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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Use of friction stir processing to synthesize nanocrystalline, grain boundary segregating Fe-Ti alloys

Grain boundary segregating alloys, a class of alloys designed such that nanocrystalline grain sizes are thermodynamically stabilized by the presence of high segregation energy solutes at the grain boundaries, are typically produced through geometrically limited processing techniques such as equal channel angular extrusion or thin film sputtering. Here, this study explores the use of friction stir processing (FSP) as a novel means of studying and producing these alloys using a test system of Fe-6at%Ti. Spot FSPs with a range of processing parameter sets were produced on bulk, coarse grained bars of material and optimal parameters were identified. Microscopy identified a range of processed materials which achieved nanocrystalline grains on the order of 100 nm, delineating a critical window of processing parameters which limit heat input while inducing sufficient plastic deformation for grain refinement. The finest grained nanocrystalline Fe-Ti achieved a hardness of 7.68 GPa, a significant increase in hardness over pure Fe with a similar microstructure due to increased dislocation density from FSP as well as several strengthening mechanisms produced through the presence and segregation of Ti. These results demonstrated the feasibility of using FSP to produce nanocrystalline grain boundary segregating alloys.

Fe alloys↗
DOE OSTI2020

Controlling colloidal crystals via morphing energy landscapes and reinforcement learning

We report a feedback control method to remove grain boundaries and produce circular shaped colloidal crystals using morphing energy landscapes and reinforcement learning–based policies. We demonstrate this approach in optical microscopy and computer simulation experiments for colloidal particles in ac electric fields. First, we discover how tunable energy landscape shapes and orientations enhance grain boundary motion and crystal morphology relaxation. Next, reinforcement learning is used to develop an optimized control policy to actuate morphing energy landscapes to produce defect-free crystals orders of magnitude faster than natural relaxation times. Morphing energy landscapes mechanistically enable rapid crystal repair via anisotropic stresses to control defect and shape relaxation without melting. This method is scalable for up to at least N = 10 3 particles with mean process times scaling as N 0.5 . Further scalability is possible by controlling parallel local energy landscapes (e.g., periodic landscapes) to generate large-scale global defect-free hierarchical structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Local Multimodal Electro-Chemical-Structural Characterization of Solid-Electrolyte Grain Boundaries

Typical models of polycrystalline ionic materials treat the grain boundary properties as single valued, without consideration of the full range of values that define the macroscopically measured average. Here a unique experimental platform suitable for local multimodal characterization of individual grain boundaries in bicrystal fibers is reported. A variation of three orders of magnitude in the grain boundary conductivity of ceria is observed, as measured across six individual bicrystals by both alternating current impedance spectroscopy and direct current (D.C.) linear sweep voltammetry. Nonlinear behavior of the D.C. measurements is consistent with resistance due to a space charge effect. Time-of-flight secondary ion beam spectroscopy reveals a correlation between grain boundary resistance and the concentration of impurities Si, Al, and Ca segregated at the grain boundaries, although the bulk concentrations of these impurities are negligible. Electron backscatter diffraction analysis of the crystal orientations suggests a correlation between the misorientation across the grain boundaries and grain boundary resistance. These correlations point towards a grain boundary resistance that arises from impurity-generated space charge effects and variations in impurity concentration and hence resistivity driven by the energetics of impurity segregation to grain boundaries of differing surface energies.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Imaging local luminescence variations in CdSe 0.1 Te 0.9 thin films grown by the colossal grain growth process

Clear visualization and understanding of luminescence properties of grain interiors and grain boundaries in polycrystalline thin-film photovoltaic materials are crucial to achieving high-performance solar cells. Luminescence-based measurements, for example, reveal sub-bandgap energetic disorder or impurity-related radiative transitions in these materials, and when performed in the absolute scale, they can show the extent of voltage-limiting non-radiative recombination. Here we use a hyperspectral imaging technique to investigate inter- and intra-grain photoluminescence variations in polycrystalline CdSe 0.1 Te 0.9 films made by the colossal grain growth process. We observe that grain boundaries show higher luminescence than grain interiors for all energies below the bandgap energy. Multiple distinct sub-bandgap defect transitions are detected and determined to be related to donor-acceptor pair impurities. A comparison of the excitation-intensity-dependent photoluminescence at the grain boundaries with grain interiors suggests that carrier concentration is higher at grain boundaries. This finding is supported by photoemission electron microscopy imaging of the films, showing approximately 70 meV upward energy shift in the band structure at the grain boundaries. Finally, we investigate a dramatic thermal quenching behavior related to the donor-acceptor pairs luminescence over a temperature range and use a rate-equation model to attribute it to the sudden redirection of the radiative recombination channels to non-radiative channels with increasing temperature.

