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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Low fractional volume superconductivity in single crystals of Pr{sub 4}Ni{sub 3}O{sub 10} under pressure

Magnetotransport measurements of P⁢r4⁢N⁢i3⁢O10 single crystals performed under externally applied pressures up to 73 GPa in diamond anvil cells with either KBr or Nujol oil as pressure media yield signatures of superconductivity with a maximum onset temperature of approximately 31 K. True zero resistance was not observed, consistent with a nonpercolating superconducting volume fraction. Magnetization measurements provided corroborating evidence of superconductivity, with a pressure-dependent diamagnetic signal occurring below the onset temperature, and an estimate from the absolute value of the susceptibility suggests a superconducting volume fraction on the order of 10%. We observe sample to sample variations in the magnitude and pressure dependence of 𝑇𝑐 as well as a dependence on the configuration of electrical contacts on a given sample. Possible causes of this behavior may be significant inhomogeneities in the pressure and/or damage to the samples induced by the pressure media as well as inhomogeneities in the crystals themselves. The results imply that our as-grown P⁢r4⁢N⁢i3⁢O10 single crystals are not bulk superconductors but that there is a minority structure present within the crystals that is indeed superconductin

Chen, Xinglong↗
NASA NTRS1979

Wraparound-contact solar cells

Positive and negative electrical contacts are on back surface of wraparound-contact solar cell. With both terminals on nonilluminated side, cells can be connected back-to-back, and interconnection of many cells can be automated by using printed-circuit techniques. Cells are made by screen-printing layer of dielectric around edge of cell and extending top contact over dielectric to back surface. Wraparound also facilitates application of transparent covers and encapsulants. Efficiencies of cells are in excess of seventeen percent.

Baraona, C. R.↗
NASA NTRS1965

Cu-Cd and Ag-Cd cermet contacts

Method for preparing copper-cadmium and silver- cadmium cermet alloys without cadmium loss - evaluation of breaking electric contacts and collector plates

COLLECTOR↗
NASA NTRS2021

Thermoelectric System Economics - The Apex: New Paradigms in Manufacturing and Interface Performance Relationships Driving System Cost Optimizations

Thermoelectric energy recovery systems require cost-optimized designs with high thermal and thermoelectric (TE) performance to surmount common commercialization barriers controlling the acceptance of thermoelectric generator (TEG) systems. Recent work has addressed this requirement with new analytic tools and paradigms that allow integrated TEG cost-performance analysis and optimization. New work herein has identified the existence of optimized TE element design (i.e., TE element length) for minimizing TEG cost and provides design guidelines associated with critical thermal and electrical contact resistance effects and TE manufacturing sensitivities. Once optimum hot-side heat flux criteria are satisfied, this work highlights the tradeoffs between interface resistance effects and manufacturing cost effects in determining optimum-cost TE element lengths, and then quantifies the increase in optimum-cost TE lengths as manufacturing costs become more sensitive to TE element lengths. Optimized TE element design criteria and key non-dimensional design parameters (i.e., [𝐶′′′LTE/𝐶′′], [TE/con], [con/(TE,aveLTE)]) driving the design are presented and explained showing the interdependencies between manufacturing cost parameters and thermal and electrical interface impacts on integrated TE cost-performance analysis and design. Comprehensive TEG system cost-performance relationships clearly demonstrate the two parameters that most greatly impact the TEG system cost are heat exchanger costs ($/(W/K)) and TE hot side heat flux. Reducing heat exhanger cost from $1/(W/K) to $0.5/(W/K) can decrease TEG system cost by $2/W to $4/W depending on TE hot side heat fluxes from 4-10 W/cm2. The impact of TE hot side heat flux on TEG system cost is larger; reducing TE system cost by factors of 2-4 as TE hot side heat flux increases from 4 W/cm2 to high levels around 18 W/cm2. The levels of thermal contact resistance and electrical contact resistance required to even approach the critical TEG system cost level of $1/W are characterized by con = 1.0 x 10-10 -m2 and r = 0.1, respectively. This not only lowers TEG costs, but it also makes the TEG system costs less sensitive to TE manufacturing dependences on TE element length. New design paradigms and relationships create holistic, integrated TE performance-cost models that enhance understanding of crucial interrelationships between component costs, TE design parameters and material properties, heat exchanger design parameters, interfacial heat flux, and now thermal and electrical interface effects in minimizing TEG system costs.

