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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5

High-rate deposition of ultrathick bismuth films by direct-current magnetron sputtering

Bismuth coatings deposited at room temperature by physical vapor deposition typically feature irregularly-shaped grains and a high density of voids, thereby preventing their use in many potential applications. Here, we demonstrate the deposition of low-stress, high-density 40-μm-thick Bi films by systematically studying the effect of the deposition rate and substrate tilt on the properties of Bi films deposited at room temperature by direct-current magnetron sputtering. Furthermore, results show that, with increasing deposition rate, the morphology, structure, and properties of Bi films greatly improve, while an increase in substrate tilt leads to a monotonic decrease in film thickness, density, and electrical conductivity.

Bismuth↗

High performance mid-temperature selective absorber based on titanium oxides cermet deposited by direct current reactive sputtering of a single titanium target

This paper reports the design and fabrication of a new double cermet-based low-mid temperature solar selective absorber based on TiO x cermet layers, which were deposited with a single Ti target by varying O 2 partial pressure in sputtering chamber as reactive gas. High metal volume fraction cermet 1 and low metal volume fraction cermet 2 were deposited with O 2 partial pressure of 0.15 mTorr and 0.25 mTorr, respectively, with direct current power density of 6.58 W cm -2 . The complex refractive indices from ellipsometry were used to design solar selective absorber. The reflectance, thermal stability, and morphology were studied in absorbers on Cu and stainless steel. The effect of TiO 2 and SiO 2 as anti-reflective coating layers was investigated. Finally, the absorber on Cu substrate has high absorptance of 90.8% and low emittance of 4.9% (100 °C), and changed to 96.0% and 6.6%, respectively, after annealing at 300 °C for 4 days.

42 ENGINEERING↗

Optical gain in colloidal quantum dots achieved with direct-current electrical pumping

Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge—realization of lasing with electrical injection—remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here in this paper, we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, we apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ~18 A cm -2 without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm -2 we achieve the population inversion of the band-edge states.

36 MATERIALS SCIENCE↗

The direct-current response of electrically conducting fractures excited by a grounded current source

Hydraulic fracture stimulation of low permeability reservoir rocks is an established and cross–cutting technology for enhancing hydrocarbon production in sedimentary formations and increasing heat exchange in crystalline geothermal systems. Whereas the primary measure of success is the ability to keep the newly generated fractures sufficiently open, long–term reservoir management requires a knowledge of the spatial extent, morphology, and distribution of the fractures — knowledge primarily informed by microseismic and ground deformation monitoring. To minimize the uncertainty associated with interpreting such data, we investigate through numerical simulation the usefulness of direct-current (DC) resistivity data for characterizing subsurface fractures with elevated electrical conductivity by considering a geophysical experiment consisting of a grounded current source deployed in a steel cased borehole. In doing so, the casing efficiently energizes the fractures with steady current. Finite element simulations of this experiment for a horizontal well intersecting a small set of vertical fractures indicate that the fractures manifest electrically in (at least) two ways: (1) a local perturbation in electric potential proximal to the fracture set, with limited farfield expression and (2) an overall reduction in the electric potential along the borehole casing due to enhanced current flow through the fractures into the surrounding formation. The change in casing potential results in a measurable effect that can be observed far from fractures themselves. Under these conditions, our results suggest that farfield, timelapse measurements of DC potentials can be interpreted by simple, linear inversion for a Coulomb charge distribution along the borehole path, including a local charge perturbation due to the fractures. As a result, this approach offers an inexpensive method for detecting and monitoring the time-evolution of electrically conducting fractures while ultimately providing an estimate of their effective conductivity — the latter providing an important measure independent of seismic methods on fracture shape, size, and hydraulic connectivity.

30 DIRECT ENERGY CONVERSION↗

J-R Curve Determination for Disk-shaped Compact Specimens Based on the Normalization Method and Direct Current Potential Drop Technique

Material ductile fracture toughness can be described by J-integral versus crack extension relationship (J-R curve). As a conventional J-R curve measurement method, unloading compliance (UC) becomes impractical in elevated temperature testing due to relaxation of the material and a friction induced back-up shape of the J-R curve. In addition, the UC method may underpredict the crack extension for standard disk-shaped compact (DC(T)) specimens. In order to address these issues, the normalization method and direct current potential drop (DCPD) technique were applied for determining J-R curves at 24 C and 500 C for 0.18T DC(T) specimens made from type 316L stainless steel. For comparison purchase, the UC method was also applied in 24 C tests. The normalization method was able to yield valid J-R curves in all tests. The J-R curves from the DCPD technique need adjustment to account for the potential drop induced by plastic deformation, crack blunting, etc. and after applying a newly-developed DCPD adjustment procedure, the post-adjusted DCPD J-R curves essentially matched J-R curves from the normalization method. In contrast, the UC method underpredicted the crack extension in all tests resulting in substantial deviation in the derived J-R curves manifested by high Jq values than the normalization or DCPD method. Only for tests where the UC method underpredicted the crack extension by a very small value, J-R curves determined by the UC method were similar to those determined by the normalization or DCPD method.