14 SOLAR ENERGY↗
DOE OSTI2020

Spectrum of embrittling potencies and relation to properties of symmetric-tilt grain boundaries

Grain boundaries in metallic materials can exist in a wide range of stable and metastable structures. In addition, the properties of a grain boundary may be altered through solute segregation. In this work, we present a formulation that combines the spectrum of embrittling potencies associated with solute segregation with site-occupancy statistics. As a prototype problem, we illustrate the relation between segregation and embrittlement in the case of S segregation to grain boundaries in Ni. To obtain a population of site segregation energies, we perform molecular statics calculations on 378 different symmetric-tilt grain boundaries and their free surface equivalents, using an embedded-atom method interatomic potential developed specifically for studying embrittlement. Our results show that it is important to consider both the energies associated with embrittlement and the probability of occupancy to describe the general embrittling nature of a grain boundary. When analyzed in isolation, certain grain boundaries show large embrittling potencies; however, that effect is diminished when the probability of S segregation to that grain boundary is considered within a polycrystal. We propose a new quantity, the embrittling estimator, which not only categorizes grain boundaries as embrittling or strengthening, but also considers site occupancy probabilities, so that the embrittlement behavior of grain boundaries within a network of grain boundaries can be compared. Finally, we examine the relationship between embrittlement behavior and innate grain boundary properties, such as the free volume, and find statistical evidence that the complex nature of embrittlement cannot be explained by linear correlations with excess volumes or energies. Ultimately, this combined approach provides a theoretical tool to assist grain boundary engineering of metastable alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The effects of aluminum concentration on the microstructural and electrochemical properties of lithium lanthanum zirconium oxide

Cubic lithium lanthanum zirconium oxide (Li 7-x Al x La 3 Zr 2 O 12 , LLZO) garnet has gained attention as a promising next-generation electrolyte for lithium batteries due to its high ionic conductivity and chemical stability with lithium metal. The high conductivity can be achieved through doping over a range of aluminum concentrations. In this study, we hot-pressed samples to achieve <2% nominal porosity with aluminum concentrations from x = 0.25–0.55 mol to understand the effect of aluminum on microstructure and electrochemistry. It was observed that beyond the aluminum solubility limit (x = ~0.40), resistive secondary phases formed at the grain boundaries. As a result, the percent grain boundary resistance increased from 17.6 to 41.2% for x = 0.25 and x = 0.55, respectively. Both the grain boundary and bulk activation energies remained relatively constant as the aluminum concentrations increased (~0.44 eV and ~0.39 eV, respectively). It was, therefore, surmised that the mobility term of the Nernst–Einstein equation was roughly independent of aluminum concentration and the major variable controlling bulk conductivity was the number of lithium charge carriers. As a result, as the aluminum concentration increased from x = 0.25 to x = 0.55 the bulk conductivity decreased from 0.56 to 0.15 mS cm -1 . Following these trends of increasing grain boundary resistance and decreasing bulk conductivity with increasing aluminum concentration, x = 0.25 had the highest total conductivity (0.46 mS cm -1 ). We demonstrated that aluminum concentration has a significant effect on the microstructure and electrochemical properties of LLZO. In conclusion, we believe this work could help understand how to link processing, microstructure, and electrochemical properties to guide the manufacturing of LLZO for use in solid-state batteries.

25 ENERGY STORAGE↗
DOE OSTI2021

Cubic AgMnSbTe 3 Semiconductor with a High Thermoelectric Performance

The reaction of MnTe with AgSbTe 2 in an equimolar ratio (ATMS) provides a new semiconductor, AgMnSbTe 3 . AgMnSbTe 3 crystallizes in an average rock-salt NaCl structure with Ag, Mn, and Sb cations statistically occupying the Na sites. AgMnSbTe 3 is a p-type semiconductor with a narrow band gap of ~0.33 eV. A pair distribution function analysis indicates that local distortions are associated with the location of the Ag atoms in the lattice. Density functional theory calculations suggest a specific electronic band structure with multi-peak valence band maxima prone to energy convergence. In addition, Ag 2 Te nanograins precipitate at grain boundaries of AgMnSbTe 3 . Here, the energy offset of the valance band edge between AgMnSbTe 3 and Ag 2 Te is ~0.05 eV, which implies that Ag 2 Te precipitates exhibit a negligible effect on the hole transmission. As a result, ATMS exhibits a high power factor of ~12.2 μWcm -1 K -2 at 823 K, ultralow lattice thermal conductivity of ~0.34 Wm -1 K -1 (823 K), high peak ZT of ~1.46 at 823 K, and high average ZT of ~0.87 in the temperature range of 400–823 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

