffraction pattern. The morphology and microstructure of core–sheath composite nanofibers were confirmed from the scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It is clearly seen from the TEM images that the PMMA encapsulate the PVA core. Core–sheath composite nanofibers were assessed against Escherichia coli (E. coli) and Bacillus subtilis (B. subtilis) bacteria through quantitative, disk diffusion and viable cell count methods. It was found that ZnO Nps doped core–sheath nanofibers were effectively inhibit the growth of gram positive bacteria, B. subtilis.
Highlights: • Effects of dopant valence on the photocatalytic performance was investigated. • New strategy was worked out to investigate effects of dopant valence. • The dopant valence was changed but the ionic radius keeps constant. • Average valence of Rh and Ta in Ti{sub 0.96}Ta{sub 0.04−x}Rh{sub x}O{sub 2} was changed multiply. • The optimal photocatalyst was obtained as the average valence approaches +4. - Abstract: In order to reveal the effects of dopant average valence on the photocatalytic performance, Ta and Rh co-doped Ti{sub 0.96}Ta{sub 0.04−x}Rh{sub x}O{sub 2} (x = 0, 0.008, 0.016, 0.02, 0.024, 0.032, and 0.04) samples were crystallized at 450 °C and 800 °C, respectively; then the 800 °C crystallized x = 0.02 sample was subsequently reduced in the H{sub 2}/N{sub 2} mixture gases at 600, 700, 800, and 900 °C. Under different processing conditions, Ta remains the valence of +5, while the valence of Rh varies. Rh exhibits Rh{sup 3+} and Rh{sup 4+} in the 450 °C crystallized samples and is completely oxidized to Rh{sup 4+} in the 800 °C crystallized samples. In the reduced samples, Rh exists in the forms of Rh, Rh{sup 3+} and Rh{sup 4+}. The optimal photocatalyst is obtained as the ratio of Rh{sup 3+}/Rh{sup 4+} is 2.11 or the average valence of doped Ta and Rh is closest to the +4 valence of substituted Ti.
We use first-principles calculations to reveal the effects of divalent Pb, Ca, and Sn doping of Bi 2 Te 3 on the band structure and transport properties, including the Seebeck coefficient, α, and the reduced power factor, α 2 σ/τ, where σ is the electrical conductivity and τ is the effective relaxation time. Pb and Ca additions exhibit up to 60%–75% higher peak α 2 σ/τ than that of intrinsic Bi 2 Te 3 with Bi antisite defects. Pb occupancy and Ca occupancy of Bi sites increase σ/τ by activating high-degeneracy low-effective-mass bands near the valence band edge, unlike Bi antisite occupancy of Te sites that eliminates near-edge valence states in intrinsic Bi 2 Te 3 . Neither Pb doping nor subatomic-percent Ca doping increases α significantly, due to band averaging. Higher Ca levels increase α and diminish σ, due to the emergence of a corrugated band structure underpinned by high-effective-mass bands, attributable to Ca–Te bond ionicity. Sn doping results in a distortion of the bands with a higher density of states that may be characterized as a resonant state but decreases α 2 σ by up to 30% due to increases in the charge carrier effective mass and decreases in both spin–orbit coupling and valence band quasidegeneracy. These results, and thermal conductivity calculations for nanostructured Bi 2 Te 3 , suggest that Pb or Ca doping can enhance the thermoelectric figure of merit ZT to values up to ZT ~ 1.7, based on an experimentally determined τ. Our findings suggest that divalent doping can be attractive for realizing large ZT enhancements in pnictogen chalcogenides.
Monocrystalline Si (c-Si) solar cells with passivated contacts based on the ultrathin SiOx and doped polycrystalline Si (poly-Si) layers in a poly-Si/SiOx/c Si structure show high solar cell efficiencies that are ~26%. Excellent surface passivation using these contacts is achieved via the combined effects of chemical passivation of the SiOx/c-Si interface by the SiOx layer and field-effect passivation from the heavily doped poly-Si layer. These contacts give best performance only when annealed to temperatures higher than 850 degrees C. Structural changes in the SiOx layer and dopant diffusion from poly-Si into the underlying c-Si wafer occur during this step which are hard to investigate using conventional characterization techniques. In this work we investigate poly-Si/SiOx contacts with both a 1.5 (tunneling transport) and 2.2 (pinhole transport) nm SiOx layer using atomic force microscopy techniques. Conductive AFM on n+-poly-Si/SiOx/p-Si structures show significant spatial variations for both contact types, likely due to non-uniformities in the poly-Si layer itself. The electrical and structural variations deeper into the contact were revealed by scanning Kelvin probe microscopy after precisely etching away the poly-Si and SiOx layers and few nanometers of c-Si surface. This etching was performed using tetramethylammonium hydroxide and dilute HF solutions. The resulting surface potential maps appear similar for both contacts, and show less than 500 nm size heavily-doped regions. However, further etching of the c-Si surface reveals these heavily-doped regions to be less than 200 nm deep for the 2.2 nm SiOx contact and greater than 200 nm deep for the 1.5 nm SiOx contact.