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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Advanced methods for preparation and characterization of infrared detector materials

Differential thermal analysis data were obtained on mercury cadmium telluride alloys in order to establish the liquidus temperatures for the various alloy compositions. Preliminary theoretical analyses was performed to establish the ternary phase equilibrium parameters for the metal rich region of the phase diagram. Liquid-solid equilibrium parameters were determined for the pseudobinary alloy system. Phase equilibrium was calculated and Hg(l-x) Cd(x) Te alloys were directionally solidified from pseudobinary melts. Electrical resistivity and Hall coefficient measurements were obtained.

Lehoczky, S. L.↗
NASA NTRS1981

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. III - Defect structure of undoped Hg0.6Cd0.4Te

Hall effect measurements were carried out on undoped Hg0.6Cd0.4Te crystals quenched to room temperature subsequent to equilibration at temperatures varying from 450 to 720 C under various partial pressures of Hg. The variation of the hole concentration as a function of the partial pressure of Hg indicates that the native acceptor defects are doubly ionized. Native donor defects are found to be negligible in concentration and the p-type to n-type conversion is shown to be due to residual donors and not due to native donor defects. Thermodynamic constant for the incorporation of the doubly ionized native acceptor defect has been established.

Vydyanath, H. R.↗
NASA NTRS1982

Compensation mechanism in liquid encapsulated Czochralski GaAs Importance of melt stoichiometry

It is shown that the key to reproducible growth of undoped semi-insulating GaAs by the liquid encapsulated Czochralski (LEC) technique is the control over the melt stoichiometry. Twelve crystals were grown from stoichiometric and nonstoichiometric melts. The material was characterized by secondary ion mass spectrometry, localized vibrational mode far infrared spectroscopy, Hall-effect measurements, optical absorption, and photoluminescence. A quantitative model for the compensation mechanism in the semi-insulating material was developed based on these measurements. The free carrier concentration is controlled by the balance between EL2 deep donors and carbon acceptors; furthermore, the incorporation of EL2 is controlled by the melt stoichiometry, increasing as the As atom fraction in the melt increases. As a result, semi-insulating material can be grown only from melts above a critical As composition. The practical significance of these results is discussed in terms of achieving high yield and reproducibility in the crystal growth process.

Holmes, D. E.↗
NASA NTRS1982

Doping behavior of iodine in Hg/0.8/Cd/0.2/Te

The defect state prevailing in iodine doped single-crystal samples of Hg0.8Cd0.2Te, annealed at 450-600 C in Hg vapor, has been deduced from Hall effect measurements on samples cooled to 77 K from the annealing temperature. Results are found to be similar to those previously obtained for iodine doped CdS, i.e. iodine acts as a single donor occupying Te lattice sites with a fraction paired with the native acceptor defects. The concentration of iodine on tellurium lattice sites increases with the partial pressure of Hg, whereas that of the pair species increases as the partial pressure of Hg decreases.

Vydyanath, H. R.↗
NASA NTRS1984

Conduction mechanism in boron carbide

Electrical conductivity, Seebeck-coefficient, and Hall-effect measurements have been made on single-phase boron carbides, B(1-x)C(x), in the compositional range from 0.1 to 0.2 X, and between room temperature and 1273 K. The results indicate that the predominant conduction mechanism is small-polaron hopping between carbon atoms at geometrically inequivalent sites.

Wood, C.↗
NASA NTRS1985

Inference of high-latitude ionization and conductivity from AE-C measurements of auroral electron fluxes

Electron fluxes in the kilovolt energy range measured by the AE-C satellite have been used to infer the latitudinal distribution of ionization at high latitudes in the altitude range 90 to 200 km. These distributions are compared with simultaneous measurements of electron density by the Chatanika incoherent scatter radar. The study was based on more than 120 electron density profiles obtained on three different nights at magnetic local times between 0200 and 0400. The calculated distributions agree very well with the altitude and latitude distributions measured by the radar. The only obvious difference was the presence in the radar data of additional ionization produced by solar illumination. A comparison was also conducted of the height-integrated electrical conductivities computed from the measured profiles and those inferred from the satellite measurements. For Hall and Pedersen conductances greater than 5 mhos, the agreement is within 25 percent. The data were also used to deduce the altitude profile of the effective recombination coefficient. This profile agrees well with the results of previous studies.

