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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5

Fast process flow, on-wafer interconnection and singulation for MEPV

A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality of metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.

36 MATERIALS SCIENCE↗

Fast process flow, on-wafer interconnection and singulation for MEPV

A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality of metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.

36 MATERIALS SCIENCE↗

High-voltage push to mate electrical interconnect

A high-voltage self-aligning push to mate electrical interconnect device is provided. The electrical interconnect device includes a housing with a mating end and a receiving end. The interconnect also includes an insulator bushing configured to be affixed to the receiving end of the housing. The interconnect also includes a center pin disposed within the housing. The center pin extends from the mating end of the housing to the receiving end of the housing. The interconnect also includes a connector socket disposed within the insulator bushing and which is in electrical communication with the center pin. The interconnect also includes an alignment sleeve including a chamfered mating funnel defining a void configured to accept and surround the housing and at least a portion of insulator bushing.

Martinez, David K.↗

Failure stress comparison of different pairings of Ag-plating and reflow-oven-processed pressureless-sintered-Ag interconnects

Here, sintered-silver is a candidate material to supplant solders for interconnects in power electronic packaging for many reasons including its desirably high electrical and thermal conductivities and compliance to Restriction of Hazardous Substances (RoHS) guidelines. The shear failure stress of interconnects though is limited by whatever constituent is the weakest, and that includes any employed plating. In the present study, silver-platings were processed electrolytically, electrolessly, and through sputter deposition and their influence on the entire “interconnect system” shear strength was examined. Test sets employing gold plating and no plating were included for comparison and to aid interpretation. Ambient-air, reflow-oven-processed, pressureless-sintered-silver interconnects were identically fabricated with all plating test sets. It was found that all considered silver-plating methods produced consistently strong (characteristic failure stresses > 55 MPa) sintered-silver interconnects. Because failures tended to be adhesive in all six sets, differences in failure stress among the silver-plated sets and the gold-plated or unplated sets were likely due to differences in the adhesive strength of the sintered silver with silver-plating, gold-plating, or direct bonding with copper.

36 MATERIALS SCIENCE↗

Ferritic stainless steel interconnects for protonic ceramic electrochemical cell stacks: Oxidation behavior and protective coatings

Protonic ceramic fuel or electrolysis cells (PCFC/PCEC) have shown promising performance at intermediate temperatures. However, these technologies have not yet been demonstrated in a stack, hence the oxidation behavior of the metallic interconnect under relevant operating environments is unknown. In this work, ferritic stainless steels 430 SS, 441 SS, and Crofer 22 APU were investigated for their use as interconnect materials in the PCFC/PCEC stack. Specifically, the bare metal sheets were exposed to a humidified air environment in the temperature range from 450 °C to 650 °C, to simulate their application in a PCFC cathode or PCEC anode. Breakaway oxidation with rapid weight gain and Fe outward diffusion/oxidation was observed on all the selected stainless steel materials. A protective coating is deemed necessary to prevent the metallic interconnect from oxidizing. To mitigate the observed breakaway oxidation, state-of-the-art protective coatings, Y 2 O 3 , Ce 0.02 Mn 1.49 Co 1.49 O 4 , CuMn 1.8 O 4 and Ce/Co, were applied to the stainless steel sheets and their oxidation resistance was investigated. Dual atmosphere testing further validated the effectiveness of the protective coatings in realistic PCFC/PCEC environments, with a hydrogen gradient across the interconnect. Several combinations of metal and coating material were found to be viable for use as the interconnect for PCFC/PCEC stacks.

