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At least 883 records · Page 49

Structure transition and zigzag magnetic order in Ir/Rh-substituted honeycomb lattice α - RuCl 3

Here, we report magnetization and neutron diffraction studies on crystal and magnetic structures of Ir- and Rh-substituted honeycomb lattice α-RuCl 3 . The iridium or rhodium atoms are distributed at the Ru site with little structural modification. Both systems undergo a room-temperature monoclinic C2/m to low-temperature trigonal $R\bar{3}$ phase transformation with a large recoverable hysteresis. At low temperature, a zigzag spin order is observed with the same characteristic wave vector (0,0.5,1) as in the parent α-RuCl 3 . Detailed magnetic structure refinement reveals an ordered moment of 0.32(5)µB/Ru and an upper boundary of canting angle of 15(4)º away from the basal plane at 5 K for the 10% Ir-substituted α-RuCl 3 , which is different from the 0.45–0.73 µB/Ru and 32°–48° canting angle reported in the parent compound α-RuCl 3 . The observation of unchanged RuCl 6 local octahedral environment, reduced ordered magnetic moment size and canting angle compared to previously reported highlights the potential to study quantum spin-liquid behavior through nonmagnetic ion doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Local corrugation and persistent charge density wave in ZrTe 3 with Ni intercalation

Here, the mechanism of emergent bulk superconductivity in transition-metal intercalated ZrTe 3 is investigated by studying the effect of Ni doping on the band structure and charge density wave (CDW). The study reports theoretical and experimental results in the range of Ni 0.01 ZrTe 3 to Ni 0.05 ZrTe 3 . In the highest doped samples, bulk superconductivity with T c < T CDW is observed, with a reduced T CDW compared with pure ZrTe 3 . Relativistic ab initio calculations reveal that Ni incorporation occurs preferentially through intercalation in the van der Waals gap. Analysis of the structural and electronic effects of intercalation indicate buckling of the Te sheets adjacent to the Ni site akin to a locally stabilized CDW-like lattice distortion. In contrast to the changes of T CDW observed in resistivity, experiments with low-temperature x-ray diffraction, angle-resolved-photoemission spectroscopy, as well as temperature-dependent resistivity reveal the nearly unchanged persistence of the CDW into the regime of bulk superconductivity. The CDW gap is found to be unchanged in its extent in momentum space, with the gap size also unchanged or possibly slightly reduced upon Ni intercalation. Both experimental observations suggest that superconductivity coexists with the CDW in Ni x ZrTe 3 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Cation-Dependent Light-Induced Halide Demixing in Hybrid Organic–Inorganic Perovskites

Mixed cation metal halide perovskites with increased power conversion efficiency, negligible hysteresis, and improved long-term stability under illumination, moisture, and thermal stressing have emerged as promising compounds for photovoltaic and optoelectronic applications. In this paper, we shed light on photoinduced halide demixing using in situ photoluminescence spectroscopy and in situ synchrotron X-ray diffraction (XRD) to directly compare the evolution of composition and phase changes in CH(NH 2 ) 2 CsPb-halide (FACsPb-) and CH 3 NH 3 Pb-halide (MAPb-) perovskites upon illumination, thereby providing insights into why FACs-perovskites are less prone to halide demixing than MA-perovskites. We find that halide demixing occurs in both materials. However, the I-rich domains formed during demixing accumulate strain in FACsPb-perovskites but readily relax in MA-perovskites. The accumulated strain energy is expected to act as a stabilizing force against halide demixing and may explain the higher Br composition threshold for demixing to occur in FACsPb-halides. In addition, we find that while halide demixing leads to a quenching of the high-energy photoluminescence emission from MA-perovskites, the emission is enhanced from FACs-perovskites. This behavior points to a reduction of nonradiative recombination centers in FACs-perovskites arising from the demixing process and buildup of strain. FACsPb-halide perovskites exhibit excellent intrinsic material properties with photoluminescence quantum yields that are comparable to MA-perovskites. Finally, because improved stability is achieved without sacrificing electronic properties, these compositions are better candidates for photovoltaic applications, especially as wide bandgap absorbers in tandem cells.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers

