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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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84 records · Page 5
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DOE OSTI2025

Ensuring High-Purity Liquid Argon for the LBNF FDC: Collaborative Cryogenics Research Between UNICAMP and Fermilab

Ensuring High-Purity Liquid Argon for the LBNF FDC: Collaborative Cryogenics Research Between UNICAMP and Fermilab R. Doubnik1, M. Adamowski1, F. de M. Blaszczyk1, A. Hahn1, D. Montanari1, R. Mrowca1, Z. West1, C. Adriano2, T. P.M. Alegre2, D. Correia2, A. A. B. Machado2, E. Segreto2, R. G. Gonçalves3, E. M. Assaf6, J. M. Assaf3, D. Cardoso3, M. B. Fontes4, H. Da Motta4, D. Noriler5, P. J. G. Pagliuso2. 1 Fermi National Accelerator Laboratory, PO Box 500, Batavia IL 60510, United States. 2 “Gleb Wataghin” Institute of Physics, UNICAMP, Campinas-SP, 13083-859, Brazil. 3 CPqMAE - Research Center on Advanced Materials and Energy, Federal University of São Carlos (UFSCar), São Carlos, 13565-905, Brazil. 4 The Brazilian Center for Research in Physics (CBPF), Rio de Janeiro-RJ, 22290-180, Brazil. 5 School of Chemical Engineering, UNICAMP, Campinas-SP, 13083-859, Brazil. 6 São Carlos Institute of Chemistry, University of São Paulo, São Carlos-SP, 13566-590, Brazil. Email: rdoubnik@fnal.gov Abstract. The Long-Baseline Neutrino Facility (LBNF) located at the Sanford Underground Research Facility (SURF) in Lead, South Dakota, hosts the Deep Underground Neutrino Experiment (DUNE). This experiment employs cryostats containing nearly 70,000 metric tons of high-purity liquid argon (LAr). Ensuring LAr purity is critical for achieving the required electron lifetime, which directly impacts the experiment’s signal-to-noise ratio. The Horizontal Drift (HD) detector demands an electron lifetime exceeding 3 ms within its 3.5 m drift, equivalent to less than 100 parts-per-trillion (ppt) Oxygen contamination, while the Vertical Drift (VD) detector requires over 6 ms electron lifetime within its 6.0 m drift, corresponding to less than 50 ppt Oxygen contamination. To mitigate Nitrogen (N2) quenching of scintillation light, N2 contamination must remain below 1 ppm, as higher levels can result in up to a 20 % loss of light. The Brazil State University of Campinas (UNICAMP) significantly contributes to LBNF FDC through the development of argon purification and regeneration systems for HD and VD cryostats. UNICAMP designed and constructed the Purification Liquid Argon Cryostat (PuLArC), a small-scale test facility holding approximately 90 liters of LAr. Tests using PuLArC demonstrated that 1.2 kg of Li-FAU zeolite could reduce N₂ contamination from 20-50 ppm to 0.1-1.0 ppm within 1-2 hours. Tests at Fermilab’s Iceberg cryostat (2,596 liters) confirmed scalability, with 3 kg of Li-FAU reducing N₂ contamination from ~5 ppm to <1 ppm over 96 hours cycles without active circulation. This presentation will detail the research methods, test setups, and results, showcasing the potential of Li-FAU as an alternative to Molecular Sieve 4A for large-scale LAr systems. This advancement enhances DUNE's precision and demonstrates the impact of international collaboration on cryogenic research.

Doubnik, Roza [Fermilab]↗
DOE OSTI2026

The S-PLUS Fifth Data Release: Over 4500 Square Degrees of the Southern Sky and a Multicolor View of the Hydra and Antlia Galaxy Clusters

Abstract We present the fifth data release (DR5) of the Southern Photometric Local Universe Survey (S-PLUS), covering 4592 deg 2 across 2491 fields. Observations were conducted with the T80-South, a Brazilian robotic telescope equipped with the Javalambre 12-filter system, containing five broadband and seven narrowband filters. Data products feature FITS images and extensive catalogs containing fluxes, magnitudes, and shape parameters for over 113 million detections. In addition, several value-added catalogs are provided, offering photometric redshifts (photo- zs ), object classifications, masks, and extinction coefficients. For the first time, this release includes coverage of 110 deg 2 along the Galactic disk, facilitating new research into Galactic structure and stellar populations. The release also provides full coverage of the Hydra Supercluster and numerous other nearby clusters with improved data reduction and calibration, enhancing photo- z accuracy, which is vital for large-scale structure studies. A preliminary analysis of the Hydra and Antlia galaxy clusters up to 5 × R 200 yields an updated catalog of 1706 cluster members based on both spectroscopic and high-quality photo- zs . Our photometric data shows that both clusters have a similar proportion of galaxies with an H α excess relative to their clustercentric distance, though Hydra has a higher fraction near its center. Additionally, the spatial distribution of all objects in our sample highlights a bridge connecting both clusters. We verify that S-PLUS DR5 provides a solid foundation for future scientific investigations, ranging from solar system studies to cosmology.