The effect of remnant CdSe layers on the performance of CdSeTe/CdTe photovoltaic devices

Thin film CdTe-based photovoltaic devices have achieved high efficiency above 22 %. The recent improvement in efficiency is due to Se alloying in the CdTe absorbers to form a CdSeTe/CdTe structure. The subsequent band gap grading increases the short circuit current density. The Se can be introduced by depositing a precursor thin film of either CdSe or a CdSeTe alloy and then diffusing the Se into the CdTe during the high temperature cadmium chloride activation process. Using CdSe is preferred because it is easier to control the Se concentration. However, during fabrication of the CdSeTe/CdTe devices, the CdSe thickness needs to be precisely controlled to prevent the retention of a CdSe remnant layer after the activation treatment. Retention of a remnant CdSe layer causes a dramatic reduction in device efficiency. In this work, we show that the reduction in efficiency is caused by a number of factors. The remnant CdSe layer is n-type which moves the position of the p-n junction. Also, it is widely thought that the CdSe remnants are photo-inactive. In this work, we clarify that the individual CdSe grains are actually highly photo-active. However, the grain sizes in the CdSe remnant and the adjacent CdSeTe layer are very small resulting in a high grain boundary area. Although the grain boundaries are passivated with chlorine, cathodoluminescence imaging and electrical measurements show that this is only partially effective. Also, EQE measurements show that the remnant CdSe causes parasitic absorption. Overall, the remnant CdSe layer causes a reduction in short circuit current density and device efficiency. The thickness of the CdSe precursor layer and the cadmium chloride activation process conditions must be precisely optimised to ensure that all the CdSe is consumed and inter-diffused to form the CdSeTe alloy for highest efficiency devices.

CdSe remnant↗
NASA NTRS1989

Determination of the mean solid-liquid interface energy of pivalic acid

A high-confidence solid-liquid interfacial energy is determined for an anisotropic material. A coaxial composite having a cylindrical specimen chamber geometry provides a thermal gradient with an axial heating wire. The surface energy is derived from measurements of grain boundary groove shapes. Applying this method to pivalic acid, a surface energy of 2.84 erg/sq cm was determined with a total systematic and random error less than 10 percent. The value of interfacial energy corresponds to 24 percent of the latent heat of fusion per molecule.

Singh, N. B.↗
DOE OSTI2026

Machine-learning interatomic potentials for interfaces in all-solid-state batteries: Perspectives on training data, model selection, and validation

Interfaces play a pivotal role in dictating the performance and reliability of all-solid-state batteries (ASSBs), where complex electro-chemo-mechanical phenomena at grain boundaries (GBs) and interfaces can lead to degradation and failure. Traditional atomistic simulation methods, such as first-principles calculations and classical molecular dynamics, face limitations in modeling these interfaces due to either high computational cost or insufficient transferability to the diverse atomic environments evolving at interfaces. Machine-learning interatomic potentials (MLIPs) have emerged as a transformative approach, enabling large-scale, high-accuracy simulations of disordered and chemically complex systems by leveraging the predictability of machine learning models trained on first-principles data. Recent applications of MLIPs have demonstrated their ability to capture intricate behaviors at ASSB interfaces, including ion transport, interfacial evolution, and degradation mechanisms, with accuracy and efficiency unattainable by conventional methods. This prospective paper presents comprehensive analysis and practical guidance for MLIP development for GBs and interfaces in ASSBs, with a focus on three key pillars: data generation, model selection, and validation. Here, we review the current state of MLIP applications for GBs and interfaces in both general and ASSB-specific materials, highlighting best practices and challenges in constructing diverse and representative datasets, choosing appropriate machine learning architectures, and rigorously validating model performance. We also discuss emerging strategies and opportunities for improved reliability and efficiency of MLIPs to simulate realistic interfaces in ASSBs.

Energy - Storage↗
DOE OSTI2024

Design and Development of Stable Nanocrystalline High‐Entropy Alloy: Coupling Self‐Stabilization and Solute Grain Boundary Segregation Effects