Thin gallium phosphide layers were deposited on (0 0 1) Silicon surfaces via organometallic vapor phase epitaxy and characterized by electron channeling contrast imaging (ECCI). Stacking fault pyramids at a density of up to 6 x 10 7 cm -2 were identified in the GaP nucleation layer by varying the diffraction conditions. We show that these defects originate at the GaP/Si interface and propagate on all four {1 1 1} planes. We observed that such stacking fault pyramids interact with the gliding of misfit dislocations during lattice-mismatched growth and enhance the threading dislocation density. The initial pulsing of TEGa and TBP during the nucleation of GaP on Silicon has been found to strongly influence the formation of those pyramidal defects. Changing the number of pulse cycles allowed us to lower their density by two orders of magnitude from 6 x 10 7 cm -2 to 4 x 10 5 cm -2 .

36 MATERIALS SCIENCE↗

Canting of the Magnetic Moments on the Octahedral Site of an Iron Oxide Garnet in Response to Diamagnetic Cation Substitution

Using neutron powder diffraction and magnetic susceptibility measurements, we report on the preparation and characterization of the temperature- and field-dependent properties of CaY2ZrFe4O12, a composition closely related to the high-temperature ferrimagnet Y3Fe5O12. By diluting the concentration of paramagnetic ions on the octahedral sublattice of the garnet structure, we find temperature-dependent canting of the magnetic moments. This reflects the importance of the octahedral sublattice in mediating the magnetic interactions between the tetrahedral sites and offers insight into a large number of competing magnetic interactions in the garnet structure.

Milam-Guerrero, JoAnna↗

Dissolving salt is not equivalent to applying a pressure on water

Abstract Salt water is ubiquitous, playing crucial roles in geological and physiological processes. Despite centuries of investigations, whether or not water’s structure is drastically changed by dissolved ions is still debated. Based on density functional theory, we employ machine learning based molecular dynamics to model sodium chloride, potassium chloride, and sodium bromide solutions at different concentrations. The resulting reciprocal-space structure factors agree quantitatively with neutron diffraction data. Here we provide clear evidence that the ions in salt water do not distort the structure of water in the same way as neat water responds to elevated pressure. Rather, the computed structural changes are restricted to the ionic first solvation shells intruding into the hydrogen bond network, beyond which the oxygen radial-distribution function does not undergo major change relative to neat water. Our findings suggest that the widely cited pressure-like effect on the solvent in Hofmeister series ionic solutions should be carefully revisited.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Nonequilibrium dynamics of spontaneous symmetry breaking into a hidden state of charge-density wave

Abstract Nonequilibrium phase transitions play a pivotal role in broad physical contexts, from condensed matter to cosmology. Tracking the formation of nonequilibrium phases in condensed matter requires a resolution of the long-range cooperativity on ultra-short timescales. Here, we study the spontaneous transformation of a charge-density wave in CeTe 3 from a stripe order into a bi-directional state inaccessible thermodynamically but is induced by intense laser pulses. With ≈100 fs resolution coherent electron diffraction, we capture the entire course of this transformation and show self-organization that defines a nonthermal critical point, unveiling the nonequilibrium energy landscape. We discuss the generation of instabilities by a swift interaction quench that changes the system symmetry preference, and the phase ordering dynamics orchestrated over a nonadiabatic timescale to allow new order parameter fluctuations to gain long-range correlations. Remarkably, the subsequent thermalization locks the remnants of the transient order into longer-lived topological defects for more than 2 ns.

