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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Graphene reinforced UHMWPE fibers

Thermoplastic polymers are increasingly used in electric vehicles, hydrogen fuel cell vehicles, and other decarbonization applications due to their lightweight and formability. Higher-strength polymers are needed to supplant metals in the vehicle structure, thereby reducing mass and improving efficiency. Ultra-high molecular weight polyethylene (UHMWPE) fibers possess one of the highest strength-to-weight ratios of technical polymers, and further improvement via reinforcement by nanofillers, such as graphene, will expand their performance envelope. Here, in this work, UHMWPE/graphene nanocomposite fibers were gel spun and characterized for their morphological, microstructural, thermal, and mechanical properties. The addition of a low fraction of graphene improved the tensile strength of the fibers by 25% and tensile modulus by 32%. Differential scanning calorimetry showed an increase in melting temperature and degree of crystallinity, which indicates improved coordination of the molecular chains induced by the addition of graphene. The reinforcement also affected the cross-sectional shape of the fibers; the aspect ratio of the fibers’ elliptical shape declined with increasing graphene content showing the skeletal effect of the graphene nanofillers in the polymer matrix. The reinforcing effect of graphene declined above a threshold concentration, and theoretical modeling was applied to demonstrate that increased agglomerates led to reduced properties. This work demonstrates a simple, effective method to produce graphene-reinforced UHMWPE fibers and lays a foundation for understanding the potential for leveraging graphene to form ultra-high-performance nanocomposite fibers for myriad engineering applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Macro copper-graphene composites with enhanced electrical conductivity

Composites demonstrating simultaneously enhanced-electrical conductivity, current density and lowered-temperature coefficient of resistance (TCR) compared to copper have been highly sought after for their advantages in efficient energy transport behavior. While such conductors have been demonstrated in 1D (nanowires) and 2D (films) samples, achieving similar behavior in 3D has been challenging owing to the limitations of the synthesis techniques used. In this paper, novel macro-scale 3D copper conductors were demonstrated with simultaneously increased electrical conductivity and decreased temperature coefficient of resistance (TCR) through the addition of graphene. Hot-extrusion was used to manufacture over 1-m-long, 2-mm-diameter copper-graphene composites with varying graphene content and defect density. Results showed that the electrical conductivity and current density in composites with low defect density graphene increased monotonically as a function of graphene content. They also demonstrated a significant decrease of over 17% in TCR with the addition of only 15 ppm graphene along with over 52% improvement in current density. Comparatively composites with high defect density graphene demonstrated lower electrical conductivity and current density. This study provides first-of-its-kind evidence of 3D metal composites whose bulk electrical performance has been enhanced using graphene additive in minute quantities. Further developments in this area are essential to achieve high performance composite conductors that can improve energy transport efficiency and pave way for industrial adoption of such materials in the future.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Doping of Cr in Graphene Using Electron Beam Manipulation for Functional Defect Engineering

Chromium atoms in graphene have been proposed to exhibit magnetic moments and spin-selective conducting states depending on the local bonding geometry within the graphene structure, which could lead to interesting applications in spintronics. Despite this interest, there are few direct experimental reports of Cr dopants in graphene even though it is theorized to be stable. Here, we demonstrate the introduction of single Cr dopant atoms into the graphene lattice and onto graphene edges through the controlled use of a focused electron beam in a scanning transmission electron microscope. Here, we show local control of doping locations, and when coupled with targeted in situ milling during scanning of the e-beam, these strategies demonstrate an important component of the fabrication of tailored nanostructured devices in the electron microscope. The approach is validated with first-principles calculations to understand synthesis pathways during fabrication and reveal the energetics and local properties of Cr atoms embedded in graphene; for example, Cr doping can convert graphene into a magnetic and semiconducting material, which suggests Cr-doped graphene can be used as a building block for potential electronic devices and a means to construct them.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Trivalent ion overcharging on electrified graphene

