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DOE OSTI2021

Deuterium retention in MeV ion-irradiated beryllium

Beryllium, as the material of choice for the ITER first wall, will be subject to high energy neutrons during the operation of the fusion device. Such irradiation will create displacement damage in the crystal lattice, which is known to influence hydrogen isotope retention, e.g. in iron and tungsten. Here in our study, we irradiated beryllium samples with high-energy oxygen ions up to various dpa levels (0.01 dpa, 0.1 dpa, and 1 dpa) and subsequently exposed the samples to deuterium plasma at 370 K and 573 K. The amount of retained deuterium was measured by thermal desorption spectroscopy and nuclear reaction analysis and was found to decrease by about 18% in the samples damaged up to 0.1 dpa compared to the undamaged ones. Further damaging up to 1 dpa did not show any additional effects on deuterium retention. Transmission electron microscopy was used to check for the existence of bubbles after plasma exposure.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Electric field and temperature effects in irradiated MOSFETs

Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specific to a particular technology, it is of extreme importance to develop methods for testing and recovering the devices. The aim of this work is to check the influence of thermal annealing processes and electric field applied during irradiation of Metal Oxide Semiconductor Field Effect Transistors (MOSFET) in total ionizing dose experiments analyzing the changes in the electrical parameters in these devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS2001

Radiation Effects on DC-DC Converters

In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.

Zhang, De-Xin↗

DOE OSTI2019

Development of 3D diamond detectors for detector applications at ultra high luminosity facilities

During this project our group has succeeded in producing and measuring a number of 3D diamond devices. We have worked with manufacturers and shown that poly-crystalline CVD (pCVD) diamond can be grown reliably with a 5% uniformity in industry. We have produced 3D diamond devices and scaled up the production technology from roughly 100 cells on a device to 4000 cells on a device. We have increased the column yield from 92% to 99%. We have reduced the cell size from our safe initial choice 150μm x 150μm cells to the HL-LHC size of 50μm x 50μm cells. We have reduced the column diameter from 6-10 μm to 2.6 μm. In beam tests we have quantified the amount of charge each 3D device yields for minimizing ionizing particles and compared this to that produced by a planar diamond device. Very recently, we produced the first 3D diamond pixel devices read out with both ATLAS and CMS pixel electronics, tested them in particle beams at CERN and PSI. Finally we have successfully tested the first irradiated 3Ddiamond device after a fluence of 3.5 x 10 15 800 MeV p/cm 2 .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2015

Broadband enhancement of infrared absorption in microbolometers using Ag nanocrystals

High performance microbolometers are widely sought for thermal imaging applications. In order to increase the performance limits of microbolometers, the responsivity of the device to broadband infrared (IR) radiation needs to be improved. In this work, we report a simple, quick, and cost-effective approach to modestly enhance the broadband IR response of the device by evaporating Ag nanocrystals onto the light entrance surface of the device. When irradiated with IR light, strong fields are built up within the gaps between adjacent Ag nanocrystals. These fields resistively generate heat in the nanocrystals and underlying substrate, which is transduced into an electrical signal via a resistive sensing element in the device. Through this method, we are able to enhance the IR absorption over a broadband spectrum and improve the responsivity of the device by ∼11%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

A proposed high-intensity radiometer calibration method using concentrated solar radiation

