Search NASA⌕ Search

SEARCH · Search NASA

Results for “500 °C”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

Meredith, Roger D.↗
NASA NTRS2015

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated With Two Levels of Metal Interconnect

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 3000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

JFET↗
NASA NTRS2015

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 1000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

Microelectronics↗
NASA NTRS2007

Comparison of GRCop-84 to Other Cu Alloys with High Thermal Conductivities

The mechanical properties of six highly conductive copper alloys, GRCop-84, AMZIRC, GlidCop Al-15, Cu-1Cr-0.1Zr, Cu-0.9Cr, and NARloy-Z were compared. Tests were done on as-received hard drawn material, and after a heat treatment designed to simulate a brazing operation at 935 C. In the as-received condition AMZIRC, GlidCop Al-15, Cu- 1Cr-0.1Zr and Cu-0.9Cr had excellent strengths at temperatures below 500 C. However, the brazing heat treatment substantially decreased the mechanical properties of AMZIRC, Cu-1Cr-0.1Zr, Cu-0.9Cr, and NARloy-Z. The properties of GlidCop Al-15 and GRCop-84 were not significantly affected by the heat treatment. Thus there appear to be advantages to GRCop-84 over AMZIRC, Cu-1Cr-0.1Zr, Cu-0.9Cr, and NARloy-Z if use or processing temperatures greater than 500 C are expected. Ductility was lowest in GlidCop Al-15 and Cu-0.9Cr; reduction in area was particularly low in GlidCop Al-15 above 500 C, and as- received Cu-0.9Cr was brittle between 500 and 650 C. Tensile creep tests were done at 500 and 650 C; the creep properties of GRCop-84 were superior to those of brazed AMZIRC, Cu-1Cr- 0.1Zr, Cu-0.9Cr, and NARloy-Z. In the brazed condition, GRCop-84 was superior to the other alloys due to its greater strength and creep resistance (compared to AMZIRC, Cu-1Cr-0.1Zr, Cu-0.9Cr, and NARloy-Z) and ductility (compared to GlidCop Al-15).

deGroh, Henry C., III↗
NASA NTRS1975

Reaction of sulfur dioxide with modified 440C, studied by Auger electron spectroscopy and depth profiling

Auger electron spectroscopy and sputtering were used to study the interaction of SO2 with modified 440C, which is a nominally 77-wt%-Fe, 14-wt%-Cr, and 4-wt%-Mo bearing steel with C, S, Si, Ni, V, P, and Mn making up the balance. The sample was polycrystalline. Three temperatures were used: room temperature, 500 C, and 600 C. The reaction time was varied from 30 minutes to 2 hours. A surface cleaned of oxides was the starting point for each reaction. For reactions at 500 C, the major constituents Cr, O, Fe, and S were present in the surface film. At 600 C, the principal constituents of the film were Cr, O, and S with no Fe present. Therefore, a transition in film composition occurred between 500 and 600 C. Oxides were the primary constituents of the films at both temperatures. Room-temperature reactions indicated that SO2 adsorbed dissociatively, with approximately equal quantities of S and O on the surface. For the same reaction time (1 hr) and pressure, a strong temperature dependence of film thickness was observed. The film formed at 600 C was approximately seven times thicker than that formed at 500 C.

Ferrante, J.↗
NASA NTRS1975

The effect of thermal exposure on the mechanical properties of aluminum-graphite composites

The mechanical properties of aluminum-graphite composites were measured at room temperature in the as-received condition, after elevated temperature exposure and after thermal cycling. The composites were fabricated by solid-state diffusion bonding of liquid-phase Al-infiltrated Thornel 50 fibers. The results showed that the maximum longitudinal tensile strength of the as-received material was 80,000 psi, which corresponds well with the rule of mixture value. The composite strength was observed to vary widely, depending on the extent of wetting of the fibers by the aluminum. The strength of the composites in the transverse direction was generally very low, due to poor interfacial bonding. Aluminum carbide (Al4C3) formed at the surface of the fibers at temperatures greater than 500 C. Development of the carbide was shown to be diffusion-controlled and was dependent on the time and temperature used. It was shown that the tensile strength was virtually unaffected by heat-treatment up to 500 C; beyond that temperature a drastic degradation of tensile strength occurred. Thermal cycling of the composites below 500 C resulted in an observable degradation of the composite strength.