DCPD↗

Percolative nature of the direct-current paraconductivity in cuprate superconductors

Abstract Despite extraordinary scientific efforts over the past three decades, the cuprate high-temperature superconductors continue to pose formidable challenges. A pivotal problem, essential for understanding both the normal and superconducting states, is to clarify the nature of the superconducting pre-pairing above the bulk transition temperature T c . Different experimental probes have given conflicting results, in part due to difficulties in discerning the superconducting response from the complex normal-state behavior. Moreover, it has proven challenging to separate common properties of the cuprates from compound-specific idiosyncrasies. Here we investigate the paraconductivity—the superconducting contribution to the direct-current (dc) conductivity—of the simple-tetragonal model cuprate material HgBa 2 CuO 4+ δ . We are able to separate the superconducting and normal-state responses by taking advantage of the Fermi-liquid nature of the normal state in underdoped HgBa 2 CuO 4+ δ ; the robust and simple quadratic temperature-dependence of the normal-state resistivity enables us to extract the paraconductivity above the macroscopic T c with great accuracy. We find that the paraconductivity exhibits unusual exponential temperature dependence, and that it can be quantitatively explained by a simple superconducting percolation model. Consequently, the emergence of superconductivity in this model system is dominated by the underlying intrinsic gap inhomogeneity. Motivated by these insights, we reanalyze published results for two other cuprates and find exponential behavior as well, with nearly the same characteristic temperature scale. The universal intrinsic gap inhomogeneity is not only essential for understanding the supercoducting precursor, but will also have to be taken into account in the analysis of other bulk measurements of the cuprates.

Popčević, Petar↗

Self-deformation in a direct current driven helium jet micro discharge

We report on the experimental observation of three dimensional self-deformation in an atmospheric micro discharge of the helium microjet through a tube into the ambient air upon a water electrode. The geometry of the discharge system is axial symmetric. While decreasing the discharge current, three dimensional collective motion of plasma filaments is directly observed. The three dimensional configuration of the discharge self changed from an axial symmetrical horn to a rectangular horn when the water acts as a cathode.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction

Capacitance nonlinearities were studied in atomic layer deposited HfO{sub 2} films using two types of signals: a pure ac voltage of large magnitude (ac nonlinearities) and a small ac voltage superimposed to a large dc voltage (dc nonlinearities). In theory, ac and dc nonlinearities should be of the same order of magnitude. However, in practice, ac nonlinearities are found to be an order of magnitude higher than dc nonlinearities. Besides capacitance nonlinearities, hopping conduction is studied using low-frequency impedance measurements and is discussed through the correlated barrier hopping model. The link between hopping and nonlinearity is established. The ac nonlinearities are ascribed to the polarization of isolated defect pairs, while dc nonlinearities are attributed to electrode polarization which originates from defect percolation paths. Both the ac and dc capacitance nonlinearities display an exponential variation with voltage, which results from field-induced lowering of the hopping barrier energy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Direct current injection and thermocapillary flow for purification of aligned arrays of single-walled carbon nanotubes

Aligned arrays of semiconducting single-walled carbon nanotubes (s-SWNTs) represent ideal configurations for use of this class of material in high performance electronics. Development of means for removing the metallic SWNTs (m-SWNTs) in as-grown arrays represents an essential challenge. Here, we introduce a simple scheme that achieves this type of purification using direct, selective current injection through interdigitated electrodes into the m-SWNTs, to allow their complete removal using processes of thermocapillarity and dry etching. Experiments and numerical simulations establish the fundamental aspects that lead to selectivity in this process, thereby setting design rules for optimization. Single-step purification of arrays that include thousands of SWNTs demonstrates the effectiveness and simplicity of the procedures. The result is a practical route to large-area aligned arrays of purely s-SWNTs with low-cost experimental setups.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Comparison of direct current and 50 Hz alternating current microscopic corona characteristics on conductors

Corona discharge is one of the major design factors for extra-high voltage and ultra-high voltage DC/AC transmission lines. Under different voltages, corona discharge reveals different characteristics. This paper aims at investigating DC and AC coronas on the microscopic scale. To obtain the specific characteristics of DC and AC coronas, a new measurement approach that utilizes a coaxial wire-cylinder corona cage is designed in this paper, and wires of different diameters are used in the experiment. Based on the measurements, the respective microscopic characteristics of DC and AC coronas are analyzed and compared. With differences in characteristics between DC and AC coronas proposed, this study provides useful insights into DC/AC corona discharges on transmission line applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

The physical nature of the phenomenon of positive column plasma constriction in low-pressure noble gas direct current discharges