Accurate calibration of irradiance measurement devices, or radiometers, is essential for ensuring the reliability of measurements in high heat applications such as concentrating solar power (CSP), aerospace, defense, and pulsed power systems. Despite the critical need, existing calibration standards and service providers are limited to irradiance levels below 100 kW/m 2 and specific radiation sources, which is insufficient for many applications. For instance, CSP technologies, particularly those under the Department of Energy’s Solar Energy Technologies Office (SETO) Gen 3 program, require accurate measurements of broadband irradiance at levels exceeding 2000 kW/m 2 . In even more extreme scenarios, such as re-entry vehicles, heat levels can surpass 10000 kW/m 2 . Current ISO standards, specifically ISO 14934–2 and ISO 14934–3, are constrained to lower irradiance levels and dependent on black body heat sources, limiting their applicability for high-intensity broadband irradiance measurements, particularly in concentrated solar applications. Here, to address this shortfall, the National Solar Thermal Test Facility (NSTTF) at Sandia National Laboratories (SNL) proposes a calibration method and facility capable of characterizing radiometers up to 2750 kW/m 2 using concentrated solar irradiance. Calibrating with concentrated sunlight is important for solar applications as it aligns the calibration process with the solar spectrum. This alignment is crucial for minimizing systematic errors and avoiding the need for additional corrections that may arise when radiometers designed for solar applications are calibrated using black-body or electrical sources. This paper presents the present day NSTTF characterization facility and procedure, detailing the proposed calibration method and uncertainty quantification. The presented method builds upon 1980′s NSTTF methodology and involves both theoretical and empirical methods to establish a robust relationship between gauge voltage output and irradiance intensity, quantifying both measurement and fitting errors. By addressing the limitations of existing standards and extending the characterization range, this work provides an advancement in the field of high-intensity irradiance measurement and instrumentation characterization.

Gardon gauge↗

DOE OSTI2025

Atoms-to-devices models for post-irradiation annealing kinetics in III-V semiconductors

Understanding atomic displacement damage and propagating this understanding into validated defect-aware radiation damage models is a critical step toward achieving predictive, atoms-to-systems assessment of radiation vulnerabilities of microelectronics. These models are essential for evaluating the performance and reliability of nuclear stockpile components or space-based electronics (satellites). The goal of this project was to bridge a fundamental science gap between defect spectroscopies and atomistic modeling of radiation-induced defects on the one hand, and simulations of device response on the other hand, to develop predictive defect-aware damage models for high-fidelity device simulations of radiation-damaged III-V semiconductors.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Distinctive features of fluorescence and waveguides in magnesium aluminate spinel crystals driven by structural discrepancy

Transparent polycrystalline ceramics are of significant importance for a wide range of scientific and industrial applications. Developing a deeper understanding of their thermodynamic behavior is essential for achieving their maximum output performance in technological applications. This study provides a systematic investigation into the thermal excitation-induced fluorescence kinetics and waveguide characteristics of Magnesium Aluminate Spinel (MgAl 2 O 4 ) single crystals, with a focus on the intricate relationship between structure and properties. High-temperature extreme environments through irradiation with swift heavy ions 645.0 MeV Xe and 352.8 MeV Fe ions were created; the atomic deposition energy threshold (E th ) associated with disorder morphologies was assessed between 0.91 and 0.99 eV atom –1 . The track prediction model was developed to support the theoretical prediction of track formation. Electronic energy loss (E ele ) disrupts the balance of the initial structure through the thermal spike effect, leading to the formation of absorption-related F and F + color centers. These defects enhance photoluminescence in the visible spectrum and result in an effective modulation of the intrinsic bandgap. Moreover, as ion beams penetrate into the material, the uneven damage distribution induces the formation of waveguide structures. In conclusion, these findings provide valuable insights into the fabrication of functional devices through irradiation technologies and the structural changes of MgAl 2 O 4 at high temperatures within extreme environments.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Progress towards developing neutron tolerant magnetostrictive and piezoelectric transducers

