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Results for “Ferroelectric polarization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Enhanced thermoelectric performance of PbSe-graphene nanocomposite manufactured with acoustic cavitation induced defects

An order of magnitude rise in the thermoelectric (TE) performance of the PbSe, a scalable and easy-to-manufacture TE material, has been achieved by incorporating reduced graphene oxide (Gr) nanoplatelets in a PbSe/PbSeO 3 heterostructure formed by acoustic cavitation-assisted oxidation. The fabricated Gr/PbSe/PbSeO 3 nanocomposites exhibit high TE performance with an exceptionally high Seebeck coefficient coupled with low thermal conductivity. The variation in the Seebeck coefficient has been attributed to a reduction in charge carrier mobility due to the ferroelectric polarization effect. Furthermore, the increase in electrical resistivity is minimized by adding graphene. At an optimal weight fraction (0.2 wt%), graphene nano-inclusions lead to superior Seebeck coefficient values as high as ~2000 μV/K at ~500 K, providing high overall TE performance. This study shows substantial changes in the TE properties of PbSe through the incorporation of graphene and PbSeO 3 . The understanding and methodology developed in this study can be exploited for the scalable manufacturing of high-performance TE materials.

Structure-property correlations↗
DOE OSTI2020

Direct Visualization of Current-Stimulated Oxygen Migration in YBa 2 Cu 3 O 7–δ Thin Films

The past years have witnessed major advancements in all-electrical doping control on cuprates. In the vast majority of cases, the tuning of charge carrier density has been achieved via electric field effect by means of either a ferroelectric polarization or using a dielectric or electrolyte gating. Unfortunately, these approaches are constrained to rather thin superconducting layers and require large electric fields in order to ensure sizable carrier modulations. In this work, we focus on the investigation of oxygen doping in an extended region through current-stimulated oxygen migration in YBa 2 Cu 3 O 7–δ superconducting bridges. The underlying methodology is rather simple and avoids sophisticated nanofabrication process steps and complex electronics. Here, a patterned multiterminal transport bridge configuration allows us to electrically assess the directional counterflow of oxygen atoms and vacancies. Importantly, the emerging propagating front of current-dependent doping δ is probed in situ by optical microscopy and scanning electron microscopy. The resulting imaging techniques, together with photoinduced conductivity and Raman scattering investigations, reveal an inhomogeneous oxygen vacancy distribution with a controllable propagation speed permitting us to estimate the oxygen diffusivity. These findings provide direct evidence that the microscopic mechanism at play in electrical doping of cuprates involves diffusion of oxygen atoms with the applied current. The resulting fine control of the oxygen content would permit a systematic study of complex phase diagrams and the design of electrically addressable devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Bowing to ferroelectric artificial flux closure

Here by inserting an epitaxial in-plane buffer layer of Bi 5 FeTi 3 O 15 , an artificial flux closure architecture enables ferroelectric polarization from a single unit cell of BaTiO 3 or BiFeO 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2025

Morphogenesis of spin cycloids in a noncollinear antiferromagnet

Pattern formation in spin systems with continuous-rotational symmetry (CRS) provides a powerful platform to study emergent complex magnetic phases and topological defects in condensed-matter physics. However, its understanding and correlation with unconventional magnetic order along with high-resolution nanoscale imaging are challenging. Here, we employ scanning nitrogen vacancy (NV) magnetometry to unveil the morphogenesis of spin cycloids at both the local and global scales within a single ferroelectric domain of (111)-oriented BiFeO 3 , which is a noncollinear antiferromagnet, resulting in formation of a glassy labyrinthine pattern. We find that the domains of locally oriented cycloids are interconnected by an array of topological defects and exhibit isotropic energy landscape predicted by first-principles calculations. We propose that the CRS of spin-cycloid propagation directions within the (111) drives the formation of the labyrinthine pattern and the associated topological defects such as antiferromagnetic skyrmions. Unexpectedly, reversing the as-grown ferroelectric polarization from [$\overline{1}$ $\overline{1}$ $\overline{1}$] to [111] produces a noncycloidal NV image contrast which ¯ could be attributed to either the emergence of a uniformly magnetized state or a reversal of the cycloid polarity. These findings highlight that (111)-oriented BiFeO 3 is not only important for studying the fascinating subject of pattern formation but could also be utilized as an ideal platform for integrating novel topological defects in the field of antiferromagnetic spintronics.