Khan, I. H.↗
NASA NTRS2006

Comparison of AMZIRC and GRCop-84

The mechanical properties of two copper alloys with high thermal conductivity, GRCop-84 and AMZIRC, were compared. These are competing alloys in high temperature, high heat flux applications such as rocket nozzles. The GRCop-84 data presented was taken from previous work. The results of new tensile, creep, and compression tests on AMZIRC are presented. Tests were done on as-received hard drawn material, and on material that had been subjected to a heat treatment designed to simulate a brazing operation at 935 C. As-received AMZIRC was found to have excellent properties at temperatures below 550 C, with room temperature yield and ultimate tensile strengths of about 500 MPa, and ductile failures. By comparison, GRCop-84 s room temperature tensile yield and ultimate strengths are about 200 and 380 MPa respectively. However, the simulated brazing heat treatment substantially decreased the mechanical properties of AMZIRC; and the strength of as-received AMZIRC dropped precipitously as test temperatures exceeded 500 C. The properties of GRCop-84 were not significantly affected by the 935 C heat treatment. As a result, there appear to be advantages to GRCop- 84 over AMZIRC if use or processing temperatures of greater than 500 C are expected. Tensile creep tests were done at 500 and 650 C. At these temperatures, the creep properties of GRCop-84 were superior to AMZIRC s. At equivalent rupture life and stress, GRCop-84 was found to have a 150 C temperature advantage over AMZIRC; for equivalent rupture life and temperature GRCop-84 was two times stronger.

de Groh, Henry C. III↗
NASA NTRS2016

Electrical Performance of a High Temperature 32-I/O HTCC Alumina Package

A high temperature co-fired ceramic (HTCC) alumina material was previously electrically tested at temperatures up to 550 C, and demonstrated improved dielectric performance at high temperatures compared with the 96% alumina substrate that we used before, suggesting its potential use for high temperature packaging applications. This paper introduces a prototype 32-I/O (input/output) HTCC alumina package with platinum conductor for 500 C low-power silicon carbide (SiC) integrated circuits. The design and electrical performance of this package including parasitic capacitance and parallel conductance of neighboring I/Os from 100 Hz to 1 MHz in a temperature range from room temperature to 550 C are discussed in detail. The parasitic capacitance and parallel conductance of this package in the entire frequency and temperature ranges measured does not exceed 1.5 pF and 0.05 microsiemens, respectively. SiC integrated circuits using this package and compatible printed circuit board have been successfully tested at 500 C for over 3736 hours continuously, and at 700 C for over 140 hours. Some test examples of SiC integrated circuits with this packaging system are presented. This package is the key to prolonged T greater than or equal to 500 C operational testing of the new generation of SiC high temperature integrated circuits and other devices currently under development at NASA Glenn Research Center.

dielectric performance↗
NASA NTRS1979

Effects of isothermal and cyclic exposures on interface structure and mechanical properties of FPalpha-Al2O3/aluminum composites

The microstructural and interface stability of FPalpha-Al203/Al-Li composites are investigated as a function of isothermal exposure at 500 C or thermal cycling between 140 and 500 C with hold time at Tmax. Interfacial morphology, growth kinetics, crystal structure, and composition of interfacial reaction products are characterized. Strength is monitored in the transverse orientation, and fracture mechanics is analyzed in terms of interface reaction products. The interfacial reaction product in FP/Al is Li2O.5Al2O3. Significant fiber-matrix reaction occurs during fabrication. The number of thermal cycles rather than total time at Tmax is the determining factor in strength degradation, thermal cycling giving rise to voids at the fiber-matrix interface. Extensive interface failures occur at composite fracture stresses below about 128 MPa; above this stress level failure is attributed to ductile matrix fracture.