Current generation light water reactors (LWRs), sodium cooled fast reactors (SFRs), small modular reactors (SMRs), and next generation nuclear plants (NGNPs) produce harsh environments in and near the reactor core that can severely tax material performance and limit component operational life. To address this issue, several Department of Energy Office of Nuclear Energy (DOE-NE) research programs are evaluating the long duration irradiation performance of fuel and structural materials used in existing and new reactors. In order to maximize the amount of information obtained from Material Testing Reactor (MTR) irradiations, DOE is also funding development of enhanced instrumentation that will be able to obtain in-situ, real-time data on key material characteristics and properties, with unprecedented accuracy and resolution. Such data are required to validate new multi-scale, multi-physics modeling tools under development as part of a science-based, engineering driven approach to reactor development. It is not feasible to obtain high resolution/microscale data with the current state of instrumentation technology. However, ultrasound-based sensors offer the ability to obtain such data if it is demonstrated that these sensors and their associated transducers are resistant to high neutron flux, high gamma radiation, and high temperature. To address this need, the Advanced Test Reactor National Scientific User Facility (ATR-NSUF) is funding an irradiation, led by PSU, at the Massachusetts Institute of Technology Research Reactor to test the survivability of ultrasound transducers. As part of this effort, PSU and collaborators have designed, fabricated, and provided piezoelectric and magnetostrictive transducers that are optimized to perform in harsh, high flux, environments. Four piezoelectric transducers were fabricated with either aluminum nitride, zinc oxide, or bismuth titanate as the active element that were coupled to either Kovar or aluminum waveguides and two magnetostrictive transducers were fabricated with Remendur or Galfenol as the active elements. Pulse-echo ultrasonic measurements of these transducers are made in-situ. This paper will present an overview of the test design including selection criteria for candidate materials and optimization of test assembly parameters, data obtained from both out-of-pile and in-pile testing at elevated temperatures, and an assessment based on initial data of the expected performance of ultrasonic devices in irradiation conditions.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

DOE OSTI2025

Progress Towards Developing Neutron Tolerant Magnetostrictive and Piezoelectric Transducers

Reinhardt1, Brian↗

DOE OSTI2018

Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS 2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS 2 is presented, which is a less explored system compared to direct band gap monolayer MoS 2 that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS 2 membranes. The photoresponsivity R was measured to be ~1.4 × 10 4 A/W, which is > 10 4 times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 10 11 Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~10 4 . From time-resolved photocurrent measurements, a decay time τ d ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Quantum Sensing of Insulator‐to‐Metal Transitions in a Mott Insulator

Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, this paper reports on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. The resistive switching properties of both pristine and ion-irradiated VO 2 thin film devices are studied by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO 2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs nonthermally, well below the transition temperature. Here, the results provide direct evidence for nonthermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.

McLaughlin, Nathan J.↗

DOE OSTI2020

Sandia National Laboratories FY20 Progress Report

The Energetic Neutrons campaign led by Sandia National Laboratories (SNL) had a successful year testing electronic devices and printed circuit boards (PCBs) under 14 MeV neutron irradiation at OMEGA. During FY20 the Energetic Neutrons campaign increased the number and complexity of experiments, continued collaborations with external organizations, and generated knowledge that supports SNL’s National Security mission. In FY20 the Energetic Neutrons campaign was executed by an early career team led by a new PI. The SNL team members were trained to take over new responsibilities during the shot day to increase the number and complexity of experiments in the campaigns. Also, in FY20 for the first time the Energetic Neutrons campaign had a graduate student contributing with pre and post-irradiation characterizations at SNL of the semiconductor devices irradiated at OMEGA. In FY20 SNL collaborated with the Air Force Nuclear Weapons Center (AFNWC) and supported experiments related to radiation effects in semiconductor devices. SNL also gave the opportunity to ride along to Los Alamos National Laboratory and multiple scientists from MIT and LLE. SNL continued using the last two generations of the Neutron Effects Diagnostics (NEDs) to field active and passive experiments but also redesigned the latest generation of the NEDs to accommodate larger components and improve the vacuum sealing as shown in figure 1a. The redesigned NEDs allowed SNL to perform active tests of a high voltage (HV) PCB for the first time at OMEGA; where signals before, during and after the irradiation were recorded. The HV PCB installed in one of the SNL NEDs is shown in figure 1b where a 3D-printed nosecone was used to check for mechanical and electrical interference. Passive irradiations of multiple components were followed up with leakage current, gain measurements and radiation-induced defect characterization.

