Search NASA⌕ Search

SEARCH · Search NASA

Results for “Electron tunneling”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5

Electrode-molecule energy level offsets in a gold-benzene diamine-gold single molecule tunnel junction

One means for describing electron transport across single molecule tunnel junctions (MTJs) is to use density functional theory (DFT) in conjunction with a nonequilibrium Green’s function formalism. This description relies on interpreting solutions to the Kohn–Sham (KS) equations used to solve the DFT problem as quasiparticle (QP) states. Many practical DFT implementations suffer from electron self-interaction errors and an inability to treat charge image potentials for molecules near metal surfaces. For MTJs, the overall effect of these errors is typically manifested as an overestimation of electronic currents. Correcting KS energies for self-interaction and image potential errors results in MTJ current–voltage characteristics in close agreement with measured currents. An alternative transport approach foregoes a QP picture and solves for a many-electron wavefunction on the MTJ subject to open system boundary conditions. It is demonstrated that this many-electron method provides similar results to the corrected QP picture for electronic current. The analysis of these two distinct approaches is related through corrections to a junction’s electronic structure beyond the KS energies for the case of a benzene diamine molecule bonded between two gold electrodes.

Szepieniec, Mark S.↗

Surface Energy Modulated Self‐Assembly of Percolative Gallium Nanodroplet Films for Stretchable Electronics

Advancements in soft robotics and wearable technologies have led to an increased need for flexible and stretchable electronic systems. Liquid metals like Gallium (Ga) and its alloys offer high potential in the field of stretchable electronics and photonics due to their inherent high conductivity and malleability. However, their high surface tension and native oxide formation hinder uniform wetting and continuous film formation to get conducting films. Here, we report a fabrication strategy to realize electrically conductive Ga thin films with effective thicknesses around 100 nm on polymeric and elastomeric substrates. By enhancing the surface energy of the elastomer, we create uniform Ga nanodroplets capable of sustaining stretchability up to 200% strain. Our devices exhibit electronic conduction primarily through tunneling and display strain tunable piezoresistive characteristics, which are explained using Kirchhoff's resistive network and Simmon's analytical tunneling current model. To showcase the device's capability in fields of stretchable electronics, we demonstrate several functional prototypes, including flexible devices integrated with Light Emitting Diodes (LEDs), curvature and pressure sensors, and soft robotic grippers capable of sensing object curvature. The demonstrated devices highlight the potential of this approach for scalable integration of stretchable electronics in soft robotic and wearable platforms.

42 ENGINEERING↗

Twisted bilayer graphene as topological heavy fermion: II. Analytical approximations of the model parameters

The recently-introduced topological heavy fermion (THF) model [1] of twisted bilayer graphene (TBG) aims to reconcile the quantum-dot-like electronic structure of the latter observed by scanning tunneling microscopy, with its electron delocalization seen in transport measurements. The THF model achieves this by coupling localized (heavy) fermions with anomalous conduction electrons. Originally, the parameters of the THF model were obtained numerically from the Bistritzer–Macdonald (BM) model of TBG [1]. In this work, we derive analytical expressions for the THF model parameters as a function of the twist angle, the ratio between the tunneling amplitudes at the AA and AB regions (w 0 /w 1 ), and the screening length of the interaction potential. By numerically computing the THF model parameters across an extensive experimentally-relevant parameter space, we show that the resulting approximations are remarkably good, i.e., within the 30% relative error for almost the entire parameter space. At the single-particle level, the THF model accurately captures the energy spectrum of the BM model over a large phase space of angles and tunneling amplitude ratios. When interactions are included, we also show that the THF description of TBG is good around the magic angle for realistic values of the tunneling amplitude ratios (0.6 ≤ w 0 /w 1 ≤ 1.0), for which the hybridization between the localized and conduction fermions γ is smaller than the onsite repulsion of the heavy fermions U 1 (i.e., |γ| < U 1 ).

