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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Definition of defect size from ultrasonic inspection.

Attempt to obtain a set of relationships between testing parameters defining the range of defect size that can be associated with a given echo amplitude and defect depth. These relationships allow the user to find the largest defect that will return a signal equal to that from a flat hole of known diameter and depth, and the signal amplitude ratio between worst case and flat hole defects of equal diameter. The variation of the data with defect and testing parameters is shown. The results are obtained analytically, with laboratory corroboration, by calculation of the echo amplitude of the defect shape yielding the smallest return signal, a sphere, and the echo amplitude of the defect shape yielding the largest return signal, a flat hole.

Bennet, S. B.↗
NASA NTRS1981

Effects of artificially produced defects on film thickness distribution in sliding EHD point contacts

The effects of artificially produced dents and grooves on the elastohydrodynamic (EHD) film thickness profile in a sliding point contact were investigated by means of optical interferometry. The defects, formed on the surface of a highly polished ball, were held stationary at various locations within and in the vicinity of the contact region while the disk was rotating. It is shown that the defects, having a geometry similar to what can be expected in practice, can dramatically change the film thickness which exists when no defects are present in or near the contact. This change in film thickness is mainly a function of the position of the defects in the inlet region, the geometry of the defects, the orientation of the defects in the case of grooves, and the depth of the defect relative to the central film thickness.

Cusano, C.↗
NASA NTRS1981

The effects of artificially-produced defects on the film thickness distribution in sliding EHD point contacts

Effects of artificially produced dents and grooves on the elastohydrodynamic film thickness profile in a sliding point contact are investigated using optical interferometry. Defects on the surface of a highly polished ball are held stationary at various locations within the vicinity of the contact region while the disk is rotating. It is shown that defects can dramatically change the film thickness which exists when no defects are present in or near the contact, and it is shown that the change in thickness is mainly a function of the position of the defects in the inlet region, the geometry of the defects, the orientation of the defects in the case of grooves, and the depth of the defect relative to the central film thickness.

Cusano, C.↗
NASA NTRS2003

Defect Clustering and Nano-Phase Structure Characterization of Multi-Component Rare Earth Oxide Doped Zirconia-Yttria Thermal Barrier Coatings

Advanced oxide thermal barrier coatings have been developed by incorporating multi-component rare earth oxide dopants into zirconia-yttria to effectively promote the creation of the thermodynamically stable, immobile oxide defect clusters and/or nano-scale phases within the coating systems. The presence of these nano-sized defect clusters has found to significantly reduce the coating intrinsic thermal conductivity, improve sintering resistance, and maintain long-term high temperature stability. In this paper, the defect clusters and nano-structured phases, which were created by the addition of multi-component rare earth dopants to the plasma-sprayed and electron-beam physical vapor deposited thermal barrier coatings, were characterized by high-resolution transmission electron microscopy (TEM). The defect cluster size, distribution, crystallographic and compositional information were investigated using high-resolution TEM lattice imaging, selected area diffraction (SAD), electron energy-loss spectroscopy (EELS) and energy dispersive spectroscopy (EDS) analysis techniques. The results showed that substantial defect clusters were formed in the advanced multi-component rare earth oxide doped zirconia- yttria systems. The size of the oxide defect clusters and the cluster dopant segregation was typically ranging from 5 to 50 nm. These multi-component dopant induced defect clusters are an important factor for the coating long-term high temperature stability and excellent performance.

Zhu, Dongming↗
NASA NTRS1990

Defect Clustering and Nano-Phase Structure Characterization of Multi-Component Rare Earth Oxide Doped Zirconia-Yttria Thermal Barrier Coatings

Advanced oxide thermal barrier coatings have been developed by incorporating multi- component rare earth oxide dopants into zirconia-yttria to effectively promote the creation of the thermodynamically stable, immobile oxide defect clusters and/or nano-scale phases within the coating systems. The presence of these nano-sized defect clusters has found to significantly reduce the coating intrinsic thermal conductivity, improve sintering resistance, and maintain long-term high temperature stability. In this paper, the defect clusters and nano-structured phases, which were created by the addition of multi-component rare earth dopants to the plasma- sprayed and electron-beam physical vapor deposited thermal barrier coatings, were characterized by high-resolution transmission electron microscopy (TEM). The defect cluster size, distribution, crystallographic and compositional information were investigated using high-resolution TEM lattice imaging, selected area diffraction (SAD), and energy dispersive spectroscopy (EDS) analysis techniques. The results showed that substantial defect clusters were formed in the advanced multi-component rare earth oxide doped zirconia-yttria systems. The size of the oxide defect clusters and the cluster dopant segregation was typically ranging fiom 5 to 50 nm. These multi-component dopant induced defect clusters are an important factor for the coating long-term high temperature stability and excellent performance.