magnetoelectric↗
DOE OSTI2020

Cooperative Ru(4 d )–Ho(4 f ) magnetic ordering and phase coexistence in the 6 H perovskite multiferroic Ba 3 HoRu 2 O 9

We report cooperative magnetic orderings in a 6H-perovskite multiferroic system, Ba 3 HoRu 2 O 9 , via comprehensive neutron powder diffraction measurements. This system undergoes long-range antiferromagnetic ordering at T N1 ~ 50 K with a propagation wave vector of K 1 = (0.5 0 0), a transition temperature much higher than the previously reported one at ~10 K (T N2 ). Both Ru and Ho-moments order simultaneously below T N1 , followed by spin-reorientations at lower temperatures, demonstrating strong Ru(4d)-Ho(4f) magnetic correlation. Below T N1 another magnetic phase with a propagation wave vector K 2 = (0.25 0.25 0) emerges and coexists with the one associated with K 1 , which is rarely observed and suggests complex magnetism due to phase competition in the magnetic ground state. Here, we argue that the exchange-striction arising from the up-up-down-down spin structure associated with K 2 below T N2 may be responsible for the small ferroelectric polarization reported previously in this compound.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Multipolar multiferroics in 4⁢𝑑 2 /5⁢𝑑 2 Mott insulators

Here, we extend the concept of conventional multiferroicity—where ferroelectric and ferromagnetic orders coexist—to include multipolar degrees of freedom. Specifically, we explore how this phenomenon emerges in 4⁢𝑑 2 /5⁢𝑑 2 Mott insulators with strong spin-orbit and Hund's couplings. Our study uncovers the origin of magnetic multipolar interactions in these systems and demonstrates that a combination of quadrupolar and octupolar magnetic order can simultaneously induce both electrical quadrupolar moments and ferroelectric polarization. By expanding the multiferroic framework to higher-order multipoles, we reveal the possibility of coexisting multipolar orders of different or same ranks, paving the way for different functional properties in a large class of strongly correlated materials.

Mott insulators↗
DOE OSTI2020

Electrical Control of Magnetic Phase Transition in a Type-I Multiferroic Double-Metal Trihalide Monolayer

Controlling magnetism of two-dimensional multiferroics by an external electric field provides special opportunities for both fundamental research and future development of low-cost electronic nanodevices. Here, we report a general scheme for realizing a magnetic phase transition in 2D type-I multiferroic systems through the reversal of ferroelectric polarization. First, based on first-principles calculations, we demonstrate that a single-phase 2D multiferroic, namely, ReWCl 6 monolayer, exhibits two different low-symmetric ($C_2$) phases with opposite in-plane electric polarization and different magnetic order. As a result, an antiferromagnetic-to-ferromagnetic phase transition can be realized by reversing the in-plane electric polarization through the application of an external electric field. These findings not only enrich the 2D multiferroic family, but also uncover a unique and general mechanism to control magnetism by electric field, thus stimulating experimental interest.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Electromagnon Signatures of a Metastable Multiferroic State

Magnetoelectric multiferroic materials, particularly type-II multiferroics where ferroelectric polarizations arise from magnetic order, offer significant potential for the simultaneous control of magnetic and electric properties. However, it remains an open question as to how the multiferroic ground states are stabilized on the free-energy landscape in the presence of intricate competition between the magnetoelectric coupling and thermal fluctuations. Here, in this work, by using terahertz time-domain spectroscopy in combination with an applied magnetic field, photoexcitation, and single-shot detection, we reveal the spectroscopic signatures of a magnetic-field-induced metastable multiferroic state in a hexaferrite. This state remains robust until thermal influences cause the sample to revert to the original paraelectric state. Our findings shed light on the emergence of metastable multiferroicity and its interplay with thermal dynamics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Second-harmonic and linear spectroscopy of $\textit{α}$-In 2 Se 3

