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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Electron irradiation effects in epitaxial InP solar cells

Performance data for InP-based solar cells after irradiation with 1-MeV electrons up to a fluence of 1 x 1016 e/cm2 are presented. Three InP cell structures are considered. Two of these have epitaxially grown active regions, these being a homojunction design and in ITO/InP structure. These are compared with ITO/InP cells without the epitaxial base region. The cell parameter variations, the influence of illumination during irradiation, and the effect on cell spectral response and capacitance measurements are discussed. Substantial performance recovery after thermal annealing at 90 C is reported.

Pearsall, N. M.↗
NASA NTRS1972

Evaluation of the hazard from exposure to electron irradiation simulating that in the synchronous orbit

The electron spectrum predicted for the synchronous orbit was simulated to determine the effects that might occur to astroscientists exposed to such irradiation while on a prolonged space station mission in that region. Miniature pigs were exposed to monoenergetic and spectral-fractionated irradiations with 0.5 to 2.1 MeV electrons. Clinical and pathological alterations observed in biopsies were correlated with depth-dose pattern and length of post irradiation period up to one year. With monoenergetic electrons, the lowest dose causing a recognizable lesion was 1450 rad and with increasing dose lesions appeared earlier and were more severe. At the highest dose given, 2650 rad, ulceration extending into the dermis was present by twenty one days and required about four months for complete healing. Spectral-fractionated irradiations, in which the total dose range was essentially comparable to that of the monoenergetic series, resulted in very minimal outer dermis edema at 1790 rad and at no dose employed did necrosis of epidermis or ulceration into dermis occur.

Lippincott, S. W.↗
NASA NTRS1981

Performance of candidate SEPS solar cells as a function of low temperature and low intensity exposure and 1 MeV electron irradiation

The behavior of 144 high-performance shallow-junction silicon solar cells under conditions of low temperature and intensity was examined. The cells represented nine combinations of thickness, base resistivity, front surface texture, and rear surface treatment. At least 16 cells of each type were individually tested both as active elements under light levels between 0.04 and 1.0 solar constant and in the dark as passive rectifiers under external forward bias. One cell type was also irradiated with 1 MeV electrons up to 2.7 x 10 to the 15th e/sq cm. The inferior cells demonstrated high ohmic and/or non-ohmic shunting. No series resistance or Schottky barrier effects were observed. Fluences beyond 10 to the 13th e/sq cm lowered cell current, probably by increasing volume recombination.

Whitaker, A. F.↗
NASA NTRS1973

Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

Jones, C. E.↗
NASA NTRS1978

Recovery of shallow junction GaAs solar cells damaged by electron irradiation

Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.

Walker, G. H.↗
NASA NTRS1979

Effects of electron irradiation on large insulating surfaces used for European Communications Satellites

Samples of aluminized Kapton used for passive thermal control on the VHF shield and the antenna dish of ESA's OTS satellite and its derivatives were subjected to an incident electron beam of 25 keV and irradiated for 8 hours at room temperature and at -173 C under a vacuum of the 10 to the minus 6 th power torr. Visual observations during electron irradiation, measurements of leakage current and discharge characteristics, and material degradation following completion of irradiation are discussed.

Reddy, J.↗
NASA NTRS1979

First principles numerical model of avalanche-induced arc discharges in electron-irradiated dielectrics

The model consists of four phases: single electron dynamics, single electron avalanche, negative streamer development, and tree formation. Numerical algorithms and computer code implementations are presented for the first three phases. An approach to developing a code description of fourth phase is discussed. Numerical results are presented for a crude material model of Teflon.

Beers, B. L.↗
NASA NTRS1971

Hall effect study of electron irradiated Si(Li)

Measurement of the Hall coefficient as a function of temperature between 15 and 300 K allows the separate determination of donor and acceptor concentrations in silicon samples which were irradiated at 240 K by 1-MeV electrons and then thermally annealed at 300 K. In both lithium- and phosphorus-doped silicon irradiation increased the acceptor concentration and decreased the donor concentration due to the formation of vacancy donor pairs. Annealing did not change either concentration in phosphorus-doped silicon and caused both concentrations to decrease in silicon doped with moderate amounts of lithium. In addition to this, in both lithium- and phosphorus-doped silicon the concentration and energy level of the A center were measured at each point in the sample's history. This experiment was limited to float-zoned silicon doped with less than 6 x 10 to the 14th power donors per cu cm.

Stannard, J.↗
NASA NTRS1979

Electron irradiation of tandem junction solar cells

The electrical behavior of 100 micron thick tandem junction solar cells manufactured by Texas Instruments was studied as a function of 1 MeV electron fluence, photon irradiation, and 60 C annealing. These cells are found to degrade rapidly with radiation, the most serious loss occurring in the blue end of the cell's spectral response. No photon degradation was found to occur, but the cells did anneal a small amount at 60 C.

Anspaugh, B. E.↗
NASA NTRS1985

Performance of Hughes GaAs concentrator cells under 1-MeV electron irradiation

Several Hughes gallium arsenide (GaAs) concentrator cells were exposed to 1-MeV electrons at fluences up to 1x10 to the 15th power electrons/sq cm. Performance data were taken after several fluences, at two temperatures, and at concentration levels from 1 to approx. 150x AMO. Data at 1 sun and 25 deg C were taken with an X-25 xenon-lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 by 5 mm with a 4-mm diameter illuminated area.