Zhu, Dongming↗
NASA NTRS2010

Handheld White Light Interferometer for Measuring Defect Depth in Windows

Accurate quantification of defects (scratches and impacts) is vital to the certification of flight hardware and other critical components. The amount of damage to a particular component contributes to the performance, reliability, and safety of a system, which ultimately affects the success or failure of a mission or test. The launch-commit criteria on a Space Shuttle Orbiter window are governed by the depth of the defects that are identified by a visual inspection. This measurement of a defect is not easy to obtain given the environment, size of the defect, and location of the window(s). The determination of depth has typically been performed by taking a mold impression and measuring the impression with an optical profiling instrument. Another method of obtaining an estimate of the depth is by using a refocus microscope. To use a refocus microscope, the surface of the glass and bottom of the defect are, in turn, brought into focus by the operator. The amount of movement between the two points corresponds to the depth of the defect. The refocus microscope requires a skilled operator and has been proven to be unreliable when used on Orbiter windows. White light interferometry was chosen as a candidate to replace the refocus microscope. The White Light Interferometer (WLI) was developed to replace the refocus microscope as the instrument used for measuring the depth of defects in Orbiter windows. The WLI consists of a broadband illumination source, interferometer, detector, motion control, displacement sensor, mechanical housing, and support electronics. The illumination source for the WLI is typically a visible light emitting diode (LED) or a near-infrared superluminescent diode (SLD) with power levels of less than a milliwatt. The interferometer is a Michelson configuration consisting of a 1-in. (2.5-cm) cube beam splitter, a 0.5-in. (1.3-cm) optical window as a movable leg (used to closely match the return intensity of the fixed leg from the window), and a mirrored prism to fold the optics into the mechanical housing. The detector may be one of many C-mount CCD (charge-coupled device) cameras. Motion is provided by a commercial nanostepping motor with a serial interface. The displacement sensor is a custom device specifically designed for this application. The mechanical housing and support electronics were designed to integrate the various components into an instrument that could be physically handled by a technician and easily transported.

Youngquist, Robert↗
NASA NTRS2004

Improved Method of Locating Defects in Wiring Insulation

An improved method of locating small breaches in insulation on electrical wires combines aspects of the prior dielectric withstand voltage (DWV) and time-domain reflectometry (TDR) methods. The method was invented to satisfy a need for reliably and quickly locating insulation defects in spacecraft, aircraft, ships, and other complex systems that contain large amounts of wiring, much of it enclosed in structures that make it difficult to inspect. In the DWV method, one applies a predetermined potential (usually 1.5 kV DC) to the wiring and notes whether the voltage causes any arcing between the wiring and ground. The DWV method does not provide an indication of the location of the defect (unless, in an exceptional case, the arc happens to be visible). In addition, if there is no electrically conductive component at ground potential within about 0.010 in. (approximately equal to 0.254 mm) of the wire at the location of an insulation defect, then the DWV method does not provide an indication of the defect. Moreover, one does not have the option to raise the potential in an effort to increase the detectability of such a defect because doing so can harm previously undamaged insulation. In the TDR method as practiced heretofore, one applies a pulse of electricity having an amplitude of less than 25 V to a wire and measures the round-trip travel time for the reflection of the pulse from a defect. The distance along the wire from the point of application of the pulse to the defect is then calculated as the product of half the round-trip travel time and the characteristic speed of a propagation of an electromagnetic signal in the wire. While the TDR method as practiced heretofore can be used to locate a short or open circuit, it does not ordinarily enable one to locate a small breach in insulation because the pulse voltage is too low to cause arcing and thus too low to induce an impedance discontinuity large enough to generate a measurable reflection. The present improved method overcomes the weaknesses of both the prior DWV and the prior TDR method.

