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DOE OSTI2025

Quantifying dislocation-type defects in post irradiation examination via transfer learning

The quantitative analysis of dislocation-type defects in irradiated materials is critical to materials characterization in the nuclear energy industry. The conventional approach of an instrument scientist manually identifying any dislocation defects is both time-consuming and subjective, thereby potentially introducing inconsistencies in the quantification. This work approaches dislocation-type defect identification and segmentation using a standard open-source computer vision model, YOLO11, that leverages transfer learning to create a highly effective dislocation defect quantification tool while using only a minimal number of annotated micrographs for training. This model demonstrates the ability to segment both dislocation lines and loops concurrently in micrographs with high pixel noise levels and on two alloys not represented in the training set. Inference of dislocation defects using transmission electron microscopy on three different irradiated alloys relevant to the nuclear energy industry are examined in this work with widely varying pixel noise levels and with completely unrelated composition and dislocation formations for practical post irradiation examination analysis. Code and models are available at https://github.com/idaholab/PANDA.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Understanding grain refinement and intergranular gas bubble evolution in U-10Mo fuel using phase-field modeling

Monolithic U-10Mo fuel undergoes significant microstructural changes in the form of grain refinement and gas bubble formation during burnup, which degrades its mechanical properties. In this talk, I present a phase-field model for microstructure evolution in U-10Mo developed using the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework. Simulations demonstrate that grain refinement initiates at pre-existing grain boundaries (GBs) to eliminate the lattice distortion energy caused by the accumulation of self-interstitial loops. By employing an equation of state for xenon gas, we simulate the evolution of gas bubbles in the polycrystal microstructure. Large, interconnected bubbles are found to form along the triple junctions. The effects of defect production rate, diffusivities and GB mobility on the microstructure evolution are systematically studied. Homogenization is employed on the microstructures to obtain effective elastic constants and diffusivity as a function of fission density. The simulations provide critical insights on microstructure and property degradation in U-10Mo fuel.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2023

Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability

To this day, trapezoidal defects are found in clusters and high counts in wafers representing the industry standard in terms of material quality being produced. This study sheds light on the nature, origin, behavior, and impact of this defect on device yield and reliability. Trapezoidal defects in 4H-SiC epitaxial layers were investigated by photoluminescence (PL) imaging, scanning electron microscopy (SEM), cathodoluminescence spectrum imaging (CLSI), SEM electron beam induced current (EBIC) imaging, and by transmission electron microscopy (TEM) observation. The bar-shaped stacking faults were identified by the PL and CL measurements with a peak emission wavelength of 420 and 450 nm. An optoelectronic behavioral study based on the recombination enhanced dislocation glide mechanism revealed how expanding dislocations and stacking faults interact with each other. Combining the luminescence and microscopy results, the nature of the stacking faults was identified as being a combination of Shockley-type and Frank-type stacking faults. The TEM analysis showed that these defects originate from the substrate and the stacking sequences of some of the faults were determined as (…2, 4, 2…) and (…2, 3, 2…) in the Zhdanov's notation by high-resolution TEM. The origin of this defect is speculated based on our results and previous reports. The EBIC imaging showed that the high density of SFs in these towers is a strong site of carrier recombination, which presumably has an impact on the transfer characteristics of SiC devices. Furthermore, these defects have shown to impact metal oxide semiconductor field effect transistors electrical performance via an increase in the on-state resistance depending on the coverage percentage of the tower of defects in the active area of the device.

4H-SiC↗

DOE OSTI2020

Sample spinning to mitigate polarization artifact and interstitial-vacancy imbalance in ion-beam irradiation

Accelerator-based ion-beam irradiation has been widely used to mimic the effects of neutron radiation damage in nuclear reactors. However, ion radiation is most often monodisperse in the incoming ions’ momentum direction, leading to excessive polarization in defect distribution, while the scattering under neutron irradiation is often more isotropic and has less radiation-induced polarization. Mitigation of the excess-polarization as well as the damage non-uniformity artifact might be crucial for making the simulation of neutron radiation by ion-beam radiation more realistic. In this work, a general radiation polarization theory in treating radiation as external polar stimuli is established to understand the natural material responses in different contexts, and the possibility to correct the defect polarization artifact in ion-beam irradiation. Inspired by Magic Angle Spinning in Nuclear Magnetic Resonance, we present a precise sample spinning strategy to reduce the point-defect imbalance effect in ion-beam irradiation. It can be seen that with optimized surface inclination angle and the axis of sample rotation, the vacancy-interstitial population imbalance, as well as the damage profile non-uniformity in a designated region in the target are both reduced. It is estimated that sample spinning frequency on the order of kHz should be sufficient to scramble the ion momentum monodispersity for commonly taken ion fluxes and dose rates, which is experimentally feasible.