25 ENERGY STORAGE↗

Supervised Learning for Distribution Secondary Systems Modeling: Improving Solar Interconnection Processes

The current interconnection process and hosting capacity analysis for distributed energy resources (DERs), such as photovoltaics (PV) and battery energy storage systems, are based on analyzing grid network constraints (voltage and thermal) using only medium-voltage distribution network models. This is because most utilities do not have secondary low-voltage system models that connect service transformers and residential customers. This is important because in many cases the main impact of interconnecting DERs could occur on the low-voltage distribution systems. This paper proposes a supervised learning method to approximate local secondary models to improve the interconnection process. The proposed supervised learning method includes a decision tree model that predicts the secondary topology and a logistic regression model that predicts conductor types. The case studies demonstrate the benefits of including secondary low-voltage circuits in the interconnection process. We report the proposed modeling methodology is readily scalable and thus can reduce the cost and effort of PV interconnection for the industry and stakeholders.

14 SOLAR ENERGY↗

Nanometal-Interconnected Carbon Conductors (NICCS) for Advanced Electric Machines (RIT Final Technical Report)

Recent advancements in carbon nanotube (CNT) research have enabled lightweight, conductive wires as a transformative technology. Metal-carbon nanotube (CNT) hybrid conductors aim to combine the high conductivity of traditional metals with the low mass and temperature coefficient of resistance (TCR) of carbon nanotubes. The high conductivity of copper makes it a promising candidate to combine with CNTs in a hybrid structure, but there is limited physical and electrical interaction between copper and CNTs. The use of an interfacial layer offers one method of improving the interconnection of a Cu-CNT hybrid conductor. Over the course of this grant, a joule heating-driven chemical vapor deposition (CVD) technique was developed to deposit nanometal seeds throughout a porous, low-density (0.12 g/cm 3 , ~10 tex or mg/m) CNT roving template. Modification of the applied current to the CNT roving allows for the tuning of depositions towards either hot-spot site-specificity or overall uniformity. The effects of temperature, pressure, precursor mass, and the interval of applied current were investigated, demonstrating nanometal depositions ranging from less than 5 % w/w to over 85 % w/w. The versatility of CVD allows for a wide variety of metals to be deposited including copper, titanium, nickel, silver, tungsten, palladium, platinum, ruthenium, rhodium, and iridium. One preferred demonstration involved using platinum depositions to improve the electrical properties of metal-seeded CNTs across all mass loadings studied. Moreover, when the metal-seeded CNT wires were electroplated with copper, densified, and annealed under hydrogen/argon; the result was a Cu-CNT hybrid conductor with the highest conductivities reported to date. The good interconnection of the metal and CNT portions results in a stable conductor. An electrical conductivity of 16-20 MS/m was achieved for multiple Cu-CNT hybrid conductors at 150 °C, which exceeds the program goal for conductivity of greater than 15 MS/m for a 1 m long CNT wire. Overall, the research outcomes from the project showed improvements in CNT wire fabrication from roll-to-roll CVD grown carbon nanotube wires using nanometal interconnects to bridge CNT-to-CNT junctions, thus mitigating network contact resistances. Advanced nanometal interconnected carbon conductors (NICCs) were developed as a means to achieve novel light-weight wiring appropriate for applications that require the conductivity of metallic (i.e., Cu, Al, etc.) wires at elevated temperatures. High conductivity, low TCR electrical conductors such as the nanometal interconnected Cu-CNT hybrids have numerous future applications towards high efficiency motors, generators, and transformers. Specifically, the advanced wires have the ability to operate at lower resistance during conditions for standard electric motors at 150 °C, which would improve the electrical efficiency while lowering energy needs.

36 MATERIALS SCIENCE↗

Multi‐Objective Optimization for Rapid Identification of Novel Compound Metals for Interconnect Applications

Abstract Interconnect materials play the critical role of routing energy and information in integrated circuits. However, established bulk conductors, such as copper, perform poorly when scaled down beyond 10 nm, limiting the scalability of logic devices. Here, a multi‐objective search is developed, combined with first‐principles calculations, to rapidly screen over 15,000 materials and discover new interconnect candidates. This approach simultaneously optimizes the bulk electronic conductivity, surface scattering time, and chemical stability using physically motivated surrogate properties accessible from materials databases. Promising local interconnects are identified that have the potential to outperform ruthenium, the current state‐of‐the‐art post‐Cu material, and also semi‐global interconnects with potentially large skin depths at the GHz operation frequency. The approach is validated on one of the identified candidates, CoPt, using both ab initio and experimental transport studies, showcasing its potential to supplant Ru and Cu for future local interconnects.