We report spectroscopic measurements of optical transmission, ellipsometry, and second-harmonic generation (SHG) from as-grown vapor-deposited $\textit{α}$-In 2 Se 3 nanoflakes ranging in thickness from a single quintuple layer (QL) to bulk material. In this work, we compare these measurements with ab initio calculations of structural and optical properties. Linear optical measurements yield thickness-dependent band gaps and dielectric functions, while SHG diagnoses microscopic film structure and ferroelectric polarization. The rotational anisotropy of SHG for s-polarized incident photons of energy 1.4 eV reveals crystalline symmetry and orientation of individual QLs. Peak SHG intensity increases from one to three QLs, then decreases for larger numbers, tracking thickness-dependent trends in the second-order susceptibility components $χ^{xxx}$ and $χ^{zxx}$. Comparison of measured and calculated SHG spectra for s-polarized photons of energies between 1.2 and 1.7 eV incident upon two QL samples discriminates among candidate stacking arrangements, and favors an arrangement with electric polarization vectors of the two QLs pointing outward in opposite directions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Large enhancement of ferroelectric properties of perovskite oxides via nitrogen incorporation

Perovskite oxides have a wide variety of physical properties that make them promising candidates for versatile technological applications including nonvolatile memory and logic devices. Chemical tuning of those properties has been achieved, to the greatest extent, by cation-site substitution, while anion substitution is much less explored due to the difficulty in synthesizing high-quality, mixed-anion compounds. Here, nitrogen-incorporated BaTiO3 thin films have been synthesized by reactive pulsed-laser deposition in a nitrogen growth atmosphere. The enhanced hybridization between titanium and nitrogen induces a large ferroelectric polarization of 70 μC/cm2 and high Curie temperature of ~1213 K, which are ~2.8 times larger and ~810 K higher than in bulk BaTiO3, respectively. These results suggest great potential for anion-substituted perovskite oxides in producing emergent functionalities and device applications.

Wang, Tao↗
NASA NTRS1998

Properties of PZT-Based Piezoelectric Ceramics Between -150 and 250 C

The properties of three PZT-based piezoelectric ceramics and one PLZT electrostrictive ceramic were measured as a function of temperature. In this work, the dielectric, ferroelectric polarization versus electric field, and piezoelectric properties of PZT-4, PZT-5A, PZT-5H, and PLZT-9/65/35 were measured over a temperature range of -150 to 250 C. In addition to these measurements, the relative thermal expansion of each composition was measured from 25 to 600 C and the modulus of rupture of each material was measured at room temperature. This report describes the experimental results and compares and contrasts the properties of these materials with respect to their applicability to intelligent aerospace systems.

Hooker, Matthew W.↗
DOE OSTI2020

Ferroelectric Switching of Pure Spin Polarization in Two-Dimensional Electron Gas

Two-dimensional electron gas (2DEG) created at compound interfaces can exhibit a broad range of exotic physical phenomena, including quantum Hall phase, emergent ferromagnetism, and superconductivity. Although electron spin plays key roles in these phenomena, the fundamental understanding and application prospects of such emergent interfacial states have been largely impeded by the lack of purely spin-polarized 2DEG. In this paper, by first-principles calculations of the multiferroic superlattice GeTe/MnTe, we find the ferroelectric polarization of GeTe is concurrent with the half-metallic 2DEG at interfaces. Remarkably, the pure spin polarization of the 2DEG can be created and annihilated by polarizing and depolarizing the ferroelectrics and can be switched (between pure spin-up and pure spin-down) by flipping the ferroelectric polarization. Given the electric-field amplification effect of ferroelectric electronics, we envision multiferroic superlattices could open up new opportunities for low-power, high-efficiency spintronic devices such as spin field-effect transistors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Metal Nitride Electrode Stress and Chemistry Effects on Phase and Polarization Response in Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films