Approximation methods↗

Giant Anisotropic Magnetoresistance in Few-Layer α-RuCl 3 Tunnel Junctions

The spin–orbit-assisted Mott insulator α-RuCl 3 is proximate to the coveted quantum spin liquid (QSL) predicted by the Kitaev model. In the search for the pure Kitaev QSL, reducing the dimensionality of this frustrated magnet by exfoliation has been proposed as a way to enhance magnetic fluctuations and Kitaev interactions. Here, in this work, we perform angle-dependent tunneling magnetoresistance (TMR) measurements on ultrathin α-RuCl 3 crystals with various layer numbers to probe their magnetic, electronic, and crystal structures. We observe a giant change in resistance, as large as ~2500%, when the magnetic field rotates either within or out of the α-RuCl 3 plane, a manifestation of the strongly anisotropic spin interactions in this material. In combination with scanning transmission electron microscopy, this tunneling anisotropic magnetoresistance (TAMR) reveals that few-layer α-RuCl 3 crystals remain in the high-temperature monoclinic phase at low temperatures. It also shows the presence of a zigzag antiferromagnetic order below the critical temperature T N ≃ 14 K, which is twice the one typically observed in bulk samples with rhombohedral stacking. Our work offers valuable insights into the relation between the stacking order and magnetic properties of this material, which helps lay the groundwork for creating and electrically probing exotic magnetic phases such as QSLs via van der Waals engineering.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Manipulating single excess electrons in monolayer transition metal dihalide

Polarons are entities of excess electrons dressed with local response of lattices, whose atomic-scale characterization is essential for understanding the many body physics arising from the electron-lattice entanglement, yet difficult to achieve. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we show the visualization and manipulation of single polarons in monolayer CoCl 2 , that are grown on HOPG substrate via molecular beam epitaxy. Two types of polarons are identified, both inducing upward local band bending, but exhibiting distinct appearances, lattice occupations and polaronic states. First principles calculations unveil origin of polarons that are stabilized by cooperative electron-electron and electron-phonon interactions. Both types of polarons can be created, moved, erased, and moreover interconverted individually by the STM tip, as driven by tip electric field and inelastic electron tunneling effect. This finding identifies the rich category of polarons in CoCl 2 and their feasibility of precise control unprecedently, which can be generalized to other transition metal halides.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Image Processing Algorithms for Tuning Quantum Devices and Nitrogen-Vacancy Imaging

Semiconductor quantum dot devices can be challenging to configure into a regime where they are suitable for qubit operation. This challenge arises from variations in gate control of quantum dot electron occupation and tunnel coupling between quantum dots on a single device or across several devices. Furthermore, a single control gate usually has capacitive coupling to multiple quantum dots and tunnel barriers between dots. If the device operator, be it human or machine, has quantitative knowledge of how gates control the electrostatic and dynamic properties of multiqubit devices, the operator can more quickly and easily navigate the multidimensional gate space to find a qubit operating regime. We have developed and applied image analysis techniques to quantitatively detect where charge offsets from different quantum dots intersect, so called anticrossings. In this document we outline the details of our algorithm for detecting single anticrossings, which has been used to fine-tune the inter-dot tunnel rates for a three quantum dot system. Additionally, we show that our algorithm can detect multiple anticrossings in the same dataset, which can aid in the coarse tuning the electron occupation of multiple quantum dots. We also include an application of cross correlation to the imaging of magnetic fields using nitrogen vacancies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Filming movies of attosecond charge migration in single molecules with high harmonic spectroscopy