Greulich, Owen R.↗
NASA NTRS2014

AE (Acoustic Emission) for Flip-Chip CGA/FCBGA Defect Detection

C-mode scanning acoustic microscopy (C-SAM) is a nondestructive inspection technique that uses ultrasound to show the internal feature of a specimen. A very high or ultra-high-frequency ultrasound passes through a specimen to produce a visible acoustic microimage (AMI) of its inner features. As ultrasound travels into a specimen, the wave is absorbed, scattered or reflected. The response is highly sensitive to the elastic properties of the materials and is especially sensitive to air gaps. This specific characteristic makes AMI the preferred method for finding "air gaps" such as delamination, cracks, voids, and porosity. C-SAM analysis, which is a type of AMI, was widely used in the past for evaluation of plastic microelectronic circuits, especially for detecting delamination of direct die bonding. With the introduction of the flip-chip die attachment in a package; its use has been expanded to nondestructive characterization of the flip-chip solder bumps and underfill. Figure 1.1 compares visual and C-SAM inspection approaches for defect detection, especially for solder joint interconnections and hidden defects. C-SAM is specifically useful for package features like internal cracks and delamination. C-SAM not only allows for the visualization of the interior features, it has the ability to produce images on layer-by-layer basis. Visual inspection; however, is only superior to C-SAM for the exposed features including solder dewetting, microcracks, and contamination. Ideally, a combination of various inspection techniques - visual, optical and SEM microscopy, C-SAM, and X-ray - need to be performed in order to assure quality at part, package, and system levels. This reports presents evaluations performed on various advanced packages/assemblies, especially the flip-chip die version of ball grid array/column grid array (BGA/CGA) using C-SAM equipment. Both external and internal equipment was used for evaluation. The outside facility provided images of the key features that could be detected using the most advanced C-SAM equipment with a skilled operator. Investigation continued using in-house equipment with its limitations. For comparison, representative X-rays of the assemblies were also gathered to show key defect detection features of these non-destructive techniques. Key images gathered and compared are: Compared the images of 2D X-ray and C-SAM for a plastic LGA assembly showing features that could be detected by either NDE technique. For this specific case, X-ray was a clear winner. Evaluated flip-chip CGA and FCBGA assemblies with and without heat sink by C-SAM. Only the FCCGA package that had no heat sink could be fully analyzed for underfill and bump quality. Cross-sectional microscopy did not revealed peripheral delamination features detected by C-SAM. Analyzed a number of fine pitch PBGA assemblies by C-SAM. Even though the internal features of the package assemblies could be detected, C-SAM was unable to detect solder joint failure at either the package or board level. Twenty times touch ups by solder iron with 700degF tip temperature, each with about 5 second duration, did not induce defects to be detected by C-SAM images. Other techniques need to be considered to induce known defects for characterization. Given NASA's emphasis on the use of microelectronic packages and assemblies and quality assurance on workmanship defect detection, understanding key features of various inspection systems that detect defects in the early stages of package and assembly is critical to developing approaches that will minimize future failures. Additional specific, tailored non-destructive inspection approaches could enable low-risk insertion of these advanced electronic packages having hidden and fine features.

Ghaffarian, Reza↗
NASA NTRS2019

Design of an Automated Ultrasonic Scanning System for In-Situ Composite Cure Monitoring and Defect Detection