36 MATERIALS SCIENCE↗

Spatially resolved photoluminescence brightening in individual single-walled carbon nanotubes

Single-molecule microscopy was used to image photoluminescence (PL) brightening of individual sodium-dodecyl-sulfate (SDS)-wrapped single-walled carbon nanotubes (SWCNTs) upon the addition of dithiothreitol (DTT). PL enhancement varied for each nanotube (NT), with some brightening by 16% and others by a factor of about 7. Interestingly, NTs that displayed lower initial QY values showed the largest increases in PL enhancement. SDS-SWCNTs longer than the diffraction limit were studied in order to spatially resolve the brightening phenomenon. Quite unexpectedly, a uniform, single-step PL brightening along the NT was consistently observed, suggesting that the PL enhancement is the result of a non-localized process. Furthermore, the even PL brightening seen over SWCNTs that are micrometers long implies that single point defect sites, which are known to be largely responsible for exciton nonradiative decay, play no significant role in the brightening process. Interestingly, affixing the SWCNT strongly to the substrate surface mitigated the PL brightening response, consistent with a hypothesis that surfactant reorganization upon the addition of DTT is responsible for exciton PL brightening.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Three-dimensional imaging of vortex structure in a ferroelectric nanoparticle driven by an electric field

Topological defects of spontaneous polarization are extensively studied as templates for unique physical phenomena and in the design of reconfigurable electronic devices. Experimental investigations of the complex topologies of polarization have been limited to surface phenomena, which has restricted the probing of the dynamic volumetric domain morphology in operando. Here, we utilize Bragg coherent diffractive imaging of a single BaTiO 3 nanoparticle in a composite polymer/ferroelectric capacitor to study the behavior of a three-dimensional vortex formed due to competing interactions involving ferroelectric domains. Our investigation of the structural phase transitions under the influence of an external electric field shows a mobile vortex core exhibiting a reversible hysteretic transformation path. We also study the toroidal moment of the vortex under the action of the field. Our results open avenues for the study of the structure and evolution of polar vortices and other topological structures in operando in functional materials under cross field configurations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Composition, structure, and semiconducting properties of Mg x Zr 2– x N 2 thin films

Synthesis and characterization of Mg x Zr 2– x N 2 (0.5 ≤ x ≤ 1.8) thin films deposited by reactive magnetron co-sputtering in nitrogen plasma is reported. Composition measurements show that nitrides with low oxygen content (less than 1%) can be formed up to x = 1.0, at which point an increase in oxygen content is observed. Up to composition of x > 1.6 the Mg x Zr 2– x N 2 thin films form in a rocksalt-derived crystal structure, as revealed by X-ray diffraction measurements. At x > 1.6 the films rapidly oxidize. The lattice constant of the stoichiometric MgZrN 2 composition is a = 4.537 Å, and only small changes in lattice parameter are observed with changing composition. Electrical conductivity decreases by several orders of magnitude with increasing Mg-content. The conductivity of Mg-rich (x ≥ 1) films increases with increasing measurement temperature, indicating semiconducting character of Mg-rich Mg x Zr 2– x N 2 . As a result, optical absorption measurements of these Mg-rich samples show a clear absorption onset at 1.8 eV, also indicative of semiconducting behavior.

36 MATERIALS SCIENCE↗

Epitaxial growth of Bi 2 Se 3 in the (0015) orientation on GaAs (001)

Here we present that materials with van der Waals bonding show exotic physics and may have applications in a variety of areas including new optoelectronic devices, spintronic devices, and as quantum materials. To date, control over the morphology and surface orientation of thin films of these materials without substrate pretreatment has been difficult. In this paper, the authors report the growth of Bi 2 Se 3 on GaAs (001) substrates. By controlling the growth conditions and adatom mobility, the authors are able to obtain epitaxial growth in the (0015) orientation without substrate prepatterning. Although the growth window is small, this demonstration opens the door for future control of the orientation of van der Waals materials through control of parameters during growth and via interaction with the substrate.