Vinicius Rodrigues de Lima, Erik [Universidade de ↗
DOE OSTI2020

High Efficiency Silicon Module Degradation - From Atoms to Systems: Preprint

For PV to be cost competitive with traditional energy sources reliability is of critical importance. Historically, PV reliability has focused on the module packaging because degradation and failure modes were directly linked to the packaging. Today, in addition to module packaging cell related reliability issues can be observed. We show that silicon heterojunction (SHJ) degradation is directly linked to the re-distribution of hydrogen (H) near the interface between the amorphous-silicon (a-Si) and silicon bulk. PERC modules show a similar decline in carrier lifetime indicating that not the packaging but the cells are also changing during field exposure. Examination of a stressed PERC cell showed a similar H redistribution in the cell. Understanding the degradation mechanism at the atomic level is important in facilitating possible mitigating mechanisms and more accurately projecting performance.

degradation↗
DOE OSTI2021

Colossal Grains for a New Structural Paradigm in Thin-Film Photovoltaics

II-VI based thin-film photovoltaics (PV) have experienced substantial commercial success on a foundation of fast large-scale deposition and processing. This type of processing, regardless of material type, nearly always results in small grain (nm to several um diameters) polycrystalline material that, if not for effective grain boundary (GB) and defect passivation, would severely limit PV performance. In the case of CdTe based PV technology, the nearly ubiquitous CdCl2 treatment is used, in part, to passivate the polycrystalline p-type absorber even though Cl is known to (and used to) compensate p-type II-VI materials. Given that VOC is still the most limited performance metric and it can only be improved through higher p-type absorber concentrations, CdCl2 treatments may be holding the technology back. In this talk, we will discuss results related to a process by which small grain CdSeTe material is rapidly transformed into very large grain material (100-1000um diameters, Fig. 1a). This explosive recrystallization, which we have termed colossal grain growth (CGG), occurs by a Cl free process with thin films (<10um) deposited using the same fast deposition techniques the industry has relied on for more than a decade. Our modeling suggests that GB recombination becomes significantly less important at these grain sizes and thus may eliminate the need for a CdCl2 treatment. This result is complimented by previous results of epitaxial growth at high rates on single crystal seed layers. Thin CdSeTe CGG seed layers can be used for rapid epitaxy of CdTe to complete a standard device stack (Fig.1b). This is an optimistic view and the current limitations and challenges related to this process and these materials will also be discussed, including alloy and substrate roughness sensitivity, intragrain material quality, and complex defect chemistry. These challenges are not insignificant but overcoming them may enable a new structural paradigm for thin-film PV.

CdTe↗
DOE OSTI2022

Investigating the Role of Copper in Arsenic Doped CdSeTe Photovoltaic Devices

As part of NREL's development of arsenic doped CdSeTe devices, co-doping with copper has become a common practice and, despite little difference in carrier concentration (often ~1016 cm-3), co-doped devices regularly show improved Voc. Given the critical importance of improving Voc, we are investigating this trend with a wide variety of characterization techniques including SEM, EBSD, SIMS, PL, CL, XPS, TRPL, JVT, KPFM, and DLTS. Together these indicate that Cu facilitates improved absorber-buffer interface properties and potentially improved bulk absorber characteristics, though specific mechanisms have not yet been determined. Despite the improved performance of co-doped devices, Voc is still far below its potential, and we explore the possibility that this limitation is the result of low buffer doping in conjunction with high absorber doping.

arsenic doping↗
DOE OSTI2022

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si cell front metallization. Our previous work showed that the I-V measurement of individual cells demonstrated exclusively the cell Rs degradation, and the "beads pattern" of electroluminescence indicated the degradation at the Ag grid of front metallization. Scanning spreading resistance microscopy (SSRM) imaging, which is based on the contact mode of atomic force microscopy and taken on the cross-sections of Ag/Si contact, revealed the electrical conduction pathway of Ag particles in point or small area contact with Si cell emitter. The SSRM results illustrated that the number of electrical contacts in the degraded cell decreased largely compared with the unaffected cell, demonstrating the direct cause of the Rs degradation. This reduction in electrical contact in the degraded cell could be caused by a structural change in the Ag grid during long-term field service: The Ag particles in contact with Si aggregate into the Ag bulk and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 m blocks the current conduction from cell emitter to the Ag grid. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the different degradation susceptibility during the long-term field service. Our results demonstrate an example of the multi-scale characterization approach for understanding photovoltaic degradation mechanisms.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2022

Metastability and Degradation of CdTe Solar Cells Investigated by nm-Scale Electrical Potential Imaging