The preliminary design and development of an automated ultrasonic scanning system for in-situ composite cure monitoring and defect detection in the high temperature environment of an oven was completed. This preliminary design is a stepping stone to deployment in the high temperature and high pressure environment of an autoclave, the primary cure method of aerospace grade thermoset composites. Cure monitoring with real-time defect detection during the process could determine when defects form and how they move. In addition, real-time defect detection during cure could assist validating physics-based process models for predicting defects at all stages of the cure cycle. A physics-based process model for predicting porosity and fiber waviness originating during cure is currently under development by the NASA Advanced Composites Project (ACP). For the design, an ultrasonic contact scanner is enclosed in an insulating box that is placed inside an oven during cure. Throughout the cure cycle, the box is nitrogen-cooled to approximately room temperature to maintain a standard operating environment for the scanner. The composite part is mounted on the outside of the box in a vacuum bag on the build/tool plate. The build plate is attached to the bottom surface of the box. The scanner inspects the composite panel through the build plate, tracking the movement of defects introduced during layup and searching for new defects that may form during cure. The focus of this paper is the evaluation and selection of the build plate material and thickness. The selection was based on the required operating temperature of the scanner, the cure temperature of the composite material, thermal conductivity models of the candidate build plates, and a series of ultrasonic attenuation tests. This analysis led to the determination that a 63.5 mm thick build plate of borosilicate glass would be utilized for the system. The borosilicate glass plate was selected as the build plate material due to the low ultrasonic attenuation it demonstrated, its ability to efficiently insulate the scanner while supporting an elevated temperature on the part side of the plate, and the availability of a 63.5 mm thick plate without the need for lamination.

Hudson, Tyler B.↗
DOE OSTI2026

Role of Wadsley Defects and Cation Disorder to Enhance MoNb 12 O 33 Diffusion

Wadsley-Roth (WR) niobates have emerged as high-rate anode materials that can combine rapid ionic diffusion with good electronic conductivity. WR compounds have been defect-enhanced by limited annealing, however, such materials often contain multiple types of defects. In particular, both Wadsley defects (variable block size) and transition metal disorder have the potential to modify transport rates, however the corresponding effects are not well understood mechanistically. Here, MoNb 12 O 33 (MNO) was calcined at two different temperatures to compare a defect-rich condition (MNO-800) with a proximal order-rich condition (MNO-900) as assessed through XRD, XANES, EXAFS, and STEM characterizations. Galvanostatically cycled lithium half cells of MNO-800 exhibited additional capacity (307 mAhg −1 at 0.1C, 4.66% higher) and improved high-rate capacity of 200 mAhg −1 at 10C. ICI-based overpotential analysis identified solid state diffusion as the dominant rate limiting process where MNO-800 correspondingly exhibited ∼3X faster capacity-weighted diffusivity. A machine-learning interatomic potential was trained to density functional theory and then applied with molecular dynamics (MLIP-MD) to examine the possible roles of Wadsley defects and transition metal disorder. For both defect-types, Li was found to populate and activate fast diffusion paths from window sites at lower extents of lithiation as compared to the order-rich model.

defect↗
DOE OSTI2025

Burst pressure models and validations for thick-walled pipelines containing corrosion defects

Corrosion is one major threat to pipeline integrity. Over the past decades, many corrosion models have been developed for determining the remaining strength of corroded pipelines, including ASME B31.G, Modified B31.G, LPC, PCORRC and their modified models. All these corrosion models are applicable only to large diameter, thin-walled pipelines with a diameter to wall thickness ratio D/t ≥ 20. In practice, many pipelines have a small diameter and thick wall with a D/t ratio < 20, and thus an adequate corrosion model is needed for assessing remaining strength for corroded thick-walled pipelines. This paper briefly reviews the theoretical burst pressure models for defect-free thin and thick-walled pipelines and four representative corrosion assessment models for thin-walled corroded pipelines. On this basis, two modified corrosion models are proposed to thick-walled pipelines in terms of the average shear stress yield theory. To verify the proposed corrosion models, comprehensive validations are performed. Numerical validations include the elastic-plastic finite element analysis to determine burst pressure for pipelines without and with corrosion defects and the model evaluation using a large dataset of available FEA results of burst pressure for machined defects. Experimental validations include a set of burst pressure tests for defect-free thick-walled pipes with different thicknesses and the model evaluation using one large burst dataset for machined defects with flat bottoms and another large dataset for real corrosion defects with curved river bottom profiles. Both numerical and experimental validations show that the proposed corrosion models can more accurately predict the remaining strength for corroded thin and thick-walled pipelines.