36 MATERIALS SCIENCE↗

Widely Tunable Mode-Hop-Free External-Cavity Quantum Cascade Laser

The external-cavity quantum cascade laser (EC-QCL) system is based on an optical configuration of the Littrow type. It is a room-temperature, continuous wave, widely tunable, mode-hop-free, mid-infrared, EC-QCL spectroscopic source. It has a single-mode tuning range of 155 cm(exp -1) (approximately equal to 8% of the center wavelength) with a maximum power of 11.1 mW and 182 cm(exp -1) (approximately equal to 15% of the center wavelength), and a maximum power of 50 mW as demonstrated for 5.3 micron and 8.4 micron EC-QCLs, respectively. This technology is particularly suitable for high-resolution spectroscopic applications, multi-species tracegas detection, and spectroscopic measurements of broadband absorbers. Wavelength tuning of EC-QCL spectroscopic source can be implemented by varying three independent parameters of the laser: (1) the optical length of the gain medium (which, in this case, is equivalent to QCL injection current modulation), (2) the length of the EC (which can be independently varied in the Rice EC-QCL setup), and (3) the angle of beam incidence at the diffraction grating (frequency tuning related directly to angular dispersion of the grating). All three mechanisms of frequency tuning have been demonstrated and are required to obtain a true mode-hop-free laser frequency tuning. The precise frequency tuning characteristics of the EC-QCL output have been characterized using a variety of diagnostic tools available at Rice University (e.g., a monochromator, FTIR spectrometer, and a Fabry-Perot spectrometer). Spectroscopic results were compared with available databases (such as HITRAN, PNNL, EPA, and NIST). These enable precision verification of complete spectral parameters of the EC-QCL, such as wavelength, tuning range, tuning characteristics, and line width. The output power of the EC-QCL is determined by the performance of the QC laser chip, its operating conditions, and parameters of the QC laser cavity such as mirror reflectivity or intracavity losses. In order to maximize the output power, an analysis and optimization of the EC laser parameters has been performed. The parameters of the beam emitted from the gain medium, such as divergence angle, beam profile, and astigmatism, have been investigated. The gain medium has been fully characterized before and after each stage of modification. The main modification steps are coating one facet of the gain chip with a high reflectivity mirror and the other facet with an anti-reflection layer. Then the chip is mounted in the EC-QCL. The optomechanical design has been reviewed and improved to provide for precise collimation of the strongly divergent beam of the QCL and the tuning diffraction grating.

Wysocki, Gerard↗

High Efficiency InGaN LEDs Emitting in Green, Amber and Beyond (Final Report)

This project focuses on developing high efficiency light emitting diodes (LEDs) with green, amber, and longer wavelengths using two compatible material systems based on III-nitride and II-IV-nitride semiconductor heterostructures. The proposed approach uses low-indium-content InGaN and ZnGeN 2 or ZnSnN 2 heterostructure quantum wells (QWs) as the active regions for high efficiency green and amber LEDs, and therefore to advance high efficiency color-mixed white LED technology. This approach takes advantage of the increased flexibility, afforded by the incorporation of the II-IV-nitrides into the III-nitride layers, to tune the QW active region to lower the emission wavelengths and to increase the electron-hole wave function overlap. This strategy paves a new way to extend the InGaN QW LED emission wavelength without using high-indium-content InGaN. An industrially preferable metalorganic chemical vapor deposition (MOCVD) method was used to develop the growth of ZnGeN 2 and ZnSnN 2 that are compatible with the InGaN growth. The unique dual chamber MOCVD instrument at OSU was used in this project. This program created an opportunity for the two institutions (The Ohio State University and Case Western Reserve University) with complementary expertise to perform this work. Two graduate students (Md Rezaul Karim (OSU) and Benthara Hewage Dinushi Jayatunga (CWRU)) gained experience in MOCVD growth and various characterization methods including scanning electron microscopy, x-ray diffraction spectroscopy, x-ray photoemission spectroscopy, Hall measurements, cathodoluminescence and photoluminescence. Both students successfully defended their PhD dissertations in April/May 2021. Both Karim and Jayatunga have joined Intel as engineers in June/July 2021. Another two graduate students Kaitian Zhang (OSU) and Chenxi Hu (CWRU) joined the project team since spring 2021 to continue on this project. They were trained on MOCVD epitaxy of InGaN QWs and materials characterization including SEM, AFM, PL, CL, XRD, Hall measurements and electroluminescence. A third student, Vijay Gopal Thirupakuzi Vangipuram (OSU), who joined the group in fall 2021 to perform LED fabrication and characterization. The key research accomplishments of the project include: (1) Successful development of MOCVD epitaxy of single crystalline ZnGeN 2 and ZnSnN 2 . MOCVD growth parameters that determine the stoichiometry of ZnGeN 2 and ZnSnN 2 films were identified. (2) Experimentally determined the band offsets between GaN/ZnGeN 2 and GaN/ZnGaSnN 2 hetero-interfaces, which agree very well with the theoretical predictions. (3) Demonstrated the incorporation of thin ZnGeN 2 layer in InGaN QWs. Proof-of-concept of the InGaN-ZnGeN 2 QW design demonstrated as much as 80 nm of red shift without increasing In composition or QW thickness. (4) InGaN/ZnGeN 2 QWs emitting at 480 nm achieved IQE of 47%. Resulted from this project, 7 journal articles were published, and 9 conference papers were presented.