Chemistry↗

Chemically interconnected light-weight 3D-carbon nanotube solid network

Owing to the weak physical interactions such as van der Waals and π-π interactions, which hold nanotubes together in carbon nanotube (CNT) bulk structures, the tubes can easily slide on each other. In creating covalent interconnection between individual carbon nanotube (CNT) structures we saw remarkable improvements in the properties of their three-dimensional (3D) bulk structures. The creation of such nanoengineered 3D solid structures with improved properties and low-density remains one of the fundamental challenges in real-world applications. We also report the scalable synthesis of low-density 3D macroscopic structure made of covalently interconnected nanotubes using free-radical polymerization method after functionalized CNTs with allylamine monomers. The resulted interconnected highly porous solid structure exhibits higher mechanical properties, larger surface area and greater porosity than non-crosslinked nanotube structures. To gain further insights into the deformation mechanisms of nanotubes, fully atomistic reactive molecular dynamics simulations are used. Here we demonstrate one such utility in CO 2 uptake, whose interconnected solid structure performed better than non-interconnected structures.

36 MATERIALS SCIENCE↗

Impact of pore size, interconnections, and dynamic conductivity on the electrochemistry of vanadium pentoxide in well defined porous structures

Considering the tortuous, random porous nanostructures existing in many battery electrodes, it is essential to understand electronic and ionic behaviors in such a confined nanoscale porous geometry in which electron and ion transports can change dynamically. Here, we have carefully designed three dimensional (3D) interconnected porous electrode structures and performed experiments to probe how the ion and electron transport is impacted within these controlled geometries. By using anodized aluminum oxide as a template, we were able to fabricate both 1D array electrodes and 3D electrodes with varying numbers of interconnections, utilizing vanadium oxide (V 2 O 5 ) as the active material. We demonstrate that the inherent properties of the electrode material in combination with the structural properties of the electrodes can both positively and negatively impact electrochemical characteristics. Most notably, electrodes with seven interconnecting layers in their structure had 19.7% less capacity at 25C than electrodes with zero interconnecting layers, demonstrating the negative effect of interconnections combined with poor electronic conductivity of V 2 O 5 upon lithiation beyond one Li insertion. These results indicate that a careful consideration of the material and structural properties is needed for the design of high performance battery systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections

The use of 1/f noise measurements is explored for the purpose of finding faster techniques for electromigration (EM) characterization in advanced microelectronic interconnects, which also enable a better understanding of its underlying physical mechanisms. Three different applications of 1/f noise for EM characterization are explored. First, whether 1/f noise measurements during EM stress can serve as an early indicator of EM damage. Second, whether the current dependence of the noise power spectral density (PSD) can be used for a qualitative comparison of the defect concentration of different interconnects and consequently also their EM lifetime t50. Third, whether the activation energies obtained from the temperature dependence of the 1/f noise PSD correspond to the activation energies found by means of classic EM tests. In this paper, the 1/f noise technique has been used to assess and compare the EM properties of various advanced integration schemes and different materials, as they are being explored by the industry to enable advanced interconnect scaling. More concrete, different types of copper interconnects and one type of tungsten interconnect are compared. The 1/f noise measurements confirm the excellent electromigration properties of tungsten and demonstrate a dependence of the EM failure mechanism on copper grain size and distribution, where grain boundary diffusion is found to be a dominant failure mechanism.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Characterization of process-induced damage in Cu/low-k interconnect structure by microscopic infrared spectroscopy with polarized infrared light