42 ENGINEERING↗

DOE OSTI2015

SU-E-T-55: A Novel Applicator for High Dose Rate Brachytherapy Treatments of Ocular Conjunctiva

Purpose: To evaluate the clinical feasibility of IntraBeam intra operative kV irradiation beam device for ocular conjunctiva treatments. The Intra-Beam system offers a 4.4 mm diameter needle applicator, that is not suitable for treatment of a large surface with limits access. We propose an adaptor that will answer to this clinical need and provide initial dosimetry. Methods: The dose distribution of the needle applicator is non uniform and hence not suitable for treatment of relatively large surfaces. We designed an adapter to the needle applicator that will filter the X-rays and produce a conformal dose distribution over the treatment area while shielding surfaces to be spared. Dose distributions were simulated using FLUKA is a fully integrated particle physics Monte Carlo simulation package. Results: We designed a wedge applicator made of Polythermide window and stainless steel for collimating. We compare the dose distribution to that of the known needle and surface applicators. Conclusion: Initial dosimetry shows feasibility of this approach. While further refinements to the design may be warranted, the results support construction of a prototype and confirmation of the Monte Carlo dosimetry with measured data.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2015

Simple model of the indirect compression of targets under conditions close to the national ignition facility at an energy of 1.5 MJ

The possibility of the analysis and interpretation of the reported experiments with the megajoule National Ignition Facility (NIF) laser on the compression of capsules in indirect-irradiation targets by means of the one-dimensional RADIAN program in the spherical geometry has been studied. The problem of the energy balance in a target and the determination of the laser energy that should be used in the spherical model of the target has been considered. The results of action of pulses differing in energy and time profile (“low-foot” and “high-foot” regimes) have been analyzed. The parameters of the compression of targets with a high-density carbon ablator have been obtained. The results of the simulations are in satisfactory agreement with the measurements and correspond to the range of the observed parameters. The set of compared results can be expanded, in particular, for a more detailed determination of the parameters of a target near the maximum compression of the capsule. The physical foundation of the possibility of using the one-dimensional description is the necessity of the closeness of the last stage of the compression of the capsule to a one-dimensional process. The one-dimensional simulation of the compression of the capsule can be useful in establishing the boundary behind which two-dimensional and three-dimensional simulation should be used.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2025

Small scale electron linear accelerators for industrial applications

Linear accelerators (linacs), producing electron or X-ray radiation in the MeV range, are critical tools for industrial irradiation, medical device sterilization, food pasteurization, non-destructive testing, security, medical, and many other applications. Many of these applications require compact and flexible radiation sources. In this paper, we present new technologies for small-scale electron linear accelerators and examples of their practical implementations. Furthermore, these developments include low energy accelerators with self-shielding options and form factors, ranging from cabinet-size to hand-portable generators; medium-energy accelerators for novel radiotherapy and security applications; and high-energy 10 MeV linacs capable of reaching 20–35 kW beam power for emerging industrial and phytosanitary applications

43 PARTICLE ACCELERATORS↗

DOE OSTI2021

Bias-dependent displacement damage effects in a silicon avalanche photodiode

Radiation effects studies on a commercial beveled-edge avalanche photodiode (APD) showed that applying reverse bias to the device during irradiation enhanced the severity of apparent damage. Proton microbeam irradiations were made using a proton beam energy of 2 MeV and fluence ranging from 2.0 × 10 10 to 5.1 × 10 12 cm -2 . Charge collection measurements using the ion beam induced charge (IBIC) technique showed that relative losses increased by up to an order of magnitude when the reverse bias applied during irradiation increased from 50 to 1500 V. The presence of reverse bias also led to equivalent losses in charge collection that would only be seen in irradiations with an order of magnitude higher fluence in unbiased APDs. The results demonstrate that bias-enhanced irradiation damage is insufficiently understood and must be accounted for in characterizations of radiation effects.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2018

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.

42 ENGINEERING↗