Electron migration in molecules is the progenitor of chemical reactions and biological functions after light-matter interaction. Following this ultrafast dynamics, however, has been an enduring endeavor. Here we demonstrate that, by using machine learning algorithm to analyze high-order harmonics generated by two-color laser pulses, we are able to retrieve the complex amplitudes and phases of harmonics of single fixed-in-space molecules. These complex dipoles enable us to construct movies of laser-driven electron migration after tunnel ionization of N 2 and CO 2 molecules at time steps of 50 attoseconds. Moreover, the angular dependence of the migration dynamics is fully resolved. By examining the movies, we observe that electron holes do not just migrate along the laser polarization direction, but may swirl around the atom centers. Our result establishes a general scheme for studying ultrafast electron dynamics in molecules, paving a way for further advance in tracing and controlling photochemical reactions by femtosecond lasers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

All-electron, density-functional-based method for angle-resolved tunneling ionization in the adiabatic regime

Here we develop and test a method that integrates many-electron weak-field asymptotic theory (ME-WFAT) [O. I. Tolstikhin, L. B. Madsen, and T. Morishita, Phys. Rev. A 89, 013421 (2014)] in the integral representation (IR) into the density-functional-theory (DFT) framework. In particular, we present modifications of the integral formula in the IR ME-WFAT to incorporate the potential terms unique to DFT. By solving an adiabatic rate equation for the angle-resolved ionization yield in our DFT-based ME-WFAT method, we show that the results are in excellent agreement with those of real-time time-dependent density-functional-theory (TDDFT) simulations for NO, OCS, C⁢H 3 ⁢Br, and C⁢H 3 ⁢Cl interacting with one- and two-color laser fields with a fundamental wavelength of 800 nm. This agreement is significant because the WFAT calculations take only a small fraction of the time of full TDDFT calculations. These results suggest that in the wavelength region commonly used in strong-field experiments (800 nm and longer), our DFT-based WFAT treatment can be used to rapidly screen for the ionization properties of a large number of molecules as a function of alignment or orientation between the molecule and the strong field.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Enhanced Strong-Field Ionization and Fragmentation of Methanol Using Noncommensurate Fields

Electron-initiated chemistry with chemically relevant electron energies (10–200 eV) is at the heart of several high-energy processes and phenomena. To probe these dissociation and fragmentation reactions with femtosecond resolution requires the use of femtosecond lasers to induce ionization of the polyatomic molecules via electron rescattering. Here, we combine noncommensurate fields with intensity-difference spectra using methanol as a model system. Experimentally, we find orders of magnitude enhancement in several product ions of methanol when comparing coherent vs incoherent combinations of noncommensurate fields. This approach not only mitigates multiphoton ionization and multicycle effects during ionization but also enhances tunnel ionization and electron rescattering energy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Ab-initio simulations of coherent phonon-induced pumping of carriers in zirconium pentatelluride

Abstract Laser-driven coherent phonons can act as modulated strain fields and modify the adiabatic ground state topology of quantum materials. Here we use time-dependent first-principles and effective model calculations to simulate the effect of the coherent phonon induced by strong terahertz electric field on electronic carriers in the topological insulator ZrTe 5 . We show that a coherent A 1g Raman mode modulation can effectively pump carriers across the band gap, even though the phonon energy is about an order of magnitude smaller than the equilibrium band gap. We reveal the microscopic mechanism of this effect which occurs via Landau–Zener-Stückelberg tunneling of Bloch electrons in a narrow region in the Brillouin zone center where the transient energy gap closes when the system switches from strong to weak topological insulator. The quantum dynamics simulation results are in excellent agreement with recent pump-probe experiments in ZrTe 5 at low temperature.

36 MATERIALS SCIENCE↗

Coherent growth and characterization of van der Waals 1T-VSe2 layers on GaAs(111)B using molecular beam epitaxy

We report epitaxial growth of vanadium diselenide (VSe₂) thin films in the octahedrally coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy, and x-ray photoelectron spectroscopy indicate high-quality thin films. Further studies show that monolayer VSe₂ films on GaAs are not air stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe₂, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for two- and three-dimensional hybrid devices.