Pipeline↗
DOE OSTI2026

A foundation model for non-destructive defect identification from vibrational spectra

Defects are ubiquitous in solids and strongly influence materials’ functional properties. However, non-destructive characterization and quantification of defects, especially when multiple types coexist, remain a long-standing challenge. Here, we introduce DefectNet, a foundation machine learning model that predicts the chemical identity and concentration of substitutional point defects with multiple coexisting elements directly from vibrational spectra, specifically phonon density-of-states (PDoS). Trained on over 16,000 simulated spectra from 2,000 semiconductors, DefectNet employs a tailored attention mechanism to identify up to six distinct defect elements at concentrations ranging from 0.2% to 25%. The model generalizes well to unseen crystals across 56 elements and can be fine-tuned on experimental data. Validation using inelastic scattering measurements of SiGe alloys and MgB 2 superconductor demonstrates its accuracy and transferability. Furthermore, our work establishes vibrational spectroscopy as a viable, non-destructive probe for bulk point defect quantification, and highlights the promise of foundation models in data-driven defect engineering.

artificial intelligence↗
DOE OSTI2026

Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)

Germanium–tin (GeSn) alloys are emerging as promising materials for mid-infrared optoelectronics and silicon-compatible photonic devices, owing to their tunable direct bandgap. However, the growth of high-quality GeSn films with high Sn content remains challenging due to strain-induced defect formation. In this study, we investigate the role of film thickness on strain-induced relaxation, defect density, and Sn segregation. A series of five samples with varying thicknesses and ∼15% Sn-containing GeSn layers were grown, ranging from the critical thickness for strain relaxation to the onset of Sn segregation. All GeSn samples were analyzed using X-ray diffraction reciprocal space mapping (XRD-RSM) to explore the evolution of strain-induced relaxation as a function of thickness. Photoluminescence measurements reveal that increasing the GeSn thickness enhances strain relaxation while reducing defect-related emission, indicating a decrease in effective defect density prior to reaching the threshold thickness of GeSn layer. At a thickness of ∼150 nm, the GeSn layer shows the onset of Sn segregation, evident in the XRD-RSM spectrum, marking the threshold thickness for Sn segregation. This work defines an effective growth window in terms of thickness (35 to 150 nm) for fabricating relaxed, defect-suppressed GeSn layers with 15% Sn content. These findings emphasize the crucial role of thickness control in balancing strain relaxation and defect suppression, advancing the fabrication of high-quality, high Sn-content relaxed GeSn using molecular beam epitaxy.

Defects↗
DOE OSTI2026

Growth of Low-Defect WSe 2 Film via High-Purity van der Waals Crystal Precursor

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) exhibit exceptional electrical and optical properties, empowering their promising prospects for future nanoelectronics. Despite major advances in n-type 2D semiconductors, the field has yet to synthesize high-mobility p-type 2D TMDs, in particular WSe 2 , and systematically query the influence of defects. In this study, we unveil the pivotal role of substitutional impurity defects vis-à-vis the precursor used and growth method employed in defining the quality of 2D p-type WSe 2 . Density functional theory calculations suggest the adverse effect of Fe-, Co-, Ni- and Si-substituted W impurity defects on the mobility of WSe 2 , whereas defects such as O-, S-substituted Se and Mo-substituted W pose negligible impact. Guided by the theory, we pinpoint van der Waals (vdW) crystals, commonly used in mechanical exfoliation, as the optimal precursor, and develop a facile vdW crystal physical vapor deposition (PVD) method to grow high-purity monolayer 2D WSe 2 film (VPVD-WSe 2 ) that is continuous across a centimeter scale. A suite of spectroscopies confirms the markedly reduced defect density of the as-synthesized WSe 2 compared to those by typical chemical vapor deposition methods, and by PVD with commercial or hydrothermal precursors. Scanning tunneling microscopy further evidence the ultralow substitutional impurity defect density of VPVD-WSe 2 , greatly outperforming the control samples and approaching the mechanically exfoliated counterparts. The VPVD-WSe 2 based field-effect transistors exhibit notable electrical performance with record-high field-effect hole mobility up to 112 cm 2 V –1 s –1 at room temperature, exceeding the best-reported monolayer WSe 2 synthesized by chemical vapor deposition and rivaling the mechanically exfoliated 2D WSe 2 flakes.