36 MATERIALS SCIENCE↗

DOE OSTI2022

The effect of Cr alloying on defect migration at Ni grain boundaries

Mass transport along grain boundaries in alloys depends not only on the atomic structure of the boundary, but also its chemical make-up. In this work, we use molecular dynamics to examine the effect of Cr alloying on interstitial and vacancy-mediated transport at a variety of grain boundaries in Ni. We find that, in general, Cr tends to reduce the rate of mass transport, an effect which is greatest for interstitials at pure tilt boundaries. However, there are special scenarios in which it can greatly enhance atomic mobility. Cr tends to migrate faster than Ni, though again this depends on the structure of the grain boundary. Further, grain boundary mobility, which is sometimes pronounced for pure Ni grain boundaries, is eliminated on the time scales of our simulations when Cr is present. We conclude that the enhanced transport and grain boundary mobility often seen in this system in experimental studies is the result of non-equilibrium effects and is not intrinsic to the alloyed grain boundary. These results provide new insight into the role of grain boundary alloying on transport that can help in the interpretation of experimental results and the development of predictive models of materials evolution.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Defect-induced displacement of topological surface state in quantum magnet MnBi2Te4

The topological magnet MnBi2⁢Te4 (MBT), with gapped topological surface state, is an attractive platform for realizing quantum anomalous Hall and axion insulator states. However, the experimentally observed surface state gaps fail to meet theoretical predictions, although the exact mechanism behind the gap suppression has been debated. Recent theoretical studies suggest that intrinsic antisite defects push the topological surface state away from the MBT surface, closing its gap and making it less accessible to scanning probe experiments. Here, we report on the local effect of defects on the MBT surface states and demonstrate that high defect concentrations lead to a displacement of the surface states well into the MBT crystal, validating the theorized mechanism. The local and global influence of antisite defects on the topological surface states are studied with samples of varying defect densities by combining scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and density functional theory. Our findings identify a combination of increased defect density and reduced defect spacing as the primary factors underlying the displacement of the surface states and suppression of surface gap, guiding further development of topological quantum materials.

Lupke, Felix [Carnegie Mellon University (CMU)]↗

DOE OSTI2020

New approaches for achieving more perfect transition metal oxide thin films

This perspective considers the enormous promise of epitaxial functional transition metal oxide thin films for future applications in low power electronic and energy applications since they offer wide-ranging and highly tunable functionalities and multifunctionalities, unrivaled among other classes of materials. It also considers the great challenges that must be overcome for transition metal oxide thin films to meet what is needed in the application domain. These challenges arise from the presence of intrinsic defects and strain effects, which lead to extrinsic defects. Current conventional thin film deposition routes often cannot deliver the required perfection and performance. Since there is a strong link between the physical properties, defects and strain, routes to achieving more perfect materials need to be studied. Several emerging methods and modifications of current methods are presented and discussed. The reasons these methods better address the perfection challenge are considered and evaluated.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Influence of defect characteristics on tensile deformation of an additively manufactured stainless steel: Evolutions of texture and intergranular strain

The micromechanics of plastic deformation behavior of a selective laser melt processed austenitic stainless steel were studied by investigating the evolutions of texture and intergranular strain using in situ high-energy synchrotron x-ray diffraction (sXRD). The effects of defect characteristics on tensile behavior were studied using three different samples: a near full-density sample with elliptical closed voids and two samples with lack-of-fusion (LOF) defects tensile loaded either perpendicular or parallel to their major axes. The evolutions of pole figures and inverse pole figures show that the full-density specimen develops a strong (111)/(200) fiber texture along the loading direction. For both LOF specimens, the evolution of texture is qualitatively similar to the full-density counterpart, but the development of the fiber texture was much slower, indicating a limited plasticity at a given macroscopic strain. The intergranular strain evolution in the full-density specimen is similar to that of a wrought 316L stainless steel. Conversely, a significantly different intergranular strain development was observed in a LOF specimen, where tensile strain development was observed in both the axial and transverse directions. Finally, the influence of defect type, density, and orientation on the local stress states in the steel matrix and the evolutions of intergranular strains is discussed.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Realignment and suppression of charge density waves in the rare-earth tritellurides 𝑅⁢Te 3 (𝑅 = La, Gd, Er)