The essence of the positive-column plasma constriction for static (the diffusion mode) and dynamic ionization equilibrium (the stratificated and constricted modes) is analyzed. Two physical parameters, namely, the effective ionization rate of gas atoms and the ambipolar diffusion coefficient of electrons and ions, determine the transverse distribution of discharge species and affect the current states of plasma. Transverse constriction of the positive column takes place as the gas ionization level (discharge current) and pressure increase. The stratified mode (including the constricted one) is observed between the two adjacent types of self-sustained discharge phases when they coexist together at the same time or in the same place as a coherent binary mixture. In the case, a occurrence of the discharge phase with more high electron density presently involve a great decrease in the cross-section of the current channel for d.c. discharges. Additional physical factors, such as cataphoresis and electrophoresis phenomena and spatial gas density inhomogeneity correlated with a circulatory flow in d.c. discharges, are mainly responsible for the current hysteresis and partially constricted discharge.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Phenomena of oscillations in atmospheric pressure direct current glow discharges

Self-sustained oscillations in a dc glow discharge with a semiconductor layer at atmospheric pressure were investigated by means of a one-dimensional fluid model. It is found that the dc glow discharge initially becomes unstable in the subnormal glow region and gives rise to oscillations of plasma parameters. A variety of oscillations with one or more frequencies have been observed under different conditions. The discharge oscillates between the glow discharge mode and the Townsend discharge mode in the oscillations with large amplitude while operates in the subnormal glow discharge mode all the while in the oscillations with small amplitude. Fourier Transform spectra of oscillations reveal the transition mechanism between different oscillations. The effects of semiconductor conductivity on the oscillation frequency of the dominant mode, gas voltage, as well as the discharge current have also been analyzed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Direct current response of a thin scCVD diamond detector under increased applied field to 14.1 MeV neutrons

An avalanche effect yielding inherent gain can be exploited in thin, single-crystal chemical vapor deposition (scCVD) diamond. It occurs when a high enough bias is applied across the diamond thickness while avoiding breakdown. This charge multiplication effect was studied previously with alpha particles and heavy ions either by using the transient current technique or by measuring the energy spectrum. The measurements we obtained to evaluate the charge multiplication performance of a 10 μm thick scCVD diamond detector used a novel approach—we employed an electrometer to characterize the response of the detector by performing directly coupled current measurements (time-averaged charge, at 1 Hz sampling) when exposed to 14.1 MeV neutrons from deuterium-tritium fusion. We measured both the dark and irradiated currents from the detector over a range of applied displacement field values from 2 to 75 V/μm. A histogram method with central mean and standard deviation width was used to determine the current over each measurement duration typically from 100 to 300 seconds. The dark-subtracted irradiated current (i.e., contrast) was used to evaluate the gain of the detector at each applied displacement field. The contrast at an applied displacement field between 15 and 20 V/μm was higher than the expected linear increase in contrast proportional to the increased applied bias, indicating the possible presence of avalanche events in the diamond. The detector response also indicated possible polarization and charge depletion effects. These results provide an opportunity to further explore the use of thin scCVD diamond as a fast neutron current mode detector with inherent gain.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

First-cut design of an all-superconducting 100-T direct current magnet

A 100-T magnetic field has heretofore been available only in pulse mode. This first-cut design demonstrates that a 100-T DC magnet (100 T) is possible. We base our design on: Gadolinium-based coated superconductor; a nested-coil formation, each a stack of double-pancake coils with the no-insulation technique; a band of high-strength steel over each coil; and a 12-T radial-field limit. The 100 T, a 20 mm cold bore, 6-m diameter, 17-m height, with a total of 12 500-km long superconductor, stores an energy of 122 GJ at its 4.2-K operating current of 2400 A. It requires a 4.2-K cooling power of 300 W.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities

The mechanism of the light-flux decrease in light-emitting diodes based on AlGaN/InGaN/GaN heterostructures with quantum holes is determined. The light-flux decrease is associated with point-defect generation in the heterostructure active region due to interaction of the semiconductor lattice with hot carriers formed in the mode of deviation of the current–voltage characteristic from the exponential one. An analytical expression for the light-flux decrease upon prolonged current flow, which is confirmed by experimental results, is derived. It is shown that the behavior of the dependence of the light flux on the lifetime is strongly affected by the nonuniform distribution of indium in quantum wells.

36 MATERIALS SCIENCE↗

Active electron energy distribution function control in direct current discharge using an auxiliary electrode

The electron energy distribution functions are studied in the low voltage dc discharge with a constriction, which is a diaphragm with an opening. The dc discharge glows in helium and is sustained by the electron current emitted from a heated cathode. We performed kinetic simulations of dc discharge characteristics and electron energy distribution functions for different gas pressures (0.8 Torr-4 Torr) and discharge current of 0.1 A. The results of these simulations indicate the ability to control the shape of the electron energy distribution functions by variation of the diaphragm opening radius.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions

Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at the metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