Abstract Grain growth is prevalent in nanocrystalline (NC) materials at low homologous temperatures. Solute element addition is used to offset excess energy that drives coarsening at grain boundaries (GBs), albeit mostly for simple binary alloys. This thermodynamic approach is considered complicated in multi‐component alloy systems due to complex pairwise interactions among alloying elements. Guided by empirical and GB‐segregation enthalpy considerations for binary‐alloy systems, a novel alloy design strategy, the “ pseudo‐binary thermodynamic ” approach, for stabilizing NC‐high entropy alloys (HEAs) and other multi‐component‐alloy variants is proposed. Using Al 25 Co 25 Cr 25 Fe 25 as a model‐HEA to validate this approach, Zr, Sc, and Hf, are identified as the preferred solutes that would segregate to HEA‐GBs to stabilize it against growth. Using Zr, NC‐Al 25 Co 25 Cr 25 Fe 25 HEAs with minor additions of Zr are synthesized, followed by annealing up to 1123 K. Using advanced characterization techniques— in situ X‐ray diffraction (XRD), scanning/transmission electron microscopy (S/TEM), and atom probe tomography, nanograin stability due to coupling self‐stabilization and solute‐GB segregation effects is reported in HEAs up to substantially high temperatures. The self‐stabilization effect originates from the preferential GB‐segregation of constituent HEA‐elements that stabilizes NC‐Al 25 Co 25 Cr 25 Fe 25 up to 0.5 T m ( T m –melting temperature). Meanwhile, solute‐GB segregation originates from Zr segregation to NC‐Al 25 Co 25 Cr 25 Fe 25 GBs; this results in further stabilization of the phase and grain‐size (≈14 nm) up to ≈0.58 and ≈0.64 T m , respectively.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Grain Boundary Phases in NbFeSb Half‐Heusler Alloys: A New Avenue to Tune Transport Properties of Thermoelectric Materials

Abstract Many thermoelectric materials benefit from complex microstructures. Grain boundaries (GBs) in nanocrystalline thermoelectrics cause desirable reduction in the thermal conductivity by scattering phonons, but often lead to unwanted loss in the electrical conductivity by scattering charge carriers. Therefore, modifying GBs to suppress their electrical resistivity plays a pivotal role in the enhancement of thermoelectric performance, zT . In this work, different characteristics of GB phases in Ti‐doped NbFeSb half‐Heusler compounds are revealed using a combination of scanning transmission electron microscopy and atom probe tomography. The GB phases adopt a hexagonal close‐packed lattice, which is structurally distinct from the half‐Heusler grains. Enrichment of Fe is found at GBs in Nb 0.95 Ti 0.05 FeSb, but accumulation of Ti dopants at GBs in Nb 0.80 Ti 0.20 FeSb, correlating to the bad and good electrical conductivity of the respective GBs. Such resistive to conductive GB phase transition opens up new design space to decouple the intertwined electronic and phononic transport in thermoelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Towards defect engineering in hexagonal MoS 2 nanosheets for tuning hydrogen evolution and nitrogen reduction reactions

Combined computational and experimental approaches were used to evaluate defective 2H-MoS 2 nanosheets for their activity and selectivity for hydrogen evolution reaction (HER) and nitrogen reduction reaction (NRR). Density functional theory calculations were used to understand the relationship between HER and NRR activity on the ideal basal MoS 2 plane, seven grain-boundaries, ten single-/few-atom vacancies and anti-sites, and zigzag and armchair edge sites. The results confirm that 2H-MoS 2 should contain several defects with high activity for HER: armchair and zigzag edges, VS vacancy, MoS 2 anti-site, and S-S and Mo-Mo grain boundaries. Considering Gibbs free energy change for all the steps in the NRR mechanism and kinetic barriers for a key NRR step, we have found that activation of perspective NRR selective sites in 2H-MoS 2 , namely V MoS6 and clusters of S-vacancies, would require large overpotential, conditions at which HER dominates. The DFT conclusions are supported by the electrochemical studies of NRR activity and selectivity under aqueous conditions, which show an increase in NRR activity but a decrease in Faradaic efficiency as applied cell potential becomes more negative. The results of this work therefore highlight the challenges in activating natural 2H-MoS 2 for NRR, which would require additional material engineering or reaction condition optimization as a way to suppress HER, decrease the NRR overpotential or preferentially both.

2H-MoS2↗
NASA NTRS2023

Molecular Dynamics Simulations of Austenite-Martensite Interfaces in NiTi Shape Memory Alloys

The unique properties of shape memory alloys (SMAs) arise from a reversible martensitic transformation. The nucleation and migration of austenite-martensite interfaces are the key to understanding the SMA properties. Molecular dynamics (MD) simulations can provide important atomic-scale information about these aspects of the transformation, but their time scales prevent the interface formation under near-equilibrium conditions relevant to experiment. We present a new MD methodology which allows for the natural formation of energetically preferred austenite-martensite interfaces under near-equilibrium conditions. Our simulation demonstrates that the interfaces in NiTi are semi-coherent, composed of a series of terrace planes and structural disconnections, and they migrate rapidly through single crystals with only a small thermodynamic driving force. In bi-crystals and polycrystals, the migration of these same interfaces is significantly impeded by grain boundaries and stored elastic energy. This behavior can result in SMA hysteresis via several mechanisms associated with nucleation and non-elastic strain accommodation.