The rare-earth tritellurides have a rich phase diagram that includes charge density waves (CDWs), superconductivity, and magnetic order, offering a platform to study the interplay between these phases on a square-net system. Prior studies have shown that defects can affect the CDW characteristics in these materials, yet coupling between the CDW order and the underlying microstructure has not been studied at the nanoscale. Here we use scanning transmission electron microscopy at cryogenic temperatures to directly visualize the effects of defects on the CDW order and provide a spatially resolved microscopic correlation between the CDW transition and structural defects. Here, we show that in the presence of extended defects, such as dislocations and stacking faults, the weak orthorhombicity of the rare-earth tritellurides is lost and the material becomes pseudotetragonal. Since the orthorhombicity acts as a symmetry breaking field for the CDW transitions in rare-earth tritellurides, the presence of these extended defects modulates the energetics of the CDWs and suppresses the ground-state CDW phase at low temperature.

Charge density waves↗

DOE OSTI2024

Surface-Defect-Passivation-Enabled Near-Unity Charge Collection Efficiency in Bromide-Based Perovskite Gamma-Ray Spectrum Devices

Hybrid lead halide perovskites have superior charge transport properties to all-inorganic perovskites, but high-resolution spectroscopic radiation detectors have not been realized. Here we show that surface deep traps severely limit charge collection in formamidinium lead bromide (FAPbBr3) single-crystal devices, despite having a good bulk transport property. Three types of defect on the crystal surface, namely, FA vacancies, uncoordinated lead and Pb-Pb dimers caused by bromide loss, are found to form deep traps, resulting in non-radiative charge recombinations at the metal/perovskite interface. By tailoring the passivation functional groups, we find that ammonium bromide can passivate all these three deep traps on FAPbBr3 surfaces, improving the charge collection efficiency to near unity. The comparable bulk and surface recombination lifetimes indicate that all the surface defects are effectively passivated. Surface passivation also reduces the dark current by 10 times and decreases the dark counts by ~60 times. The energy resolution of the 137Cs spectra acquired using the FAPbBr3 detectors is improved from 5.7% to 1.7% when all the surface defects are passivated without changing the bulk properties, which is the best among solution-grown semiconductor detectors. Surface passivation is stable for more than six months, and FAPbBr3 spectroscopic detectors can operate at unprecedented high temperatures of more than 130 degrees C.

gamma ray↗

DOE OSTI2025

The role of excess vacancies in stabilizing solute clusters in low-alloy steels

The formation of solute clusters in irradiated low-alloy steels, such as reactor pressure vessel steels, is a critical cause of radiation hardening and embrittlement. However, the chemical interactions among solute elements and excess vacancies remain to be fully understood. This study employs density functional theory, cluster expansion, and lattice-based Monte Carlo simulations to examine the stability and morphology of nano-size coherent solute clusters with excess vacancies. The findings reveal that excess vacancies are crucial in stabilizing and promoting the growth of Mn-Ni-Si-vacancy clusters. A minimum of seven vacancies is required for stable nucleation and growth of these clusters. These Mn-Ni-Si clusters act as defect sinks, effectively trapping and absorbing mobile vacancies generated under irradiation. Furthermore, phosphorus (P) preferentially dissolves in Mn-Ni-Si clusters due to chemical coupling with vacancies. In conclusion, this study offers new insights into solute-vacancy interactions, enhancing our understanding of solute-defect cluster formation and embrittlement in low-alloy steels.

36 - MATERIALS SCIENCE↗

DOE OSTI2021

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.

42 ENGINEERING↗

DOE OSTI2021

High Thermoelectric Performance through Crystal Symmetry Enhancement in Triply Doped Diamondoid Compound Cu 2 SnSe 3