Microscopic Fourier-transform infrared (FT-IR) spectra are measured for a Cu/low-k interconnect structure using polarized IR light for different widths of low-k spaces and Cu lines, and for different heights of Cu lines, on Si substrates. Although the widths of the Cu line and the low-k space are 70 nm each, considerably smaller than the wavelength of the IR light, the FT-IR spectra of the low-k film were obtained for the Cu/low-k interconnect structure. A suitable method was established for measuring the process-induced damage in a low-k film that was not detected by the TEM-EELS (Transmission Electron Microscope-Electron Energy-Loss Spectroscopy) using microscopic IR polarized light. Based on the IR results, it was presumed that the FT-IR spectra mainly reflect the structural changes in the sidewalls of the low-k films for Cu/low-k interconnect structures, and the mechanism of generating process-induced damage involves the generation of Si-OH groups in the low-k film when the Si-CH{sub 3} bonds break during the fabrication processes. The Si-OH groups attract moisture and the OH peak intensity increases. It was concluded that the increase in the OH groups in the low-k film is a sensitive indicator of low-k damage. We achieved the characterization of the process-induced damage that was not detected by the TEM-EELS and speculated that the proposed method is applicable to interconnects with line and space widths of 70 nm/70 nm and on shorter scales of leading edge devices. The location of process-induced damage and its mechanism for the Cu/low-k interconnect structure were revealed via the measurement method.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Apparent Fracture Toughness of Pressureless Sintered Silver Interconnects

This study uses three-point flexural testing to estimate the room-temperature apparent fracture toughness ( K Ic_app ) of a pressureless sintered-silver interconnect - a candidate material for use in power electronic devices. The K Ic_app estimation occurs via work-of-fracture measurement of a chevron-shaped sintered-silver joint centrally located in an “interconnect bend test specimen”. The chevron-shape was stencil-printed on a silver (Ag)-plated direct bonded copper (DBC) substrate, mated to an Ag-plated DBC substrate, and then sintered. The chevron-shape, used for decades in fracture mechanics examinations and in standardized tests of monolithic materials, enables controlled stable crack initiation and propagation that are prerequisites for valid K Ic_app estimation. The employed combination of an interconnect bend test specimen and bend test method is robust and simple, enables a means for interpreting the resistance to crack growth and delamination in an interconnect, provides a dependable way to judge the efficacies of sintered-silver processing conditions, and ultimately supports process optimization of sintered-silver interconnects.

36 MATERIALS SCIENCE↗

Queued Up: Characteristics of Power Plants Seeking Transmission Interconnection As of the End of 2021 [Slides]

Proposed large-scale electric generation and storage projects must apply for interconnection to the bulk power system via interconnection queues. While most projects that apply for interconnection are not subsequently built, data from these queues nonetheless provide a general indicator for mid-term trends in developer interest. Berkeley Lab compiled and analyzed data from all seven ISOs/RTOs in concert with 35 non-ISO utilities, representing an estimated 85% of all U.S. electricity load. We include all "active" projects in these generation interconnection queues through the end of 2021, as well as data on "operational" and "withdrawn" projects where those data are available. We find that the amount of new electric capacity in these queues is growing dramatically, with over 1,400 gigawatts (GW) of total generation and storage capacity now seeking connection to the grid (over 90% of which is for zero-carbon resources like solar, wind, and battery storage). Solar (676 GW) and battery storage (~420 GW) are – by far – the fastest growing resources in the queues; combined they accounted for nearly 85% of new capacity entering the queues in 2021. Substantial wind (247 GW) capacity is also seeking interconnection, 31% of which is for offshore projects (77 GW). In total, about 930 GW of zero-carbon generating capacity is currently seeking transmission access, as is 74 GW of natural gas capacity. Hybrids now comprise a large – and increasing – share of proposed projects, particularly in CAISO and the non-ISO West. 286 GW of solar hybrids (primarily solar+battery) and 19 GW of wind hybrids are currently active in the queues; nearly half of battery storage in the queues is paired with generation. However, much of this proposed capacity will be withdrawn from the queues and not built. Among a subset of queues for which data are available, only 23% of the projects seeking connection from 2000 to 2016 have subsequently been built. Completion percentages appear to be declining and are even lower for wind and solar than other resources. Additionally, wait times are on the rise: for the regions with available data, the typical duration from connection request to commercial operation increased from ~2.1 years for projects built in 2000-2010 to ~3.7 years for those built in 2011-2021.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Fine Pitch Bonding for High Density Interconnects