Hendricks, Terry J.↗
NASA NTRS1985

Electrically Connecting to Pressure Vessels

Resilient conductive disk eliminates need for holes in vessel walls. Grounding disk made from wire and solder and sandwiched between electrical-component support and pressure-vessel wall. Emplaced in component support, disk squeezed to 66 percent of its thickness. Disk conforms to surfaces of support and vessel wall when support attached to wall with adhesive. Disk thus forms reliable electrical contact from support (and its electrical component) to wall.

Rossi, P. J.↗
NASA NTRS2011

Optimization of Indium Bump Morphology for Improved Flip Chip Devices

Flip-chip hybridization, also known as bump bonding, is a packaging technique for microelectronic devices that directly connects an active element or detector to a substrate readout face-to-face, eliminating the need for wire bonding. In order to make conductive links between the two parts, a solder material is used between the bond pads on each side. Solder bumps, composed of indium metal, are typically deposited by thermal evaporation onto the active regions of the device and substrate. While indium bump technology has been a part of the electronic interconnect process field for many years and has been extensively employed in the infrared imager industry, obtaining a reliable, high-yield process for high-density patterns of bumps can be quite difficult. Under the right conditions, a moderate hydrogen plasma exposure can raise the temperature of the indium bump to the point where it can flow. This flow can result in a desirable shape where indium will efficiently wet the metal contact pad to provide good electrical contact to the underlying readout or imager circuit. However, it is extremely important to carefully control this process as the intensity of the hydrogen plasma treatment dramatically affects the indium bump morphology. To ensure the fine-tuning of this reflow process, it is necessary to have realtime feedback on the status of the bumps. With an appropriately placed viewport in a plasma chamber, one can image a small field (a square of approximately 5 millimeters on each side) of the bumps (10-20 microns in size) during the hydrogen plasma reflow process. By monitoring the shape of the bumps in real time using a video camera mounted to a telescoping 12 magnifying zoom lens and associated optical elements, an engineer can precisely determine when the reflow of the bumps has occurred, and can shut off the plasma before evaporation or de-wetting takes place.

Jones, Todd J.↗
NASA NTRS1985

Eutectic Contact Inks for Solar Cells

Low-resistance electrical contacts formed on solar cells by melting powders of eutectic composition of semiconductor and dopant. Process improves cell performance without subjecting cell to processing temperatures high enough to degrade other characteristics.

Ross, B.↗
NASA NTRS1984

Magnetron Sputtered Gold Contacts on N-gaas

Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

Buonaquisti, A. D.↗
NASA NTRS1980

High efficiency wraparound contact solar cells /HEWACS/

A cell technology, producing high efficiency wrap-around contact solar cells (HEWACS), with both electrical contacts on the back and AMO conversion efficiencies of almost 15%, is presented. A flow chart indicating the baseline process sequence along with the process changes is given. Tests checking for coating delamination and contact integrity, those measuring contact strength, and thermal cycle tests, successfully demonstrated that this cell technology is ready to be moved to the pilot production stage.

Gillanders, M.↗
NASA NTRS1991

Measuring Electrical Resistivity Of Compacted Powder

Slightly modified micrometer used in conjunction with special cup to measure electrical resistance of specimen of powder as function of packing fraction. Powder pressed between anvils of micrometer, which make electrical contact with specimen. Device used in manufacturing batteries to determine effective electrical conductivities of powders loaded into plastic sheets to make battery substrates. Coupled with good mathematical description of expected conductivity of particulate composite as function of packing density. Also serves as tool for evaluating conductivity of dispersed phase, as well as evaluating electrical resistances of interparticle contacts.

Shlichta, Paul J.↗