Kim, W. M.↗
NASA NTRS2013

Packaging Technologies for High Temperature Electronics and Sensors

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Chen, Liang-Yu↗
NASA NTRS1980

Refractory thermoelectric materials

The Seebeck coefficient and electrical resistivity of boron-carbon (B-C) and boron-carbon-silicon (B-C-Si)) P-type alloys are reported for temperatures up to 500 C. Using available literature values for the thermal conductivity of B-C alloys, thermoelectric figure-of-merit values of 1.37 x 10 to the -5th and 1.20 x 10 to the -4th/deg C are calculated for 100 and 500 C, respectively. Sulfur-deficient rare earth sesquisulfide N-type alloys exhibit Seebeck coefficients which are relatively insensitive to alloy composition over the composition range investigated but are very sensitive to fabrication parameters.

Elsner, N. B.↗
NASA NTRS1983

In-situ TEM investigations of graphic-epitaxy and small particles

Palladium was deposited inside a controlled-vacuum specimen chamber of a transmission electron microscope (TEM) onto MgO and alpha-alumina substrate surfaces. Annealing and various effects of gas exposure of the particulate Pd deposits were studied in-situ by high resolution TEM and electron diffraction. Whereas substrate temperatures of 500 C or annealing of room temperature (RT) deposits to 500 C were needed to obtain epitaxy on sapphire, RT deposits on MgO were perfectly epitaxial. For Pd/MgO a lattice expansion of 2 to 4% was noted; the highest values of expansion were found for the smallest particles. The lattice expansion of small Pd particles on alumina substrates was less than 1%. Long-time RT exposure of Pd/MgO in a vacuum yielded some moblity and coalescence events, but notably fewer than for Pd on sapphire. Exposure to air or oxygen greatly enhanced the particle mobility and coalescence and also resulted in the flattening of Pd particles on MgO substrates. Electron-beam irradiation further enhanced this effect. Exposure to air for several tens of hours of Pd/MgO led to strong coalescence.

Heinemann, K.↗
NASA NTRS1991

Temperature dependence of hardness in yttria-stabilized zirconia single crystals

The temperature dependence of hardness and microcracking in single-crystal 9.5-mol pct-Y2O3-fully-stabilized cubic-ZrO2 was studied as a function of orientation. Crack lengths increased with increased temperature up to 500 C; above 800 C, no cracks were found, indicating an indentation brittle-to-ductile transition of about 800 C. The temperature dependence of hardness was reduced around 500 C. Etching studies to delineate the plastic zone around and below indents identified the operative slip systems. The role of dislocations and their interactions within the plastic zone on the hardness and indentation fracture behavior of cubic-ZrO2 are discussed.

Morscher, Gregory N.↗
NASA NTRS2000

Packaging Technology Developed for High-Temperature SiC Sensors and Electronics

A ceramic- and thick-film-materials-based prototype electronic package designed for silicon carbide (SiC) high-temperature sensors and electronics has been successfully tested at 500 C in an oxygen-containing air environment for 500 hours. This package was designed, fabricated, assembled, and electronically evaluated at the NASA Glenn Research Center at Lewis Field with an in-house-fabricated SiC semiconductor test chip. High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as space missions to the inner solar system or the emission control electronics and sensors in aeronautical engines. Single-crystal SiC has such excellent physical and chemical material properties that SiC-based semiconductor electronics can operate at temperatures over 600 C, which is significantly higher than the limit for Si-based semiconductor devices. SiC semiconductor chips were recently demonstrated to be operable at temperatures as high as 600 C, but only in the probe station environment because suitable packaging technology for sensors and electronics at temperatures of 500 C and beyond did not exist. Thus, packaging technology for SiC-based sensors and electronics is immediately needed for both application and commercialization of high-temperature SiC sensors and electronics. In response to this need, researchers at Glenn designed, fabricated, and assembled a prototype electronic package for high-temperature electronics, sensors, and microelectromechanical systems (MEMS) using aluminum nitride (AlN) substrate and gold (Au) thick-film materials. This prototype package successfully survived a soak test at 500 C in air for 500 hours. Packaging components tested included thick-film high-temperature metallization, internal wire bonds, external lead bonds, and a SiC diode chip die-attachment. Each test loop, which was composed of thick-film printed wire, wire bond, and lead bond was subjected to a 50-mA direct current for 250 hours at 500 C.