CTE (coefficient of thermal expansion) mismatch between two wafers has potential for brittle failure when large areas are bonded on top of one another (wafer to wafer or wafer to die bonds). To address this type of failure, we proposed patterning a polymer around metallic interconnects. For this project, utilized benzo cyclobutene (BCB) to form the bond and accommodate stress. For the metal interconnects, we used indium. To determine the benefits of utilizing BCB, mechanical shear testing of die bonding with just BCB were compared to die bonded just with oxide. These tests demonstrated that BCB, when cured for only 30 minutes and bonded at 200°C, the BCB was able to withstand shear forces similar to oxide. Furthermore, when the BCB did fail, it experienced a more ductile failure, allowing the silicon to crack, rather than shatter. To demonstrate the feasibility of using BCB between indium interconnects, wafers were pattered with layers of BCB with vias for indium or ENEPIG (electroless nickel, electroless palladium, immersion gold). Subsequently, these wafers were pattered with a variety of indium or ENEPIG interconnect pitches, diameters, and heights. These dies were bonded under a variety of conditions, and those that held a bond, were cross-sectioned and imaged. Images revealed that certain bonding conditions allow for interconnects and BCB to achieve a void-less bond and thus demonstrate that utilizing polymers in place of oxide is a feasible way to reduce CTE stress.

36 MATERIALS SCIENCE↗

Fuel cell electrode interconnect contact material encapsulation and method

A fuel cell stack includes a plurality of fuel cell cassettes each including a fuel cell with an anode and a cathode. Each fuel cell cassette also includes an electrode interconnect adjacent to the anode or the cathode for providing electrical communication between an adjacent fuel cell cassette and the anode or the cathode. The interconnect includes a plurality of electrode interconnect protrusions defining a flow passage along the anode or the cathode for communicating oxidant or fuel to the anode or the cathode. An electrically conductive material is disposed between at least one of the electrode interconnect protrusions and the anode or the cathode in order to provide a stable electrical contact between the electrode interconnect and the anode or cathode. An encapsulating arrangement segregates the electrically conductive material from the flow passage thereby, preventing volatilization of the electrically conductive material in use of the fuel cell stack.

30 DIRECT ENERGY CONVERSION↗

Radio frequency tuning using a multichip module electrical interconnect structure

A method for tuning a resonant frequency of wireless communication circuitry on a multichip module including a plurality of chips includes applying an electrical insulator to an upper surface of the multichip module; creating a plurality of openings in the electrical insulator, each opening being positioned at a successive one of the bond pads to be electrically connected to create a plurality of exposed bond pads; applying metal to each exposed bond pad to form a successive one of a plurality of interconnect bases; removing a portion of the layer of photoresist to create a plurality of bridge supports, each bridge support positioned between a successive pair of interconnect bases; applying metal to each bridge support and associated interconnect bases to form a successive one of the interconnect traces; removing the bridge supports; and disconnecting one or more of the interconnect traces as necessary to obtain a target resonant frequency.

Young, Barbara Diane↗

Communication engine for hybrid interconnect technologies

Systems, apparatuses, and methods for dynamically selecting between wired and wireless interconnects for sending packets are disclosed. A system includes at least a hybrid communication engine and a plurality of interconnects for connecting to various end-points. The communication engine dynamically discovers and utilizes the best interconnect technology available in between given end-points. The communication engine dynamically chooses the physical interconnect that is best suited at any given time to send data from one source to one or multiple destinations. This communication can be either on-chip or across nodes. The communication engine makes a decision based on a set of predetermined parameters that can be re-adjusted by the application layer, such as latency of the transmission, message data size, physical distance from source to destination, the energy cost, and the current congestion on the alternative interconnects.

Blagodurov, Sergey↗