2D materials↗

Physics and chemistry from parsimonious representations: image analysis via invariant variational autoencoders

Electron, optical, and scanning probe microscopy methods are generating ever increasing volume of image data containing information on atomic and mesoscale structures and functionalities. This necessitates the development of the machine learning methods for discovery of physical and chemical phenomena from the data, such as manifestations of symmetry breaking phenomena in electron and scanning tunneling microscopy images, or variability of the nanoparticles. Variational autoencoders (VAEs) are emerging as a powerful paradigm for the unsupervised data analysis, allowing to disentangle the factors of variability and discover optimal parsimonious representation. Here, we summarize recent developments in VAEs, covering the basic principles and intuition behind the VAEs. The invariant VAEs are introduced as an approach to accommodate scale and translation invariances present in imaging data and separate known factors of variations from the ones to be discovered. We further describe the opportunities enabled by the control over VAE architecture, including conditional, semi-supervised, and joint VAEs. Several case studies of VAE applications for toy models and experimental datasets in Scanning Transmission Electron Microscopy are discussed, emphasizing the deep connection between VAE and basic physical principles. Python codes and datasets discussed in this article are available at https://github.com/saimani5/VAE-tutorials and can be used by researchers as an application guide when applying these to their own datasets.

36 MATERIALS SCIENCE↗

The Future Circular Collider: a Summary for the US 2021 Snowmass Process

In this white paper for the 2021 Snowmass process, we give a description of the proposed Future Circular Collider (FCC) project and its physics program. The paper summarizes and updates the discussion submitted to the European Strategy on Particle Physics. After construction of an approximately 90 km tunnel, an electron-positron collider based on established technologies allows world-record instantaneous luminosities at center-of-mass energies from the Z resonance up to tt thresholds, enabling a rich set of fundamental measurements including Higgs couplings determinations at the sub percent level, precision tests of the weak and strong forces, and searches for new particles, including dark matter, both directly and via virtual corrections or mixing. Among other possibilities, the FCC-ee will be able to (i) indirectly discover new particles coupling to the Higgs and/or electroweak bosons up to scales around 7 and 50 TeV, respectively; (ii) perform competitive SUSY tests at the loop level in regions not accessible at the LHC; (iii) study heavy-flavor and tau physics in ultra-rare decays beyond the LHC reach, and (iv) achieve the best potential in direct collider searches for dark matter, sterile neutrinos, and axion-like particles with masses up to around 90 GeV. The tunnel can then be reused for a proton-proton collider, establishing record center-of-mass collision energy, allowing unprecedented reach for direct searches for new particles up to the around 50 TeV scale, and a diverse program of measurements of the Standard Model and Higgs boson, including a precision measurement of the Higgs self-coupling, and conclusively testing weakly-interacting massive particle scenarios of thermal relic dark matter.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Magnetism and spin-dependent transport phenomena across Verwey and Morin transitions in iron oxide/Pt bilayers

Understanding the influence of phase coexistence and phase transitions on spin transport properties in a ferromagnet/heavy metal (FM/HM) system is of utmost importance for spintronics. Here, we report a comprehensive investigation of the magnetic and spin transport properties of biphase iron oxide (BPIO = α-Fe 2 O 3 +Fe 3 O 4 )/Pt films over a wide temperature range, 10K ≤ T ≤ 300K. In-plane (IP) and out-of-plane (OOP) magnetometry and radio frequency transverse susceptibility measurements confirm the characteristic features of the Verwey and Morin transitions at T V ~ 120K and TM ~ 200 K, respectively. Further, anisotropic magnetoresistance (AMR) is observed in the BPIO film, which arises mainly from the spin polarized tunneling of conduction electrons between neighboring uniformly magnetized grains through the resistive grain boundary. Spin Hall magnetoresistance (SMR) and spin Hall anomalous Hall effect (SH-AHE) are detected in the BPIO/Pt films. Around the T V , the temperature evolution of SMR shows a sharp maximum, while SH-AHE exhibits a steep decrease. Both SMR and SH-AHE are strongly susceptible to the Verwey transition but the Morin transition, indicating that the interfacial magnetism of our BPIO/Pt film is dominated by the Fe 3 O 4 phase rather than the α-Fe 2 O 3 phase.