The presence of high crystallographic symmetry and nanoscale defects are favorable for thermoelectrics. With proper electronic structures, a highly symmetric crystal tends to possess multiple carrier channels and promote electrical conductivity without sacrificing Seebeck coefficient. In addition, nanoscale defects can effectively scatter acoustic phonons to suppress thermal conductivity. Here, we report that the triple doping of Cu 2 SnSe 3 leads to a high ZT value of 1.6 at 823 K for Cu 1.85 Ag 0.15 (Sn 0.88 Ga 0.1 Na 0.02 )Se 3 , and a decent average ZT (ZT ave ) value of 0.7 is also achieved for Cu 1.85 Ag 0.15 (Sn 0.93 Mg 0.06 Na 0.01 )Se 3 from 475 to 823 K. Our study reveals: (1) Ag doping on Cu sites generates numerous point defects and greatly decreases lattice thermal conductivity. (2) Doping Mg or Ga converts the monoclinic Cu 2 SnSe 3 into a cubic structure. This symmetry enhancing leads to increase in the effective mass from 0.8 m e to 2.6 m e (m e , free electron mass) and the power factor from 4.3 μW/cm –1 K –2 for Cu 2 SnSe 3 to 11.6 μW/cm –1 K –2 . (3) Na doping creates dense dislocation arrays and nanoprecipitates, which strengthens the phonon scattering. (4) Pair distribution function analysis shows localized symmetry breakdwon in the cubic Cu 1.85 Ag 0.15 (Sn 0.88 Ga 0.1 Na 0.02 )Se 3 . Furthermore, the present work provides a standpoint to design promising thermoelectric materials by synergistically manipulating crystal symmetry and nanoscale defects.

36 MATERIALS SCIENCE↗

DOE OSTI2024

DOC-DICAM: Domain Aware One Class Defect Identification in Composite Aerostructure Material

Fiber-reinforced composites are a common material used in the design of aircraft structures due to their good tensile strength and resistance to compression. During the manufacturing process, these structures are thoroughly inspected for flaws and defects to ensure structural integrity during commercial use. Non-destructive testing (NDT) is a collection of inspection methods that allow inspectors to evaluate material without altering it. Due to the high safety standards in aerospace manufacturing, the NDT process is done manually and can be a significant bottleneck in the development workflow. In this paper, we develop an AI-based assistance tool to drastically reduce inspection time. Typical AI workflows require large amounts of annotated data, but defects rarely occur resulting in strong class imbalance. To overcome this, we formulate the problem of defect identification as an anomaly detection task in which our primary focus is learning non-defect characteristics. To do this, we develop a multi-task self-supervised learning framework that embeds problem specific domain knowledge into the deep learning model. We verify our method using fuselage data generated in a production environment. As a result, we show that our method can effectively identify defects and requires minimal training and inference time.

anomaly detection↗

DOE OSTI2021

Stochastic microstructural analysis of ceramic matrix composites using a high-fidelity multiscale framework

This paper presents a high-fidelity multiscale framework to simulate the mechanical behavior of ceramic matrix composites (CMCs), accounting for the complex micromorphology captured using detailed material characterization. First, high-resolution micrographs are obtained for the specific carbon fiber silicon-carbide-nitride matrix (C/SiNC) CMC to characterize the variability of the architectural features and manufacturing-induced defects at the microscale. An image processing algorithm is then used to precisely estimate the size and distribution of all subscale features and defects from the micrographs. The information is then used to generate a three-dimensional stochastic representative volume element (SRVE) to reconstruct microscale constituents accounting for the variability. As a result, the generated SRVEs are simulated using the high-fidelity generalized method of cells (HFGMC) micromechanics theory to investigate the effects of defects on the elastic properties of C/SiNC CMCs.

Ceramic Matrix Composites↗

DOE OSTI2022

Band gap and electronic structure of defects in the ternary nitride BP 3 N 6 : experiment and theory

Recent advances in methods to access nitride systems by a high-pressure high-temperature approach have made possible the one-step synthesis of mixed ternary non-metal nitrides. As a prerequisite to use in a practical device, it is important to understand important bulk electronic properties, such as the band gap, as well as characterizing the presence and effect of defects that are present. In this work, the novel ternary nitride BP 3 N 6 is studied using techniques sensitive to the partial electronic density of states, specifically X-ray absorption spectroscopy and X-ray emission spectroscopy. Complementary full-potential all-electron density functional theory (DFT) calculations allow important bulk electronic parameters, such as the band gap, to be elucidated. The band gap of BP 3 N 6 has been determined to be 3.9 ± 0.2 eV and 4.1 ± 0.4 eV at the B K- and N K-edges, respectively. This is close to a theoretical value of 4.3 eV predicted by the PBEsol exchange–correlation functional and considerably less than a value of 5.8 eV predicted by the modified Becke–Johnson exchange–correlation functional. X-Ray excited optical luminescence (XEOL) measurements are performed to interrogate the presence of point defects in this system. Together with DFT calculations, these measurements reveal the presence of nitrogen vacancies which lead to multiple mid-gap trap states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Role of chemical disorder on radiation-induced defect production and damage evolution in NiFeCoCr