We report the structure of the electrical double layer (EDL) formed near graphene in aqueous environments strongly impacts its performance for a plethora of applications, including capacitive deionization. In particular, adsorption and organization of multivalent counterions near the graphene interface can promote nonclassical behaviors of EDL including overcharging followed by co-ion adsorption. In this paper, we characterize the EDL formed near an electrified graphene interface in dilute aqueous YCl 3 solution using in situ high resolution x-ray reflectivity (also known as crystal truncation rod) and resonant anomalous x-ray reflectivity (RAXR). These interface-specific techniques reveal the electron density profiles with molecular-scale resolution. We find that yttrium ions (Y 3+ ) readily adsorb to the negatively charged graphene surface to form an extended ion profile. This ion distribution resembles a classical diffuse layer but with a significantly high ion coverage, i.e., 1 Y 3+ per 11.4 ± 1.6 Å 2 , compared to the value calculated from the capacitance measured by cyclic voltammetry (1 Y 3+ per ~240 Å 2 ). Such overcharging can be explained by co-adsorption of chloride that effectively screens the excess positive charge. The adsorbed Y 3+ profile also shows a molecular-scale gap (≥ 5 Å) from the top graphene surfaces, which is attributed to the presence of intervening water molecules between the adsorbents and adsorbates as well as the lack of inner-sphere surface complexation on chemically inert graphene. We also demonstrate controlled adsorption by varying the applied potential and reveal consistent Y 3+ ion position with respect to the surface and increasing cation coverage with increasing the magnitude of the negative potential. This is the first experimental description of a model graphene-aqueous system with controlled potential and provides important insights into the application of graphene-based systems for enhanced and selective ion separations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Low-cost, high-efficiency III-V photovoltaics enabled by remote epitaxy through graphene (Final Technical Report)

One of the most important outcomes of this project was that the team developed a method to directly grow graphene layer in wafer-scale on III-V substrates. Conventionally, graphene had to be transferred for remote epitaxy, which has imposed significant challenges in scalability, film quality, and substrate recycling, due to the transfer-related issues. The newly developed method of directly forming 2D layers by Metal-Organic Chemical Vapor Deposition (MOCVD) has realized wafer-scale, defect-free graphene formation for remote epitaxy, which has huge implications not only for solar cells but also in expanding the scalability and the possibility for heterointegration with dissimilar material platforms. Another important outcome was on better understanding of remote epitaxy mechanism. The growth of III-V on graphene is vastly different from directly growing films on III-V substrates, because the surface energy of graphene is very small, meaning that the nucleation density on graphene will be much lower than exposed III-V surfaces. Also, the graphene and the interface properties critically affect remote interaction through graphene. With this obtained knowledge regarding III-V remote epitaxy, we were able to achieve wafer-scale single-crystalline remote epitaxy, 100% exfoliation of the remote epitaxial films, as well as multiple times of GaAs wafer reusability demonstration. The general rule of thumbs found during this project will be a stepping stone for the growth and fabrication of various high-performance devices by remote epitaxy. Lastly, because remote epitaxy and 2DLT offer a pathway to isolate single-crystal membranes from the host wafers, the wafer-scale remote epitaxy processes developed in this project could open up pathways for new functionality and multi-functionality by heterointegration of remote epitaxially formed membranes.

14 SOLAR ENERGY↗
DOE OSTI2021

Increasing the Hot‐Electron Driven Hydrogen Evolution Reaction Rate on a Metal‐Free Graphene Electrode

Abstract Recently, it has been shown that a semiconductor–insulator–graphene device can drive the hydrogen evolution reaction (HER) at the graphene surface with a reduced onset potential by injecting hot electrons into graphene. However, the catalytic properties of graphene are limited by the large hydrogen adsorption energy and lack of electrochemically active sites. To address these limitations, a n ‐silicon/insulator/plasma etched graphene device is investigated, where a dry etch process is used to increase the number of active sites on the graphene by creating a greater number of active edge sites, increasing hydrogen adsorption at a given potential. This has been shown to improve the properties of devices with cold electrons. However, here it is shown that this approach can improve the HER rate with hot electrons. The electrons injected into the graphene from the silicon shift the onset potential of HER by as high as ≈0.8 V reaching a current density of 90 mA cm −2 at an overpotential of ‐0.5 V versus RHE. Furthermore, the comparison between device with pristine graphene shows a ≈2X improvement in current density at high overpotentials. This result shows that hot‐electron devices can be improved by modifying the catalytically active sites without metal catalysts.