Vondrak, R.↗
NASA NTRS1987

Material growth and characterization for solid state devices

During this period InGaAs and InGaAsP were grown on (100)InP by liquid phase electroepitaxy (LPEE). Results of the epitaxial growth of InGaAs on sputtered quartz masked substrates are presented. The resulting surface morphology can be related to the current density distribution near the edges of a masked pattern. The quaternary InGaAs was grown with compositions corresponding to 1.3 micron and 1.5 micron emission wavelengths. Growth rates were found to be linearly dependent upon current density, and a strong dependence upon composition was noted. These compositions lie in the miscibility gap region of the alloy phase diagram at the 645 C growth temperature. Growths were performed at 685 C to avoid the miscibility gap. Epilayers were characterized by photoluminescence, X-ray diffraction, secondary ion mass spectrometry, and Hall effect measurements. Aluminum oxide was deposited on silicon and InGaAs substrates for the characterization of this material as an insulator in a field effect transistor structure. It was determined that the results did not warrant further work with the deposition from an aluminum isopropoxide source. A metallographic vapor phase epitaxy system installation is nearing completion for use in hybrid III-V semiconductor epilayer growths.

Collis, Ward J.↗
NASA NTRS1988

Infrared absorption study of neutron-transmutation-doped germanium

Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements, the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process was studied. The results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated Ge-70 atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 C. It is shown that this is due to donor-radiation-defect complex formation. Again, recoil does not play a significant role.

Park, I. S.↗
NASA NTRS1989

The influence of Sb doping on the growth and electronic properties of GaAs(100) and AlGaAs(100)

Isoelectronic doping using antimony has been shown to reduce traps and improve material properties during epitaxial growth of Si doped GaAs(100) and AlGaAs(100). In this study, the effect of the antimony dopant on the optimal growth temperature is examined with the aim of producing high-quality heterostructures at lower temperatues. High-quality films of GaAs and AlGaAs have been grown by molecular-beam epitaxy at the normal growth temperatures of 610 and 700 C, respectively, and 50-100 C below this temperature using varying small amounts of Sb as a dopant. Electrical properties of the films were then examined using Hall mobility measurements and deep-level transient spectroscopy.

Jamison, K. D.↗
NASA NTRS1992

Automated High-Temperature Hall-Effect Apparatus

Automated apparatus takes Hall-effect measurements of specimens of thermoelectric materials at temperatures from ambient to 1,200 K using computer control to obtain better resolution of data and more data points about three times as fast as before. Four-probe electrical-resistance measurements taken in 12 electrical and 2 magnetic orientations to characterize specimens at each temperature. Computer acquires data, and controls apparatus via three feedback loops: one for temperature, one for magnetic field, and one for electrical-potential data.

Parker, James B.↗
NASA NTRS2012

Effect of Rare Earth Elements (Er, Ho) on Semi-Metallic Materials (ScN) in an Applied Electric Field

The development of materials and fabrication technology for field-controlled spectrally active optics is essential for applications such as membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras and flat-panel displays. The dopants of rare earth elements, in a host of optical systems, create a number of absorption and emission band structures and can easily be incorporated into many high quality crystalline and amorphous hosts. In wide band-gap semiconductors like ScN, the existing deep levels can capture or emit the mobile charges, and can be ionized with the loss or capture of the carriers which are the fundamental basis of concept for smart optic materials. The band gap shrinkage or splitting with dopants supports the possibility of this concept. In the present work, a semi-metallic material (ScN) was doped with rare earth elements (Er, Ho) and tested under an applied electric field to characterize spectral and refractive index shifts by either Stark or Zeeman Effect. These effects can be verified using the UV-Vis spectroscopy, the Hall Effect measurement and the ellipsometric spectroscopy. The optical band gaps of ScN doped with Er and doped with Ho were experimentally estimated as 2.33eV and 2.24eV ( 0.2eV) respectively. This is less than that of undoped ScN (2.5 0.2eV). The red-shifted absorption onset is a direct evidence for the decrease of band gap energy (Eg), and the broadening of valence band states is attributable to the doping cases. A decrease in refractive index with an applied field was observed as a small shift in absorption coefficient using a variable angle spectroscopic ellipsometer. In the presence of an electric field, mobile carriers are redistributed within the space charge region (SCR) to produce this electro-refractive effect. The shift in refractive index is also affected by the density and location of deep potential wells within the SCR. In addition, the microstructure change was observed by a TEM analysis. These results give an insight for future applications for the field-controlled spectrally active material systems.

