Welding of very thin foil.
Electron beam welding method for very thin foils, discussing welding of pinhole free Ni, Cu and stainless steel foils
Fowler, P.↗
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(abstract) Optical Scattering and Surface Microroughness of Ion Beam Deposited Au and Pt Thin Films
Thin films of gold and platinum have been deposited onto superpolished fused silica substrates using thermal evaporation, ion assisted deposition (IAD), and ion assisted sputtering. The influence of ion beam flux, thin film material, and deposition rate on the films microroughness have been investigated. Short range surface microroughness of the films has been examined using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Long range surface microroughness has been characterized using an angle resolved optical scatterometer. Results indicate that ion beam deposited coatings have improved microstructure over thermally evaporated films.
assisted sputtering fused silica ion beam microrou↗
One-dimensional analysis of filamentary composite beam columns with thin-walled open sections
Vlasov's one-dimensional structural theory for thin-walled open section bars was originally developed and used for metallic elements. The theory was recently extended to laminated bars fabricated from advanced composite materials. The purpose of this research is to provide a study and assessment of the extended theory. The focus is on flexural and torsional-flexural buckling of thin-walled, open section, laminated composite columns. Buckling loads are computed from the theory using a linear bifurcation analysis and a geometrically nonlinear beam column analysis by the finite element method. Results from the analyses are compared to available test data.
Lo, Patrick K.-L.↗
Electron-beam induced damage in thin insulating films on compound semiconductors
Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.
Pantic, Dragan M.↗
Electron-Beam Deposition of Superconducting Molybdenum Thin Films for the Development of Mo/Au TES X-Ray Microcalorimeter
We are exploring the properties of electron-beam evaporated molybdenum thin films on silicon nitride coated silicon wafers at substrate temperatures between room temperature and 650 C. The temperature dependence of film stress, transition temperature, and electrical properties are presented. X-ray diffraction measurements are performed to gain information on molybdenum crystallite size and growth. Results show the dominant influence of the crystallite size on the intrinsic properties of our films. Wafer-scale uniformity, wafer yield, and optimal thermal bias regime for TES fabrication are discussed.
Microcalorimeter↗
Stress distribution in a beam of orthotropic material subjected to a concentrated load
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EQUATIONS, DIFFERENTIAL-STRESSES↗
Synthesis and Physical Properties of Manganese Chromium Nitride Thin Films Grown via Molecular Beam Epitaxy
Here, we demonstrate the ability to grow epitaxial thin films of manganese–chromium nitride (Mn x Cr 1–x N) across the entire composition range on magnesium oxide (MgO) (1 0 0) surfaces by molecular beam epitaxy. By independently controlling the ratio of the atomic fluxes of manganese and chromium, the compositional dependence of structural and electrical transport properties is determined. Soft X-ray absorption shows that the valence states of Cr( 3+ ) and Mn( 3+ ) remain identical among these MnCrN epitaxial films. The metallic transport behavior of binary manganese nitride (MnN) and chromium nitride (CrN) is suppressed in the ternary alloys. Changes in room temperature electrical resistivity of up to 100 times and 5 orders of magnitude at cryogenic temperatures are observed. This work expands the variety of nitride compounds available for epitaxial integration and could provide additional flexibility for the development of metal–semiconductor–insulator junctions for spintronic devices.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Single-beam ion source enhanced growth of transparent conductive thin films
A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. The ion source emits a single beam of ions that interact with the deposited film and simultaneously enhances the magnetron discharge. The magnetron voltage can be adjusted over a wide range, from approximately 240 to 130 V, as the voltage of the ion source varies from 0 to 150 V, while the magnetron current increases accordingly. The low-voltage high-current magnetron discharge enables a 'soft sputtering mode', which is beneficial for thin-film growth. Indium tin oxide (ITO) thin films were deposited at room temperature using a combined single-beam ion source and magnetron sputtering. Furthermore, the ion beam resulted in the formation of polycrystalline ITO thin films with significantly reduced resistivity and surface roughness. Single-beam ion-source-enhanced magnetron sputtering has many potential applications in which low-temperature growth of thin films is required, such as coatings for organic solar cells.
36 MATERIALS SCIENCE↗
Localized Strain Measurement in Molecular Beam Epitaxially Grown Chalcogenide Thin Films by Micro-Raman Spectroscopy
Not Available
36 MATERIALS SCIENCE↗
XeF 2 gas assisted focused electron beam induced etching of niobium thin films: towards direct write editing of niobium superconducting devices
Focused electron beam induced etching (FEBIE) of Nb films produced a maximum etching yield of 3 Nb atoms/e − while varying beam energy, beam current, dwell time, and XeF 2 precursor working pressure. An optimized etch resolution of 17 nm was achieved.
Gellerup, Spencer [Department of Material Science ↗
Theory of anisotropic thin-walled closed-cross-section beams
A variationally and asymptotically consistent theory is developed in order to derive the governing equations of anisotropic thin-walled beams with closed sections. The theory is based on an asymptotic analysis of two-dimensional shell theory. Closed-form expressions for the beam-stiffness coefficients, stress and displacement fields are provided. The influence of material anisotropy on the displacement field is identified. A comparison with the displacement fields obtained by other analytical developments is performed. The stiffness coefficients and static response are also compared with finite element predictions, closed-form solutions and test data.