Chae, Hyun Uk↗
DOE OSTI2022

The structural modification and magnetism of many-layer epitaxial graphene implanted with low-energy light ions

Modifying the properties of graphene has gained wide interest for a plethora of potential applications, including spintronics. One approach has demonstrated that proton irradiation can induce ferromagnetism in graphene as well as in graphite. However, little is known about how the protons interact with graphene, the mechanism that creates the ferromagnetism, or whether the protons remain in the graphene. Here we report an investigation, broadly relevant to graphitic carbon, using low-energy (360–2000 eV) ions of hydrogen, deuterium, and helium implanted into multilayer epitaxial graphene. Complementary x-ray and neutron reflectivity demonstrate that essentially all of the implanted hydrogen remains chemisorbed in graphene. In situ x-ray diffraction reveals significantly different rates of interlayer expansion of the multilayer graphene. Analysis of these data demonstrates that the interlayer expansion arises entirely from the interstitials created by the ions and not from hydrogen that remains in the graphene. The results also establish a quantitative measure of the layer expansion due to carbon interstitials. Magnetometry and x-ray diffraction studies show that the magnetic moment relates to the amount of interstitial carbon rather than the amount of hydrogen, demonstrating that the induced room-temperature ferromagnetism arises directly from the disrupted bonding of the carbon lattice.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Manipulation of electronic property of epitaxial graphene on SiC substrate by Pb intercalation

Manipulating the electronic properties of graphene has been a subject of great interest since it can aid material design to extend the applications of graphene to many different areas. Here, we systematically investigate the effect of lead (Pb) intercalation on the structural and electronic properties of epitaxial graphene on the SiC(0001) substrate. We show that the band structure of Pb-intercalated few-layer graphene can be effectively tuned through changing intercalation conditions, such as coverage, location of Pb, and the initial number of graphene layers. Lead intercalation at the interface between the buffer layer (BL) and the SiC substrate decouples the BL from the substrate and transforms the BL into a p-doped graphene layer. We also show that Pb atoms tend to donate electrons to neighboring layers, leading to an n-doping graphene layer and a small gap in the Dirac cone under a sufficiently high Pb coverage. This paper provides useful guidance for manipulating the electronic properties of graphene layers on the SiC substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Collective Modes in Multilayer Graphene/𝛼−RuCl 3 Heterostructures

Collective modes in multilayer graphene, such as plasmons and phonons, exhibit sensitivity to displacement fields and interlayer coupling, distinguishing them from their counterparts in single-layer graphene. Here, we engineer collective modes in charge-transfer heterostructures composed of multilayer graphene and 𝛼−RuCl 3 . In heterostructures with a single 𝛼−RuCl 3 interface, the charge transfer generates displacement fields up to 7 V/nm at the interface between 𝛼−RuCl 3 and the adjacent graphene layer—the highest value achieved through charge-transfer methods. As a result of the broken inversion symmetry, we discover enhanced nonlinear optical response and modified phonon selection rules. Conversely, we find that multilayer graphene sandwiched between two 𝛼−RuCl 3 flakes causes displacement fields to cancel. There, we achieve carrier densities as high as 8 ×10 13 cm −2 in multilayer graphene and restore the phonon selection rules to their unperturbed state. Meanwhile, we demonstrate that plasmonic properties derive from the depletion of multiple valence bands. As a result of the quasilinear band dispersion, these “Dirac multiband plasmons” are relatively unaffected by displacement fields. On the other hand, the inverted heterostructure sequence—two multilayer graphene sheets encapsulating 𝛼−RuCl 3 —activates significant alteration of the plasmons via interlayer plasmon-plasmon coupling. Hence, multilayer graphene and 𝛼−RuCl 3 heterostructures offer a gate-free platform for engineering collective modes derived from inversion symmetry and interlayer coupling.