Curtis, H. B.↗
NASA NTRS2001

Energetic Ion and Electron Irradiation of the Icy Galilean Satellites

Galileo Orbiter measurements of energetic ions (20 keV to 100 MeV) and electrons (20-700 keV) in Jupiter's magnetosphere are used, in conjunction with the JPL electron model (less than 40 MeV), to compute irradiation effects in the surface layers of Europa, Ganymede, and Callisto. Significant elemental modifications are produced on unshielded surfaces to approximately centimeter depths in times of less than or equal to 10(exp 6) years, whereas micrometer depths on Europa are fully processed in approximately 10 years. Most observations of surface composition are limited to optical depths of approximately 1 mm, which are indirect contact with the space environment. Incident flux modeling includes Stormer deflection by the Ganymede dipole magnetic field, likely variable over that satellite's irradiation history. Delivered energy flux of approximately 8 x 10(exp 10) keV/square cm-s at Europa is comparable to total internal heat flux in the same units from tidal and radiogenic sources, while exceeding that for solar UV energies (greater than 6 eV) relevant to ice chemistry. Particle energy fluxes to Ganymede's equator and Callisto are similar at approximately 2-3 x 10(exp 8) keV/square cm-s with 5 x 10(exp 9) at Ganymede's polar cap, the latter being comparable to radiogenic energy input. Rates of change in optical reflectance and molecular composition on Europa, and on Ganymede's polar cap, are strongly driven by energy from irradiation, even in relatively young regions. Irradiation of nonice materials can produce SO2 and CO2, detected on Callisto and Europa, and simple to complex hydrocarbons. Iogenic neutral atoms and meteoroids deliver negligible energy approximately 10(exp 4-5) keV/square cm-s but impacts of the latter are important for burial or removal of irradiation products. Downward transport of radiation produced oxidants and hydrocarbons could deliver significant chemical energy into the satellite interiors for astrobiological evolution in putative sub-surface oceans.

Cooper, John F.↗
NASA NTRS1990

X-ray photoelectron and mass spectroscopic study of electron irradiation and thermal stability of polytetrafluoroethylene

Polytetrafluoroethylene (PTFE) was subjected to 3 keV electron bombardment and then heated in vacuum to 300 C. The behavior of the material as a function of radiation dose and temperature was studied by X-ray photoelectron spectroscopy (XPS) of the surface and mass spectroscopy of the species evolved. A quantitative comparison of the radiation dose rate with that in other reported studies showed that, for a given total dose, the damage observed by XPS is greater for higher dose rates. Lightly damaged material heated to 300 C evolved saturated fluorocarbon species, whereas unsaturated fluorocarbon species evolved from heavily damaged material. After heating the heavily damaged material, those features in the XPS that were associated with damage diminished, giving the appearance that the radiation damage annealed. The apparent annealing of the radiation damage was found to be due to the covering of the network by saturated fragments that easily diffused through the decomposed material to the surface region upon heating.

Wheeler, Donald R.↗
NASA NTRS1989

Ordering in the Fe-Ni system under electron irradiation

The disorder-order transformation was generated in a range of Fe-Ni alloys using 1 MeV electrons in a high voltage electron microscope. The experimental factors that influence the occurrence of the transformation were determined, and the critical disordering temperature, Tc, was determined as a function of composition. It was demonstrated that the irradiation enhanced the ordering reaction kinetics. A metastable, ordered phase transformation was not induced. From the results, it is possible to deduce new information about the Fe-Ni phase diagram below 350 C.

Reuter, K. B.↗
NASA NTRS1990

Thermal stability of electron-irradiated poly(tetrafluoroethylene) - X-ray photoelectron and mass spectroscopic study

Polytetrafluoroethylene (PTFE) was subjected to 3 keV electron bombardment and then heated in vacuum to 300 C. The behavior of the material as a function of radiation dose and temperature was studied by X-ray photoelectron spectroscopy (XPS) of the surface and mass spectroscopy of the species evolved. Lightly damaged material heated to 300 C evolved saturated fluorocarbon species, whereas unsaturated fluorocarbon species were evolved from heavily damaged material. After heating the heavily damaged material, those features in the XPS spectrum that were associated with damage diminished, giving the appearance that the radiation damage had annealed. The observations were interpreted by incorporating mass transport of severed chain fragments and thermal decomposition of severely damaged material into the branched and cross-linked network model of irradiated PTFE. The apparent annealing of the radiation damage was due to covering of the network by saturated fragments that easily diffused through the decomposed material to the surface region upon heating.

Wheeler, Donald R.↗
NASA NTRS1975

Effect of electron irradiation in vacuum on FEP-A silicon solar cell covers

The effect of irradiation on the light transmittance of ethylene-propylene-A (FEP-A) was investigated by measuring the short-circuit current of the cells after each of several electron dose increments, immediately after total irradiation, and 16 hours after total irradiation. Results indicated no apparent overall loss in transmission due to irradiation of FEP-A. However, filter wheel measurements revealed a 'darkening' of the FEP-A at the blue end of the spectrum. Some embrittlement of the FEP-A occurred at an accumulated dose of 67,500,000 rads.

Marsik, S. J.↗
NASA NTRS1985

Performance of GaAs and silicon concentrator cells under 1 MeV electron irradiation

Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 1 MeV electrons at fluences up to 1 x 10 to the 15th electrons per square cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150X AM0. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentrations were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 mm x 5 mm with a 4 mm diameter illuminated area.

Curtis, H. B.↗