Berdichevsky, Victor↗
Superconducting phase of Ti x O y thin films grown by molecular beam epitaxy
Here we investigate the complex relationship between the growth conditions and the structural and transport properties of Ti x O y thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to superconductivity and insulating states are stabilized by effectively tuning the O/Ti ratio via the Ti flux rate and the O partial pressure P Ox for films grown on (0001)-Al 2 O 3 substrates at 850° C. A cubic c-TiO 1±δ buffer layer is formed for low O/Ti ratios, while a corundum cr-Ti 2 O 3 layer is formed under higher-oxidizing conditions. Metallicity is observed for c-TiO 1-δ buffer layers. The superconducting γ -Ti 3 O 5 Magnéli phase is found to nucleate on a c-TiO 1-δ buffer for intermediate POx conditions, and an insulator-superconducting transition is observed at 4.5 K (T$^{onset}_{C}$ = 6K) for 85 nm thick films. Strain relaxation of γ -Ti 3 O 5 occurs with increasing film thickness and correlates with a thickness-dependent increase in T C observed for Ti x O y thin films.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
The Formation of Thin Continuous Films from Isolated Nuclei
Formation of thin continuous films from isolated nuclei and effect of electron beam, residual gases, and surface conditions on film growth
ELECTRON BEAM↗
Sensitivity of inelastic response to numerical integration of strain energy
The exact solution to the quasi-static, inelastic response of a cantilever beam of rectangular cross section subjected to a bending moment at the tip is obtained. The material of the beam is assumed to be linearly elastic-linearly strain-hardening. This solution is then compared with three different numerical solutions of the same problem obtained by minimizing the total potential energy using Gaussian quadratures of two different orders and a Newton-Cotes scheme for integrating the strain energy of deformation. Significant differences between the exact dissipative strain energy and its numerical counterpart are emphasized. The consequence of this on the nonlinear transient responses of a beam with solid cross section and that of a thin-walled beam on elastic supports under impulsive loads are examined.
Kamat, M. P.↗
Orientation and shape-control of an orbiting flexible beam under the influence of solar radiation pressure
In this paper, the uncontrolled and controlled dynamics of a thin flexible beam in orbit and in the presence of solar radiation disturbance are analyzed. A beam nominally oriented along (i) the local horizontal and carrying a gimballed rigid dumbbell for gravity stabilization, and (ii) a beam nominally oriented along the local vertical are considered. The uncontrolled dynamics of the beam in the presence of the solar radiation pressure disturbance shows the excitation of the rigid pitch mode. The control laws previously designed for the case where the environmental effects were neglected, are found to be inadequate to control the shape and orientation of very flexible beams that are exposed to solar radiation disturbances. The control laws and the gain parameters are reevaluated for both cases of nominal beam orientations; this results, in general, in increased robustness of the closed-loop system. Methods of obtaining a robust control system in the presence of environmental perturbations are discussed.
Krishna, R.↗
Production and characterization of thin, self-supporting Si foils for use as targets in radioactive beam experiments
Development of thin, self-supporting silicon foils (both natural and isotopically-enriched) for use as targets in reaction studies with radioactive beams is detailed. Foils with a thickness of ~220 μg/cm 2 were produced using vapor deposition and were floated onto aluminum frames with 10–15 mm diameter holes. During their production, the foil thickness was measured using a quartz crystal monitor. Subsequently, the foil thickness was characterized by particle energy loss measurements and Rutherford backscattering (RBS). These measurements demonstrated that the thickness could be determined to within a 0.5% uncertainty. The elemental purity of the foils was assessed using RBS and X-ray photoelectron spectroscopy. Lastly, this analysis demonstrated that the foils have 87%–90% silicon abundance.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Evidence for In-Plane Electrical Polarization in 3R-β’-In 2 Se 3 Thin Films Grown by Molecular Beam Epitaxy
β-In 2 Se 3 has been identified as a potential ferroelectric. This work describes the growth of β-In 2 Se 3 via molecular beam epitaxy along with a description of its properties, including the search for switchable polarization in 3R-β’-In2Se3. The thin-film morphology, crystal structure, and phase maps of β-In 2 Se 3 on Si(111) and Al 2 O 3 (0001) were evaluated by atomic force microscopy, X-ray diffraction, and Raman spectroscopy as a function of the atomic Se/In flux ratio and growth temperature. Smooth β-In 2 Se 3 thin films were successfully realized on Si(111) at a substrate temperature of 150 °C using a Se/In flux ratio of 5.7, as well as on Al 2 O 3 (0001) at 450 °C using a Se/In flux ratio of 5.5. Scanning transmission electron microscopy (STEM) confirms the 3R polytype of β-In 2 Se 3 in films on both substrates, with a minor disorder associated with the 2H polytype at the interface. Indications of in-plane Se atom displacements characteristic of the 3R-β’-In 2 Se 3 polytype were found by STEM and second harmonic generation analysis in films on Al 2 O 3 (0001), but not in films on Si(111). Furthermore, attempts at electrical polarization switching did not produce compelling evidence for ferroelectricity. Instead, electrical transport measurements demonstrated locally varying anisotropic responses with the applied electric fields along different in-plane directions, with some hysteresis associated with the trapping of charges.
36 MATERIALS SCIENCE↗
A finite element formulation for the large deflection random response of thermally buckled beams
The effects of temperature and acoustic loading are included in a theoretical finite element large deflection formulation for thin, isotropic beams. Thermal loads are applied as steady-state temperature distributions, and acoustic loads are taken to be ergodic and Gaussian with zero mean and uniform magnitude and phase along the length of the beam. Material properties are considered presently to be independent of temperature. Also, inplane and rotary inertia terms are assumed to be negligible, and all inplane edge conditions are taken to be immovable. For the random response analysis, both auto- and cross-correlation terms are included. The nature of the loads leads to the solution of two separate problems. First, the problem of thermal postbuckling is solved to determine the deflections and stresses due to the thermal load only. These deflections and stresses are then used as initial deflections and stresses for the random vibration analysis. Root-mean-square (RMS) maximum deflections and strains are obtained and compared with previous classical equivalent linearization results.
Locke, James↗