Chen, Liang-Yu↗
NASA NTRS2004

Effects of Initial Powder Size on the Mechanical Properties and Microstructure of As-Extruded GRCop-84

GRCop-84 was developed to meet the mechanical and thermal property requirements for advanced regeneratively cooled rocket engine main combustion chamber liners. It is a ternary Cu- Cr-Nb alloy having approximately 8 at% Cr and 4 at% Nb. The chromium and niobium constituents combine to form 14 vol% Cr2Nb, the strengthening phase. The alloy is made by producing GRCop-84 powder through gas atomization and consolidating the powder using extrusion, hot isostatic pressing (HIP) or vacuum plasma spraying (VPS). GRCop-84 has been selected by Rocketdyne, Ratt & Wlutney and Aerojet for use in their next generation of rocket engines. GRCop-84 demonstrates favorable mechanical and thermal properties at elevated temperatures. Compared to NARloy-Z, the currently used inaterial in the Space Shuttle, GRCop-84 has approximately twice the yield strength, 10-1000 times the creep life, and 1.5-2.5 times the low cycle fatigue life. The thermal expansion of GRCop-84 is 7515% less than NARloy-Z which minimizes thermally induced stresses. The thermal conductivity of the two alloys is comparable at low temperature but NARloy-Z has a 20-50 W/mK thermal conductivity advantage at typical rocket engine hot wall temperatures. GRCop-84 is also much more microstructurally stable than NARloy-Z which translates into better long term stability of mechanical properties. Previous research into metal alloys fabricated by means of powder metallurgy (PM), has demonstrated that initial powder size can affect the microstructural development and mechanical properties of such materials. Grain size, strength, ductility, size of second phases, etc., have all been shown to vary with starting powder size in PM-alloys. This work focuses on characterizing the effect of varying starting powder size on the microstructural evolution and mechanical properties of as- extruded GRCop-84. Tensile tests and constant load creep tests were performed on extrusions of four powder meshes: +140 mesh (great3er than l05 micron powder size), -140 mesh (less than or equal to 105 microns), -140 plus or minus 270 (53 - 105 microns), and - 270 mesh (less than or equal to 53 microns). Samples were tested in tension at room temperature and at 500 C (932 F). Creep tests were performed under vacuum at 500 C using a stress of 111 MPa (16.1 ksi). The fracture surfaces of selected samples from both tests were studied using a Scanning Electron Microscope (SEM). The as-extruded materials were also studied, using both optical microscopy and SEM analysis, to characterize changes within the microstructure.

Okoro, Chika L.↗
NASA NTRS1978

Measurement of the time-temperature dependent dynamic mechanical properties of boron/aluminum composites

A flexural vibration test and associated equipment were developed to accurately measure the low strain dynamic modulus and damping of composite materials from -200 C to over 500 C. The basic test method involves the forced vibration of composite bars at their resonant free-free flexural modes in a high vacuum cryostat furnace. The accuracy of these expressions and the flexural test was verified by dynamic moduli and damping capacity measurements on 50 fiber volume percent boron/aluminum (B/Al) composites vibrating near 2000 Hz. The phase results were summarized to permit predictions of the B/Al dynamic behavior as a function of frequency, temperature, and fiber volume fraction.

Dicarlo, J. A.↗