Kim, Hyunjung↗
NASA NTRS2012

Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

The purpose of this investigation is to develop the fundamental materials and fabrication technology for field-controlled spectrally active optics that are essential for industry, NASA, and DOD applications such as: membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras, flat-panel displays, etc. ScN and AlN thin films were fabricated on c-axis Sapphire (0001) or quartz substrate with the RF and DC magnetron sputtering. The crystal structure of AlN in fcc (rocksalt) and hcp (wurtzite) were controlled. Advanced electrical characterizations were performed, including I-V and Hall Effect Measurement. ScN film has a free carrier density of 5.8 x 10(exp 20)/per cubic centimeter and a conductivity of 1.1 x 10(exp 3) per centimeter. The background ntype conductivity of as-grown ScN has enough free electrons that can readily interact with the photons. The high density of free electrons and relatively low mobility indicate that these films contain a high level of shallow donors as well as deep levels. Also, the UV-Vis spectrum of ScN and AlN thin films with rare earth elements (Er or Ho) were measured at room temperature. Their optical band gaps were estimated to be about 2.33eV and 2.24eV, respectively, which are obviously smaller than that of undoped thin film ScN (2.4eV). The red-shifted absorption onset gives direct evidence for the decrease of band gap (Eg) and the energy broadening of valence band states are attributable to the doping. As the doped elements enter the ScN crystal lattices, the localized band edge states form at the doped sites with a reduction of Eg. Using a variable angle spectroscopic ellipsometer, the decrease in refractive index with applied field is observed with a smaller shift in absorption coefficient.

Kim, Hyun-Jung↗
NASA NTRS1985

Automated ac galvanomagnetic measurement system

An automated, ac galvanomagnetic measurement system is described. Hall or van der Pauw measurements in the temperature range 10-300 K can be made at a preselected magnetic field without operator attendance. Procedures to validate sample installation and correct operation of other system functions, such as magnetic field and thermometry, are included. Advantages of ac measurements are discussed.

Szofran, F. R.↗
NASA NTRS2004

Momentum Flux Measurements Using an Impact Thrust Stand

A device has been developed to measure the force caused by a beam of charged and neutral particles impacting a target plate. This device, an impact thrust stand, was developed to allow thrusters, during early stages of development, to be quickly and easily exhausted and compared to other thrusters. Since some thruster concepts are tested using laboratory equipment that is heavy and cumbersome, measuring the momentum flux of the particles in the plume can be much simpler than placing the entire thruster on a thrust stand. Conservation of momentum requires the momentum flux measured in the plume to be related to the thrust produced by the thruster. The impact thrust stand was designed to be placed in the plume of an electric thruster and has been tested and compared to the thrust measured from a Hall thruster placed on a pendulum thrust stand. Force measurements taken at several axial locations in the magnetic nozzle region of the Variable Specific Impulse Magnetoplasma Rocket will be presented.

Chavers, Greg↗
NASA NTRS2002

Sputtering Erosion Measurement on Boron Nitride as a Hall Thruster Material

The durability of a high-powered Hall thruster may be limited by the sputter erosion resistance of its components. During normal operation, a small fraction of the accelerated ions will impact the interior of the main discharge channel, causing its gradual erosion. A laboratory experiment was conducted to simulate the sputter erosion of a Hall thruster. Tests of sputter etch rate were carried out using 300 to 1000 eV Xenon ions impinging on boron nitride substrates with angles of attack ranging from 30 to 75 degrees from horizontal. The erosion rates varied from 3.41 to 14.37 Angstroms/[sec(mA/sq cm)] and were found to depend on the ion energy and angle of attack, which is consistent with the behavior of other materials.

Britton, Melissa↗
NASA NTRS2016

Extended Magnetohydrodynamics with Embedded Particle-in-Cell Simulation of Ganymede's Magnetosphere

We have recently developed a new modeling capability to embed the implicit particle-in-cell (PIC) model iPIC3D into the Block-Adaptive-Tree-Solarwind-Roe-Upwind-Scheme magnetohydrodynamic (MHD) model. The MHD with embedded PIC domains (MHO-EPIC) algorithm Is a two-way coupled kinetic-fluid model. As one of the very first applications of the MHD-EPIC algorithm, we simulate the Interaction between Jupiter's magnetospherlc plasma and Ganymede's magnetosphere. We compare the MHO-EPIC simulations with pure Hall MHD simulations and compare both model results with Galileo observations to assess the Importance of kinetic effects In controlling the configuration and dynamics of Ganymede's magnetosphere. We find that the Hall MHD and MHO-EPIC solutions are qualitatively similar, but there are significant quantitative differences. In particular. the density and pressure inside the magnetosphere show different distributions. For our baseline grid resolution the PIC solution is more dynamic than the Hall MHD simulation and it compares significantly better with the Galileo magnetic measurements than the Hall MHD solution. The power spectra of the observed and simulated magnetic field fluctuations agree extremely well for the MHD-EPIC model. The MHO-EPIC simulation also produced a few flux transfer events (FTEs) that have magnetic signatures very similar to an observed event. The simulation shows that the FTEs often exhibit complex 3-0 structures with their orientations changing substantially between the equatorial plane and the Galileo trajectory, which explains the magnetic signatures observed during the magnetopause crossings. The computational cost of the MHO-EPIC simulation was only about 4 times more than that of the Hall MHD simulation.

Toth, Gabor↗
NASA NTRS1987

Electronic transport properties of hot-pressed B6Si

Measurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300 K to -1300 K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.

Wood, C.↗