Moore, Samuel L. [Columbia University, New York, N↗
DOE OSTI2022

Graphene Nanopattern for Single-Crystal Film Growth, Defect Reduction and Layer Transfer

Thin film heterostructures are key building blocks for advanced electronic and optoelectronic devices. For this, direct heteroepitaxy has been pursued for decades, although it has been challenging to reduce crystal defects stemming from lattice mismatches and thermal mismatches between materials. The layer transfer method has been proposed as an alternative approach, wherein dissimilar materials are separately grown and then hetero-integrated. However, the applicability of layer transfer techniques is limited by several technical challenges, such as controllability, throughput, and damage to the substrate. Remote epitaxy, which is a recently developed method to produce single-crystalline membranes, is a promising approach but cannot be applied to elemental materials such as Si and Ge. In this work, we report graphene nanopattern as a universal template for the growth of single-crystal thin films that can be exfoliated as a freestanding form. This is realized by the chemical inertness of graphene, which allows selective nucleation at the exposed region, followed by lateral overgrowth onto graphene to form a planarized thin film. By employing graphene nanopattern, both group IV and III-V materials are utilized as the substrate as well as the epilayer. The epilayer can be exfoliated at the graphene interface because partially covered graphene effectively weakens the interface, which is corroborated by theoretical analyses of spalling theory. We reveal that graphene nanopattern not only works as a weakened interface for exfoliation, but also allows for dislocation reduction in heteroepitaxial films. This is because of the flexibility and the dangling-bond-free nature of graphene, which provides an additional path for strain relaxation. Therefore, these results represent a meaningful step toward production of high-quality single-crystal membranes that can be hetero-integrated.

Kim, Hyunseok↗
DOE OSTI2022

Graphene Nanopattern for Single-Crystal Film Growth, Defect Reduction and Layer Transfer

Thin film heterostructures are key building blocks for advanced electronic and optoelectronic devices. For this, direct heteroepitaxy has been pursued for decades, although it has been challenging to reduce crystal defects stemming from lattice mismatches and thermal mismatches between materials. The layer transfer method has been proposed as an alternative approach, wherein dissimilar materials are separately grown and then hetero-integrated. However, the applicability of layer transfer techniques is limited by several technical challenges, such as controllability, throughput, and damage to the substrate. Remote epitaxy, which is a recently developed method to produce single-crystalline membranes, is a promising approach but cannot be applied to elemental materials such as Si and Ge. In this work, we report graphene nanopattern as a universal template for the growth of single-crystal thin films that can be exfoliated as a freestanding form. This is realized by the chemical inertness of graphene, which allows selective nucleation at the exposed region, followed by lateral overgrowth onto graphene to form a planarized thin film. By employing graphene nanopattern, both group IV and III-V materials are utilized as the substrate as well as the epilayer. The epilayer can be exfoliated at the graphene interface because partially covered graphene effectively weakens the interface, which is corroborated by theoretical analyses of spalling theory. We reveal that graphene nanopattern not only works as a weakened interface for exfoliation, but also allows for dislocation reduction in heteroepitaxial films. This is because of the flexibility and the dangling-bond-free nature of graphene, which provides an additional path for strain relaxation. Therefore, these results represent a meaningful step toward production of high-quality single-crystal membranes that can be hetero-integrated.

Kim, Hyunseok↗
DOE OSTI2024

Synthesis of Microscopic 3D Graphene for High‐Performance Supercapacitors with Ultra‐High Areal Capacitance

Abstract Despite graphene being considered an ideal supercapacitor electrode material, its use in commercial devices is limited because few methods exist to produce high‐quality graphene at a large scale and low cost. A simple method is reported to synthesize 3D graphene by graphenization of coal tar pitch with a K 2 CO 3 catalyst. This produces 3D graphenes with high specific surface areas up to 2113 m 2 g −1 and exceptional crystallinity (Raman I D / I G as low as ≈0.15). The material has an outstanding specific capacitance of 182.6 F g −1 at a current density of 1.0 A g −1 . This occurs at a mass loading of 30 mg cm −2 which is 3 times higher than commercial requirements, yielding an ultra‐high areal capacitance of 5.48 F cm −2 . The K 2 CO 3 is recycled and reused over 10 cycles with material quality and electrocapacitive performance of 3D graphene retained and verified after each cycle. The synthesis method and resulting electrocapacitive performance properties create new opportunities for using 3D graphene more broadly in practical supercapacitor devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Coal-derived graphene foam and micron-sized silicon composite anodes for lithium-ion batteries

