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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 883 records · Page 49
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Understanding Data Structures by Extracting Memory Access Graphs

Understanding the data structures employed by a program is important for reverse engineering activities and can improve the results of automated software analysis techniques. In a compiled binary, access to data structure fields and array indices defined in the source program are replaced by raw pointer arithmetic. We present a representation for capturing the essential details of how a program accesses memory regions, which we call a Memory Access Graph (MAG), and a static analysis for automatically extracting this information from a program binary. The static analysis to extract the MAGs from the program is straightforward and does not require sophisticated integer or pointer analysis. The MAGs are readily understood by reverse engineers; they are generally able to perceive the data structure definition corresponding to a MAG. We briefly discuss automatic extraction of structure definitions outlining some of the difficulties in doing so.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Unified Memory: GPGPU-Sim/UVM Smart Integration

CPU/GPU heterogeneous compute platforms are an ubiquitous element in computing and a programming model specified for this heterogeneous computing model is important for both performance and programmability. A programming model that exposes the shared, unified, address space between the heterogeneous units is a necessary step in this direction as it removes the burden of explicit data movement from the programmer while maintaining performance. GPU vendors, such as AMD and NVIDIA, have released software-managed runtimes that can provide programmers the illusion of unified CPU and GPU memory by automatically migrating data in and out of the GPU memory. However, this runtime support is not included in GPGPU-Sim, a commonly used framework that models the features of a modern graphics processor that are relevant to non-graphics applications. UVM Smart was developed, which extended GPGPU-Sim 3.x to in- corporate the modeling of on-demand pageing and data migration through the runtime. This report discusses the integration of UVM Smart and GPGPU-Sim 4.0 and the modifications to improve simulation performance and accuracy.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Controlling reversible phase transitions in rare-earth nickelates for novel memory devices

Resistive switching in correlated complex oxides is lucrative for emerging applications in neuromorphic computing, and densely scaled non-volatile memory. Electrical conductance of such complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. Nevertheless, the promise of such defect-driven electronic transitions are far from realized due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies over nano-to-mesoscopic length/timescales under applied electric field. In this project, we employ a synergistic integration of density functional theory (DFT) calculations, ab initio/classical molecular dynamics (AIMD/CMD) simulations, machine learning (ML), precision synthesis, and multi-modal X-ray imaging experiments to address this knowledge gap. Such an integrated approach offers to elucidate the correlations between subtle structural distortion and oxidation states; treat localized charge carriers; describe defect/ion transport in the presence of electric field; and, in turn, greatly advance the current understanding of microstructural evolution in complex oxides under applied bias. The fundamental knowledge gained from this work will enable precise control over hierarchical defect structures and unravel new routes to manipulate resistance states in complex oxides. This, in turn, will accelerate design of novel devices with desired set of neural functionalities, and high-speed densely-scaled resistive random access memory technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Multifunctional Fiber-Reinforced Polymer Composites for Damage Detection and Memory

Self-structural health monitoring (SHM) functionalities for fiber-reinforced polymer composites have become highly sought after to ensure the structural safety of newly advancing components in the automotive, civil, mechanical, and aerospace industries. This paper introduces a self-damage detection and memory (SDDM) hybrid composite material, where the structural carbon fiber tow is transformed into a piezoresistive sensor network, and the structural glass fiber operates as electrical insulation. In this study, SDDM specimens were fabricated, and tensile and impact tests were performed. The tensile tests of SDDM specimens find two distinct loading peaks: first where the carbon fiber fails, and second where the glass fiber fails. A linear correlation was observed between the carbon fiber resistance and composite strain up to a threshold, beyond which a sharp nonlinear increase in resistance occurred. The resistance then approached infinity, coinciding with the first loading peak and failure of the carbon fiber elements. This demonstrates the potential for a damage early warning threshold. Additionally, the effect of stitching the sensor tow in a zig-zag pattern over a large area was investigated using tailored fiber placement (TFP) of 1-loop, 3-loop, and 5-loop specimens. Tensile testing found that increasing the number of loops improved the sensor’s accuracy for strain sensing. Furthermore, impact tests were conducted, and as the impact energy progressively increased, the sensor resistance permanently increased. This illustrates a capability for self-memory of microdamage throughout the life cycle of the structure, potentially useful for predicting the remaining life of the composite.