WSe2↗
DOE OSTI2026

Mechanistic Insights into Defect-Mediated Crystallization Revealed by Lattice Strain Evolution

Structural defects and lattice strain are intrinsic to many crystalline materials, yet their roles in controlling chemical reaction mechanisms and directing crystallization pathways remain poorly understood. Here, in this study, we revealed the three-dimensional evolution of strain and dislocation defects at the nanoscale during the growth of heterogeneously nucleated barite (BaSO 4 ) and calcite (CaCO 3 ) crystals by using coherent X-ray scattering, electron microscopy, and molecular simulations. Unlike barite, which formed with minimal internal strain, calcite developed dislocation defects and exhibited spatially varying strain that increased during growth. During growth in Sr-rich solutions, calcite likely incorporates Sr 2+ into the defects, which further modulates the local lattice structure and increases both the compressive and tensile strain. These findings suggest that calcite crystallization was likely dominated by attachment of precursor phases, which gave rise to defect-enriched domain structures not predicted by classical growth models. By linking defect formation to ion incorporation and growth dynamics, this work provides fundamental insight into how lattice-level strain heterogeneity governs the chemical reactivity of ionic crystals.

Bragg coherent diffractive imaging↗
DOE OSTI2026

Node Distortions as a Means of Defect Engineering in Zr-Based MOFs

Defect engineering in Zr-based metal–organic frameworks (Zr-MOFs) has focused primarily on missing-linker defects. However, recent studies suggest that node dehydroxylation–which creates distortions and coordinatively unsaturated Zr sites (Zr cus )–may have a more significant impact on properties. The present work uses pair distribution function (PDF) and thermogravimetric analysis coupled with systematic defect manipulation to study the effect of node dehydroxylation and missing-linker defects in UiO-66. By employing rapid heat treatment (RHT) under humid flow, we tracked the transition from high-symmetry [Zr 6 O 4 (OH) 4 ] 12+ to distorted [Zr 6 O 6 ] 12+ nodes. This structural evolution significantly improves As(V) uptake, whereas increasing the number of missing linkers–via chemical treatment or RHT of mixed-ligand frameworks–fails to enhance performance. Crucially, our detection of distorted nodes in as-synthesized UiO-66 also raises the possibility that these defects were silently present in many earlier studies that span various applications, where their role in governing performance may have been inadvertently overlooked. The present study challenges the prevailing “missing-linker” paradigm and establishes cluster dehydroxylation as a defect-engineering strategy to enhance Lewis-acidic performance in Zr-MOFs.

Adsorption↗
DOE OSTI2026

Revealing the Hidden Third Dimension of Point Defects in Two-Dimensional MXenes

Point defects govern many important functional properties of two-dimensional (2D) materials. However, resolving the three-dimensional (3D) arrangement of these defects in multi-layer 2D materials remains a fundamental challenge, hindering rational defect engineering. Here, we overcome this limitation using an artificial intelligence-guided electron microscopy workflow to map the 3D topology and clustering of atomic vacancies in Ti3C2TX MXene. Our approach reconstructs the 3D coordinates of vacancies across hundreds of thousands of lattice sites, generating robust statistical insight into their distribution that can be correlated with specific synthesis pathways. This large-scale data enables us to classify a hierarchy of defect structures-from isolated vacancies to nanopores-revealing their preferred formation and interaction mechanisms, as corroborated by molecular dynamics simulations. This work provides a generalizable framework for understanding and ultimately controlling point defects across large volumes, paving the way for the rational design of defect-engineered functional 2D materials.

2D materials↗
NASA NTRS1997

Lithium-ion drifting: Application to the study of point defects in floating-zone silicon

The use of lithium-ion (Li(+)) drifting to study the properties of point defects in p-type Floating-Zone (FZ) silicon crystals is reported. The Li(+) drift technique is used to detect the presence of vacancy-related defects (D defects) in certain p-type FZ silicon crystals. SUPREM-IV modeling suggests that the silicon point defect diffusivities are considerably higher than those commonly accepted, but are in reasonable agreement with values recently proposed. These results demonstrate the utility of Li(+) drifting in the study of silicon point defect properties in p-type FZ crystals. Finally, a straightforward measurement of the Li(+) compensation depth is shown to yield estimates of the vacancy-related defect concentration in p-type FZ crystals.

Silicon↗