Understanding chemical disorder in many concentrated solid solution alloys (CSAs) at the levels of electrons and atoms has attracted increasing attention as a path forward to reveal and identify underlying mechanisms for extraordinary mechanical properties and improved radiation tolerance. Single-phase NiFeCoCr CSA is a common base for many high-entropy alloys (HEAs) that have shown improved mechanical strength and radiation tolerance. In this study, defect production and damage evolution in NiFeCoCr under ion irradiation at room temperature to dose over 20 dpa are determined using ion channeling technique along both <100> and <110> directions utilizing multiple probing beam energies. The results obtained from the multi-axial and multi-energy channeling analysis are compared with those previously obtained for Ni crystals irradiated under similar conditions. The influence of chemical complexity on defect production and clustering at early-stage under room temperature irradiation up to dose of 1 dpa is discussed based on positron annihilation spectroscopy results. Defect structure evaluation in Ni and NiFeCoCr is also discussed based on transmission electron microscopy results over a prolonged irradiation at both room and elevated temperatures. Compared with chemically complex NiFeCoCr, larger dislocation loops thus less lattice strain are expected to form in pure Ni. Moreover, the role of chemical disorder in this CSA is also investigated based on ab initio calculations using large supercells. Finally, to understand the impact of chemical complexity effect on defect structure evolution, this integrated research effort attempts to link the relatively large charge redistribution due to difference in valence electron counts resulting from alloying different 3d transition metal elements, moderate lattice distortion arising from similar adaptable atomic size, and notable suppressed or delayed damage evolution in NiFeCoCr.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Understanding the Mechanism of Light and Elevated Temperature Induced Degradation of p-type Silicon Solar Cells (Final Report)

Light- and elevated-temperature-induced degradation (LeTID) was first discovered in multicrystalline Si (mc-Si) solar cells and was initially attributed to metal impurities. Later, LeTID was reported in Czochralski (Cz) and float-zone (FZ) Si, and is considered as an important efficiency loss mechanism in p-type passivated emitter rear contact (p-PERC) Cz Si solar cells. LeTID causes ~10% relative and permeant efficiency losses in these cells in warmer climate regions where the module temperature is > 50 °C. Unlike light-induced degradation (LID), which is also observed in p-PERC cells, LeTID is slower and takes weeks to months in the field to saturate. Another difference compared to LID is that regeneration in LeTID proceeds very slowly, and field regeneration could take > 25 years — essentially the life of the module. Unlike B-O defects that are responsible for LID, neither B nor O impurities are directly involved in LeTID. LeTID appears to be unique to p-type Si, and is also observed in Ga-doped Si. Currently, most experimental evidence relates LeTID to the injection of hydrogen present in the dielectric surface passivation layers, such as SiN x and Al 2 O 3 , into the monocrystalline Si (c-Si) bulk during the fast-firing step. The involvement of hydrogen is further strengthened by controlled studies that show that increasing the amount of hydrogen in the dielectric during fast-firing increases the degree of LeTID. Similar to LID, a regeneration process has been discovered for LeTID. Regeneration of LeTID defects occurs when samples are exposed to 2–4 Suns illumination at elevated temperatures of 140–220 °C for 2–15 hr. Given the slower kinetics of LeTID and sample regeneration compared to LID, this poses a challenge for the manufacturing and field reliability of p-PERC cells, which will be the leading photovoltaic technologies over the next decade. Therefore, there is a need to understand LeTID and develop strategies to mitigate this effect. The defect responsible for LeTID has been extensively studied with over 100 publications, but direct spectroscopic evidence of this defect’s structure is lacking. Without an atomistic understanding of the LeTID defect, it is difficult to assess the long-term efficacy of the current industrial mitigation strategies. This, in turn, has implications on energy production for tens of gigawatts of these cells that will be deployed yearly worldwide. Using electron paramagnetic resonance, we identified a defect associated with LeTID with a g-value of 2.006, which we attribute to an Si dangling bond in an extended defect such as a vacancy agglomerate with H possibly within or in close vicinity. These vacancy agglomerates are likely created during the firing process, during which time H atoms are also injected into the bulk from the hydrogenated SiN x dielectric layer. Our atomistic-level insight shows that the LeTID defect can be mitigated by targeted intrinsic defect engineering of the c-Si material through a slower pull rate of the Cz ingot or 1000 °C oxygen ambient processing of the Si wafer to reduce the vacancy concentration. This project was a collaborative effort between the Colorado School of Mines and the National Renewable Energy Laboratory.

14 SOLAR ENERGY↗