Silicon-based materials demonstrate significant potential as lithium-ion batteries (LIBs) anode, but their expansion and degradation present engineering design challenges for commercial application. In this study, a porous three-dimensional (3D) graphene and micron-sized silicon composite anode (Si@G foam) was synthesized using humic acid (HA) derived from coal as a graphene precursor. In-situ formation of graphene structure through reducing HA was confirmed by Raman spectra. The reduced HA (rHA) shows similar electrical conductivity compared to the commercial conductive carbon. SEM images depict a 3D skeleton of coal-derived graphene, with silicon particles distributed on the 3D graphene foam's internal surface. The Si@G composite-anode displays a good reversible capacity of ~656 mAh/g at a current density of 50 mA/g, as well as a high-rate capability of ~433 mAh/g at a current density of 800 mA/g, and outstanding cycling stability –89.8% capacity retention after 300 cycles, which is significantly higher than that of other foam structures. During lithiation and de-lithiation, the graphene foam serves as a matrix of electrical conductors and a volume expansion support for silicon. This 3D graphene network will be beneficial for developing advanced silicon-based anodes for high-performance LIBs.

25 ENERGY STORAGE↗
DOE OSTI2024

Electrical property enhancement of non-heat-treatable wrought aluminum alloys using graphene additives

With growing efforts of electrification, aluminum’s role as a light-weight conductor material has become increasingly prominent. There is a critical need to improve the electrical performance of aluminum at room temperature and high operating temperatures. In this study, the effect of graphene nanoparticle additives on the electrical performance of a non-heat treatable alloy were (AA3003) explored. Graphene’s unusual structure and electronic properties were used to improve AA3003 properties. Here, in this work, the effects of graphene on the evolution of electrical properties and microstructural features have been explored on lab scale hot extruded AA3003-graphene composites. Hot pressing schedules and extrusion temperatures were varied to investigate changes in intermetallic dispersion characteristics in the presence of dispersed graphene. We measured a reduction of 10.3 % in the temperature coefficient of resistance in the AA3003 sample with 0.05 wt% graphene extruded at 400 °C, along with a maximum increase of 1.1 % in electrical conductivity at 20 °C. Increasing the hot-pressing times up to 8 hours was also found to consistently increase the electrical conductivity, due to increased precipitation of intermetallic phases. Despite being a non-heat treatable alloy, AA3003 displays interesting precipitation dynamics and grain recrystallization trends that can be modulated with varying levels of heat treatment, graphene concentrations, and hot extrusion process parameters.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Topological band gap in intercalated epitaxial graphene

The study of functional manipulation of graphene is a critical subject, both for fundamental research and practical applications. In this study, we present that the intercalation of 5d transition metals into epitaxial graphene on SiC is a promising strategy for the realization of topologically nontrivial phases with a finite band gap in graphene. Employing first-principles calculations, grounded in density functional theory, we demonstrate that Re- and Ta-intercalated graphene evolve into two-dimensional topological insulators. These exhibit linear Dirac cones and quadratic bands with topological band gaps, respectively. The emergence of these topological states is attributed to the strong spin–orbit coupling strength of the intercalants. We show that the corresponding topological edge states persist within the finite bulk band gap, aligning with the bulk-boundary correspondence. Furthermore, we explore the spin splitting of the band structure, brought about by the inversion symmetry breaking and the spin–orbit coupling. Finally, our study underscores that the intercalation of graphene is an effective and a feasible approach for manipulating the band gap and the topological nature of graphene. Such intercalated graphene systems hold potential utility for spintronics and low-dimensional quantum device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Heteroatom-Doped Flash Graphene