Ferroelectric phase stability in hafnium oxide is reported to be influenced by factors that include composition, biaxial stress, crystallite size, and oxygen vacancies. In the present work, the ferroelectric performance of atomic layer deposited Hf 0.5 Zr 0.5 O 2 (HZO) prepared between TaN electrodes that are processed under conditions to induce variable biaxial stresses is evaluated. The post-processing stress states of the HZO films reveal no dependence on the as-deposited stress of the adjacent TaN electrodes. All HZO films maintain tensile biaxial stress following processing, the magnitude of which is not observed to strongly influence the polarization response. Subsequent composition measurements of stress-varied TaN electrodes reveal changes in stoichiometry related to the different preparation conditions. HZO films in contact with Ta-rich TaN electrodes exhibit higher remanent polarizations and increased ferroelectric phase fractions compared to those in contact with N-rich TaN electrodes. HZO films in contact with Ta-rich TaN electrodes also have higher oxygen vacancy concentrations, indicating that a chemical interaction between the TaN and HZO layers ultimately impacts the ferroelectric orthorhombic phase stability and polarization performance. The results of this work demonstrate a necessity to carefully consider the role of electrode processing and chemistry on performance of ferroelectric hafnia films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Control of polarization in bulk ferroelectrics by mechanical dislocation imprint

Defects are essential to engineering the properties of functional materials ranging from semiconductors and superconductors to ferroics. Whereas point defects have been widely exploited, dislocations are commonly viewed as problematic for functional materials and not as a microstructural tool. In this work, we developed a method for mechanically imprinting dislocation networks that favorably skew the domain structure in bulk ferroelectrics and thereby tame the large switching polarization and make it available for functional harvesting. The resulting microstructure yields a strong mechanical restoring force to revert electric field–induced domain wall displacement on the macroscopic level and high pinning force on the local level. This induces a giant increase of the dielectric and electromechanical response at intermediate electric fields in barium titanate [electric field–dependent permittivity (ε 33 ) ≈ 5800 and large-signal piezoelectric coefficient ( d 33 *) ≈ 1890 picometers/volt]. Dislocation-based anisotropy delivers a different suite of tools with which to tailor functional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Theoretical perspective on phase stability and polarization switching in ferroelectric hafnia

Fluorite-based ferroelectric materials are revolutionizing the application space of polar semiconductors. These materials leverage robust polarization of extremely thin films, compatibility with the silicon chip processing, and decades of manufacturing experience to enable a new generation of ferroelectric memory devices. As a new paradigm for ferroelectrics, understanding of phase transitions and the switching mechanism in fluorites is essential both for advancing applications and for fundamental science. In this article, we outline the recent progress that has been made to understand the relative phase stability, phase transition and order parameter coupling, ferroelectric switching through unique nucleation and growth processes, and how defects affect these phases and processes. The main challenges, opportunities, and next steps for leveraging these materials for next-generation devices are reviewed.

Condensed Matter Physics↗
DOE OSTI2023

Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films

The influence of biaxial stress on the maximum and remanent polarizations of 10 nm thick hafnium zirconium oxide thin films in metal–ferroelectric–metal capacitor structures has been quantified. In the as-prepared state with a nominal biaxial tensile strain of 0.20% and no applied extrinsic stress, remanent and maximum polarizations of 7.6 and 13.1 μC/cm 2 , respectively, were measured using a 2 MV/cm applied electric field. Reducing the intrinsic strain by 0.111% through the application of a compressive uniaxial stress results in a decrease in the remanent and maximum polarizations to 6.8 and 12.2 μC/cm 2 , respectively. Here, the polarization dependence on strain is nearly linear between these values. The observed variation in polarization with strain is consistent with strain impacting ferroelastic switching whereby in-plane tension increases the fraction of the short polar axis orienting out-of-plane, hence increasing out-of-plane polarization. In contrast, reducing the in-plane strain through compression results in an increase in the fraction of the long non-polar axis orienting out-of-plane, thereby decreasing out-of-plane polarization.

36 MATERIALS SCIENCE↗