36 MATERIALS SCIENCE↗

Corrosion of novel reactive silver ink and commercial silver-based metallizations in diluted acetic acid

Silver-based metallizations in photovoltaic modules are susceptible to corrosion by acetic acid generated in ethylene vinyl acetate encapsulated modules, resulting in power losses over time. Here, three silver-based metallizations are exposed to diluted acetic acid, in concentrations representative of that found in field-exposed modules. Compositional, morphological, and structural changes of the metallizations are studied over 3000 h of exposure to diluted acetic acid using Raman spectroscopy mapping, X-ray diffraction, and scanning electron microscopy. The three metallizations studied are: 1) a commercial high-temperature fire-through Ag paste, commonly used for Si diffused junction solar cells; 2) a commercial low-temperature paste normally used for silicon heterojunction cells; and 3) a novel low-temperature reactive silver ink shown to be suitable for photovoltaic applications. We find distinct corrosion rates for the high-temperature silver paste and reactive silver ink in the presence of diluted acetic acid. However, the low-temperature silver paste appears to be more corrosion resistant, likely due to a polymer layer that protects the silver particles.

36 MATERIALS SCIENCE↗

Neutron scattering investigation of rhenium orbital ordering in the 3 d – 5 d double perovskite Ca 2 FeReO 6

Here, we have carried out inelastic neutron scattering experiments to study magnetic excitations in the ordered double perovskite Ca 2 FeReO 6 . We have found a well-defined magnon mode with a bandwidth of ~50 meV below the ferrimagnetic ordering temperature ( T c ~ 520 K), similar to the previously studied Ba 2 FeReO 6 . The spin excitation is gapless for most temperatures within the magnetically ordered phase. However, a spin gap of ~10 meV opens up below ~150 K, which is well below the magnetic ordering temperature but coincides with a previously reported metal-insulator transition and onset of structural distortion. The observed temperature dependence of the spin gap provides strong evidence for ordering of Re orbitals at ~150 K, in accordance with an earlier proposal put forward by K. Oikawa et al. based on neutron diffraction as well as recent theoretical work by Lee and Marianetti. The presence of separate orbital and magnetic ordering in Ca 2 FeReO 6 suggests weak coupling between spin and orbital degrees of freedom and hints at a subdominant role played by spin-orbit coupling in describing its magnetism. In addition, we observed only one well-defined magnon band near the magnetic zone boundary, which is incompatible with simple ferrimagnetic spin waves arising from Fe and Re local moments but suggests a strong damping of the Re magnon mode.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Stacking disorder and thermal transport properties of α-RuCl 3