Gabriel Plummer↗
NASA NTRS2007

Dynamics of Nanoscale Grain-Boundary Decohesion in Aluminum by Molecular-Dynamics Simulation

The dynamics and energetics of intergranular crack growth along a flat grain boundary in aluminum is studied by a molecular-dynamics simulation model for crack propagation under steady-state conditions. Using the ability of the molecular-dynamics simulation to identify atoms involved in different atomistic mechanisms, it was possible to identify the energy contribution of different processes taking place during crack growth. The energy contributions were divided as: elastic energy, defined as the potential energy of the atoms in fcc crystallographic state; and plastically stored energy, the energy of stacking faults and twin boundaries; grain-boundary and surface energy. In addition, monitoring the amount of heat exchange with the molecular-dynamics thermostat gives the energy dissipated as heat in the system. The energetic analysis indicates that the majority of energy in a fast growing crack is dissipated as heat. This dissipation increases linearly at low speed, and faster than linear at speeds approaching 1/3 the Rayleigh wave speed when the crack tip becomes dynamically unstable producing periodic dislocation bursts until the crack is blunted.

Yamakov, V.↗
DOE OSTI2020

Expression of interfacial Seebeck coefficient through grain boundary engineering with multi-layer graphene nanoplatelets

Energy filtering has been a long-sought strategy to enhance a thermoelectric material's figure of merit zT through improving its power factor. Here we show a composite of multi-layer graphene nanoplatelets (GNP) and n-type Mg 3 Sb 2 leads to the expression of an energy filtering like effect demonstrated by an increase in the material's Seebeck coefficient and maximum power factor, without impact on the material's carrier concentration. We analyse these findings from the perspective of a heterogeneous material consisting of grain and grain boundary phases, instead of a more traditional and common analysis that assumes a homogeneously transporting medium. An important implication of this treatment is that it leads to the development of an interfacial Seebeck coefficient term, which can explain the observed increase in the material's Seebeck coefficient. The contribution of this interfacial Seebeck coefficient to the overall Seebeck coefficient is determined by the relative temperature drop across the grain boundary region compared to that of the bulk material. In Te doped Mg 3 Sb 2 we show the introduction of GNP increases the interfacial thermal resistance of grain boundaries, enhancing the contribution of the interfacial Seebeck coefficient arising from grain boundaries to the overall Seebeck coefficient. Without significant detriment to the electrical conductivity this effect results in a net increase in maximum power factor. This increased interfacial thermal resistance also leads to the synergistic reduction of the total thermal conductivity. As a result, we enhance zT of the Mg 3 Sb 2 to a peak value of 1.7 near 750 K. Considering the two-dimensional nature of the grain boundary interface, this grain boundary engineering strategy could be applied to a few thermoelectric systems utilizing various two-dimensional nanomaterials.

42 ENGINEERING↗
NASA NTRS1985

Surface Passivation and Junction Formation Using Low Energy Hydrogen Implants

New applications for high current, low energy hydrogen ion implants on single crystal and polycrystal silicon grain boundaries are discussed. The effects of low energy hydrogen ion beams on crystalline Si surfaces are considered. The effect of these beams on bulk defects in crystalline Si is addressed. Specific applications of H+ implants to crystalline Si processing are discussed. In all of the situations reported on, the hydrogen beams were produced using a high current Kaufman ion source.

Fonash, S. J.↗
DOE OSTI2023

Synthesis, sintering, and grain growth kinetics of Hf 6 Ta 2 O 17

Here Aasystematic study of the solid-state synthesis, pressureless sintering, and grain growth kinetics of Hf 6 Ta 2 O 17 is presented. The ideal conditions for solids-state synthesis of Hf 6 Ta 2 O 17 powder with minimal particle necking was 1250 °C for 2 h in air. The resultant powder has an average particle size of 210 ± 70 nm. The combined synthesis and ball-milling procedure produces highly sinterable Hf 6 Ta 2 O 17 powder, achieving > 97 % of theoretical density after pressureless sintering at 1600 °C for 2 h in air. The grain growth mechanism was sensitive to processing conditions, appearing to be primarily driven by surface diffusion below 1600 °C and grain boundary diffusion above 1650 °C. The respective activation energies for grain growth were found to be Q S = 659 ± 79 kJ mol -1 and Q GB = 478 ± 63 kJ mol -1 .

36 MATERIALS SCIENCE↗