Demo, Luke B. (ORCID:0000000208806522)↗
DOE OSTI2022

HAMR - Heterogeneous Accelerator Memory Resource (HAMR) v1.0

HAMR is a library defining an accelerator technology agnostic memory model that bridges between accelerator technologies (CUDA, HIP, ROCm, OpenMP, Sycl, OpenCL, Kokos, etc) and traditional CPUs in heterogeneous computing environments. HAMR is light weight and implemented in modern C++. HAMR can be used to manage memory with in a single code or as a data model for coupling codes in a technologically agnostic way. HAMR provides a Python module for coupling C++ and Python codes which implements zero-copy data transfers to and from Python using the Numpy array interface and Numba CUDA array interface protocols.

Loring, Burlen↗
NASA NTRS1965

Improved wire memory matrix uses very little power

Thin-film, plated-wire memory matrix for computer applications requires little power yet has higher speed and four times greater storage capacity than ferrite-core memories of the same size.

Fedde, G. A.↗
NASA NTRS1966

Bipolar current driver for memory circuits

Circuit which logically determines the state of a flip-flop and amplifies the current from a clock pulse provides a bipolar driving current to a memory circuit, the polarity of which is determined by the state of a flip-flop. This principle may be applied to various memory driving circuits where power dissipation must be minimized.

Chong, C. F.↗
NASA NTRS1966

Improved memory word line configuration allows high storage density

Plated wire memory word drive line allows high storage density, good plated wire transmission and a simplified memory plane configuration. A half-turn word drive line with a magnetic keeper is used. The ground plane provides the return path for both the word current and the plated wire transmission line.

Source record↗
NASA NTRS1967

Computer memory access technique

Computer memory access commutator and steering gate configuration produces bipolar current pulses while still employing only the diodes and magnetic cores of the classic commutator, thereby appreciably reducing the complexity of the memory assembly.

Zottarelli, L. J.↗
NASA NTRS1968

Multilayer plated wire shows promise as memory device

Multilayer plated wire memory system surpasses planar thin film memories because of its high speed, simplicity, and high output. The device consists of 5 mil Be-Cu wire plated with Ni-Fe alloy about 1 micron thick crossed orthogonally by word lines.

Kadish, D.↗
NASA NTRS1971

Nonvolatile read/write memory element - A concept

Memory, with limited number of programming cycles, is achieved by using verticle, fusible links in series with oxide breakthrough elements. Memory elements are fabricated with integrated circuit technology and are ideal for low power digital computer application.

Cricchi, J. R.↗
NASA NTRS1972

Conceptual design and feasibility evaluation model of a 10 to the 8th power bit oligatomic mass memory. Volume 1: Conceptual design

The oligatomic (mirror) thin film memory technology is a suitable candidate for general purpose spaceborne applications in the post-1975 time frame. Capacities of around 10 to the 8th power bits can be reliably implemented with systems designed around a 335 million bit module. The recommended mode was determined following an investigation of implementation sizes ranging from an 8,000,000 to 100,000,000 bits per module. Cost, power, weight, volume, reliability, maintainability and speed were investigated. The memory includes random access, NDRO, SEC-DED, nonvolatility, and dual interface characteristics. The applications most suitable for the technology are those involving a large capacity with high speed (no latency), nonvolatility, and random accessing.

Recksiedler, A. L.↗
NASA NTRS1972

The alloy with a memory, 55-Nitinol: Its physical metallurgy, properties, and applications

A series of nickel titanium alloys (55-Nitinol), which are unique in that they possess a shape memory, are described. Components made of these materials that are altered in their shapes by deformation under proper conditions return to predetermined shapes when they are heated to the proper temperature range. The shape memory, together with the force exerted and the ability of the material to do mechanical work as it returns to its predetermined shape, suggest a wide variety of industrial applications for the alloy. Also included are discussions of the physical metallurgy and the mechanical, physical, and chemical properties of 55-Nitinol; procedures for melting and processing the material into useful shapes; and a summary of applications.

Jackson, C. M.↗