36 MATERIALS SCIENCE↗

Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells

We focus on utilizing sputtered indium tin oxide (ITO) as a recombination layer, having low junction damage to an n-type silicon solar cell with a front-side tunnel oxide passivating electron contact, thereby enabling the development of a high efficiency monolithic perovskite/Si tandem device. High transparency and low resistivity ITO films are deposited via low power DC magnetron sputtering at room temperature onto a front-side thin SiO x /n + poly-Si contact in a complete Cz n-Si cell with a back-side Al 2 O 3 /SiN x passivating boron-diffused p + -emitter on a random pyramid textured surface. We report the cell characteristics before and after ITO sputtering, and we find a cure at 250 °C in air is highly effective at mitigating any sputtering induced damage. Our ITO coated sample resulted in an implied open-circuit voltage (iV oc ) of 684.7 ± 11.3 mV with the total saturation current density of 49.2 ± 14.8 fA/cm 2 , an implied fill factor (iFF) of 81.9 ± 0.8%, and a contact resistivity in the range of 60 mΩ-cm 2 to 90 mΩ-cm 2 . After formation of a local Ag contact to the rear emitter and sputtered ITO film as the front-side contact without grid fingers, the pseudo-efficiency of 20.2 ± 0.5% was obtained with the V oc of 670.4 ± 7 mV and pseudo FF of 77.3 ± 1.3% under simulated one sun with the calculated short-circuit current density of 30.9 mA/cm 2 from the measured external quantum efficiency. Furthermore, our modelling result shows that efficiency exceeding 25% under one sun is practically achievable in perovskite/Si tandem configuration using the ITO recombination layer connecting a perovskite top cell and a poly-Si bottom cell.

14 SOLAR ENERGY↗

Structural tweaking of 2D quantum magnetism

Here, a combination of tunnelling spectroscopy, magnetotransport, electron diffraction and ab initio calculations have revealed that picometre-scale lattice distortions reverse magnetic anisotropy and enhance magnetic frustration in atomically thin ruthenium trichloride — a key step towards realizing a quantum spin liquid in the two-dimensional limit.

36 MATERIALS SCIENCE↗

Femtosecond intramolecular rearrangement of the CH 3 NCS radical cation

Strong-field ionization, involving tunnel ionization and electron rescattering, enables femtosecond time-resolved dynamics measurements of chemical reactions involving radical cations. Here, we compare the formation of CH 3 S + following the strong-field ionization of the isomers CH 3 SCN and CH 3 NCS. The former involves the release of neutral CN, while the latter involves an intramolecular rearrangement. Here, we find the intramolecular rearrangement takes place on a single picosecond timescale and exhibits vibrational coherence. Density functional theory and coupled-cluster calculations on the neutral and singly ionized species help us determine the driving force responsible for intramolecular rearrangement in CH 3 NCS. Our findings illustrate the complexity that accompanies radical cation chemistry following electron ionization and demonstrate a useful tool for understanding cation dynamics after ionization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Order fractionalization in a Kitaev-Kondo model

We describe a mechanism for order fractionalization in a two-dimensional Kondo lattice model, in which electrons interact with a gapless spin liquid of Majorana fermions described by the Yao-Lee (YL) model. When the Kondo coupling to the conduction electrons exceeds a critical value, the model develops a superconducting instability into a state with a a spinor order parameter with charge 4 and spin ( = 1 2. The broken symmetry state develops a gapless Majorana Dirac cone in the bulk. By including an appropriate gauge string, we can show that the charge 4, spinorial order develops off-diagonal long range order that allows electrons to coherently tunnel arbitrarily long distances through the spin liquid.

36 MATERIALS SCIENCE↗