α-RuCl 3 , a well-known candidate material for Kitaev quantum spin liquid, is prone to stacking disorder due to the weak van der Waals bonding between the honeycomb layers. After a decade of intensive experimental and theoretical studies, the detailed correlation between stacking degree of freedom, structure transition, magnetic, and thermal transport properties remains unresolved. In this work, we reveal the effects of a small amount of stacking disorder inherent even in high quality α-RuCl 3 crystals. This small amount of stacking disorder results in the variation of the magnetic ordering temperature, and it suppresses the structure transition and thermal conductivity. Crystals with a minimal amount of stacking disorder have a T N > 7.4 K and exhibit a well-defined structure transition around 140 K upon cooling. For those with more stacking faults and a T N below 7 K, the structure transition occurs well below 140 K upon cooling and is incomplete, manifested by the diffuse streaks and the coexistence of both high-temperature and low-temperature phases down to the lowest measurement temperature. Both types of crystals exhibit oscillatory field-dependent thermal conductivity and a plateaulike feature in thermal Hall resistivity in the field-induced quantum spin liquid state. However, α-RuCl 3 crystals with a minimal amount of stacking disorder have a higher thermal conductivity that pushes the thermal Hall conductivity to be closer to the half-integer quantized value. Importantly, these findings demonstrate a strong correlation between layer stacking, structure transition, magnetic, and thermal transport properties, underscoring the importance of interlayer coupling in α-RuCl3 despite the weak van der Waals bonding.

36 MATERIALS SCIENCE↗

Structural Diversity in White-Light-Emitting Hybrid Lead Bromide Perovskites

Hybrid organic–inorganic halide perovskites are under intense investigations because of their astounding physical properties and promises for optoelectronics. Lead bromide and chloride perovskites exhibit intrinsic white-light emission believed to arise from self-trapped excitons (STEs). Here, we report a series of new structurally diverse hybrid lead bromide perovskites that have broad-band emission at room temperature. They feature Pb/Br structures which vary from 1D face-sharing structures to 3D corner- and edge-sharing structures. Through single-crystal X-ray diffraction and low-frequency Raman spectroscopy, we have identified the local distortion level of the octahedral environments of Pb 2+ within the structures. The band gaps of these compounds range from 2.92 to 3.50 eV, following the trend of “corner-sharing < edge-sharing < face-sharing”. Density functional theory calculations suggest that the electronic structure is highly dependent on the connectivity mode of the PbBr 6 octahedra, where the edge- and corner-sharing 1D structure of (2,6-dmpz) 3 Pb 2 Br 10 exhibits more disperse bands and smaller band gap (2.49 eV) than the face-sharing 1D structure of (hep)PbBr 3 (3.10 eV). Using photoemission spectroscopy, we measured the energies of the valence band of these compounds and found them to remain almost constant, while the energy of conduction bands varies. Temperature-dependent PL measurements reveal that the 2D and 3D compounds have narrower PL emission at low temperature (~5 K), whereas the 1D compounds have both free exciton emission and STE emission. Furthermore, the 1D compound (2,6-dmpz) 3 Pb 2 Br 10 has the highest photoluminescence quantum yield of 12%, owing to its unique structure that allows efficient charge carrier relaxation and light emission.

14 SOLAR ENERGY↗

Directly Linking Low-Angle Grain Boundary Misorientation to Device Functionality for GaAs Grown on Flexible Metal Substrates

A new growth method to make highly oriented GaAs thin films on flexible metal substrates has been developed, enabling roll-to-roll manufacturing of flexible semiconductor devices. The grains are oriented in the <001> direction with <1 degree misorientations between them, and they have a comparable mobility to single-crystalline GaAs at high doping concentrations. At the moment, the role of low-angle grain boundaries (LAGBs) on device performance is unknown. A series of electron backscatter diffraction (EBSD) and cathodoluminesence (CL) studies reveal that increased doping concentrations decrease the grain size and increase the LAGB misorientation. Cross-sectional scanning transmission electron microscopy (STEM) reveals the complex dislocation structures within LAGBs. Most importantly, a correlative EBSD/electron beam-induced current (EBIC) experiment reveals that LAGBs are carrier recombination centers and that the magnitude of recombination is dependent on the degree of misorientation. The presented results directly link increased LAGB misorientation to degraded device performance, and therefore, strategies to reduce LAGB misorientations and densities would improve highly oriented semiconductor devices.

36 MATERIALS SCIENCE↗