Heteroatom doping can effectively tailor the local structures and electronic states of intrinsic two-dimensional materials, and endow them with modified optical, electrical, and mechanical properties. Recent studies have shown the feasibility of preparing doped graphene from graphene oxide and its derivatives via some post-treatments, including solid-state and solvothermal methods, but they require reactive and harsh reagents. However, direct synthesis of various heteroatom-doped graphene in larger quantities and high purity through bottom-up methods remains challenging. Here, we report catalyst-free and solvent-free direct synthesis of graphene doped with various heteroatoms in bulk via flash Joule heating (FJH). Seven types of heteroatom-doped flash graphene (FG) are synthesized through millisecond flashing, including single-element-doped FG (boron, nitrogen, oxygen, phosphorus, sulfur), two-element-co-doped FG (boron and nitrogen), as well as three-element-co-doped FG (boron, nitrogen, and sulfur). Here, a variety of low-cost dopants, such as elements, oxides, and organic compounds are used. The graphene quality of heteroatom-doped FG is high, and similar to intrinsic FG, the material exhibits turbostraticity, increased interlayer spacing, and superior dispersibility. Electrochemical oxygen reduction reaction of different heteroatom-doped FG is tested, and sulfur-doped FG shows the best performance. Lithium metal battery tests demonstrate that nitrogen-doped FG exhibits a smaller nucleation overpotential compared to Cu or undoped FG. The electrical energy cost for the synthesis of heteroatom-doped FG synthesis is only 1.2 to 10.7 kJ g –1 , which could render the FJH method suitable for low-cost mass production of heteroatom-doped graphene.

01 COAL, LIGNITE, AND PEAT↗
DOE OSTI2024

Charge Transfer Plasmonics in Bespoke Graphene/α-RuCl 3 Cavities

Surface plasmon polaritons (SPPs) provide a window into the nano-optical, electrodynamic response of their host material and its dielectric environment. Graphene/α-RuCl 3 serves as an ideal model system for imaging SPPs since the large work function difference between these two layers facilitates charge transfer that hole dopes graphene with n ~ 10 13 cm –2 free carriers. In this work, we study the emergent THz response of graphene/α-RuCl 3 heterostructures using our home-built cryogenic scanning near-field optical microscope. Using phase-resolved imaging, we clearly observe long wavelength, heavily damped THz SPPs in a series of variable-size graphene cavities. From this, we extract the plasmonic wavelength and scattering rate in the graphene/α-RuCl 3 heterostructures. We determine that the measured plasmon wavelength and electronic scattering rate match our heterostructures’ theoretically predicted values. Here, our results demonstrate that shaping graphene into bespoke cavity structures enables observation and quantification of SPPs in heavily doped graphene that are largely not addressable with other experimental techniques. Moreover, the manifest lack of metallicity observed in the adjacent doped α-RuCl 3 layer provides significant constraints on the nature of the interfacial charge transfer in this 2D heterostructure.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Cesium intercalation of graphene: A 2D protective layer on alkali antimonide photocathode

Alkali antimonide photocathodes have wide applications in free-electron lasers and electron cooling. The short lifetime of alkali antimonide photocathodes necessitates frequent replacement of the photocathodes during a beam operation. Furthermore, exposure to mediocre vacuum causes loss of photocathode quantum efficiency due to the chemical reaction with residual gas molecules. Theoretical analyses have shown that covering an alkali antimonide photocathode with a monolayer graphene or hexagonal boron nitride protects it in a coarse vacuum environment due to the inhibition of chemical reactions with residual gas molecules. Alkali antimonide photocathodes require an ultra-high vacuum environment, and depositing a monolayer 2D material on it poses a serious challenge. In the present work, we have incorporated a novel method known as intercalation, in which alkali atoms pass through the defects of a graphene thin film to create a photocathode material underneath. Initially, Sb was deposited on a Si substrate, and a monolayer graphene was transferred on top of the Sb film. Heat cleaning around 550–600 °C effectively removed the Sb oxides, leaving metallic Sb underneath the graphene layer. Depositing Cs on top of a monolayer graphene enabled the intercalation process. Atomic force microscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, low energy electron microscopy, and x-ray diffraction measurements were performed to evaluate photocathode formation underneath the monolayer graphene. Our analysis shows that Cs penetrated the graphene and reacted with Sb and formed Cs 3 Sb.

2D materials↗