We report on investigations of reversible metastability and irreversible degradation of MZO/CdSeTe/CdTe devices from the perspective of electric field across the device using Kelvin probe force microscopy (KPFM). The device showed reversible transitions between the light-soak state (LSS) with the best device efficiency and the dark-soak state (DSS) with an inferior efficiency. However, it showed an irreversible degradation state (DgS) driven by long-hour light soaking at an elevated temperature. The nm-scale KPFM electric field imaging on cross-sections of the devices revealed different anomalous electric field profiles. The electric field at the LSS exhibits a main peak inside the CdSeTe layer but not at the MZO/CdSeTe heterointerface, demonstrating that working junction of the device is a buried homojunction (BHJ). At the DSS, a second electric field peak was observed at the MZO/CdSeTe interface with a similar strength to the main BHJ, which probably caused the decrease in fill factor at the DSS. At the DgS, the electric field peak at the MZO/CdSeTe interface increased significantly and a third electric field was measured at the back contact of the device. Device modeling using COMSOL and in alignment with both the electric field and device current-voltage curves suggest that a slightly low n-doped CdSeTe in the region near the MZO/CdSeTe interface caused the BHJ, and that either a loss of MZO doping or increase of the conduction band offset spike due to long-term stress caused the fill factor-dominated degradation and the increased electric field near the MZO/CdSeTe interface at the DgS. The former, MZO doping decrease, is more plausible by referring the related literature.

BHJ↗
DOE OSTI2023

Accelerated Aging of PV Cables - The Development of Methods Towards Combined-Accelerated Stress Testing

PV cables allow the collection and distribution of electricity from modules to the energy grid. Durable cabling allows continuous operation of PV installations. Cables with a life less than that of the modules must be replaced - reducing electricity generation and adding to the system operating expense. We have examined the durability of a variety of representative cable samples using artificial UV weathering (IEC TS 62788-7-2) and combined accelerated stress testing (C-AST). Jackets in this study include PV-rated (polyolefin), building wire (PVC/PA), and multi-conductor (rubber, as in PV trackers), with some examples of black and red cables. Characterizations at read points include appearance (camera and optical microscope), surface roughness (linear profilometry), instrumented indentation, surface morphology (SEM), chemical composition (EDS), thermal decomposition (TGA), phase transition (DSC), crystalline structure (WAXS), and polymer chemical structure (FTIR). Complimentary examinations confirm damage to the external and interior layer(s) of less durable samples, including changes in morphology (e.g., cracking), chemistry (e.g., oxidation), structure, and mechanical performance (e.g., through-thickness modulus and hardness). The results may be generally compared to other examples from the field (PV installations) or after accelerated testing (IEC 61215). The methods in this study are presently being applied in a follow-on C-AST study, incorporating both dynamic and kinematic fixtures.

balance of systems↗
DOE OSTI2024

Overview of collaborative research between UNICAMP in Brazil and Fermilab in cryogenics

The Long-Baseline Neutrino Facility (LBNF) situated at the Sanford Underground Research Facility (SURF) in Lead, South Dakota, serves as the host for the Deep Underground Neutrino Experiment (DUNE), employing cryostats with nearly 70,000 metric tons of high purity liquid argon (LAr). The integrity of LAr quality is pivotal in determining the electron lifetime within DUNE, directly impacting its signal-to-noise ratio. Specifically, Far Detector 1 (FD-1) in cryostat 1 requires an electron lifetime over 3 ms within its 3.5 m drift, corresponding to less than 100 parts-per-trillion (ppt) Oxygen equivalent contamination. Far Detector 2 (FD-2) in cryostat 2 demands over 6 ms electron lifetime within its 6.0 m drift, corresponding to less than 50 ppt Oxygen equivalent contamination. Nitrogen (N$_2$) absorption of LAr scintillation light, known as quenching, necessitates N$_2$ contamination in LAr to remain below 1 ppm to minimize photon loss and enhance energy reconstruction. Studies indicate that at 1 ppm N$_2$, approximately 20% of scintillation light is lost, highlighting the importance of minimizing N$_2$ contamination.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

High-data throughput reconfigurable computing platform

A reconfigurable computing platform includes a reconfigurable computing device, electro-optical transceiver, and first voltage converter disposed on a multilayer board. The electro-optical transceiver converts an optical signal at least one of to and from an electrical signal, and the electrical signal is operatively coupled to the reconfigurable computing device. The electro-optical transceiver is disposed in proximity to the reconfigurable computing device, and the first voltage converter is operatively coupled to a common voltage distributed around a periphery of the multilayer board. The first voltage converter converts the common voltage to a first operating voltage, and the first voltage converter is disposed in proximity to the reconfigurable computing device. The first operating voltage is provided to the reconfigurable computing device as a first power source. A reconfigurable computing system includes a plurality of reconfigurable computing platforms operatively coupled together using an optical signal. A corresponding method of providing a reconfigurable computing platform is also disclosed.

Tang, Shaochun↗